We report a facile electroless chemical deposition(ECD)method to deposit uniform Pd nanoparticles((2.5±0.6)nm)on CeO2 nanorods(PdNPs/CeO2-ECD)through the interface redox reaction between the reduced CeO2 and Na2P...We report a facile electroless chemical deposition(ECD)method to deposit uniform Pd nanoparticles((2.5±0.6)nm)on CeO2 nanorods(PdNPs/CeO2-ECD)through the interface redox reaction between the reduced CeO2 and Na2PdCl4.Pd NPs/CeO2-ECD exhibits a stronger electronic metal-support interaction(EMSI)evidenced by higher reducibility and stronger anti-sintering capability at high temperatures,compared to that prepared by the conventional impregnation method.Such an EMSI effect of PdNPs/CeO2-ECD significantly improves its catalytic activity in CO oxidation.Besides,the chlorine residue-free catalysts through ECD process avoid the deleterious effect of chlorine on CO oxidation.This ECD process can further be extended to deposit various uniform nanoscaled noble metals(Au,Ag,Pt,Ru,Rh,etc.)on CeO2,which may deliver their potentials in advanced catalysis.展开更多
Nano particles lanthanum modified lead titanate (PLT) thin films are grown on Pt/Ti/SiO 2/Si substrate by liquid source misted chemical deposition (LSMCD). PLT films are deposited for 4-8 times, and then annealed at v...Nano particles lanthanum modified lead titanate (PLT) thin films are grown on Pt/Ti/SiO 2/Si substrate by liquid source misted chemical deposition (LSMCD). PLT films are deposited for 4-8 times, and then annealed at various temperature. XRD and SEM show that the prepared films have good crystallization behavior and perovskite structure. The crystallite is about 60 nm. The deposition speed is 3 nm/min. This deposition method can exactly control stoichiometry ratios, doping concentration ratio and thickness of PLT thin films. The best annealing process is to bake at 300 ℃ for 10 min and anneal at 600 ℃ for 1 h.展开更多
In this work, the results on the investigation of the precularity near the solar spectrum region, of Zn1.xCdxSe nanofilms, nanoscale heterojunction prepared on silikon and alumminium substrates by precipitation from a...In this work, the results on the investigation of the precularity near the solar spectrum region, of Zn1.xCdxSe nanofilms, nanoscale heterojunction prepared on silikon and alumminium substrates by precipitation from aqueous solutions are presented. The temperature dependence of dark and light conductivity, spectrum and optical quenching of primary and impurity photoconductivity are investigated. The obtained results show that when controlling ionic composition and HT （heat-treatment） conditions, one can purposely control the properties of Zn1-xCdxSe （0 ≤ x ≤ 0.6） films, achieve the appropriate degree of compensation of different recombination levels and traps attributed to intrinsic defects or impurities, which result in high level of photoelectrical parameters near the IR region. Just after deposition the photoconductivity spectrum maximum of Zn1-xCdxSe （0 〈 x 〈 0.6） films is observed at λ1 = 0.545 ＋ 0.495/am versus the film composition.展开更多
To improve the mechanical properties of 2024 aluminum alloy,a kind of diamond-like carbon(DLC)film was deposited on the surface of 2024 aluminum alloy by plasma-enhanced chemical vapor deposition technique.The effects...To improve the mechanical properties of 2024 aluminum alloy,a kind of diamond-like carbon(DLC)film was deposited on the surface of 2024 aluminum alloy by plasma-enhanced chemical vapor deposition technique.The effects of acetylene gas on the microstructure,hardness,wear resistance,and adhesion of DLC film were investigated by field emission scanning electron microscope,nano-indentation tester,and friction-wear tester.The results indicate that the thickness of the DLC film increases gradually with increasing the proportion of acetylene.There is an obvious transition layer between the DLC film and matrix.When the ratio of argon to acetylene is 1:3,the hardness of DLC film is enhanced significantly because of the content changes of sp^(3) and sp^(2) bonds within the film.At the same time,the friction coefficient of DLC film is reduced.展开更多
The authors report the development of aλ~4.1μm quantum cascade laser grown by metal-organic chemical vapor deposition using strain-balanced In Ga As/In Al As materials.A device with a 7.5 mm cavity length and 6.5μm...The authors report the development of aλ~4.1μm quantum cascade laser grown by metal-organic chemical vapor deposition using strain-balanced In Ga As/In Al As materials.A device with a 7.5 mm cavity length and 6.5μm ridge width,bonded to an aluminum nitride heatsink,achieves maximum output powers of 3.4 W at 288 K in pulsed mode and 1.6 W at288 K in continuous-wave(CW)operation,with corresponding maximum wall-plug efficiencies of 14.8%and 9.3%.A kink is observed in the power–current curve under CW operation,which is absent in pulsed operation.Near-field results show that in CW operation,the horizontal beam quality factor M2fluctuates with current,indicating mode instability and highorder lateral mode excitation,while in pulsed mode,the horizontal M2remains stable around 1.3 as the current increases from 1.4 A to 1.9 A.展开更多
The heteroepitaxy of diamond films has received widespread attention;however,its application remains limited owing to the mismatch in properties and structure between diamond and heterogeneous substrates.In this study...The heteroepitaxy of diamond films has received widespread attention;however,its application remains limited owing to the mismatch in properties and structure between diamond and heterogeneous substrates.In this study,diamond films were successfully synthesized on high-entropy alloys(HEAs)substrates using microwave plasma chemical vapor deposition.The resulting diamond films were continuous,uniform,and adhered to the HEAs substrates.The mixed carbides were identified using X-ray diffraction,and the quality of the diamond films was examined using Raman spectroscopy.Moreover,the corrosion test revealed that the diamond/TiZrHfMo samples had excellent electrochemical stability and corrosion resistance with a corrosion potential value of-0.169 V in a 3.5wt%NaCl solution.A multiple regression model was established to evaluate the effects of the structure and growth parameters,which confirmed that the mixing entropy significantly affected the grain size and corrosion properties.展开更多
In order to address challenges posed by the reduction in transistor size,researchers are concentrating on two-dimensional(2D)materials with high dielectric constants and large band gaps.Monoclinic ZrO_(2)(m-ZrO_(2))ha...In order to address challenges posed by the reduction in transistor size,researchers are concentrating on two-dimensional(2D)materials with high dielectric constants and large band gaps.Monoclinic ZrO_(2)(m-ZrO_(2))has emerged as a promising gate dielectric material due to its suitable dielectric constant,wide band gap,ideal valence-band offset,and good thermodynamic stability.However,current deposition methods face compatibility issues with 2D semiconductors,highlighting the need for high-quality dielectrics and interfaces.Here,high-quality 2D m-ZrO_(2)single crystals are successfully prepared using a onestep chemical vapor deposition(CVD)method,aided by 5A molecular sieves for oxygen supply.The prepared ZrO_(2)is utilized as a gate dielectric in the construction of MoS2 field-effect transistors(FETs)to investigate its electrical property.The FETs exhibit a high carrier mobility of up to 5.50 cm^(2)·V^(−1)·s^(−1),and a current switching ratio(Ion/off)of approximately 10^(4),which aligns with the current standards of logic circuits,indicating that ZrO_(2)has application value as a gate dielectric.The successful onestep preparation of single-crystal ZrO_(2)paves the way for the utilization of high-κgate dielectrics and creates favorable conditions for the development of high-performance semiconductor devices,offering new possibilities for transistor miniaturization.展开更多
Graphene-metal based materials have been utilized in lithium-sulfur(Li–S)batteries owing to their integrated functionalities thus far.However,their synthesis has predominantly relied on wet-chemistry routes,which lim...Graphene-metal based materials have been utilized in lithium-sulfur(Li–S)batteries owing to their integrated functionalities thus far.However,their synthesis has predominantly relied on wet-chemistry routes,which limited their practical activity in Li–S reaction systems.In this study,we introduce a chemical vapor deposition(CVD)-triggered dry-chemistry approach for the preparation of graphene-cobalt(Co)based catalysts.The versatile CVD technique provides a dry and controllable reaction environment,effectively pledging the compact and clean catalytic interfaces between graphene and Co-based components.Additionally,programmed reactions introduce defects such as vacancies and nitrogen heteroatoms into the catalysts.Notably,the graphene layer number and Co valence state can be delicately manipulated by altering the CVD reaction temperature.Specifically,few-layer graphene wrapped Co/Co_(3)O_(4)(FGr-Co/Co_(3)O_(4))prepared at 450 ℃ shows higher catalytic activity than the multi-layer graphene wrapped Co/CoO(MGr-Co/CoO)synthesized at 550 ℃,attributed to its comprehensive control of clean interface,valence distribution range and defects.Leveraging these advantages,the battery with FGr-Co/Co_(3)O_(4)shows favorable working stability with a degradation rate of only 0.08%over 500 cycles at 1.0 C.Furthermore,under an elevated sulfur loading of 6.1 mg cm^(–2),the battery harvests a remarkable areal capacity of 5.9 mA h cm^(–2)along with stable cyclic operation.展开更多
The insulating nature and dissolution of vanadium-based oxides in aqueous electrolytes result in low capacity and lifespan during charge/discharge process, which is unable to meet the demands for the development and a...The insulating nature and dissolution of vanadium-based oxides in aqueous electrolytes result in low capacity and lifespan during charge/discharge process, which is unable to meet the demands for the development and application of high-energy-density aqueous zinc-ion batteries(AZIBs). Herein, a novel V_(2)O_(5-x)@C composite cathode consisting of conductive carbon coatings with abundant oxygen vacancies is specifically designed through plasma-enhanced chemical vapor deposition(PECVD) method. As expected,the ideal microstructure of V_(2)O_(5-x)@C cathode enables large specific surface areas, fast electron/ion diffusion kinetics, and superior interfacial stability, which can realize outstanding cycling stability and electrochemical performance. Consequently, the V_(2)O_(5-x)@C composite cathode delivers a high reversible rate capacity of 130.6 mAh/g at 10 A/g and remains 277.6 mAh/g when returned to 1 A/g. In addition, the Zn//V_(2)O_(5-x)@C full cell can stably cycle for 1000 cycles with a high initial specific capacity of 149.2 m Ah/g,possessing 83.8% capacity retention at 5 A/g. The process of constructing a conductive layer on the surface of cathode materials while increasing oxygen vacancies in the structure through PECVD provides new insight into the design of high-performance cathode materials for AZIBs.展开更多
Ruthenium(Ru)-based chalcogenide(S,Se)is a promising material in various fields,such as optics,photoelectrodes,and electrocatalysis,owing to its suitable bandgap for generating charge carriers under light illumination...Ruthenium(Ru)-based chalcogenide(S,Se)is a promising material in various fields,such as optics,photoelectrodes,and electrocatalysis,owing to its suitable bandgap for generating charge carriers under light illumination ranging from visible to near-infrared(NIR)and its high absorption coefficient.In this study,we report the synthesis of Ru Se_(2)thin films by chemical vapor deposition(CVD)with a bandgap matching the NIR region at 0.52 e V.Further,we demonstrated Ru S_(2x)Se_(2-2x)alloy films using the post-sulfurization process after CVD Ru Se_(2)with a tunable bandgap from 0.52 to 1.39 e V depending on sulfur composition.Remarkably,Ru S_(2x)Se_(2-2x)alloy film metal–semiconductor–metal(MSM)photodetector sulfurized at 500°C,with a 0.75 e V bandgap,exhibits enhanced broad absorption across NIR spectral ranges,suppressed dark current and high photoresponsivity in NIR wavelengths range even at zero-bias.We believe the bandgaptunable Ru S_(2x)Se_(2-2x)thin film through an efficient deposition method could be suitable for various optoelectronic applications.展开更多
Viscose activated carbon fibers （ACFs） were characterized using specific surface area, scanning electron modified with chemical vapor deposition （CVD）. The samples were microscopy （SEM）, pore size distribution a...Viscose activated carbon fibers （ACFs） were characterized using specific surface area, scanning electron modified with chemical vapor deposition （CVD）. The samples were microscopy （SEM）, pore size distribution and Fourier transform infrared spectroscopy （FTIR）. Batch adsorption experiments were carried out to investigate the adsorption behavior of modified ACFs for methyl orange（MO） from its aqueous solutions. The results show that the adsorption isotherms of MO onto modified ACFs well follows the Langmuir isotherm equation. The adsorption kinetics of MO can be well described by the pseudo second-order kinetic model. The adsorption process involves the intra-particle diffusion, but is not the only rate-controlling step. Thermodynamic parameters including AG, AH and AS were calculated, suggesting that the adsorption of MO onto modified ACFs is a spontaneous, exothermic and physisorption process. FTIR result indicates that the major adsorption mechanism of modified ACFs for MO is hydrogen bond.展开更多
Hafnium oxide thin films （HOTFs） were successfully deposited onto amorphous glasses using chemical bath deposition, successive ionic layer absorption and reaction （SILAR）, and sol-gel methods. The same reactive pr...Hafnium oxide thin films （HOTFs） were successfully deposited onto amorphous glasses using chemical bath deposition, successive ionic layer absorption and reaction （SILAR）, and sol-gel methods. The same reactive precursors were used for all of the methods, and all of the films were annealed at 300℃ in an oven （ambient conditions）. After this step, the optical and structural properties of the films produced by using the three different methods were compared. The structures of the films were analyzed by X-ray diffTaction （XRD）. The optical properties are investigated using the ultraviolet-visible （UV-VIS） spectroscopic technique. The film thickness was measured via atomic force microscopy （AFM） in the tapping mode. The surface properties and elemental ratios of the films were investigated and measured by scanning electron microscopy and energy-dispersive X-ray spectroscopy （EDX）. The lowest transmittance and the highest reflectance values were observed for the films produced using the SILAR method. In addition, the most intense characteristic XRD peak was observed in the diffraction pattern of the film produced using the SILAR method, and the greatest thickness and average grain size were calculated for the film produced using the SILAR method. The films produced using SILAR method contained fewer cracks than those produced using the other methods. In conclusion, the SILAR method was observed to be the best method for the production of HOTFs.展开更多
Polyaniline （PA） film was chemically deposited onto the surface of activated carbon （AC） uniformly. Chemical deposition was carried out in 0.1 mol/L aniline plus 0.5 mol/L H2SO4 solution adopting V2O5·nH2O co...Polyaniline （PA） film was chemically deposited onto the surface of activated carbon （AC） uniformly. Chemical deposition was carried out in 0.1 mol/L aniline plus 0.5 mol/L H2SO4 solution adopting V2O5·nH2O coated on the surface of activated carbon as oxidant. The surface morphologies and structures of the composite materials were characterized by scanning electron microscopy and FT-IR spectra. The electrochemical properties of the composite material electrodes were studied by cyclic voltammetry and constant current charge/discharge tests in 1 molFL H2SO4 solutions. The specific capacitance of composite materials was exhibited as high as 237.5 F/g at a current density of 1.0 A/g compared with a value of 120 F/g for pure carbon electrode. Good power characteristic and good stability of composite electrodes were also demonstrated.展开更多
We report on the growth and fabrication of nonpolar a-plane light emitting diodes with an in-situ SiNx interlayer grown between the undoped a-plane GaN buffer and Si-doped GaN layer. X-ray diffraction shows that the c...We report on the growth and fabrication of nonpolar a-plane light emitting diodes with an in-situ SiNx interlayer grown between the undoped a-plane GaN buffer and Si-doped GaN layer. X-ray diffraction shows that the crystalline quality of the GaN buffer layer is greatly improved with the introduction of the SiNx interlayer. The electrical properties are also improved. For example, electron mobility and sheet resistance are reduced from high resistance to 31.6 cm2/（V· s） and 460 Ω/respectively. Owing to the significant effect of the SiNx interlayer, a-plane LEDs are realized. Electrolurninescence of a nonpolar a-plane light-emitting diode with a wavelength of 488nm is demonstrated. The emission peak remains constant when the injection current increases to over 20 mA.展开更多
The effects of Si doping on morphology, components and structure characteristics of CVD diamond films were studied. Si-doped CVD diamond films were deposited on Si substrate by adding tetraethoxysilane （TEOS） into a...The effects of Si doping on morphology, components and structure characteristics of CVD diamond films were studied. Si-doped CVD diamond films were deposited on Si substrate by adding tetraethoxysilane （TEOS） into acetone as source of reactant gas. The morphology and microstructure of diamond films were characterized by scanning electron microcopy （SEM）. The crystalline quality of diamond films was studied by Raman spectroscopy and X-ray diffractometry （XRD）. The surface roughness of the films was evaluated with surface profilometer. The results suggest that Si doping tends to reduce the crystallite size, enhance grain refinement and inhibit the appearance of （11 I） facets. Raman spectra indicate that Si doping can enhance the formation of sp2 phase in diamond films. Moreover, Raman signal of SiC was detected, which suggests the existence of Si in the diamond films. Smooth fine-grained diamond （SFGD） film was synthesized at Si to C ratio of 1%.展开更多
ZnO thin films were grown on GaAs （001） substrates by metal-organic chemical vapor deposition （MOCVD） at low temperatures ranging from 100 to 400℃. DEZn and 1-12 O were used as the zinc precursor and oxygen precu...ZnO thin films were grown on GaAs （001） substrates by metal-organic chemical vapor deposition （MOCVD） at low temperatures ranging from 100 to 400℃. DEZn and 1-12 O were used as the zinc precursor and oxygen precursor, respectively. The effects of the growth temperatures on the growth characteristics and optical properties of ZnO films were investigated. The X-ray diffraction measurement （XRD） results indicated that all the thin films were grown with highly c- axis orientation. The surface morphologies and crystal properties of the films were critically dependent on the growth temperatures. Although there was no evidence of epitaxial growth, the scanning electron microscopy （SEM） image of ZnO film grown at 400℃ revealed the presence of ZnO microcrystallines with closed packed hexagon structure. The photoluminescence spectrum at room temperature showed only bright band-edge （3. 33eV） emissions with little or no deep-level e- mission related to defects.展开更多
Shape-selective catalysts for the disproportionation of toluene were prepared by the modification of the cylinder-shaped ZSM-5 zeolite extrudates with chemical liquid deposition with TEOS （tetraethyl orthosilicate）....Shape-selective catalysts for the disproportionation of toluene were prepared by the modification of the cylinder-shaped ZSM-5 zeolite extrudates with chemical liquid deposition with TEOS （tetraethyl orthosilicate）.Various parameters for preparing catalysts were changed to investigate the suitable conditions.The resulting cata-lysts were tested in a pressured fixed bed reactor and characterized by SEM （scanning electron microscopy）.The conversion of toluene and para-xylene selectivity were influenced remarkably by the n（SiO2）/n（Al2O3） ratio of ZSM-5 zeolite,the type and amount of deposition agent,acid and solvent used,and the time and cycle of deposition treatment.TEOS was proved to be a more efficient agent than the conventional polysiloxanes when the deposition amount was low.The catalyst prepared at the suitable conditions exhibited a high para-xylene selectivity of 91.1% with considerable high conversion of 25.6%.SEM analyses confirmed the formation of a layer of amorphous silica on the external surface of ZSM-5 zeolie crystals,which was responsible for the highly enhanced shape-selectivity.展开更多
Two-dimensional transition metal dichalcogenides heterostructures have stimulated wide in- terest not only for the fundamental research, but also for the application of next generation electronic and optoelectronic de...Two-dimensional transition metal dichalcogenides heterostructures have stimulated wide in- terest not only for the fundamental research, but also for the application of next generation electronic and optoelectronic devices. Herein, we report a successful two-step chemical vapor deposition strategy to construct vertically stacked van der Waals epitaxial In2Se3/MoSe2 heterostructures. Transmission electron microscopy characterization reveals clearly that the In2Se3 has well-aligned lattice orientation with the substrate of monolayer MoSe2. Due to the interaction between the In2Se3 and MoSe2 layers, the heterostructure shows the quench- ing and red-shift of photoluminescence. Moreover, the current rectification behavior and photovoltaic effect can be observed from the heterostructure, which is attributed to the unique band structure alignment of the heterostructure, and is further confirmed by Kevin probe force microscopy measurement. The synthesis approach via van der Waals epitaxy in this work can expand the way to fabricate a variety of two-dimensional heterostructures for potential applications in electronic and optoelectronic devices.展开更多
Various methods for production of polysilicon have been proposed for lowering the production cost andenergy consumption, and enhancing productivity, which are critical for industrial applications. The fluidized bed ch...Various methods for production of polysilicon have been proposed for lowering the production cost andenergy consumption, and enhancing productivity, which are critical for industrial applications. The fluidized bed chemical vapor deposition （FBCVD） method is a most promising alternative to conventional ones, but the homogeneous reaction of silane in FBCVD results in unwanted formation of fines, which will affect the product qualityand output. There are some other problems, such as heating degeneration due to undesired polysilicon deposition on the walls of the reactor and the heater. This article mainly reviews the technological development on FBCVD of polycrystalline silicon and the research status for solving the above problems. It also identifies a number of challenges to tackle and principles should be followed in the design ofa FBCVD reactor.展开更多
基金financially supported by the National Natural Science Foundation of China(Nos.21872109 and 61774109)the State Key Laboratory for Mechanical Behavior of Materials(No.20182005)+3 种基金the Hundred Talents Program of Shanxi Provincethe Youth"Sanjin"Scholar Programthe Key R&D Project of Shanxi Province(No.201603D421032)supported by the Cyrus Tang Foundation through Tang Scholar Program。
文摘We report a facile electroless chemical deposition(ECD)method to deposit uniform Pd nanoparticles((2.5±0.6)nm)on CeO2 nanorods(PdNPs/CeO2-ECD)through the interface redox reaction between the reduced CeO2 and Na2PdCl4.Pd NPs/CeO2-ECD exhibits a stronger electronic metal-support interaction(EMSI)evidenced by higher reducibility and stronger anti-sintering capability at high temperatures,compared to that prepared by the conventional impregnation method.Such an EMSI effect of PdNPs/CeO2-ECD significantly improves its catalytic activity in CO oxidation.Besides,the chlorine residue-free catalysts through ECD process avoid the deleterious effect of chlorine on CO oxidation.This ECD process can further be extended to deposit various uniform nanoscaled noble metals(Au,Ag,Pt,Ru,Rh,etc.)on CeO2,which may deliver their potentials in advanced catalysis.
文摘Nano particles lanthanum modified lead titanate (PLT) thin films are grown on Pt/Ti/SiO 2/Si substrate by liquid source misted chemical deposition (LSMCD). PLT films are deposited for 4-8 times, and then annealed at various temperature. XRD and SEM show that the prepared films have good crystallization behavior and perovskite structure. The crystallite is about 60 nm. The deposition speed is 3 nm/min. This deposition method can exactly control stoichiometry ratios, doping concentration ratio and thickness of PLT thin films. The best annealing process is to bake at 300 ℃ for 10 min and anneal at 600 ℃ for 1 h.
文摘In this work, the results on the investigation of the precularity near the solar spectrum region, of Zn1.xCdxSe nanofilms, nanoscale heterojunction prepared on silikon and alumminium substrates by precipitation from aqueous solutions are presented. The temperature dependence of dark and light conductivity, spectrum and optical quenching of primary and impurity photoconductivity are investigated. The obtained results show that when controlling ionic composition and HT （heat-treatment） conditions, one can purposely control the properties of Zn1-xCdxSe （0 ≤ x ≤ 0.6） films, achieve the appropriate degree of compensation of different recombination levels and traps attributed to intrinsic defects or impurities, which result in high level of photoelectrical parameters near the IR region. Just after deposition the photoconductivity spectrum maximum of Zn1-xCdxSe （0 〈 x 〈 0.6） films is observed at λ1 = 0.545 ＋ 0.495/am versus the film composition.
基金National Natural Science Foundation of China(52274296,52071091,52001081)College Student Innovation and Entrepreneurship Training Program Project from Guangdong Province in 2023(S20230125)。
文摘To improve the mechanical properties of 2024 aluminum alloy,a kind of diamond-like carbon(DLC)film was deposited on the surface of 2024 aluminum alloy by plasma-enhanced chemical vapor deposition technique.The effects of acetylene gas on the microstructure,hardness,wear resistance,and adhesion of DLC film were investigated by field emission scanning electron microscope,nano-indentation tester,and friction-wear tester.The results indicate that the thickness of the DLC film increases gradually with increasing the proportion of acetylene.There is an obvious transition layer between the DLC film and matrix.When the ratio of argon to acetylene is 1:3,the hardness of DLC film is enhanced significantly because of the content changes of sp^(3) and sp^(2) bonds within the film.At the same time,the friction coefficient of DLC film is reduced.
文摘The authors report the development of aλ~4.1μm quantum cascade laser grown by metal-organic chemical vapor deposition using strain-balanced In Ga As/In Al As materials.A device with a 7.5 mm cavity length and 6.5μm ridge width,bonded to an aluminum nitride heatsink,achieves maximum output powers of 3.4 W at 288 K in pulsed mode and 1.6 W at288 K in continuous-wave(CW)operation,with corresponding maximum wall-plug efficiencies of 14.8%and 9.3%.A kink is observed in the power–current curve under CW operation,which is absent in pulsed operation.Near-field results show that in CW operation,the horizontal beam quality factor M2fluctuates with current,indicating mode instability and highorder lateral mode excitation,while in pulsed mode,the horizontal M2remains stable around 1.3 as the current increases from 1.4 A to 1.9 A.
基金financial support from the Shanxi Scholarship Council of China(No.2024-057)the Water Conservancy Science and Technology Research and Promotion Project of Shanxi Province,China(No.2025GM13)the National Natural Science Foundation of China(No.52571048).
文摘The heteroepitaxy of diamond films has received widespread attention;however,its application remains limited owing to the mismatch in properties and structure between diamond and heterogeneous substrates.In this study,diamond films were successfully synthesized on high-entropy alloys(HEAs)substrates using microwave plasma chemical vapor deposition.The resulting diamond films were continuous,uniform,and adhered to the HEAs substrates.The mixed carbides were identified using X-ray diffraction,and the quality of the diamond films was examined using Raman spectroscopy.Moreover,the corrosion test revealed that the diamond/TiZrHfMo samples had excellent electrochemical stability and corrosion resistance with a corrosion potential value of-0.169 V in a 3.5wt%NaCl solution.A multiple regression model was established to evaluate the effects of the structure and growth parameters,which confirmed that the mixing entropy significantly affected the grain size and corrosion properties.
基金support from the National Natural Science Foundation of China(No.21975067)Shenzhen Science and Technology Program(No.JCYJ20220530160407016).
文摘In order to address challenges posed by the reduction in transistor size,researchers are concentrating on two-dimensional(2D)materials with high dielectric constants and large band gaps.Monoclinic ZrO_(2)(m-ZrO_(2))has emerged as a promising gate dielectric material due to its suitable dielectric constant,wide band gap,ideal valence-band offset,and good thermodynamic stability.However,current deposition methods face compatibility issues with 2D semiconductors,highlighting the need for high-quality dielectrics and interfaces.Here,high-quality 2D m-ZrO_(2)single crystals are successfully prepared using a onestep chemical vapor deposition(CVD)method,aided by 5A molecular sieves for oxygen supply.The prepared ZrO_(2)is utilized as a gate dielectric in the construction of MoS2 field-effect transistors(FETs)to investigate its electrical property.The FETs exhibit a high carrier mobility of up to 5.50 cm^(2)·V^(−1)·s^(−1),and a current switching ratio(Ion/off)of approximately 10^(4),which aligns with the current standards of logic circuits,indicating that ZrO_(2)has application value as a gate dielectric.The successful onestep preparation of single-crystal ZrO_(2)paves the way for the utilization of high-κgate dielectrics and creates favorable conditions for the development of high-performance semiconductor devices,offering new possibilities for transistor miniaturization.
基金support of the National Natural Science Foundation of China(Grant No.52172239,52202038,and 52402247)the Innovative Funds Plan of Henan University of Technology(Grant No.2020ZKCJ07)the Natural Science Foundation of Shandong Province(Grant No.ZR2022QE081)。
文摘Graphene-metal based materials have been utilized in lithium-sulfur(Li–S)batteries owing to their integrated functionalities thus far.However,their synthesis has predominantly relied on wet-chemistry routes,which limited their practical activity in Li–S reaction systems.In this study,we introduce a chemical vapor deposition(CVD)-triggered dry-chemistry approach for the preparation of graphene-cobalt(Co)based catalysts.The versatile CVD technique provides a dry and controllable reaction environment,effectively pledging the compact and clean catalytic interfaces between graphene and Co-based components.Additionally,programmed reactions introduce defects such as vacancies and nitrogen heteroatoms into the catalysts.Notably,the graphene layer number and Co valence state can be delicately manipulated by altering the CVD reaction temperature.Specifically,few-layer graphene wrapped Co/Co_(3)O_(4)(FGr-Co/Co_(3)O_(4))prepared at 450 ℃ shows higher catalytic activity than the multi-layer graphene wrapped Co/CoO(MGr-Co/CoO)synthesized at 550 ℃,attributed to its comprehensive control of clean interface,valence distribution range and defects.Leveraging these advantages,the battery with FGr-Co/Co_(3)O_(4)shows favorable working stability with a degradation rate of only 0.08%over 500 cycles at 1.0 C.Furthermore,under an elevated sulfur loading of 6.1 mg cm^(–2),the battery harvests a remarkable areal capacity of 5.9 mA h cm^(–2)along with stable cyclic operation.
基金financially supported by the National Natural Science Foundation of China (No. 52377222)Natural Science Foundation of Hunan Province (No. 2023JJ20064)。
文摘The insulating nature and dissolution of vanadium-based oxides in aqueous electrolytes result in low capacity and lifespan during charge/discharge process, which is unable to meet the demands for the development and application of high-energy-density aqueous zinc-ion batteries(AZIBs). Herein, a novel V_(2)O_(5-x)@C composite cathode consisting of conductive carbon coatings with abundant oxygen vacancies is specifically designed through plasma-enhanced chemical vapor deposition(PECVD) method. As expected,the ideal microstructure of V_(2)O_(5-x)@C cathode enables large specific surface areas, fast electron/ion diffusion kinetics, and superior interfacial stability, which can realize outstanding cycling stability and electrochemical performance. Consequently, the V_(2)O_(5-x)@C composite cathode delivers a high reversible rate capacity of 130.6 mAh/g at 10 A/g and remains 277.6 mAh/g when returned to 1 A/g. In addition, the Zn//V_(2)O_(5-x)@C full cell can stably cycle for 1000 cycles with a high initial specific capacity of 149.2 m Ah/g,possessing 83.8% capacity retention at 5 A/g. The process of constructing a conductive layer on the surface of cathode materials while increasing oxygen vacancies in the structure through PECVD provides new insight into the design of high-performance cathode materials for AZIBs.
基金supported by TANAKA KIKINZOKU KOGYO K.Kfinancially supported by the National Research Foundation of Korea(NRF)grant funded by the Korea government(MSIT)(No.NRF-2022R1A2C2006764)the Materials and Components Technology Development Program of MOTIE/KEIT(No.[20012460])。
文摘Ruthenium(Ru)-based chalcogenide(S,Se)is a promising material in various fields,such as optics,photoelectrodes,and electrocatalysis,owing to its suitable bandgap for generating charge carriers under light illumination ranging from visible to near-infrared(NIR)and its high absorption coefficient.In this study,we report the synthesis of Ru Se_(2)thin films by chemical vapor deposition(CVD)with a bandgap matching the NIR region at 0.52 e V.Further,we demonstrated Ru S_(2x)Se_(2-2x)alloy films using the post-sulfurization process after CVD Ru Se_(2)with a tunable bandgap from 0.52 to 1.39 e V depending on sulfur composition.Remarkably,Ru S_(2x)Se_(2-2x)alloy film metal–semiconductor–metal(MSM)photodetector sulfurized at 500°C,with a 0.75 e V bandgap,exhibits enhanced broad absorption across NIR spectral ranges,suppressed dark current and high photoresponsivity in NIR wavelengths range even at zero-bias.We believe the bandgaptunable Ru S_(2x)Se_(2-2x)thin film through an efficient deposition method could be suitable for various optoelectronic applications.
基金Project (50802115) supported by the National Natural Science Foundation of ChinaProject (2010FJ4075) supported by Science and Technology Planning Project of Hunan Province, China+1 种基金Project (CDJJ-10010205) supported by the Science Foundation of Changsha University, ChinaProject supported by the Construct Program of the Key Discipline in Hunan Province, China
文摘Viscose activated carbon fibers （ACFs） were characterized using specific surface area, scanning electron modified with chemical vapor deposition （CVD）. The samples were microscopy （SEM）, pore size distribution and Fourier transform infrared spectroscopy （FTIR）. Batch adsorption experiments were carried out to investigate the adsorption behavior of modified ACFs for methyl orange（MO） from its aqueous solutions. The results show that the adsorption isotherms of MO onto modified ACFs well follows the Langmuir isotherm equation. The adsorption kinetics of MO can be well described by the pseudo second-order kinetic model. The adsorption process involves the intra-particle diffusion, but is not the only rate-controlling step. Thermodynamic parameters including AG, AH and AS were calculated, suggesting that the adsorption of MO onto modified ACFs is a spontaneous, exothermic and physisorption process. FTIR result indicates that the major adsorption mechanism of modified ACFs for MO is hydrogen bond.
文摘Hafnium oxide thin films （HOTFs） were successfully deposited onto amorphous glasses using chemical bath deposition, successive ionic layer absorption and reaction （SILAR）, and sol-gel methods. The same reactive precursors were used for all of the methods, and all of the films were annealed at 300℃ in an oven （ambient conditions）. After this step, the optical and structural properties of the films produced by using the three different methods were compared. The structures of the films were analyzed by X-ray diffTaction （XRD）. The optical properties are investigated using the ultraviolet-visible （UV-VIS） spectroscopic technique. The film thickness was measured via atomic force microscopy （AFM） in the tapping mode. The surface properties and elemental ratios of the films were investigated and measured by scanning electron microscopy and energy-dispersive X-ray spectroscopy （EDX）. The lowest transmittance and the highest reflectance values were observed for the films produced using the SILAR method. In addition, the most intense characteristic XRD peak was observed in the diffraction pattern of the film produced using the SILAR method, and the greatest thickness and average grain size were calculated for the film produced using the SILAR method. The films produced using SILAR method contained fewer cracks than those produced using the other methods. In conclusion, the SILAR method was observed to be the best method for the production of HOTFs.
文摘Polyaniline （PA） film was chemically deposited onto the surface of activated carbon （AC） uniformly. Chemical deposition was carried out in 0.1 mol/L aniline plus 0.5 mol/L H2SO4 solution adopting V2O5·nH2O coated on the surface of activated carbon as oxidant. The surface morphologies and structures of the composite materials were characterized by scanning electron microscopy and FT-IR spectra. The electrochemical properties of the composite material electrodes were studied by cyclic voltammetry and constant current charge/discharge tests in 1 molFL H2SO4 solutions. The specific capacitance of composite materials was exhibited as high as 237.5 F/g at a current density of 1.0 A/g compared with a value of 120 F/g for pure carbon electrode. Good power characteristic and good stability of composite electrodes were also demonstrated.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.60676032,60776041,60976009 and U0834001)the National Basic Research program of China(Grant No.2007CB307004)
文摘We report on the growth and fabrication of nonpolar a-plane light emitting diodes with an in-situ SiNx interlayer grown between the undoped a-plane GaN buffer and Si-doped GaN layer. X-ray diffraction shows that the crystalline quality of the GaN buffer layer is greatly improved with the introduction of the SiNx interlayer. The electrical properties are also improved. For example, electron mobility and sheet resistance are reduced from high resistance to 31.6 cm2/（V· s） and 460 Ω/respectively. Owing to the significant effect of the SiNx interlayer, a-plane LEDs are realized. Electrolurninescence of a nonpolar a-plane light-emitting diode with a wavelength of 488nm is demonstrated. The emission peak remains constant when the injection current increases to over 20 mA.
基金Project(51275302)supported by the National Natural Science Foundation of ChinaProject(BC2012124)supported by Technical Innovation Funds for the Sci-Tech Enterprise of Jiangsu Province,China
文摘The effects of Si doping on morphology, components and structure characteristics of CVD diamond films were studied. Si-doped CVD diamond films were deposited on Si substrate by adding tetraethoxysilane （TEOS） into acetone as source of reactant gas. The morphology and microstructure of diamond films were characterized by scanning electron microcopy （SEM）. The crystalline quality of diamond films was studied by Raman spectroscopy and X-ray diffractometry （XRD）. The surface roughness of the films was evaluated with surface profilometer. The results suggest that Si doping tends to reduce the crystallite size, enhance grain refinement and inhibit the appearance of （11 I） facets. Raman spectra indicate that Si doping can enhance the formation of sp2 phase in diamond films. Moreover, Raman signal of SiC was detected, which suggests the existence of Si in the diamond films. Smooth fine-grained diamond （SFGD） film was synthesized at Si to C ratio of 1%.
文摘ZnO thin films were grown on GaAs （001） substrates by metal-organic chemical vapor deposition （MOCVD） at low temperatures ranging from 100 to 400℃. DEZn and 1-12 O were used as the zinc precursor and oxygen precursor, respectively. The effects of the growth temperatures on the growth characteristics and optical properties of ZnO films were investigated. The X-ray diffraction measurement （XRD） results indicated that all the thin films were grown with highly c- axis orientation. The surface morphologies and crystal properties of the films were critically dependent on the growth temperatures. Although there was no evidence of epitaxial growth, the scanning electron microscopy （SEM） image of ZnO film grown at 400℃ revealed the presence of ZnO microcrystallines with closed packed hexagon structure. The photoluminescence spectrum at room temperature showed only bright band-edge （3. 33eV） emissions with little or no deep-level e- mission related to defects.
基金Supported by the Key Natural Science Foundation for Universities of Jiangsu Province（06KJA53012） the National Natural Science Foundation of China（20776069 20976084）
文摘Shape-selective catalysts for the disproportionation of toluene were prepared by the modification of the cylinder-shaped ZSM-5 zeolite extrudates with chemical liquid deposition with TEOS （tetraethyl orthosilicate）.Various parameters for preparing catalysts were changed to investigate the suitable conditions.The resulting cata-lysts were tested in a pressured fixed bed reactor and characterized by SEM （scanning electron microscopy）.The conversion of toluene and para-xylene selectivity were influenced remarkably by the n（SiO2）/n（Al2O3） ratio of ZSM-5 zeolite,the type and amount of deposition agent,acid and solvent used,and the time and cycle of deposition treatment.TEOS was proved to be a more efficient agent than the conventional polysiloxanes when the deposition amount was low.The catalyst prepared at the suitable conditions exhibited a high para-xylene selectivity of 91.1% with considerable high conversion of 25.6%.SEM analyses confirmed the formation of a layer of amorphous silica on the external surface of ZSM-5 zeolie crystals,which was responsible for the highly enhanced shape-selectivity.
文摘Two-dimensional transition metal dichalcogenides heterostructures have stimulated wide in- terest not only for the fundamental research, but also for the application of next generation electronic and optoelectronic devices. Herein, we report a successful two-step chemical vapor deposition strategy to construct vertically stacked van der Waals epitaxial In2Se3/MoSe2 heterostructures. Transmission electron microscopy characterization reveals clearly that the In2Se3 has well-aligned lattice orientation with the substrate of monolayer MoSe2. Due to the interaction between the In2Se3 and MoSe2 layers, the heterostructure shows the quench- ing and red-shift of photoluminescence. Moreover, the current rectification behavior and photovoltaic effect can be observed from the heterostructure, which is attributed to the unique band structure alignment of the heterostructure, and is further confirmed by Kevin probe force microscopy measurement. The synthesis approach via van der Waals epitaxy in this work can expand the way to fabricate a variety of two-dimensional heterostructures for potential applications in electronic and optoelectronic devices.
基金Supported by the Natural Science Foundation of Shandong Province of China （ZR2009BM011） and the Doctor Foundation of Shandong Province of China （BS2010NJ005）.
文摘Various methods for production of polysilicon have been proposed for lowering the production cost andenergy consumption, and enhancing productivity, which are critical for industrial applications. The fluidized bed chemical vapor deposition （FBCVD） method is a most promising alternative to conventional ones, but the homogeneous reaction of silane in FBCVD results in unwanted formation of fines, which will affect the product qualityand output. There are some other problems, such as heating degeneration due to undesired polysilicon deposition on the walls of the reactor and the heater. This article mainly reviews the technological development on FBCVD of polycrystalline silicon and the research status for solving the above problems. It also identifies a number of challenges to tackle and principles should be followed in the design ofa FBCVD reactor.
