The squeezing deformation of surrounding rock is an important factor restricting the safe construction and long-term operation of tunnels when a tunnel passes through soft strata with high ground stress.Under such sof...The squeezing deformation of surrounding rock is an important factor restricting the safe construction and long-term operation of tunnels when a tunnel passes through soft strata with high ground stress.Under such soft rock geological conditions,the large deformation of the surrounding rock can easily lead to the failure of supporting structures,including shotcrete cracks,spalling,and steel arch distortion.To improve the lining support performance during the large deformation of squeezed surrounding rock,this work selects aluminum foam with densities of 0.25 g/cm3,0.42 g/cm3 and 0.61 g/cm3 as the buffer layer material and carries out uniaxial confined compression tests.Through the evaluation and analysis of energy absorption and the comparison of the yield pressure of aluminum foam with those of other cushioning materials and yield pressure support systems,the strength,deformation and energy absorption of aluminum foam with a density of 0.25 g/cm3 meet the yield pressure performance requirements.The numerical model of the buffer layer yielding support system is then established via the finite element analysis software ABAQUS,and the influence of the buffer layer setting on the lining support is analyzed.Compared with the conventional support scheme,the addition of an aluminum foam buffer layer can reduce the stress and deformation of the primary support and secondary lining.The maximum and minimum principal stresses of the primary support are reduced by 13%and 15%,respectively.The maximum and minimum principal stresses of the secondary lining are reduced by 15%and 12%,respectively,and the displacement deformation of the secondary lining position is reduced by 15%.In summary,the application of aluminum foam buffer layer can reduce the stress and deformation of the primary support and secondary lining,improve the stress safety of the support and reduce the deformation of the support.展开更多
Optimizing the orientation of β-Ga_(2)O_(3) has emerged as an effective strategy to design high-performance β-Ga_(2)O_(3) device,but the orientation growth mechanism and approach have not been revealed yet.Herein,by...Optimizing the orientation of β-Ga_(2)O_(3) has emerged as an effective strategy to design high-performance β-Ga_(2)O_(3) device,but the orientation growth mechanism and approach have not been revealed yet.Herein,by employing AlN buffer layer,the highly preferred orientation of β-Ga_(2)O_(3)(100)film rather than(-201)film is realized on 4H-SiC substrate at low sputtering power and temperature.Because β-Ga_(2)O_(3)(100)film exhibits a slower growth speed than(-201)film,the former possesses the higher dangling bond density and the lower nucleation energy,and a large conversion barrier exists between these two ori-entations.Moreover,the AlN buffer layer can suppress the surface oxidation of the 4H-SiC substrate and eliminate the strain of β-Ga_(2)O_(3)(100)film,which further reduces the nucleation energy and en-larges the conversion barrier.Meanwhile,the AlN buffer layer can increase the oxygen vacancy formation energy and decrease the oxygen vacancy concentration of β-Ga_(2)O_(3)(100)film.Consequently,the solar-blind photodetector based on the oriented film exhibits the outstanding detectivity of 1.22×10^(12) Jones and photo-to-dark current ratio of 1.11×10^(5),which are the highest among the reported β-Ga_(2)O_(3) solar-blind photodetector on the SiC substrate.Our results offer in-depth insights into the preferred orientation growth mechanism,and provide an effective way to design high-quality β-Ga_(2)O_(3)(100)orientation film and high-performance solar-blind photodetector.展开更多
Field-free spin-orbit torque(SOT)switching of perpendicular magnetization is essential for future spintronic devices.This study demonstrates the field-free switching of perpendicular magnetization in an HfO_(2)/Pt/Co/...Field-free spin-orbit torque(SOT)switching of perpendicular magnetization is essential for future spintronic devices.This study demonstrates the field-free switching of perpendicular magnetization in an HfO_(2)/Pt/Co/TaO_(x) structure,which is facilitated by a wedge-shaped HfO_(2)buffer layer.The field-free switching ratio varies with HfO_(2)thickness,reaching optimal performance at 25 nm.This phenomenon is attributed to the lateral anisotropy gradient of the Co layer,which is induced by the wedge-shaped HfO_(2)buffer layer.The thickness gradient of HfO_(2)along the wedge creates a corresponding lateral anisotropy gradient in the Co layer,correlating with the switching ratio.These findings indicate that field-free SOT switching can be achieved through designing buffer layer,offering a novel approach to innovating spin-orbit device.展开更多
Aqueous Zn-based batteries(AZBs)are hindered by issues associated with the Zn electrodeposition process(ZEDP)on electrode surfaces,including passivation,dendrite formation,and hydrogen evolution.One of the important r...Aqueous Zn-based batteries(AZBs)are hindered by issues associated with the Zn electrodeposition process(ZEDP)on electrode surfaces,including passivation,dendrite formation,and hydrogen evolution.One of the important reasons is the drastic fluctuation in the concentration of Zn^(2+)ions on the electrode surface during the charging and discharging process.In this work,an electrolyte with Zn^(2+)ion buffer layer(EZIBL)is proposed to regulate the ZEDP.First,numerical simulations and corresponding experiments are conducted to assess the impact of different thicknesses of the Zn^(2+)ion buffer layer(ZIBL)on the variation in Zn^(2+)ion concentration,from which the optimal thickness of the ZIBL is determined.Then,the regulation role of EZIBL in the cycling process is demonstrated by a Zn-Cu half cell.Further,combined with the potential profile of the symmetric cell and the experimental phenomena,the regulation role of EZIBL in ZEDP is systematically explained at the mechanistic level through the analysis of key parameters.Finally,a full battery composed of Zn-LiMn2O4 is assembled to evaluate the practical applicability of the EZIBL in real battery cycles,which shows great enhancement in capacity retention and coulombic efficiency.This work proposes the design of the EZIBL used to regulate the ZEDP and provides a simple,low-cost regulation method for the development of high-performance AZBs.展开更多
The role of bathophenanthroline （Bphen） as a buffer layer inserted between fullerene （C60） and Ag cathode in organic photovoltaic （OPV） cell was discussed. By introducing Bphen as a buffer layer with thicknes fr...The role of bathophenanthroline （Bphen） as a buffer layer inserted between fullerene （C60） and Ag cathode in organic photovoltaic （OPV） cell was discussed. By introducing Bphen as a buffer layer with thicknes from 0 to 2.5 nm, the power conversion efficiency of the OPV cell based on copper phthalocyanine （CuPc） and C60 was increased from 0.87% to 2.25% under AM 1.5 solar illumination at an intensity of 100 mW/cm^2, which was higher than that of bathocuproine used as a buffer layer. The photocurrent-voltage characteristics showed that Bphen effectively improves electron transport through C60 layer into Ag electrode and leads to balance charge carrier transport capability. The influence of Bphen thickness on OPV cells was also investigated. Furthermore, the absorption spectrum shows that an additional Bphen layer enhances the light harvest capability of CuPc/C60.展开更多
CuI thin films with nano-scale grains of about 35nm were deposited via spraying method with using acetonitrile as solvent. The influence of iodine doping concentration in acetonitrile solution on the structure, topogr...CuI thin films with nano-scale grains of about 35nm were deposited via spraying method with using acetonitrile as solvent. The influence of iodine doping concentration in acetonitrile solution on the structure, topographic and optical properties of CuI thin films was investigated. X-ray diffraction results showed that CuI iodine-doped films doped CuI：I2 were in γ-phase of zinc blende structure with （111） preferential plane. Scanning electron microscopy revealed that the microstructure of CuI films depended on the relative amount of doping iodine in the solution. When the iodine doping amount in acetonitrile solution was 0.025 g, the film was uniform and compact, the optical transmittance was 75.4% in the part of visible region and the energy band gap was close to 2.96 eV.展开更多
An electron transporting material of TFTTP （4-（5-hexylthiophene-2-yl）-2,6-bis（5-trifluoromethyl）thiophen-2-yl）pyridine） was investigated as a cathode buffer layer to enhance the power efficiency of organic sola...An electron transporting material of TFTTP （4-（5-hexylthiophene-2-yl）-2,6-bis（5-trifluoromethyl）thiophen-2-yl）pyridine） was investigated as a cathode buffer layer to enhance the power efficiency of organic solar cells （OSCs） based on subphthalocyanine and C60. The overall power conversion efficiency was increased by a factor of 1.31 by inserting the TFTTP interfacial layer between the active layer and metallic cathode. The inner mechanism responsible for the performance enhancement of OSCs was systematically studied with the simulation of dark diode behavior and optical field distribution inside the devices as well as the characterization of device photocurrent. The results showed that the TFTTP layer could significantly increase the built-in potential in the devices, leading to the enhanced dissociation of charge transfer excitons. In addition, by using TFTTP as the buffer layer, a better Ohmic contact at C60/metal interface was formed, facilitating more efficient free charge carrier collection.展开更多
The interface between the active layer and the electrode is one of the most critical factors that could affect the device performance of polymer solar cells. In this work, based on the typical poly（3-hexylthiophene）...The interface between the active layer and the electrode is one of the most critical factors that could affect the device performance of polymer solar cells. In this work, based on the typical poly（3-hexylthiophene）：[6,6]-phenyl C61-butyric acid methyl ester （P3HT：PCBM） polymer solar cell, we studied the effect of the cathode buffer layer （CBL） between the top metal electrode and the active layer on the device performance. Several inorganic and organic materials commonly used as the electron injection layer in an organic light-emitting diode （OLED） were employed as the CBL in the P3HT：PCBM polymer solar cells. Our results demonstrate that the inorganic and organic materials like Cs2CO3, bathophenanthroline （Bphen）, and 8-hydroxyquinolatolithium （Liq） can be used as CBL to efficiently improve the device performance of the P3HT：PCBM polymer solar cells. The P3HT：PCBM devices employed various CBLs possess power conversion efficiencies （PCEs） of 3.0%-3.3%, which are ca. 50% improved compared to that of the device without CBL. Furthermore, by using the doped organic materials Bphen：Cs2CO3 and Bphen：Liq as the CBL, the PCE of the P3HT：PCBM device will be further improved to 3.5%, which is ca. 70% higher than that of the device without a CBL and ca. 10% increased compared with that of the devices with a neat inorganic or organic CBL.展开更多
In this work, water-based precursor solutions suitable for dip-coating of thick La2Zr2O7 （LZO） buffer layers for coated conductors on Ni-5%W substrates with an inclusion of polymeric polyvinyl pyrrolidone were devel...In this work, water-based precursor solutions suitable for dip-coating of thick La2Zr2O7 （LZO） buffer layers for coated conductors on Ni-5%W substrates with an inclusion of polymeric polyvinyl pyrrolidone were developed. The effect of varying percentage of the polymer addition on the preparation of the deposited films with maximum crack-free thickness was investigated. This novel water-based chemical solution deposition method involving polymers in two different chelate-chemistry compositions revealed the possibility to grow single, crack-free layers with thicknesses ranging from 140 to 280 nm, with good crystallinity and epitaxial growth. The effect of increasing polymer concentrations on the morphology and the structure of the films was studied. The appropriate buffer layer action of the films in preventing Ni diffusion was studied by X-ray photoelectron spectroscopy.展开更多
A high-effective bottom anode is essential for high-performance top-emitting organic light-emitting devices (OLEDs). In this paper, Ag-based top-emitting OLEDs are investigated. Ag has the highest reflectivity for vis...A high-effective bottom anode is essential for high-performance top-emitting organic light-emitting devices (OLEDs). In this paper, Ag-based top-emitting OLEDs are investigated. Ag has the highest reflectivity for visible light among all metals, yet its hole-injection properties are not ideal for anodes of top-emitting OLED. The performance of the devices is significantly improved using the molybdenum oxide as anode buffer layer at the surface of Ag. By introducing the molybdenum oxide, the hole injection from Ag anodes into top-emitting OLED is largely enhanced with rather high reflectivity retained.展开更多
This paper reported a novel coating approach to deposit a （HA） film on Ti6Al4V alloy with Al2O3 buffer layer for thin, crack free and nano-structured hydroxyapatite biomedical implants. The Al2O3 buffer layer was de...This paper reported a novel coating approach to deposit a （HA） film on Ti6Al4V alloy with Al2O3 buffer layer for thin, crack free and nano-structured hydroxyapatite biomedical implants. The Al2O3 buffer layer was deposited by plasma spraying while the HA top layer was applied by dip coating technique. The X-ray diffraction （XRD） and Raman reflections of alumina buffer layer showed α- to γ-Al2O3 phase transformation; and the fractographic analysis of the sample revealed the formation of columnar grains in well melted splats. The bonding strength between Al2O3 coating and Ti6Al4V substrate was estimated to be about 40 MPa. The presence of dip coated HA layer was confirmed using XRD, scanning electron microscopy （SEM） and energy dispersive X-ray spectroscopy （EDX） analysis. The SEM images exhibited that HA top layer enveloped homogenously the troughs and crests of the underneath rough （Ra = 2.91 μm） Al2O3 surface. It is believed that the novel coating approach adopted might render the implant suitable for rapid cement-less fixation as well as biocompatible for longer periods.展开更多
Cd1_xZnxS （x = 0, 0.1, 0.2, 0.3, 1.0） thin films have been grown successfully on soda-lime glass substrates by chemical bath deposition technique as a very promising buffer layer material for optoelectronic device a...Cd1_xZnxS （x = 0, 0.1, 0.2, 0.3, 1.0） thin films have been grown successfully on soda-lime glass substrates by chemical bath deposition technique as a very promising buffer layer material for optoelectronic device applications. The composition, structural properties, surface morphol- ogy, and optical properties of Cd~_xZnxS thin films were characterized by energy dispersive analysis of X-ray tech- nique （EDAX）, X-ray diffraction （XRD）, scanning electron microscopy （SEM）, and UV-Vis spectrophotometer tech- niques, respectively. The annealed films were observed to possess the deficient sulfur composition. The results of XRD show that the Cdl_xZnxS （x = 0. l） thin film annealed at 450 ~C forms hexagonal （wurtzite） structure with lattice parameters a = 0.408814 nm, c ： 0.666059 nm, and its average grain size is 24.9902 nm. The diffraction peaks become strong with the increasing annealing temperatures. The surface of Cdl_~ZnxS （x = 0.1） thin film annealed at 450 ~C is uninterrupted and homogenous as compared to other temperatures. From optical properties, it is observed that the presence of small amount of Zn results in marked changes in the optical band gap of CdS. The band gaps of the Cdl_xZnxS thin films vary from 2.42 to 3.51 eV as composition varies from x = 0.0 to 1.0.展开更多
Polycrystalline ZnS films were prepared by pulsed laser deposition （PLD） on quartz glass substrates under different growth conditions at different substrate temperatures of 20, 200, 400, and 600 ℃, which is a suita...Polycrystalline ZnS films were prepared by pulsed laser deposition （PLD） on quartz glass substrates under different growth conditions at different substrate temperatures of 20, 200, 400, and 600 ℃, which is a suitable alternative to chemical bath deposited （CBD） CdS as a buffer layer in Cu（In,Ga）Se2 （CIGS） solar cells. X-ray diffraction studies indicate the films are polycrystalline with zinc-blende structure and they exhibit preferential orientation along the cubic phase β-ZnS （111） direction, which conflicts with the conclusion of wurtzite structure by Murali that the ZnS films deposited by pulse plating technique was polycrystalline with wurtzite structure. The Raman spectra of grown films show Al mode at approximately 350 cm^-1, generally observed in the cubic phase β-ZnS compounds. The planar and the cross-sectional morphology were observed by scanning electron microscopic. The dense, smooth, uniform grains are formed on the quartz glass substrates through PLD technique. The grain size of ZnS deposited by PLD is much smaller than that of CdS by conventional CBD method, which is analyzed as the main reason of detrimental cell performance. The composition of the ZnS films was also measured by X-ray fluorescence. The typical ZnS films obtained in this work are near stoichiometric and only a small amount of S-rich. The energy band gaps at different temperatures were obtained by absorption spectroscopy measurement, which increases from 3.2 eV to 3.7 eV with the increasing of the deposition temperature. ZnS has a wider energy band gap than CdS （2.4 eV）, which can enhance the blue response of the photovoltaic cells. These results show the high-quality of these substitute buffer layer materials are prepared through an all-dry technology, which can be used in the manufacture of CIGS thin film solar cells.展开更多
Use of a buttering deposit on ferritic steel in dissimilar metal weld（DMW） joint is a common practice in nuclear plants to connect pressure vessel components（ferritic steel） to pipelines（austenitic stainless stee...Use of a buttering deposit on ferritic steel in dissimilar metal weld（DMW） joint is a common practice in nuclear plants to connect pressure vessel components（ferritic steel） to pipelines（austenitic stainless steel）.Carbon migration and metallurgical changes near fusion interface（ferritic steel–austenitic stainless steel） lead to a steeper gradient in material properties,and minimizing this gradient is the major challenge in the manufacturing of DMW joints.Inconel 82 is often deposited on ferritic steel material as buttering to reducing the gradient of physical and attaining material compatibility.Inconel 82/182 fillers are used to minimize the carbon migration,but the results are not truly adequate.In this paper,Ni–Fe alloy（chromium-free） has been used as the intermediate buffer layer in the weld buttering deposit to address the issue of carbon migration and subsequent metallurgical deterioration.The weld pads with and without buffer layers of Ni–Fe alloy have been investigated and compared in detail for metallurgical properties and carbon diffusivities.Ni–Fe buffer layer can significantly control the carbon migration which resists the metallurgical deterioration.It showed the better results in postweld heat treatment and thermally aged conditions.The buttering deposit with Ni–Fe buffer layer could be the better choice for DMW joints requirements.展开更多
NiO buffer layers were formed on a tape of Ni for making YBCO coated conductor by surface-oxidation epitaxy （SOE） process. Different oxidizing conditions such as temperature and duration were studied for Ni tapes. I...NiO buffer layers were formed on a tape of Ni for making YBCO coated conductor by surface-oxidation epitaxy （SOE） process. Different oxidizing conditions such as temperature and duration were studied for Ni tapes. It is found that the texture of NiO could be affected directly by the orientation and surface of substrate. X-ray diffraction （XRD） 2-2θ scan, φ-scan, and pole figure were employed to characterize the in-plane alignment and cube texture. X-ray φ-scan shows that NiO film is formed on Ni tape with high cube texture and a typical value at the full width at half maximum （FWHM） is ≤ 7.5°. Scanning electron microscopy was used to study the surface morphology of NiO films. No crack is found and the films appear dense. Such technique is simple and of low cost with perfect reproducibility, promising for developing long tapes.展开更多
An organic light-emitting diode （OLED） device with high efficiency and brightness is fabricated by inserting CuOJCu dual inorganic buffer layers between indium-tin-oxide （ITO） and hole-transport layer （HTL）. The...An organic light-emitting diode （OLED） device with high efficiency and brightness is fabricated by inserting CuOJCu dual inorganic buffer layers between indium-tin-oxide （ITO） and hole-transport layer （HTL）. The CuOx/Cu buffer layer limits the operating current density obviously, while the brightness and efficiency are both enhanced greatly. The highest brightness of the optimized device is achieved to be 14 000 cd/m2 at current efficiency of 3 cd/A and bias voltage of 15 V, which is about 50% higher than that of the compared device without CuOJCu buffer layer. The highest efficiency is achieved to be 5.9 cd/A at 11.6 V with 3 400 cd/m^2, which is almost twice as high as that of the compared device.展开更多
To evaluate the influence of the ZnO buffer layer and A1 proportion on the properties of ZnO： A1 （AZO）/ZnO bi-layer films, a series of AZO/ZnO films are deposited on the quartz substrates by electron beam evaporati...To evaluate the influence of the ZnO buffer layer and A1 proportion on the properties of ZnO： A1 （AZO）/ZnO bi-layer films, a series of AZO/ZnO films are deposited on the quartz substrates by electron beam evaporation. The X-ray diffraction measurement shows that the crystal quality of the films is improved with the increase of the film thickness. The electrical properties of the films are investigated. The carrier concentration and Hall mobility both increase with the increase of buffer layer thickness. However, the resistivity reaches the lowest at about 50 nm-thick buffer layer. The lowest resistivity and the maximum Hall mobility are both obtained at 1 wt% Al concentration. But the optical transmittance of all the films is greater than 80% regardless of the buffer layer thickness with A1 concentration lower than 5 wt% in the visible region.展开更多
In this paper we report that the GaN thin film is grown by metal-organic chemical vapour deposition on a sapphire （0001） substrate with double A1N buffer layers. The buffer layer consists of a low-temperature （LT）...In this paper we report that the GaN thin film is grown by metal-organic chemical vapour deposition on a sapphire （0001） substrate with double A1N buffer layers. The buffer layer consists of a low-temperature （LT） A1N layer and a high-temperature （HT） A1N layer that are grown at 600 ℃ and 1000 ℃, respectively. It is observed that the thickness of the LT-A1N layer drastically influences the quality of GaN thin film, and that the optimized 4.25-min-LT-A1N layer minimizes the dislocation density of GaN thin film. The reason for the improved properties is discussed in this paper.展开更多
In this paper,bulk heterojunction solar cells with poly-(3-hexylthiophene)(P3HT):[6,6]-phenyl-C61-butyric-acid-methylester(PCBM) as an active layer and modified poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)(...In this paper,bulk heterojunction solar cells with poly-(3-hexylthiophene)(P3HT):[6,6]-phenyl-C61-butyric-acid-methylester(PCBM) as an active layer and modified poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)(PEDOT:PSS) as a buffer layer are fabricated.The buffer layer is modified by adding 1% to 5% dimethyl sulfoxide(DMSO) into PEDOT:PSS solution before spin-coating.The conductivity of modified PEDOT:PSS and the performance of solar cells with modified PEDOT:PSS are measured.The highest conductivity of modified PEDOT:PSS with 4% DMSO can achieve 89.693 S/cm.The performance of organic solar cell with PEDOT:PSS modified by 4% DMSO is the best.The 4% DMSOmodified-PEDOT:PSS cell has a power conversion efficiency of 3.34%,V oc of 5.7 V,J sc of 14.56 mA/cm 2 and filling factor(FF) of 40.34%.展开更多
The magnetic and structural properties in Co/Cu/Co sandwiches with Ni and Cr buffer layers were investigated. It was found that the coercivity in Ni layer buffered samples decreases with increasing Ni layer thickness,...The magnetic and structural properties in Co/Cu/Co sandwiches with Ni and Cr buffer layers were investigated. It was found that the coercivity in Ni layer buffered samples decreases with increasing Ni layer thickness, while that in Cr layer buffered ones increases with increasing Cr layer thickness, leading to a large difference in field sensitivity of their giant magnetoresistance (GMR) properties. X-ray diffraction and high resolution transmission electron microscope images exhibited that there is a strong fcc (111) texture in the samples with Ni buffer layer. But there are only randomly oriented potycrystalline grains in Cr buffered sandwiches. According to atomic force microscope topography, the surface roughness of Cr buffered sandwiches is smaller than that of Ni buffered ones. It is demonstrated that buffer layer influences both magnetic and structural properties in Co/Cu/Co sandwiches as well as their GMR characteristics.展开更多
基金the support of the National Natural Science Foundation of China(Grant No.42207199)Scientific Research Project of Education of Zhejiang Province(No.Y202351343)+1 种基金Zhejiang Postdoctoral Scientific Research Project(Grant Nos.ZJ2022155,ZJ2022156)Zhejiang Province International Science and Technology Cooperation Base Open Fund Project(IBGDP-2023-01)。
文摘The squeezing deformation of surrounding rock is an important factor restricting the safe construction and long-term operation of tunnels when a tunnel passes through soft strata with high ground stress.Under such soft rock geological conditions,the large deformation of the surrounding rock can easily lead to the failure of supporting structures,including shotcrete cracks,spalling,and steel arch distortion.To improve the lining support performance during the large deformation of squeezed surrounding rock,this work selects aluminum foam with densities of 0.25 g/cm3,0.42 g/cm3 and 0.61 g/cm3 as the buffer layer material and carries out uniaxial confined compression tests.Through the evaluation and analysis of energy absorption and the comparison of the yield pressure of aluminum foam with those of other cushioning materials and yield pressure support systems,the strength,deformation and energy absorption of aluminum foam with a density of 0.25 g/cm3 meet the yield pressure performance requirements.The numerical model of the buffer layer yielding support system is then established via the finite element analysis software ABAQUS,and the influence of the buffer layer setting on the lining support is analyzed.Compared with the conventional support scheme,the addition of an aluminum foam buffer layer can reduce the stress and deformation of the primary support and secondary lining.The maximum and minimum principal stresses of the primary support are reduced by 13%and 15%,respectively.The maximum and minimum principal stresses of the secondary lining are reduced by 15%and 12%,respectively,and the displacement deformation of the secondary lining position is reduced by 15%.In summary,the application of aluminum foam buffer layer can reduce the stress and deformation of the primary support and secondary lining,improve the stress safety of the support and reduce the deformation of the support.
基金supported by the National Key Research and Development Program of China(No.2021YFA0715600)the National Natural Science Foundation of China(Nos.62274125,52192611)+2 种基金the Guangdong Basic and Applied Basic Research Fund(No.2023A1515030084)the Key Research and Development Program of Shaanxi Province(Grant No.2024GX-YBXM-410)the fund of the State Key Laboratory of Solidification Processing in NWPU(No.SKLSP202220).
文摘Optimizing the orientation of β-Ga_(2)O_(3) has emerged as an effective strategy to design high-performance β-Ga_(2)O_(3) device,but the orientation growth mechanism and approach have not been revealed yet.Herein,by employing AlN buffer layer,the highly preferred orientation of β-Ga_(2)O_(3)(100)film rather than(-201)film is realized on 4H-SiC substrate at low sputtering power and temperature.Because β-Ga_(2)O_(3)(100)film exhibits a slower growth speed than(-201)film,the former possesses the higher dangling bond density and the lower nucleation energy,and a large conversion barrier exists between these two ori-entations.Moreover,the AlN buffer layer can suppress the surface oxidation of the 4H-SiC substrate and eliminate the strain of β-Ga_(2)O_(3)(100)film,which further reduces the nucleation energy and en-larges the conversion barrier.Meanwhile,the AlN buffer layer can increase the oxygen vacancy formation energy and decrease the oxygen vacancy concentration of β-Ga_(2)O_(3)(100)film.Consequently,the solar-blind photodetector based on the oriented film exhibits the outstanding detectivity of 1.22×10^(12) Jones and photo-to-dark current ratio of 1.11×10^(5),which are the highest among the reported β-Ga_(2)O_(3) solar-blind photodetector on the SiC substrate.Our results offer in-depth insights into the preferred orientation growth mechanism,and provide an effective way to design high-quality β-Ga_(2)O_(3)(100)orientation film and high-performance solar-blind photodetector.
基金Project supported by the National Natural Science Foundation of China (Grant No.12274108)the Natural Science Foundation of Zhejiang Province,China (Grant Nos.LY23A040008 and LY23A040008)the Basic Scientific Research Project of Wenzhou,China (Grant No.G20220025)。
文摘Field-free spin-orbit torque(SOT)switching of perpendicular magnetization is essential for future spintronic devices.This study demonstrates the field-free switching of perpendicular magnetization in an HfO_(2)/Pt/Co/TaO_(x) structure,which is facilitated by a wedge-shaped HfO_(2)buffer layer.The field-free switching ratio varies with HfO_(2)thickness,reaching optimal performance at 25 nm.This phenomenon is attributed to the lateral anisotropy gradient of the Co layer,which is induced by the wedge-shaped HfO_(2)buffer layer.The thickness gradient of HfO_(2)along the wedge creates a corresponding lateral anisotropy gradient in the Co layer,correlating with the switching ratio.These findings indicate that field-free SOT switching can be achieved through designing buffer layer,offering a novel approach to innovating spin-orbit device.
基金funding support from National Innovative Talents Program(GG2090007001)USTC Startup Program(KY2090000044).
文摘Aqueous Zn-based batteries(AZBs)are hindered by issues associated with the Zn electrodeposition process(ZEDP)on electrode surfaces,including passivation,dendrite formation,and hydrogen evolution.One of the important reasons is the drastic fluctuation in the concentration of Zn^(2+)ions on the electrode surface during the charging and discharging process.In this work,an electrolyte with Zn^(2+)ion buffer layer(EZIBL)is proposed to regulate the ZEDP.First,numerical simulations and corresponding experiments are conducted to assess the impact of different thicknesses of the Zn^(2+)ion buffer layer(ZIBL)on the variation in Zn^(2+)ion concentration,from which the optimal thickness of the ZIBL is determined.Then,the regulation role of EZIBL in the cycling process is demonstrated by a Zn-Cu half cell.Further,combined with the potential profile of the symmetric cell and the experimental phenomena,the regulation role of EZIBL in ZEDP is systematically explained at the mechanistic level through the analysis of key parameters.Finally,a full battery composed of Zn-LiMn2O4 is assembled to evaluate the practical applicability of the EZIBL in real battery cycles,which shows great enhancement in capacity retention and coulombic efficiency.This work proposes the design of the EZIBL used to regulate the ZEDP and provides a simple,low-cost regulation method for the development of high-performance AZBs.
基金ACKNOWLEDGMENTS This work was supported by the National Natural Science Foundation of China （No.60736005 and No.60425101-1）, the Foundation for Innovative Research Groups of the National Natural Science Foundation of China （No.60721001）, the Provincial Program （No.9140A02060609DZ0208）, the Program for New Century Excellent Talents in University （No.NCET- 06-0812）, the Project Sponsored by the Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education Ministry （No.GGRYJJ08P 05）, and the Young Excellence Project of Sichuan （No.09ZQ026-074）.
文摘The role of bathophenanthroline （Bphen） as a buffer layer inserted between fullerene （C60） and Ag cathode in organic photovoltaic （OPV） cell was discussed. By introducing Bphen as a buffer layer with thicknes from 0 to 2.5 nm, the power conversion efficiency of the OPV cell based on copper phthalocyanine （CuPc） and C60 was increased from 0.87% to 2.25% under AM 1.5 solar illumination at an intensity of 100 mW/cm^2, which was higher than that of bathocuproine used as a buffer layer. The photocurrent-voltage characteristics showed that Bphen effectively improves electron transport through C60 layer into Ag electrode and leads to balance charge carrier transport capability. The influence of Bphen thickness on OPV cells was also investigated. Furthermore, the absorption spectrum shows that an additional Bphen layer enhances the light harvest capability of CuPc/C60.
基金Project (2091003) supported by Beijing Natural Science Foundation, China
文摘CuI thin films with nano-scale grains of about 35nm were deposited via spraying method with using acetonitrile as solvent. The influence of iodine doping concentration in acetonitrile solution on the structure, topographic and optical properties of CuI thin films was investigated. X-ray diffraction results showed that CuI iodine-doped films doped CuI：I2 were in γ-phase of zinc blende structure with （111） preferential plane. Scanning electron microscopy revealed that the microstructure of CuI films depended on the relative amount of doping iodine in the solution. When the iodine doping amount in acetonitrile solution was 0.025 g, the film was uniform and compact, the optical transmittance was 75.4% in the part of visible region and the energy band gap was close to 2.96 eV.
文摘An electron transporting material of TFTTP （4-（5-hexylthiophene-2-yl）-2,6-bis（5-trifluoromethyl）thiophen-2-yl）pyridine） was investigated as a cathode buffer layer to enhance the power efficiency of organic solar cells （OSCs） based on subphthalocyanine and C60. The overall power conversion efficiency was increased by a factor of 1.31 by inserting the TFTTP interfacial layer between the active layer and metallic cathode. The inner mechanism responsible for the performance enhancement of OSCs was systematically studied with the simulation of dark diode behavior and optical field distribution inside the devices as well as the characterization of device photocurrent. The results showed that the TFTTP layer could significantly increase the built-in potential in the devices, leading to the enhanced dissociation of charge transfer excitons. In addition, by using TFTTP as the buffer layer, a better Ohmic contact at C60/metal interface was formed, facilitating more efficient free charge carrier collection.
基金Project supported by the National Natural Science Foundation of China(Grant No.61204014)the“Chenguang”Project(13CG42)+1 种基金supported by Shanghai Municipal Education Commission and Shanghai Education Development Foundation,Chinathe Shanghai University Young Teacher Training Program of Shanghai Municipality,China
文摘The interface between the active layer and the electrode is one of the most critical factors that could affect the device performance of polymer solar cells. In this work, based on the typical poly（3-hexylthiophene）：[6,6]-phenyl C61-butyric acid methyl ester （P3HT：PCBM） polymer solar cell, we studied the effect of the cathode buffer layer （CBL） between the top metal electrode and the active layer on the device performance. Several inorganic and organic materials commonly used as the electron injection layer in an organic light-emitting diode （OLED） were employed as the CBL in the P3HT：PCBM polymer solar cells. Our results demonstrate that the inorganic and organic materials like Cs2CO3, bathophenanthroline （Bphen）, and 8-hydroxyquinolatolithium （Liq） can be used as CBL to efficiently improve the device performance of the P3HT：PCBM polymer solar cells. The P3HT：PCBM devices employed various CBLs possess power conversion efficiencies （PCEs） of 3.0%-3.3%, which are ca. 50% improved compared to that of the device without CBL. Furthermore, by using the doped organic materials Bphen：Cs2CO3 and Bphen：Liq as the CBL, the PCE of the P3HT：PCBM device will be further improved to 3.5%, which is ca. 70% higher than that of the device without a CBL and ca. 10% increased compared with that of the devices with a neat inorganic or organic CBL.
基金funding under the project grants P2/00/03 (CHEMAT)IAP/VI-17(INANOMAT) and FP7-NMP-2007- SMALL-1 Grant No.205854(EFECTS)
文摘In this work, water-based precursor solutions suitable for dip-coating of thick La2Zr2O7 （LZO） buffer layers for coated conductors on Ni-5%W substrates with an inclusion of polymeric polyvinyl pyrrolidone were developed. The effect of varying percentage of the polymer addition on the preparation of the deposited films with maximum crack-free thickness was investigated. This novel water-based chemical solution deposition method involving polymers in two different chelate-chemistry compositions revealed the possibility to grow single, crack-free layers with thicknesses ranging from 140 to 280 nm, with good crystallinity and epitaxial growth. The effect of increasing polymer concentrations on the morphology and the structure of the films was studied. The appropriate buffer layer action of the films in preventing Ni diffusion was studied by X-ray photoelectron spectroscopy.
基金supported by the National Natural Science Foundation of China (No.60425101)the Young Excellence Project of University of Electronic Science and Technology of China (No.UESTC-060206)the Fundamental Research Funds for the Central Universities of China (Nos.ZYGX2010Z004 and ZYGX2009J054)
文摘A high-effective bottom anode is essential for high-performance top-emitting organic light-emitting devices (OLEDs). In this paper, Ag-based top-emitting OLEDs are investigated. Ag has the highest reflectivity for visible light among all metals, yet its hole-injection properties are not ideal for anodes of top-emitting OLED. The performance of the devices is significantly improved using the molybdenum oxide as anode buffer layer at the surface of Ag. By introducing the molybdenum oxide, the hole injection from Ag anodes into top-emitting OLED is largely enhanced with rather high reflectivity retained.
文摘This paper reported a novel coating approach to deposit a （HA） film on Ti6Al4V alloy with Al2O3 buffer layer for thin, crack free and nano-structured hydroxyapatite biomedical implants. The Al2O3 buffer layer was deposited by plasma spraying while the HA top layer was applied by dip coating technique. The X-ray diffraction （XRD） and Raman reflections of alumina buffer layer showed α- to γ-Al2O3 phase transformation; and the fractographic analysis of the sample revealed the formation of columnar grains in well melted splats. The bonding strength between Al2O3 coating and Ti6Al4V substrate was estimated to be about 40 MPa. The presence of dip coated HA layer was confirmed using XRD, scanning electron microscopy （SEM） and energy dispersive X-ray spectroscopy （EDX） analysis. The SEM images exhibited that HA top layer enveloped homogenously the troughs and crests of the underneath rough （Ra = 2.91 μm） Al2O3 surface. It is believed that the novel coating approach adopted might render the implant suitable for rapid cement-less fixation as well as biocompatible for longer periods.
基金financially supported by Key Natural Science Foundation of Education Department of Inner Mongolia Autonomous Region of China (No. NJZZ11013) Natural Science Foundation of Inner Mongolia Autonomous Region of China (No. 2012MS0117)
文摘Cd1_xZnxS （x = 0, 0.1, 0.2, 0.3, 1.0） thin films have been grown successfully on soda-lime glass substrates by chemical bath deposition technique as a very promising buffer layer material for optoelectronic device applications. The composition, structural properties, surface morphol- ogy, and optical properties of Cd~_xZnxS thin films were characterized by energy dispersive analysis of X-ray tech- nique （EDAX）, X-ray diffraction （XRD）, scanning electron microscopy （SEM）, and UV-Vis spectrophotometer tech- niques, respectively. The annealed films were observed to possess the deficient sulfur composition. The results of XRD show that the Cdl_xZnxS （x = 0. l） thin film annealed at 450 ~C forms hexagonal （wurtzite） structure with lattice parameters a = 0.408814 nm, c ： 0.666059 nm, and its average grain size is 24.9902 nm. The diffraction peaks become strong with the increasing annealing temperatures. The surface of Cdl_~ZnxS （x = 0.1） thin film annealed at 450 ~C is uninterrupted and homogenous as compared to other temperatures. From optical properties, it is observed that the presence of small amount of Zn results in marked changes in the optical band gap of CdS. The band gaps of the Cdl_xZnxS thin films vary from 2.42 to 3.51 eV as composition varies from x = 0.0 to 1.0.
基金ACKNOWLEDGMENTS This work was supported by the National Basic Research Program of China （No.2006CB92200） and the National Natural Science Foundation of China （No.10774136）.
文摘Polycrystalline ZnS films were prepared by pulsed laser deposition （PLD） on quartz glass substrates under different growth conditions at different substrate temperatures of 20, 200, 400, and 600 ℃, which is a suitable alternative to chemical bath deposited （CBD） CdS as a buffer layer in Cu（In,Ga）Se2 （CIGS） solar cells. X-ray diffraction studies indicate the films are polycrystalline with zinc-blende structure and they exhibit preferential orientation along the cubic phase β-ZnS （111） direction, which conflicts with the conclusion of wurtzite structure by Murali that the ZnS films deposited by pulse plating technique was polycrystalline with wurtzite structure. The Raman spectra of grown films show Al mode at approximately 350 cm^-1, generally observed in the cubic phase β-ZnS compounds. The planar and the cross-sectional morphology were observed by scanning electron microscopic. The dense, smooth, uniform grains are formed on the quartz glass substrates through PLD technique. The grain size of ZnS deposited by PLD is much smaller than that of CdS by conventional CBD method, which is analyzed as the main reason of detrimental cell performance. The composition of the ZnS films was also measured by X-ray fluorescence. The typical ZnS films obtained in this work are near stoichiometric and only a small amount of S-rich. The energy band gaps at different temperatures were obtained by absorption spectroscopy measurement, which increases from 3.2 eV to 3.7 eV with the increasing of the deposition temperature. ZnS has a wider energy band gap than CdS （2.4 eV）, which can enhance the blue response of the photovoltaic cells. These results show the high-quality of these substitute buffer layer materials are prepared through an all-dry technology, which can be used in the manufacture of CIGS thin film solar cells.
基金the support given by Board of Research in Nuclear Sciences,Department of Atomic Energy(India)for present work(No.2008/36/107-BRNS/4038A)
文摘Use of a buttering deposit on ferritic steel in dissimilar metal weld（DMW） joint is a common practice in nuclear plants to connect pressure vessel components（ferritic steel） to pipelines（austenitic stainless steel）.Carbon migration and metallurgical changes near fusion interface（ferritic steel–austenitic stainless steel） lead to a steeper gradient in material properties,and minimizing this gradient is the major challenge in the manufacturing of DMW joints.Inconel 82 is often deposited on ferritic steel material as buttering to reducing the gradient of physical and attaining material compatibility.Inconel 82/182 fillers are used to minimize the carbon migration,but the results are not truly adequate.In this paper,Ni–Fe alloy（chromium-free） has been used as the intermediate buffer layer in the weld buttering deposit to address the issue of carbon migration and subsequent metallurgical deterioration.The weld pads with and without buffer layers of Ni–Fe alloy have been investigated and compared in detail for metallurgical properties and carbon diffusivities.Ni–Fe buffer layer can significantly control the carbon migration which resists the metallurgical deterioration.It showed the better results in postweld heat treatment and thermally aged conditions.The buttering deposit with Ni–Fe buffer layer could be the better choice for DMW joints requirements.
基金Project supported by National 863 Programof Ministry of Science and Technology of China (2002AA306211 ,2004AA306130)
文摘NiO buffer layers were formed on a tape of Ni for making YBCO coated conductor by surface-oxidation epitaxy （SOE） process. Different oxidizing conditions such as temperature and duration were studied for Ni tapes. It is found that the texture of NiO could be affected directly by the orientation and surface of substrate. X-ray diffraction （XRD） 2-2θ scan, φ-scan, and pole figure were employed to characterize the in-plane alignment and cube texture. X-ray φ-scan shows that NiO film is formed on Ni tape with high cube texture and a typical value at the full width at half maximum （FWHM） is ≤ 7.5°. Scanning electron microscopy was used to study the surface morphology of NiO films. No crack is found and the films appear dense. Such technique is simple and of low cost with perfect reproducibility, promising for developing long tapes.
基金supported by the National Natural Science Foundation of China(No.61274063)
文摘An organic light-emitting diode （OLED） device with high efficiency and brightness is fabricated by inserting CuOJCu dual inorganic buffer layers between indium-tin-oxide （ITO） and hole-transport layer （HTL）. The CuOx/Cu buffer layer limits the operating current density obviously, while the brightness and efficiency are both enhanced greatly. The highest brightness of the optimized device is achieved to be 14 000 cd/m2 at current efficiency of 3 cd/A and bias voltage of 15 V, which is about 50% higher than that of the compared device without CuOJCu buffer layer. The highest efficiency is achieved to be 5.9 cd/A at 11.6 V with 3 400 cd/m^2, which is almost twice as high as that of the compared device.
基金supported by the Foundation of Zhejiang Educational Committee (No.Z201018276)
文摘To evaluate the influence of the ZnO buffer layer and A1 proportion on the properties of ZnO： A1 （AZO）/ZnO bi-layer films, a series of AZO/ZnO films are deposited on the quartz substrates by electron beam evaporation. The X-ray diffraction measurement shows that the crystal quality of the films is improved with the increase of the film thickness. The electrical properties of the films are investigated. The carrier concentration and Hall mobility both increase with the increase of buffer layer thickness. However, the resistivity reaches the lowest at about 50 nm-thick buffer layer. The lowest resistivity and the maximum Hall mobility are both obtained at 1 wt% Al concentration. But the optical transmittance of all the films is greater than 80% regardless of the buffer layer thickness with A1 concentration lower than 5 wt% in the visible region.
基金Project supported by the National Key Science & Technology Special Project,China(Grant No.2008ZX01002-002)the Fundamental Research Funds for the Central Universities,China(Grant No.JY10000904009)the Major Program and State Key Program of the National Natural Science Foundation of China(Grant Nos.60890191 and 60736033)
文摘In this paper we report that the GaN thin film is grown by metal-organic chemical vapour deposition on a sapphire （0001） substrate with double A1N buffer layers. The buffer layer consists of a low-temperature （LT） A1N layer and a high-temperature （HT） A1N layer that are grown at 600 ℃ and 1000 ℃, respectively. It is observed that the thickness of the LT-A1N layer drastically influences the quality of GaN thin film, and that the optimized 4.25-min-LT-A1N layer minimizes the dislocation density of GaN thin film. The reason for the improved properties is discussed in this paper.
基金supported by the National Natural Science Foundation of China (Nos.60977027 and 60825407)the Fundamental Research Funds for the Central Universities (No.2010JBZ003)the Beijing Municipal Science & Technology Commission (No.Z090803044009001)
文摘In this paper,bulk heterojunction solar cells with poly-(3-hexylthiophene)(P3HT):[6,6]-phenyl-C61-butyric-acid-methylester(PCBM) as an active layer and modified poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)(PEDOT:PSS) as a buffer layer are fabricated.The buffer layer is modified by adding 1% to 5% dimethyl sulfoxide(DMSO) into PEDOT:PSS solution before spin-coating.The conductivity of modified PEDOT:PSS and the performance of solar cells with modified PEDOT:PSS are measured.The highest conductivity of modified PEDOT:PSS with 4% DMSO can achieve 89.693 S/cm.The performance of organic solar cell with PEDOT:PSS modified by 4% DMSO is the best.The 4% DMSOmodified-PEDOT:PSS cell has a power conversion efficiency of 3.34%,V oc of 5.7 V,J sc of 14.56 mA/cm 2 and filling factor(FF) of 40.34%.
文摘The magnetic and structural properties in Co/Cu/Co sandwiches with Ni and Cr buffer layers were investigated. It was found that the coercivity in Ni layer buffered samples decreases with increasing Ni layer thickness, while that in Cr layer buffered ones increases with increasing Cr layer thickness, leading to a large difference in field sensitivity of their giant magnetoresistance (GMR) properties. X-ray diffraction and high resolution transmission electron microscope images exhibited that there is a strong fcc (111) texture in the samples with Ni buffer layer. But there are only randomly oriented potycrystalline grains in Cr buffered sandwiches. According to atomic force microscope topography, the surface roughness of Cr buffered sandwiches is smaller than that of Ni buffered ones. It is demonstrated that buffer layer influences both magnetic and structural properties in Co/Cu/Co sandwiches as well as their GMR characteristics.
