A unified breakdown model of SOI RESURF device with uniform,step,or linear drift region doping profile is firstly proposed.By the model,the electric field distribution and breakdown voltage are researched in detail fo...A unified breakdown model of SOI RESURF device with uniform,step,or linear drift region doping profile is firstly proposed.By the model,the electric field distribution and breakdown voltage are researched in detail for the step numbers from 0 to infinity.The critic electric field as the function of the geometry parameters and doping profile is derived.For the thick film device,linear doping profile can be replaced by a single or two steps doping profile in the drift region due to a considerable uniformly lateral electric field,almost ideal breakdown voltage,and simplified design and fabrication.The availability of the proposed model is verified by the good accordance among the analytical results,numerical simulations,and reported experiments.展开更多
Perfluorocyclobutane(c-C4F8) has been recently considered as a potential alternative to SF6,because of its high electro-negativity and extremely low environmental effect.However,due to its high boiling point,c-C4F8 sh...Perfluorocyclobutane(c-C4F8) has been recently considered as a potential alternative to SF6,because of its high electro-negativity and extremely low environmental effect.However,due to its high boiling point,c-C4F8 should mixed with buffer gases such as N2 or CO2 in order to avoid the liquefaction at low temperature.This paper investigates insulating properties of c-C4F8/N2 gas mixtures from two aspects including electrical strength,and Global Warming Potential(GWP).Moreover,improved electrical breakdown model of gas mixtures is founded.Breakdown temperature and breakdown electrical field in gas mixtures can be obtained from rigorous Townsend criterion expression according to gas mixtures ratio and cross section data of gas mixtures in this model.Under the condition of different gas pressure(0.1~0.4 MPa),gas mixtures ratio(0～30%),and electrode gap(2~10 mm),breakdown voltages of gas mixtures are calculated by using of this model.Insulation strength of SF6/N2 mixed gas is compared with c-C4F8/N2 mixed gas in the same conditions.Research results show that theoretical computation corresponds with experiment.If the content of c-C4F8 or SF6 in mixtures is less than 30%,insulation strength between c-C4F8/N2 and SF6/N2 is very close.Considering two indexes(breakdown voltage,GWP),it is suitable for c-C4F8 content being 15%～20% in c-C4F8/N2 gas展开更多
Based on the theoretical and experimental investigation of a thin silicon layer（TSL） with linear variable doping（LVD） and further research on the TSL LVD with a multiple step field plate（MSFP）,a breakdown voltag...Based on the theoretical and experimental investigation of a thin silicon layer（TSL） with linear variable doping（LVD） and further research on the TSL LVD with a multiple step field plate（MSFP）,a breakdown voltage（BV） model is proposed and experimentally verified in this paper.With the two-dimensional Poisson equation of the silicon on insulator（SOI） device,the lateral electric field in drift region of the thin silicon layer is assumed to be constant.For the SOI device with LVD in the thin silicon layer,the dependence of the BV on impurity concentration under the drain is investigated by an enhanced dielectric layer field（ENDIF）,from which the reduced surface field（RESURF） condition is deduced.The drain in the centre of the device has a good self-isolation effect,but the problem of the high voltage interconnection（HVI） line will become serious.The two step field plates including the source field plate and gate field plate can be adopted to shield the HVI adverse effect on the device.Based on this model,the TSL LVD SOI n-channel lateral double-diffused MOSFET（nLDMOS） with MSFP is realized.The experimental breakdown voltage（BV） and specific on-resistance（R on,sp） of the TSL LVD SOI device are 694 V and 21.3 ·mm 2 with a drift region length of 60 μm,buried oxide layer of 3 μm,and silicon layer of 0.15 μm,respectively.展开更多
This paper presents an analytical three-dimensional breakdown model of SOI lateral power devices with a circular layout. The Poisson equation is solved in cylindrical coordinates to obtain the radial surface potential...This paper presents an analytical three-dimensional breakdown model of SOI lateral power devices with a circular layout. The Poisson equation is solved in cylindrical coordinates to obtain the radial surface potential and electric field distributions for both fully- and partially-depleted dr/ft regions. The breakdown voltages for N＋N and P＋N junctions are derived and employed to investigate the impact of cathode region curvature. A modified RESURF criterion is proposed to provide a design guideline for optimizing the breakdown voltage and doping concentration in the drift region in three dimensional space. The analytical results agree well with MEDICI simulation results and experimental data from earlier publications.展开更多
A new SOI power device with multi-region high-concentration fixed charge（MHFC） is reported. The MHFC is formed through implanting Cs or I ion into the buried oxide layer（BOX）, by which the high-concentration dynam...A new SOI power device with multi-region high-concentration fixed charge（MHFC） is reported. The MHFC is formed through implanting Cs or I ion into the buried oxide layer（BOX）, by which the high-concentration dynamic electrons and holes are induced at the top and bottom interfaces of BOX. The inversion holes can enhance the vertical electric field and raise the breakdown voltage since the drain bias is mainly generated from the BOX. A model of breakdown voltage is developed, from which the optimal spacing has also been obtained. The numerical results indicate that the breakdown voltage of device proposed is increased by 287% in comparison to that of conventional LDMOS.展开更多
A novel one-dimensional（1D） analytical model is proposed for quantifying the breakdown voltage of a reduced surface field（RESURF） lateral power device fabricated on silicon on an insulator（SOI） substrate.We assu...A novel one-dimensional（1D） analytical model is proposed for quantifying the breakdown voltage of a reduced surface field（RESURF） lateral power device fabricated on silicon on an insulator（SOI） substrate.We assume that the charges in the depletion region contribute to the lateral PN junctions along the diagonal of the area shared by the lateral and vertical depletion regions.Based on the assumption,the lateral PN junction behaves as a linearly graded junction,thus resulting in a reduced surface electric field and high breakdown voltage.Using the proposed model,the breakdown voltage as a function of device parameters is investigated and compared with the numerical simulation by the TCAD tools.The analytical results are shown to be in fair agreement with the numerical results.Finally,a new RESURF criterion is derived which offers a useful scheme to optimize the structure parameters.This simple 1D model provides a clear physical insight into the RESURF effect and a new explanation on the improvement in breakdown voltage in an SOI RESURF device.展开更多
The electron energy distribution function （EEDF）, predicted by the Boltzmann equation solver BOLSIG＋ based on the two-term approximation, is introduced into the fluid model for simulating the high-power microwave ...The electron energy distribution function （EEDF）, predicted by the Boltzmann equation solver BOLSIG＋ based on the two-term approximation, is introduced into the fluid model for simulating the high-power microwave （HPM） breakdown in argon, nitrogen, and air, and its validity is examined by comparing with the results of particle-in-cell Monte Carlo collision （PIC/MCC） simulations as well as the experimental data. Numerical results show that, the breakdown time of the fluid model with the Maxwellian EEDF matches that of the PIC/MCC simulations in nitrogen; however, in argon under high pressures, the results from the Maxwellian EEDF were poor. This is due to an overestimation of the energy tail of the Maxwellian EEDF in argon breakdown. The prediction of the fluid model with the BOLSIG＋ EEDF, however, agrees very well with the PIC/MCC prediction in nitrogen and argon over a wide range of pressures. The accuracy of the fluid model with the BOLSIG＋ EEDF is also verified by the experimental results of the air breakdown.展开更多
Passivity breakdown on 436 ferritic stainless steel(FSS) has been investigated in solutions containing different concentrations of chloride at 25?C and interpreted in terms of the point defect model(PDM). The measured...Passivity breakdown on 436 ferritic stainless steel(FSS) has been investigated in solutions containing different concentrations of chloride at 25?C and interpreted in terms of the point defect model(PDM). The measured near-normal distributions of passivity breakdown potentials for 436 FSS under experimental conditions are in good agreement with the calculated results according to the PDM. The linear dependence of breakdown potential on the square root of potential scanning rate, which was described by the PDM,provides the estimation of the critical concentration of condensed vacancies at the metal/film interface,which leads to the passivity breakdown. This value is in good agreement with that calculated from the microstructure properties of the alloy substrate and the barrier layer of the passive film. This study demonstrates the validity of the PDM in describing the passivity breakdown on 436 FSS in NaCl solutions.展开更多
A novel and accurate method is proposed to extract the intrinsic elements of the GaN high-electron-mobility transistor（HEMT） switch.The new extraction method is verified by comparing the simulated S-parameters with ...A novel and accurate method is proposed to extract the intrinsic elements of the GaN high-electron-mobility transistor（HEMT） switch.The new extraction method is verified by comparing the simulated S-parameters with the measured data over the 5-40 GHz frequency range.The percentage errors E（ij） within 3.83% show the great agreement between the simulated S-parameters and the measured data.展开更多
The energy transmission of the long microwave pulse for the frequency of 2.45 GHz and 5.8 GHz is studied by using the electron fluid model, where the rate coefficients are deduced from the Boltzmann equation solver na...The energy transmission of the long microwave pulse for the frequency of 2.45 GHz and 5.8 GHz is studied by using the electron fluid model, where the rate coefficients are deduced from the Boltzmann equation solver named BOLSIG＋. The breakdown thresholds for different air pressures and incident pulse parameters are predicted, which show good agreement with the experimental data. Below the breakdown threshold, the transmitted pulse energy is proportional to the square of the incident electric field amplitude. When the incident electric field amplitude higher than the breakdown threshold increases,the transmitted pulse energy decreases monotonously at a high air pressure, while at a low air pressure it first decreases and then increases. We also compare the pulse energy transmission for the frequency of 2.45 GHz with the case of 5.8 GHz.展开更多
Microwave breakdown at atmospheric pressure causes the formation of a discrete plasma structure. The onedimensional fluid model coupling Maxwell equations with plasma fluid equations is used to study the effect of the...Microwave breakdown at atmospheric pressure causes the formation of a discrete plasma structure. The onedimensional fluid model coupling Maxwell equations with plasma fluid equations is used to study the effect of the microwave frequency on the formation of air plasma. Simulation results show that, the filamentary plasma array propagating toward the microwave source is formed at different microwave frequencies. As the microwave frequency decreases, the ratio of the distance between two adjacent plasma filaments to the corresponding wavelength remains almost unchanged（on the order of 1/4）, while the plasma front propagates more slowly due to the increase in the formation time of the new plasma filament.展开更多
Laser-induced breakdown spectroscopy(LIBS) is a new technology suitable for classification of various materials. This paper proposes a hybrid classification scheme for coal, municipal sludge and biomass by using LIBS ...Laser-induced breakdown spectroscopy(LIBS) is a new technology suitable for classification of various materials. This paper proposes a hybrid classification scheme for coal, municipal sludge and biomass by using LIBS combined with K-means and support vector machine(SVM)algorithm. In the study, 10 samples were classified in 3 groups without supervision by K-means clustering, then a further supervised classification of 6 kinds of biomass samples by SVM was carried out. The results show that the comprehensive accuracy of the hybrid classification model is over 98%. In comparison with the single SVM classification model, the hybrid classification model can save 58.92% of operation time while guaranteeing the accuracy. The results demonstrate that the hybrid classification model is able to make an efficient, fast and accurate classification of coal, municipal sludge and biomass, furthermore, it is precise for the detection of various kinds of biomass fuel.展开更多
A 1-D fluid model for homogeneous dielectric barrier discharge （DBD） in helium is presented, aimed at unraveling the spatial-temporal characteristics of two basic discharge regimes： single-breakdown and multi-break...A 1-D fluid model for homogeneous dielectric barrier discharge （DBD） in helium is presented, aimed at unraveling the spatial-temporal characteristics of two basic discharge regimes： single-breakdown and multi-breakdown discharges. Discharge currents, gap voltages, charge densities, electron temperature and electric field profiles of the two regimes make it clear that these two regimes are qualitatively different. It is found that the multi-breakdown discharge has a more homogeneous flux on dielectrics compared to the single-breakdown discharge.展开更多
The air breakdown is easily caused by the high-power microwave, which can have two mutually orthogonal and heterophase electric field components. For this case, the electron momentum conservation equation is employed ...The air breakdown is easily caused by the high-power microwave, which can have two mutually orthogonal and heterophase electric field components. For this case, the electron momentum conservation equation is employed to deduce the electric field power and effective electric field for heating electrons. Then the formula of the electric field power is introduced into the global model to simulate the air breakdown. The breakdown prediction from the global model agrees well with the experimental data. Simulation results show that the electron temperature is sensitive to the phase difference between the two electron field components, while the latter can affect obviously the growth of the electron density at low electron temperature amplitudes. The ionization of nitrogen and oxygen induces the growth of electron density, and the density loss due to the dissociative attachment and dissociative recombination is obvious only at low electron temperatures.展开更多
The fluid model is proposed to investigate the gas breakdown driven by a short-pulse（such as a Gaussian pulse） highpower microwave at high pressures.However,the fluid model requires specification of the electron ene...The fluid model is proposed to investigate the gas breakdown driven by a short-pulse（such as a Gaussian pulse） highpower microwave at high pressures.However,the fluid model requires specification of the electron energy distribution function（EEDF）;the common assumption of a Maxwellian EEDF can result in the inaccurate breakdown prediction when the electrons are not in equilibrium.We confirm that the influence of the incident pulse shape on the EEDF is tiny at high pressures by using the particle-in-cell Monte Carlo collision（PIC-MCC） model.As a result,the EEDF for a rectangular microwave pulse directly derived from the Boltzmann equation solver Bolsig＋ is introduced into the fluid model for predicting the breakdown threshold of the non-rectangular pulse over a wide range of pressures,and the obtained results are very well matched with those of the PIC-MCC simulations.The time evolution of a non-rectangular pulse breakdown in gas,obtained by the fluid model with the EEDF from Bolsig＋,is presented and analyzed at different pressures.In addition,the effect of the incident pulse shape on the gas breakdown is discussed.展开更多
It is well known that work done on a material by conservative forces (electrical, mechanical, chemical) will increase the Gibbs Potential of the material. The increase in Gibbs Potential can be stored in the material ...It is well known that work done on a material by conservative forces (electrical, mechanical, chemical) will increase the Gibbs Potential of the material. The increase in Gibbs Potential can be stored in the material and is free/available to do work at some later time. However, it will be shown in this paper that while in this state of higher Gibbs potential, the material is metastable and the material will degrade spontaneously/naturally with time in an effort to reach a lower Gibbs Potential. A generalized Gibbs Potential Model is developed herein to better understand its impact on a materials degradation rate. Special attention will be given to dielectrics degradation.展开更多
We have demonstrated the first carrier density model for AlGaN channel with AlN buffer using spontaneous and piezoelectric polarization comparison with experimental and theoretical results. From the results we proved ...We have demonstrated the first carrier density model for AlGaN channel with AlN buffer using spontaneous and piezoelectric polarization comparison with experimental and theoretical results. From the results we proved that the formation of 2DEG in undoped structure relied both on spontaneous and piezoelectric polarization. The electron distribution of Al concentration (0 < x < 0.5) was measured for both AlGaN channel and barrier. Barrier thickness assumed between 20 and 25 nm for validating the experimental results. The carrier concentration was observed at the specific interface of the N- and Ga-face by assuming x1, x2 = 0. The model results are verified with previously reported experimental data.展开更多
文摘A unified breakdown model of SOI RESURF device with uniform,step,or linear drift region doping profile is firstly proposed.By the model,the electric field distribution and breakdown voltage are researched in detail for the step numbers from 0 to infinity.The critic electric field as the function of the geometry parameters and doping profile is derived.For the thick film device,linear doping profile can be replaced by a single or two steps doping profile in the drift region due to a considerable uniformly lateral electric field,almost ideal breakdown voltage,and simplified design and fabrication.The availability of the proposed model is verified by the good accordance among the analytical results,numerical simulations,and reported experiments.
基金Project Supported by the National Natural Science Foundation of China(No.:50777041)
文摘Perfluorocyclobutane(c-C4F8) has been recently considered as a potential alternative to SF6,because of its high electro-negativity and extremely low environmental effect.However,due to its high boiling point,c-C4F8 should mixed with buffer gases such as N2 or CO2 in order to avoid the liquefaction at low temperature.This paper investigates insulating properties of c-C4F8/N2 gas mixtures from two aspects including electrical strength,and Global Warming Potential(GWP).Moreover,improved electrical breakdown model of gas mixtures is founded.Breakdown temperature and breakdown electrical field in gas mixtures can be obtained from rigorous Townsend criterion expression according to gas mixtures ratio and cross section data of gas mixtures in this model.Under the condition of different gas pressure(0.1~0.4 MPa),gas mixtures ratio(0～30%),and electrode gap(2~10 mm),breakdown voltages of gas mixtures are calculated by using of this model.Insulation strength of SF6/N2 mixed gas is compared with c-C4F8/N2 mixed gas in the same conditions.Research results show that theoretical computation corresponds with experiment.If the content of c-C4F8 or SF6 in mixtures is less than 30%,insulation strength between c-C4F8/N2 and SF6/N2 is very close.Considering two indexes(breakdown voltage,GWP),it is suitable for c-C4F8 content being 15%～20% in c-C4F8/N2 gas
基金Project supported partially by the National Natural Science Foundation of China (Grant Nos. 60906038 and 61076082)
文摘Based on the theoretical and experimental investigation of a thin silicon layer（TSL） with linear variable doping（LVD） and further research on the TSL LVD with a multiple step field plate（MSFP）,a breakdown voltage（BV） model is proposed and experimentally verified in this paper.With the two-dimensional Poisson equation of the silicon on insulator（SOI） device,the lateral electric field in drift region of the thin silicon layer is assumed to be constant.For the SOI device with LVD in the thin silicon layer,the dependence of the BV on impurity concentration under the drain is investigated by an enhanced dielectric layer field（ENDIF）,from which the reduced surface field（RESURF） condition is deduced.The drain in the centre of the device has a good self-isolation effect,but the problem of the high voltage interconnection（HVI） line will become serious.The two step field plates including the source field plate and gate field plate can be adopted to shield the HVI adverse effect on the device.Based on this model,the TSL LVD SOI n-channel lateral double-diffused MOSFET（nLDMOS） with MSFP is realized.The experimental breakdown voltage（BV） and specific on-resistance（R on,sp） of the TSL LVD SOI device are 694 V and 21.3 ·mm 2 with a drift region length of 60 μm,buried oxide layer of 3 μm,and silicon layer of 0.15 μm,respectively.
基金Project supported by the National Natural Science Foundation of China (No.60806027)the China Postdoctoral Science Foundation (No.20070411013)+1 种基金the Natural Science Foundation of Jiangsu Province,China (No.BK2007605)the State Key Laboratory of Electronic Thin Films and Integrated Devices (No.KF2007001)
文摘This paper presents an analytical three-dimensional breakdown model of SOI lateral power devices with a circular layout. The Poisson equation is solved in cylindrical coordinates to obtain the radial surface potential and electric field distributions for both fully- and partially-depleted dr/ft regions. The breakdown voltages for N＋N and P＋N junctions are derived and employed to investigate the impact of cathode region curvature. A modified RESURF criterion is proposed to provide a design guideline for optimizing the breakdown voltage and doping concentration in the drift region in three dimensional space. The analytical results agree well with MEDICI simulation results and experimental data from earlier publications.
基金supported by the State Key Laboratory of Electronic Thin Films and Integrated Devices of China(Grant No.KFJJ201205)the Department of Education Project of Guangxi Province,China(Grant No.201202ZD041)+1 种基金the Postdoctoral Science Foundation Project of China(Grant Nos.2012M521127 and2013T60566)the National Natural Science Foundation of China(Grant Nos.61361011,61274077,and 61464003)
文摘A new SOI power device with multi-region high-concentration fixed charge（MHFC） is reported. The MHFC is formed through implanting Cs or I ion into the buried oxide layer（BOX）, by which the high-concentration dynamic electrons and holes are induced at the top and bottom interfaces of BOX. The inversion holes can enhance the vertical electric field and raise the breakdown voltage since the drain bias is mainly generated from the BOX. A model of breakdown voltage is developed, from which the optimal spacing has also been obtained. The numerical results indicate that the breakdown voltage of device proposed is increased by 287% in comparison to that of conventional LDMOS.
基金supported by the National Natural Science Foundation of China(Grant No.61076073)the Specialized Research Fund for the Doctoral Program of Higher Education of China(Grant No.20133223110003)
文摘A novel one-dimensional（1D） analytical model is proposed for quantifying the breakdown voltage of a reduced surface field（RESURF） lateral power device fabricated on silicon on an insulator（SOI） substrate.We assume that the charges in the depletion region contribute to the lateral PN junctions along the diagonal of the area shared by the lateral and vertical depletion regions.Based on the assumption,the lateral PN junction behaves as a linearly graded junction,thus resulting in a reduced surface electric field and high breakdown voltage.Using the proposed model,the breakdown voltage as a function of device parameters is investigated and compared with the numerical simulation by the TCAD tools.The analytical results are shown to be in fair agreement with the numerical results.Finally,a new RESURF criterion is derived which offers a useful scheme to optimize the structure parameters.This simple 1D model provides a clear physical insight into the RESURF effect and a new explanation on the improvement in breakdown voltage in an SOI RESURF device.
基金Project supported by the National Basic Research Program of China(Grant No.2013CB328904)the Fundamental Research Funds for the Central Universities,Chinathe Open Research Fund of Key Laboratory of Cognitive Radio and Information Processing of Ministry of Education of China
文摘The electron energy distribution function （EEDF）, predicted by the Boltzmann equation solver BOLSIG＋ based on the two-term approximation, is introduced into the fluid model for simulating the high-power microwave （HPM） breakdown in argon, nitrogen, and air, and its validity is examined by comparing with the results of particle-in-cell Monte Carlo collision （PIC/MCC） simulations as well as the experimental data. Numerical results show that, the breakdown time of the fluid model with the Maxwellian EEDF matches that of the PIC/MCC simulations in nitrogen; however, in argon under high pressures, the results from the Maxwellian EEDF were poor. This is due to an overestimation of the energy tail of the Maxwellian EEDF in argon breakdown. The prediction of the fluid model with the BOLSIG＋ EEDF, however, agrees very well with the PIC/MCC prediction in nitrogen and argon over a wide range of pressures. The accuracy of the fluid model with the BOLSIG＋ EEDF is also verified by the experimental results of the air breakdown.
基金supported by the National Natural Science Foundation of China (Grants No.51501041 and No.51671059)
文摘Passivity breakdown on 436 ferritic stainless steel(FSS) has been investigated in solutions containing different concentrations of chloride at 25?C and interpreted in terms of the point defect model(PDM). The measured near-normal distributions of passivity breakdown potentials for 436 FSS under experimental conditions are in good agreement with the calculated results according to the PDM. The linear dependence of breakdown potential on the square root of potential scanning rate, which was described by the PDM,provides the estimation of the critical concentration of condensed vacancies at the metal/film interface,which leads to the passivity breakdown. This value is in good agreement with that calculated from the microstructure properties of the alloy substrate and the barrier layer of the passive film. This study demonstrates the validity of the PDM in describing the passivity breakdown on 436 FSS in NaCl solutions.
文摘A novel and accurate method is proposed to extract the intrinsic elements of the GaN high-electron-mobility transistor（HEMT） switch.The new extraction method is verified by comparing the simulated S-parameters with the measured data over the 5-40 GHz frequency range.The percentage errors E（ij） within 3.83% show the great agreement between the simulated S-parameters and the measured data.
基金Project supported by the National Natural Science Foundation of China(Grant No.61501358)the Fundamental Research Funds for the Central Universities,China
文摘The energy transmission of the long microwave pulse for the frequency of 2.45 GHz and 5.8 GHz is studied by using the electron fluid model, where the rate coefficients are deduced from the Boltzmann equation solver named BOLSIG＋. The breakdown thresholds for different air pressures and incident pulse parameters are predicted, which show good agreement with the experimental data. Below the breakdown threshold, the transmitted pulse energy is proportional to the square of the incident electric field amplitude. When the incident electric field amplitude higher than the breakdown threshold increases,the transmitted pulse energy decreases monotonously at a high air pressure, while at a low air pressure it first decreases and then increases. We also compare the pulse energy transmission for the frequency of 2.45 GHz with the case of 5.8 GHz.
基金Project supported by the Fundamental Research Funds for the Central Universities,Chinathe National Natural Science Foundation of China(Grant No.61501358)
文摘Microwave breakdown at atmospheric pressure causes the formation of a discrete plasma structure. The onedimensional fluid model coupling Maxwell equations with plasma fluid equations is used to study the effect of the microwave frequency on the formation of air plasma. Simulation results show that, the filamentary plasma array propagating toward the microwave source is formed at different microwave frequencies. As the microwave frequency decreases, the ratio of the distance between two adjacent plasma filaments to the corresponding wavelength remains almost unchanged（on the order of 1/4）, while the plasma front propagates more slowly due to the increase in the formation time of the new plasma filament.
基金supported by National Natural Science Foundation of China (No. 51 676 073)the Guangdong Province Train High-Level Personnel Special Support Program (No. 2014TQ01N334)+1 种基金the Science and Technology Project of Guangdong Province (No. 2015A020215005)the Guangdong Province Key Laboratory of Efficient and Clean Energy Utilization (No. 2013A061401005)
文摘Laser-induced breakdown spectroscopy(LIBS) is a new technology suitable for classification of various materials. This paper proposes a hybrid classification scheme for coal, municipal sludge and biomass by using LIBS combined with K-means and support vector machine(SVM)algorithm. In the study, 10 samples were classified in 3 groups without supervision by K-means clustering, then a further supervised classification of 6 kinds of biomass samples by SVM was carried out. The results show that the comprehensive accuracy of the hybrid classification model is over 98%. In comparison with the single SVM classification model, the hybrid classification model can save 58.92% of operation time while guaranteeing the accuracy. The results demonstrate that the hybrid classification model is able to make an efficient, fast and accurate classification of coal, municipal sludge and biomass, furthermore, it is precise for the detection of various kinds of biomass fuel.
基金supported by National Natural Science Foundation of China(No.50907053)State Key Laboratory of Electrical Insulation and Power Equipment of China(EIPE10305)
文摘A 1-D fluid model for homogeneous dielectric barrier discharge （DBD） in helium is presented, aimed at unraveling the spatial-temporal characteristics of two basic discharge regimes： single-breakdown and multi-breakdown discharges. Discharge currents, gap voltages, charge densities, electron temperature and electric field profiles of the two regimes make it clear that these two regimes are qualitatively different. It is found that the multi-breakdown discharge has a more homogeneous flux on dielectrics compared to the single-breakdown discharge.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61501358,61431010,and 61627901)the Fundamental Research Funds for the Central Universities,China
文摘The air breakdown is easily caused by the high-power microwave, which can have two mutually orthogonal and heterophase electric field components. For this case, the electron momentum conservation equation is employed to deduce the electric field power and effective electric field for heating electrons. Then the formula of the electric field power is introduced into the global model to simulate the air breakdown. The breakdown prediction from the global model agrees well with the experimental data. Simulation results show that the electron temperature is sensitive to the phase difference between the two electron field components, while the latter can affect obviously the growth of the electron density at low electron temperature amplitudes. The ionization of nitrogen and oxygen induces the growth of electron density, and the density loss due to the dissociative attachment and dissociative recombination is obvious only at low electron temperatures.
基金supported by the National Basic Research Program of China(Grant No.2013CB328904)the NSAF of China(Grant No.U1330109)2012 Doctoral Innovation Funds of Southwest Jiaotong University
文摘The fluid model is proposed to investigate the gas breakdown driven by a short-pulse（such as a Gaussian pulse） highpower microwave at high pressures.However,the fluid model requires specification of the electron energy distribution function（EEDF）;the common assumption of a Maxwellian EEDF can result in the inaccurate breakdown prediction when the electrons are not in equilibrium.We confirm that the influence of the incident pulse shape on the EEDF is tiny at high pressures by using the particle-in-cell Monte Carlo collision（PIC-MCC） model.As a result,the EEDF for a rectangular microwave pulse directly derived from the Boltzmann equation solver Bolsig＋ is introduced into the fluid model for predicting the breakdown threshold of the non-rectangular pulse over a wide range of pressures,and the obtained results are very well matched with those of the PIC-MCC simulations.The time evolution of a non-rectangular pulse breakdown in gas,obtained by the fluid model with the EEDF from Bolsig＋,is presented and analyzed at different pressures.In addition,the effect of the incident pulse shape on the gas breakdown is discussed.
文摘It is well known that work done on a material by conservative forces (electrical, mechanical, chemical) will increase the Gibbs Potential of the material. The increase in Gibbs Potential can be stored in the material and is free/available to do work at some later time. However, it will be shown in this paper that while in this state of higher Gibbs potential, the material is metastable and the material will degrade spontaneously/naturally with time in an effort to reach a lower Gibbs Potential. A generalized Gibbs Potential Model is developed herein to better understand its impact on a materials degradation rate. Special attention will be given to dielectrics degradation.
文摘We have demonstrated the first carrier density model for AlGaN channel with AlN buffer using spontaneous and piezoelectric polarization comparison with experimental and theoretical results. From the results we proved that the formation of 2DEG in undoped structure relied both on spontaneous and piezoelectric polarization. The electron distribution of Al concentration (0 < x < 0.5) was measured for both AlGaN channel and barrier. Barrier thickness assumed between 20 and 25 nm for validating the experimental results. The carrier concentration was observed at the specific interface of the N- and Ga-face by assuming x1, x2 = 0. The model results are verified with previously reported experimental data.
