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Body Fuzzy Pattern Recognition in Woman Basic Block Design
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作者 谢红 张渭源 《Journal of Donghua University(English Edition)》 EI CAS 2003年第2期59-62,共4页
Basic block is the foundation of clothing construction design because it is the media between body and clothes and the fitness of clothes should be based on the accuracy of basic block. That needs us to recognize body... Basic block is the foundation of clothing construction design because it is the media between body and clothes and the fitness of clothes should be based on the accuracy of basic block. That needs us to recognize body not to record it. This paper reports the Algorithm of woman body fuzzy pattern recognition. It is organized in three sections:(i) extracting woman body feature; (ii) establishing membership functions of feature indexes;(iii) presenting an Algorithm for woman body fuzzy pattern recognition by example. 展开更多
关键词 basic block FUZZY Pattern Recognition
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Women's Basic Block Based on the Body Recognition
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作者 谢红 张渭源 《Journal of Donghua University(English Edition)》 EI CAS 2003年第3期141-143,共3页
Body analysis is an important method to clothing construction design. It not only gets the measurement of body, but also analyze the style of body shape. We have discussed the method of woman body fuzzy recognition in... Body analysis is an important method to clothing construction design. It not only gets the measurement of body, but also analyze the style of body shape. We have discussed the method of woman body fuzzy recognition in another paper and from that we divide woman bodies into thirty-six groups. In each group,bodies have one kind of basic block and there is difference between any two kinds. This paper puts forward thirty-six basic block modes based on various woman bodies. 展开更多
关键词 body analysis basic block feature index
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MICROTHREAD BASED (MTB) COARSE GRAINED FAULT TOLERANCE SUPERSCALAR PROCESSOR ARCHITECTURE 被引量:3
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作者 Fu Zhongchuan Chen Hongsong Cui Gang 《Journal of Electronics(China)》 2006年第3期461-466,共6页
Fault tolerance in microprocessor systems has become a popular topic of architecture research. Much work has been done at different levels to accomplish reliability against soft errors, and some fault tolerance archit... Fault tolerance in microprocessor systems has become a popular topic of architecture research. Much work has been done at different levels to accomplish reliability against soft errors, and some fault tolerance architectures have been proposed. But little attention is paid to the thread level superscalar fault tolerance. This letter introduces microthread concept into superscalar processor fault tolerance domain, and puts forward a novel fault tolerance architecture, namely, MicroThread Based (MTB) coarse grained transient fault tolerance superscalar processor architecture, then discusses some detailed implementations. 展开更多
关键词 Microthread basic block Coarse grained fault tolerance Superscalar processor
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K_(2)Pb(H_(2)C_(3)N_(3)O_(3))4(H_(2)O)_(4):a potential UV nonlinear optical material with large birefringence
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作者 Yan Chen Chunli Hu +1 位作者 Zhi Fang Jianggao Mao 《Inorganic Chemistry Frontiers》 2021年第14期3547-3555,共9页
Cyanurate motifs are emerging functional basic blocks(FBBs)for nonlinear optical(NLO)materials and birefringent materials.Herein,we report two new potassium lead(II)hydroisocyanurates,namely,K_(2)Pb(H_(2)C_(3)N_(3)O_(... Cyanurate motifs are emerging functional basic blocks(FBBs)for nonlinear optical(NLO)materials and birefringent materials.Herein,we report two new potassium lead(II)hydroisocyanurates,namely,K_(2)Pb(H_(2)C_(3)N_(3)O_(3))_(4)(H_(2)O)_(4)(I)and K_(3)Pb(H_(2)C_(3)N_(3)O_(3))_(5)(H_(2)O)_(6)(II).I and II belong to acentric Cm and centric C2/m,respectively.Compound I features a novel 3D network formed by 2D[K_(2)PbO_(8)(H_(2)O)_(4)]1^(2−)anionic layers interconnected by(H_(2)C_(3)N_(3)O_(3))^(−)anions.The 2D[K_(2)PbO_(8)(H_(2)O)_(4)]^(12−)anionic layer is composed of 1D chains of edge-sharing K(1)O_(6)and K(2)O_(8)being further interconnected by 8-coordinated Pb^(2+)ions.Compound II exhibits a characteristic 3D framework based on 2D[K_(3)PbO_(11)(H_(2)O)_(6)]^(17−)anionic layers interlinked through(H_(2)C_(3)N_(3)O_(3))^(−)groups,and the 2D[K_(3)PbO_(11)(H_(2)O)_(6)]^(17−)anionic layer is based on K-O/H_(2)O chains bridged by Pb^(2+)ions.Powder second harmonic generation(SHG)measurements of I revealed a moderate SHG response of approximately 2.6×KDP with a type I phase-matching behavior under 1064 nm laser radiation.Theoretical calculations of I and II revealed their birefringence to be 0.325 and 0.193@532 nm,respectively.Their impressive optical properties mainly stem from stereochemically active lone pair(SCALP)Pb^(2+)cations and the planarπ-conjugated(H_(2)C_(3)N_(3)O_(3))^(−)groups. 展开更多
关键词 cyanurate motifs powder second harmonic generation functional basic blocks fbbs UV nonlinear optical materials potassium lead ii hydroisocyanurates d network functional basic blocks birefringence
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EFFECT OF LOCAL BASIC FLOW STRUCTURE PATTERN IN FORMATION OF BLOCKING HIGHS
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作者 罗哲贤 《Acta meteorologica Sinica》 SCIE 1990年第3期354-360,共7页
The effect of local basic flow structure pattern(BFSP)on a blocking high formation is investigated within the framework of forced dissipation KDV dynamics.The zonal and meridional positions of the high's center ex... The effect of local basic flow structure pattern(BFSP)on a blocking high formation is investigated within the framework of forced dissipation KDV dynamics.The zonal and meridional positions of the high's center excited by a heat source depend on the BFSP selected. 展开更多
关键词 EFFECT OF LOCAL basic FLOW STRUCTURE PATTERN IN FORMATION OF BLOCKING HIGHS BFI
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The Bipolar Field-Effect Transistor:XⅢ. Physical Realizations of the Transistor and Circuits(One-Two-MOS-Gates on Thin-Thick Pure-Impure Base)
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作者 薩支唐 揭斌斌 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2009年第2期1-12,共12页
This paper reports the physical realization of the Bipolar Field-Effect Transistor (BiFET) and its onetransistor basic building block circuits. Examples are given for the one and two MOS gates on thin and thick, pur... This paper reports the physical realization of the Bipolar Field-Effect Transistor (BiFET) and its onetransistor basic building block circuits. Examples are given for the one and two MOS gates on thin and thick, pure and impure base, with electron and hole contacts, and the corresponding theoretical current-voltage characteristics previously computed by us, without generation-recombination-trapping-tunneling of electrons and holes. These examples include the one-MOS-gate on semi-infinite thick impure base transistor (the bulk transistor) and the impurethin-base Silicon-on-Insulator (SOI) transistor and the two-MOS-gates on thin base transistors (the FinFET and the Thin Film Transistor TFF). Figures are given with the cross-section views containing the electron and hole concentration and current density distributions and trajectories and the corresponding DC current-voltage characteristics. 展开更多
关键词 bipolar field-effect transistor theory electron and hole surface and volume channels electron and hole contacts bulk SOI TFT FinFET one-transistor basic building block circuits
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