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N:ZnO/MoS_(2)-heterostructured flexible synaptic devices enabling optoelectronic co-modulation for robust artificial visual systems 被引量:1
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作者 Lei Xu Wenxiao Wang +6 位作者 Yang Li Yonghui Lin Wenjing Yue Kai Qian Qinglei Guo Jeonghyun Kim Guozhen Shen 《Nano Research》 SCIE EI CSCD 2024年第3期1902-1912,共11页
With the merits of non-contact,highly efficient,and parallel computing,optoelectronic synaptic devices combining sensing and memory in a single unit are promising for constructing neuromorphic computing and artificial... With the merits of non-contact,highly efficient,and parallel computing,optoelectronic synaptic devices combining sensing and memory in a single unit are promising for constructing neuromorphic computing and artificial visual chip.Based on this,a N:ZnO/MoS_(2)-heterostructured flexible optoelectronic synaptic device is developed in this work,and its capability in mimicking the synaptic behaviors is systemically investigated under the electrical and light signals.Versatile synaptic functions,including synaptic plasticity,long-term/short-term memory,and learning-forgetting-relearning property,have been achieved in this synaptic device.Further,an artificial visual memory system integrating sense and memory is emulated with the device array,and the visual memory behavior can be regulated by varying the light parameters.Moreover,the optoelectronic co-modulation behavior is verified by applying mixed electric and light signals to the array.In detail,a transient recovery property is discovered when the electric signals are applied in synergy during the decay of the light response,of which property facilitates the development of robust artificial visual systems.Furthermore,by superimposing electrical signals during the light response process,a differentiated response of the array is achieved,which can be used as a proof of concept for the color perception of the artificial visual system. 展开更多
关键词 flexible synaptic device synaptic plasticity optoelectronic synapse robust visual memory optoelectronic co-modulation artificial visual system
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Recent advances in optoelectronic synapses:from advanced materials to neuromorphic applications
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作者 Fengmei Su Zongyao Wang +1 位作者 Jiawei Wan Dan Wang 《Rare Metals》 2025年第10期6807-6838,共32页
Inspired by the visual neurons of biological systems,optoelectronic synaptic devices integrate photoresponsive semiconductor materials to convert light into electrical signals,enabling biomimetic visual perception sys... Inspired by the visual neurons of biological systems,optoelectronic synaptic devices integrate photoresponsive semiconductor materials to convert light into electrical signals,enabling biomimetic visual perception systems.Achieving memory retention and intelligent perceptual functions continues to pose a major hurdle in the advancement of neuromorphic artificial synapse devices.This review begins with an exploration of biological neural synapses,analyzing the fundamental characteristics and structures of biomimetic optoelectronic synapses.It then delves into the design of device and material structures to achieve postsynaptic current and memory behavior,elucidating their underlying mechanisms.Furthermore,the latest application scenarios of these devices are summarized,highlighting the opportunities and challenges in their future development.This review aims to provide a comprehensive understanding of the advancements in optoelectronic synapses,from material innovations to neuromorphic applications,paving the way for next-generation artificial visual systems and neuromorphic computing. 展开更多
关键词 Optoelectronic synapses artificial visual system Neuromorphic computing Fading memory artificial sensory system
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Large-scale high uniform optoelectronic synapses array for artificial visual neural network
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作者 Fanqing Zhang Chunyang Li +6 位作者 Zhicheng Chen Haiqiu Tan Zhongyi Li Chengzhai Lv Shuai Xiao Lining Wu Jing Zhao 《Microsystems & Nanoengineering》 2025年第1期247-256,共10页
Recently,the biologically inspired intelligent artificial visual neural system has aroused enormous interest.However,there are still significant obstacles in pursuing large-scale parallel and efficient visual memory a... Recently,the biologically inspired intelligent artificial visual neural system has aroused enormous interest.However,there are still significant obstacles in pursuing large-scale parallel and efficient visual memory and recognition.In this study,we demonstrate a 28×28 synaptic devices array for the artificial visual neuromorphic system,within the size of 0.7×0.7 cm 2,which integrates sensing,memory,and processing functions.The highly uniform floating-gate synaptic transistors array were constructed by the wafer-scale grown monolayer molybdenum disulfide with Au nanoparticles(NPs)acting as the electrons capture layers.Various synaptic plasticity behaviors have been achieved owing to the switchable electronic storage performance.The excellent optical/electrical coordination capabilities were implemented by paralleled processing both the optical and electrical signals the synaptic array of 784 devices,enabling to realize the badges and letters writing and erasing process.Finally,the established artificial visual convolutional neural network(CNN)through optical/electrical signal modulation can reach the high digit recognition accuracy of 96.5%.Therefore,our results provide a feasible route for future large-scale integrated artificial visual neuromorphic system. 展开更多
关键词 optoelectronic synapses monolayer molybdenum disulfide artificial visual neural system convolutional neural network artificial visual neuromorphic systemwithin artificial visual neural network floating gate transistors synaptic plasticity
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Tailoring Classical Conditioning Behavior in TiO_(2) Nanowires:ZnO QDs-Based Optoelectronic Memristors for Neuromorphic Hardware 被引量:1
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作者 Wenxiao Wang Yaqi Wang +5 位作者 Feifei Yin Hongsen Niu Young-Kee Shin Yang Li Eun-Seong Kim Nam-Young Kim 《Nano-Micro Letters》 SCIE EI CAS CSCD 2024年第7期265-280,共16页
Neuromorphic hardware equipped with associative learn-ing capabilities presents fascinating applications in the next generation of artificial intelligence.However,research into synaptic devices exhibiting complex asso... Neuromorphic hardware equipped with associative learn-ing capabilities presents fascinating applications in the next generation of artificial intelligence.However,research into synaptic devices exhibiting complex associative learning behaviors is still nascent.Here,an optoelec-tronic memristor based on Ag/TiO_(2) Nanowires:ZnO Quantum dots/FTO was proposed and constructed to emulate the biological associative learning behaviors.Effective implementation of synaptic behaviors,including long and short-term plasticity,and learning-forgetting-relearning behaviors,were achieved in the device through the application of light and electrical stimuli.Leveraging the optoelectronic co-modulated characteristics,a simulation of neuromorphic computing was conducted,resulting in a handwriting digit recognition accuracy of 88.9%.Furthermore,a 3×7 memristor array was constructed,confirming its application in artificial visual memory.Most importantly,complex biological associative learning behaviors were emulated by mapping the light and electrical stimuli into conditioned and unconditioned stimuli,respectively.After training through associative pairs,reflexes could be triggered solely using light stimuli.Comprehen-sively,under specific optoelectronic signal applications,the four features of classical conditioning,namely acquisition,extinction,recovery,and generalization,were elegantly emulated.This work provides an optoelectronic memristor with associative behavior capabilities,offering a pathway for advancing brain-machine interfaces,autonomous robots,and machine self-learning in the future. 展开更多
关键词 artificial intelligence Classical conditioning Neuromorphic computing artificial visual memory Optoelectronic memristors ZnO Quantum dots
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An oxide-based heterojunction optoelectronic synaptic device with wideband and rapid response performance
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作者 Chunmei Li Jinyong Wang +9 位作者 Dongyang Li Nasir Ilyas Zhiqiang Yang Kexin Chen Peng Gu Xiangdong Jiang Deen Gu Fucai Liu Yadong Jiang Wei Li 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2022年第28期159-167,共9页
With the rapid development of science and technology,the emergence of new application scenarios,such as robots,driverless vehicles and smart city,puts forward high requirements for artificial visual systems.Optoelectr... With the rapid development of science and technology,the emergence of new application scenarios,such as robots,driverless vehicles and smart city,puts forward high requirements for artificial visual systems.Optoelectronic synaptic devices have attracted much attention due to their advantages in sensing,memory and computing integration.In this work,via band structure engineering and heterostructure designing,a heterojunction optoelectronic synaptic device based on Cu doped with n-type SrTiO_(3)(Cu:STO)film combined with p-type CuAlO_(2)(CAO)thin film was fabricated.It is found surprisingly that the optoelectronic device based on Cu:STO/CAO p-n heterojunction exhibits a rapid response of 2 ms,and that it has a wideband response from visible to near-infrared(NIR)region.Additionally,a series of important synaptic functions,including excitatory postsynaptic current(EPSC),paired-pulse facilitation(PPF),shortterm potentiation(STP)to long-term potentiation(LTP)transition,learning experience behavior and image sharpening,have been successfully simulated on the device.More importantly,the performance of the device remains still stable and reliable after several months which were stored at room temperature and atmospheric pressure.Based on these advantages,the optoelectronic synaptic devices demonstrated here provide great potential in the new generation of artificial visual systems. 展开更多
关键词 Cu:STO/CAO heterojunction Optoelectronic synaptic devices Vis to NIR wideband Rapid response artificial visual system
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