This paper introduces a high-precision bandgap reference(BGR)designed for battery management systems(BMS),fea-turing an ultra-low temperature coefficient(TC)and line sensitivity(LS).The BGR employs a current-mode sche...This paper introduces a high-precision bandgap reference(BGR)designed for battery management systems(BMS),fea-turing an ultra-low temperature coefficient(TC)and line sensitivity(LS).The BGR employs a current-mode scheme with chopped op-amps and internal clock generators to eliminate op-amp offset.A low dropout regulator(LDO)and a pre-regula-tor enhance output driving and LS,respectively.Curvature compensation enhances the TC by addressing higher-order nonlinear-ity.These approaches,effective near room temperature,employs trimming at both 20 and 60°C.When combined with fixed cur-vature correction currents,it achieves an ultra-low TC for each chip.Implemented in a CMOS 180 nm process,the BGR occu-pies 0.548 mm²and operates at 2.5 V with 84μA current draw from a 5 V supply.An average TC of 2.69 ppm/℃ with two-point trimming and 0.81 ppm/℃ with multi-point trimming are achieved over the temperature range of-40 to 125℃.It accommo-dates a load current of 1 mA and an LS of 42 ppm/V,making it suitable for precise BMS applications.展开更多
以Ni_(0.66)Mn_(2.34)O_4为负温度系数(negative temperature coefficient,NTC)的热敏陶瓷基体,分别掺入Mg^(2+)、Zn^(2+)、Al^(3+)、Fe^(3+)或Ni^(2+)等不同离子,以考察对结构和电性能的影响。X射线衍射结果表明:所有样品均为单相尖晶...以Ni_(0.66)Mn_(2.34)O_4为负温度系数(negative temperature coefficient,NTC)的热敏陶瓷基体,分别掺入Mg^(2+)、Zn^(2+)、Al^(3+)、Fe^(3+)或Ni^(2+)等不同离子,以考察对结构和电性能的影响。X射线衍射结果表明:所有样品均为单相尖晶石结构,并计算出晶胞参数和近似的阳离子分布。电性能测量结果表明:当掺杂离子进入尖晶石结构B位时,对电阻率有较大影响;当掺杂离子进入尖晶石结构A位时,则对电阻率的影响较小。通过选择合适的掺杂离子可以调节其电性能参数。展开更多
基金supported by the National Natural Science Foundation of China(NSFC)under grant No.62204235。
文摘This paper introduces a high-precision bandgap reference(BGR)designed for battery management systems(BMS),fea-turing an ultra-low temperature coefficient(TC)and line sensitivity(LS).The BGR employs a current-mode scheme with chopped op-amps and internal clock generators to eliminate op-amp offset.A low dropout regulator(LDO)and a pre-regula-tor enhance output driving and LS,respectively.Curvature compensation enhances the TC by addressing higher-order nonlinear-ity.These approaches,effective near room temperature,employs trimming at both 20 and 60°C.When combined with fixed cur-vature correction currents,it achieves an ultra-low TC for each chip.Implemented in a CMOS 180 nm process,the BGR occu-pies 0.548 mm²and operates at 2.5 V with 84μA current draw from a 5 V supply.An average TC of 2.69 ppm/℃ with two-point trimming and 0.81 ppm/℃ with multi-point trimming are achieved over the temperature range of-40 to 125℃.It accommo-dates a load current of 1 mA and an LS of 42 ppm/V,making it suitable for precise BMS applications.
文摘以Ni_(0.66)Mn_(2.34)O_4为负温度系数(negative temperature coefficient,NTC)的热敏陶瓷基体,分别掺入Mg^(2+)、Zn^(2+)、Al^(3+)、Fe^(3+)或Ni^(2+)等不同离子,以考察对结构和电性能的影响。X射线衍射结果表明:所有样品均为单相尖晶石结构,并计算出晶胞参数和近似的阳离子分布。电性能测量结果表明:当掺杂离子进入尖晶石结构B位时,对电阻率有较大影响;当掺杂离子进入尖晶石结构A位时,则对电阻率的影响较小。通过选择合适的掺杂离子可以调节其电性能参数。
