Asynchronous rolling technology was adopted for the accumulated ten passes cold rolling, flange plate steel, and for welded H section steel, respectively. The metallographic microstructure analysis, tensile test and a...Asynchronous rolling technology was adopted for the accumulated ten passes cold rolling, flange plate steel, and for welded H section steel, respectively. The metallographic microstructure analysis, tensile test and annealing test were carried out for cold rolled pieces; thus the ratio of length to width of grain, tensile strength, relationship between the grain size and asynchronous rolling process parameters after annealing can be obtained. The experimental results show that the relationship between the asynchronous rolling and the shearing deformation of rolled pieces can make a reasonable interpretation of the mechanism that asynchronous rolling may improve the strain accumulated energy of rolled pieces and the strength of flange plate steel. This paper provides a theoretical basis for the application of asynchronous rolling in improving the strength of flange plate steel.展开更多
Hole mobility changes under uniaxial and combinational stress in different directions are characterized and analyzed by applying additive mechanical uniaxial stress to bulk Si and SiGe-virtual-substrate-induced strain...Hole mobility changes under uniaxial and combinational stress in different directions are characterized and analyzed by applying additive mechanical uniaxial stress to bulk Si and SiGe-virtual-substrate-induced strained- Si（s-Si）p-MOSFETs（metal-oxide-semiconductor field-effect transistors）along 110 and 100 channel directions. In bulk Si,a mobility enhancement peak is found under uniaxial compressive strain in the low vertical field.The combination of 100 direction uniaxial tensile strain and substrate-induced biaxial tensile strain provides a higher mobility relative to the 110 direction,opposite to the situation in bulk Si.But the combinational strain experiences a gain loss at high field,which means that uniaxial compressive strain may still be a better choice.The mobility enhancement of SiGe-induced strained p-MOSFETs along the 110 direction under additive uniaxial tension is explained by the competition between biaxial and shear stress.展开更多
文摘Asynchronous rolling technology was adopted for the accumulated ten passes cold rolling, flange plate steel, and for welded H section steel, respectively. The metallographic microstructure analysis, tensile test and annealing test were carried out for cold rolled pieces; thus the ratio of length to width of grain, tensile strength, relationship between the grain size and asynchronous rolling process parameters after annealing can be obtained. The experimental results show that the relationship between the asynchronous rolling and the shearing deformation of rolled pieces can make a reasonable interpretation of the mechanism that asynchronous rolling may improve the strain accumulated energy of rolled pieces and the strength of flange plate steel. This paper provides a theoretical basis for the application of asynchronous rolling in improving the strength of flange plate steel.
基金supported by the National Natural Science Foundation of China(Nos.60636010,60820106001)
文摘Hole mobility changes under uniaxial and combinational stress in different directions are characterized and analyzed by applying additive mechanical uniaxial stress to bulk Si and SiGe-virtual-substrate-induced strained- Si（s-Si）p-MOSFETs（metal-oxide-semiconductor field-effect transistors）along 110 and 100 channel directions. In bulk Si,a mobility enhancement peak is found under uniaxial compressive strain in the low vertical field.The combination of 100 direction uniaxial tensile strain and substrate-induced biaxial tensile strain provides a higher mobility relative to the 110 direction,opposite to the situation in bulk Si.But the combinational strain experiences a gain loss at high field,which means that uniaxial compressive strain may still be a better choice.The mobility enhancement of SiGe-induced strained p-MOSFETs along the 110 direction under additive uniaxial tension is explained by the competition between biaxial and shear stress.
