In this paper, we report a continuous deposition method for double-sided CeO2/YSZ/Y2O3 buffer layers by reel-to-reel in a D.C. magnetron reactive sputtering system. X-ray diffraction exhibited all the samples were hig...In this paper, we report a continuous deposition method for double-sided CeO2/YSZ/Y2O3 buffer layers by reel-to-reel in a D.C. magnetron reactive sputtering system. X-ray diffraction exhibited all the samples were highly c-axis oriented and atomic force microscope observations revealed a smooth, dense and crack-free surface morphology. Out-of-plane, in-plane texture, and surface roughness of multi-buffer layers were improved under optimized deposition conditions. Full width at half maximum (FWHM) values of out-of-plane and in-plane were about 4° and 5.5° in 50 cm double-sided buffed template. YBa2Cu3O7-δ films with thickness of 1.2 μm were deposited on both sides of the buffed tape. Both sides showed similar critical current density, Jc (77 K, self field) as 0.8 MA/cm2 and 0.7 MA/cm2, respectively.展开更多
The CeO2 and Y2O3 buffer layers were deposited on the cube textured metallic Ni substrates by using reactive magnetron sputtering. Ar/H2 mixed atmosphere, which is used as pre-depositing gas, can effectively inhibit t...The CeO2 and Y2O3 buffer layers were deposited on the cube textured metallic Ni substrates by using reactive magnetron sputtering. Ar/H2 mixed atmosphere, which is used as pre-depositing gas, can effectively inhibit the formation of NiO. In addition, the linear relationship between pre-depositing time and total depositing time is required to ensure the epitaxial growth of the films. The growth conditions of CeO2 and Y2O3 were comparatively studied, and it is found that the windows of substrate temperatures and pressures for CeO2 films are wider than that for Y2O3 films.展开更多
文摘In this paper, we report a continuous deposition method for double-sided CeO2/YSZ/Y2O3 buffer layers by reel-to-reel in a D.C. magnetron reactive sputtering system. X-ray diffraction exhibited all the samples were highly c-axis oriented and atomic force microscope observations revealed a smooth, dense and crack-free surface morphology. Out-of-plane, in-plane texture, and surface roughness of multi-buffer layers were improved under optimized deposition conditions. Full width at half maximum (FWHM) values of out-of-plane and in-plane were about 4° and 5.5° in 50 cm double-sided buffed template. YBa2Cu3O7-δ films with thickness of 1.2 μm were deposited on both sides of the buffed tape. Both sides showed similar critical current density, Jc (77 K, self field) as 0.8 MA/cm2 and 0.7 MA/cm2, respectively.
文摘The CeO2 and Y2O3 buffer layers were deposited on the cube textured metallic Ni substrates by using reactive magnetron sputtering. Ar/H2 mixed atmosphere, which is used as pre-depositing gas, can effectively inhibit the formation of NiO. In addition, the linear relationship between pre-depositing time and total depositing time is required to ensure the epitaxial growth of the films. The growth conditions of CeO2 and Y2O3 were comparatively studied, and it is found that the windows of substrate temperatures and pressures for CeO2 films are wider than that for Y2O3 films.
