We report fabrication and characterization of organic heterojunction UV detectors based on N,N＇-bis（naphthalen- 1-y1）-N,N＇-bis （phenyl） benzidine （NPB） and fullerene C60. The effects of different thicknesses o...We report fabrication and characterization of organic heterojunction UV detectors based on N,N＇-bis（naphthalen- 1-y1）-N,N＇-bis （phenyl） benzidine （NPB） and fullerene C60. The effects of different thicknesses of NPB and C60 layers are studied and compared. Notably, the optimal thicknesses of electron acceptor C60 and electron donor NPB are 40 nm and 80 nm, respectively. The J V characteristic curves of the device demonstrate a three-order- of-magnitude difference when illuminated under a 350nm UV light and in the dark at -0.5 V. The device exhibits high sensitivity in the region of 320-380nm with the peak located around 35Onm. Especially, it shows excellent photo-response characteristic with a responsivity as high as 315 mA/W under the illumination of 192μW.cm 2 350nm UV light at -5 V. These results indicate that the NPB/C60 heterojunction structure device might be used as low-cost low-voltage UV photodetectors.展开更多
A new complementary metal oxide semiconductor UV/blue-extended photodiode was presented for light detection in the UV/blue spectral range. Photoelectric characteristics of this presented photodiode were studied by num...A new complementary metal oxide semiconductor UV/blue-extended photodiode was presented for light detection in the UV/blue spectral range. Photoelectric characteristics of this presented photodiode were studied by numerical modeling and device simulation. Technology computer aided design simulation was done first to analyze its photoelectric characteristics. The structure characteristic and depletion situation of space between two adjacent P+ anodes were discussed. The reverse characteristic, spectral response characteristic and DC characteristic were discussed in detail. For the numerical modeling, dead layer effect is considered in the building of analytical mode. Dead layer is a space in which the boron doping profile decreases towards the surface due to high doping effects and boron redistribution, which affects the sensitivity of photodiode in the UV range seriously. Reverse characteristics and spectral response characteristics were modeled and analyzed typically. At last, silicon test results were given and compared with the simulated result, which shows reasonable match for each.展开更多
Two silicon-based ultraviolet （UV） and blue-extended photodiodes are presented, which were fabricated for light detection in the ultraviolet/blue spectral range. Stripe-shaped and octagon-ring-shaped structures were...Two silicon-based ultraviolet （UV） and blue-extended photodiodes are presented, which were fabricated for light detection in the ultraviolet/blue spectral range. Stripe-shaped and octagon-ring-shaped structures were designed to verify parameters of the UV-responsivity, UV-selectivity, breakdown voltage, and response time. The ultra-shallow lateral pn junction had been successfully realized in a standard 0.5-μm complementary metal oxide semiconductor （CMOS） process to enlarge the pn junction area, enhance the absorption of UV light, and improve the responsivity and quantum efficiency. The test results illustrated that the stripe-shaped structure has the lower breakdown voltage, higher UV-responsicity, and higher UV-selectivity. But the octagon-ring-shaped structure has the lower dark current. The response time of both structures was almost the same.展开更多
Inspired by the breakthrough of three-dimensional hybrid perovskite CH_(3)NH_(3)PbI_(3),two-dimensional(2D)layered organic-inorganic halide perovskites are emerging as another promising class of hybrid materials for o...Inspired by the breakthrough of three-dimensional hybrid perovskite CH_(3)NH_(3)PbI_(3),two-dimensional(2D)layered organic-inorganic halide perovskites are emerging as another promising class of hybrid materials for optoelectronic devices,such as photodetectors fabricated on lead halide perovskites.However,the majority of such 2D materials exhibit photosensitivity to visible light,while few candidates have been reported to exhibit visible-blind ultraviolet(UV)photoelectric response.Here,we present a new hybrid material,(1,4-butyldiammonium)CdBr_(4)(1),in which the corner-sharing CdBr_(6)octahedra construct the 2D perovskite-type inorganic frameworks.The optical bandgap(Eg)of 1 is estimated to be~3.45 eV.Particularly,1 shows spectral-selective photoconductivity,that is,it is sensitive to UV-light illumination below 360 nm but almost blind to the standard visible light(above 400 nm),disclosing the potential of 1 for visible-blind ultraviolet photodetection.Further theoretical analyses of its electronic structure and energy gap disclose that the inorganic perovskite architecture dominates the optical bandgap.It is believed that this work provides a potential route for the design and fabrication of new 2D hybrid perovskite materials with a UV photoelectric response.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 61274068 and 61404058the Project of Science and Technology Development Plan of Jilin Province under Grant Nos 20150204003GX and 20130206021GXthe Project of Science and Technology Plan of Changchun City under Grant No 14KG020
文摘We report fabrication and characterization of organic heterojunction UV detectors based on N,N＇-bis（naphthalen- 1-y1）-N,N＇-bis （phenyl） benzidine （NPB） and fullerene C60. The effects of different thicknesses of NPB and C60 layers are studied and compared. Notably, the optimal thicknesses of electron acceptor C60 and electron donor NPB are 40 nm and 80 nm, respectively. The J V characteristic curves of the device demonstrate a three-order- of-magnitude difference when illuminated under a 350nm UV light and in the dark at -0.5 V. The device exhibits high sensitivity in the region of 320-380nm with the peak located around 35Onm. Especially, it shows excellent photo-response characteristic with a responsivity as high as 315 mA/W under the illumination of 192μW.cm 2 350nm UV light at -5 V. These results indicate that the NPB/C60 heterojunction structure device might be used as low-cost low-voltage UV photodetectors.
基金Projects(61233010,61274043)supported by the National Natural Science Foundation of ChinaProject(NCET-11-0975)supported by the Program for New Century Excellent Talents in University,China
文摘A new complementary metal oxide semiconductor UV/blue-extended photodiode was presented for light detection in the UV/blue spectral range. Photoelectric characteristics of this presented photodiode were studied by numerical modeling and device simulation. Technology computer aided design simulation was done first to analyze its photoelectric characteristics. The structure characteristic and depletion situation of space between two adjacent P+ anodes were discussed. The reverse characteristic, spectral response characteristic and DC characteristic were discussed in detail. For the numerical modeling, dead layer effect is considered in the building of analytical mode. Dead layer is a space in which the boron doping profile decreases towards the surface due to high doping effects and boron redistribution, which affects the sensitivity of photodiode in the UV range seriously. Reverse characteristics and spectral response characteristics were modeled and analyzed typically. At last, silicon test results were given and compared with the simulated result, which shows reasonable match for each.
基金This work is supported by the State Key Program of National Natural Science of China （61233010）, by the National Natural Science Foundation of China （61274043） and by the Program for New Century Excellent Talents in University of Ministry of Education of China （NCET- 11-0975）. Open Access This article is distributed under the terms of the Creative Commons Attribution License which permits any use, distribution, and reproduction in any medium, provided the original author（s） and source are credited.
文摘Two silicon-based ultraviolet （UV） and blue-extended photodiodes are presented, which were fabricated for light detection in the ultraviolet/blue spectral range. Stripe-shaped and octagon-ring-shaped structures were designed to verify parameters of the UV-responsivity, UV-selectivity, breakdown voltage, and response time. The ultra-shallow lateral pn junction had been successfully realized in a standard 0.5-μm complementary metal oxide semiconductor （CMOS） process to enlarge the pn junction area, enhance the absorption of UV light, and improve the responsivity and quantum efficiency. The test results illustrated that the stripe-shaped structure has the lower breakdown voltage, higher UV-responsicity, and higher UV-selectivity. But the octagon-ring-shaped structure has the lower dark current. The response time of both structures was almost the same.
基金supported by the NSFC(21525104,21833010,21622108,51502290,21601188)the NSF of Fujian Province(2015J05040)+1 种基金the Strategic Priority Research Program of the Chinese Academy of Sciences(XDB20000000)the Youth Innovation Promotion of CAS(2014262 and 2015240).
文摘Inspired by the breakthrough of three-dimensional hybrid perovskite CH_(3)NH_(3)PbI_(3),two-dimensional(2D)layered organic-inorganic halide perovskites are emerging as another promising class of hybrid materials for optoelectronic devices,such as photodetectors fabricated on lead halide perovskites.However,the majority of such 2D materials exhibit photosensitivity to visible light,while few candidates have been reported to exhibit visible-blind ultraviolet(UV)photoelectric response.Here,we present a new hybrid material,(1,4-butyldiammonium)CdBr_(4)(1),in which the corner-sharing CdBr_(6)octahedra construct the 2D perovskite-type inorganic frameworks.The optical bandgap(Eg)of 1 is estimated to be~3.45 eV.Particularly,1 shows spectral-selective photoconductivity,that is,it is sensitive to UV-light illumination below 360 nm but almost blind to the standard visible light(above 400 nm),disclosing the potential of 1 for visible-blind ultraviolet photodetection.Further theoretical analyses of its electronic structure and energy gap disclose that the inorganic perovskite architecture dominates the optical bandgap.It is believed that this work provides a potential route for the design and fabrication of new 2D hybrid perovskite materials with a UV photoelectric response.
