A functional interlayer based on two-dimensional(2D)porous modified vermiculite nanosheets(PVS)was obtained by acid-etching vermiculite nanosheets.The as-obtained 2D porous nanosheets exhibited a high specific surface...A functional interlayer based on two-dimensional(2D)porous modified vermiculite nanosheets(PVS)was obtained by acid-etching vermiculite nanosheets.The as-obtained 2D porous nanosheets exhibited a high specific surface area of 427 m^(2)·g^(-1)and rich surface active sites,which help restrain polysulfides(LiPSs)through good physi-cal and chemical adsorption,while simultaneously accelerating the nucleation and dissolution kinetics of Li_(2)S,effec-tively suppressing the shuttle effect.The assembled lithium-sulfur batteries(LSBs)employing the PVS-based inter-layer delivered a high initial discharge capacity of 1386 mAh·g^(-1)at 0.1C(167.5 mAh·g^(-1)),long-term cycling stabil-ity,and good rate property.展开更多
Field-effect transistors （FETs） for logic applications, graphene and MoS2, are discussed. These materials have based on two representative two-dimensional （2D） materials, drastically different properties and requi...Field-effect transistors （FETs） for logic applications, graphene and MoS2, are discussed. These materials have based on two representative two-dimensional （2D） materials, drastically different properties and require different consider- ations. The unique band structure of graphene necessitates engineering of the Dirac point, including the opening of the bandgap, the doping and the interface, before the graphene can be used in logic applications. On the other hand, MoS2 is a semiconductor, and its electron transport depends heavily on the surface properties, the number of layers, and the carrier density. Finally, we discuss the prospects for the future developments in 2D material transistors.展开更多
The fundamental momentum conservation requirement q - 0 for the Raman process is relaxed in the nanocrystal- lites （NCs）, and phonons away from the Brillouin-zone center will be involved in the Raman scattering, whi...The fundamental momentum conservation requirement q - 0 for the Raman process is relaxed in the nanocrystal- lites （NCs）, and phonons away from the Brillouin-zone center will be involved in the Raman scattering, which is well-known as the phonon confinement effect in NCs. This usually gives a downshift and asymmetric broadening of the Raman peak in various NCs. Recently, the A1 mode of 1L MoS2 NCs is found to exhibit a blue shift and asymmetric broadening toward the high-frequency side [Chem. Soc. Rev. 44 （2015） 2757 and Phys. Rev. B 91 （2015） 195411]. In this work, we carefully check this issue by studying Raman spectra of lL MoS2 NCs prepared by the ion implantation technique in a wide range of ion-implanted dosage. The same confinement coefficient is used for both E＇ and A＇1 modes in 1L MoS2 NCs since the phonon uncertainty in an NC is mainly determined by its domain size. The asymmetrical broadening near the A＇1 and E＇ modes is attributed to the appearance of defect-activated phonons at the zone edge and the intrinsic asymmetrical broadening of the two modes, where the anisotropy of phonon dispersion curves along Г-K and Г- M is also considered. The photoluminescence spectra confirm the formation of small domain size of 1L MoS2 nanocrystallites in the ion-implanted 1L MoS2. This study provides not only an approach to quickly probe phonon dispersion trends of 2D materials away from Г by the Raman scattering of the corresponding NCs, but also a reference to completely understand the confinement effect of different modes in various nanomaterials.展开更多
In a vast number of engineering fields like medicine,aerospace or robotics,materials are required to meet unusual performances that simple homogeneous materials are often not able to fulfil.Consequently,many efforts a...In a vast number of engineering fields like medicine,aerospace or robotics,materials are required to meet unusual performances that simple homogeneous materials are often not able to fulfil.Consequently,many efforts are currently devoted to develop future generations of materials with enhanced properties and unusual functionalities.In many instances,biological systems served as a source of inspiration,as in the case of cellular materials.Commonly observed in nature,cellular materials offer useful combinations of structural properties and low weight,yielding the possibility of coexistence of what used to be antagonistic physical properties within a single material.Due to their peculiar characteristics,they are very promising for engineering applications in a variety of industries including aerospace,automotive,marine and constructions.However,their use is conditional upon the development of appropriate constitutive models for revealing the complex relations between the microstructure's parameters and the macroscopic behavior.From this point of view,a great variety of analytical and numerical techniques have been proposed and exhaustively discussed in recent years.Noteworthy contributions,suggesting different assumptions and techniques are critically presented in this review paper.展开更多
Magnesium hydride(MgH_(2)),which possesses high hydrogen density of 7.6 wt%,abundant resource and non-toxicity,has captured intense attention as one of the potential hydrogen storage materials.However,the practical ap...Magnesium hydride(MgH_(2)),which possesses high hydrogen density of 7.6 wt%,abundant resource and non-toxicity,has captured intense attention as one of the potential hydrogen storage materials.However,the practical application of Mg/MgH_(2) system is suffering from high thermal stability,sluggish absorption and desorption kinetics.Herein,two-dimensional(2D) vanadium nanosheets(V_(NS)) were successfully prepared via a facile wet chemical ball milling method and proved to be highly effective on improving the hydrogen storage performance of MgH_(2).For instance,the MgH_(2)+7 wt% V_(NS) composite began to release hydrogen at 187.2℃,152 ℃ lower than that of additive-free MgH_(2).At 300℃,6.3 wt% hydrogen was released from the MgH_(2)+7 wt% V_(NS) composite within 10 min.In addition,the fully dehydrogenated sample could absorb hydrogen even at room temperature under hydrogen pressure of 3.2 MPa.X-ray diffractometer(XRD) and transmission electron microscopy(TEM)results confirmed metallic vanadium served as catalytic unit for facilitating the de/rehydrogenation reaction of MgH_(2).This finding presents an example of facile synthesis of two-dimensional(2D) vanadium with excellent catalysis,which may shed light on future design and preparation of highly effective layered catalysts for hydrogen storage and other energy-related areas.展开更多
Based on the thermal network of the two-dimensional heterojunction bipolar transistors(HBTs) array, the thermal resistance matrix is presented, including the self-heating thermal resistance and thermal coupling resist...Based on the thermal network of the two-dimensional heterojunction bipolar transistors(HBTs) array, the thermal resistance matrix is presented, including the self-heating thermal resistance and thermal coupling resistance to describe the self-heating and thermal coupling effects, respectively.For HBT cells along the emitter length direction, the thermal coupling resistance is far smaller than the self-heating thermal resistance, and the peak junction temperature is mainly determined by the self-heating thermal resistance.However, the thermal coupling resistance is in the same order with the self-heating thermal resistance for HBT cells along the emitter width direction.Furthermore, the dependence of the thermal resistance matrix on cell spacing along the emitter length direction and cell spacing along the emitter width direction is also investigated, respectively.It is shown that the moderate increase of cell spacings along the emitter length direction and the emitter width direction could effectively lower the self-heating thermal resistance and thermal coupling resistance,and hence the peak junction temperature is decreased, which sheds light on adopting a two-dimensional non-uniform cell spacing layout to improve the uneven temperature distribution.By taking a 2 × 6 HBTs array for example, a twodimensional non-uniform cell spacing layout is designed, which can effectively lower the peak junction temperature and reduce the non-uniformity of the dissipated power.For the HBTs array with optimized layout, the high power-handling capability and thermal dissipation capability are kept when the bias voltage increases.展开更多
Based on the explicit finite element(FE) method and platform of ABAQUS,considering both the inhomogeneity of soils and concave-convex fluctuation of topography,a large-scale refined two-dimensional(2D) FE nonlinear an...Based on the explicit finite element(FE) method and platform of ABAQUS,considering both the inhomogeneity of soils and concave-convex fluctuation of topography,a large-scale refined two-dimensional(2D) FE nonlinear analytical model for Fuzhou Basin was established.The peak ground motion acceleration(PGA) and focusing effect with depth were analyzed.Meanwhile,the results by wave propagation of one-dimensional(1D) layered medium equivalent linearization method were added for contrast.The results show that:1) PGA at different depths are obviously amplified compared to the input ground motion,amplification effect of both funnel-shaped depression and upheaval areas(based on the shape of bedrock surface) present especially remarkable.The 2D results indicate that the PGA displays a non-monotonic decreasing with depth and a greater focusing effect of some particular layers,while the 1D results turn out that the PGA decreases with depth,except that PGA at few particular depth increases abruptly; 2) To the funnel-shaped depression areas,PGA amplification effect above 8 m depth shows relatively larger,to the upheaval areas,PGA amplification effect from 15 m to 25 m depth seems more significant.However,the regularities of the PGA amplification effect could hardly be found in the rest areas; 3) It appears a higher regression rate of PGA amplification coefficient with depth when under a smaller input motion; 4) The frequency spectral characteristic of input motion has noticeable effects on PGA amplification tendency.展开更多
Though the quantum spin Hall effect（QSHE） in two-dimensional（2 D） crystals has been widely explored, the experimental realization of quantum transport properties is only limited to HgTe/CdTe or InAs/GaSb quantum w...Though the quantum spin Hall effect（QSHE） in two-dimensional（2 D） crystals has been widely explored, the experimental realization of quantum transport properties is only limited to HgTe/CdTe or InAs/GaSb quantum wells. Here we employ a tight-binding model on the basis of d（z^2）, d（xy）, and d（x^2-y^2） orbitals to propose QSHE in the triangular lattice, which are driven by a crossing of electronic bands at the Γ point. Remarkably, 2 D oxidized Mxenes W2 M2 C3 are ideal materials with nontrivial gap of 0.12 eV, facilitating room-temperature observations in experiments. We also find that the nontrivially topological properties of these materials are sensitive to the cooperative effect of the electron correlation and spin-orbit coupling. Due to the feasible exfoliation from its 3 D MAX phase, our work paves a new direction towards realizing QSHE with low dissipation.展开更多
The Magnus Hall effect(MHE) is a new type of linear-response Hall effect, recently proposed to appear in two-dimensional(2D) nonmagnetic systems at zero magnetic field in the ballistic limit. The MHE arises from a sel...The Magnus Hall effect(MHE) is a new type of linear-response Hall effect, recently proposed to appear in two-dimensional(2D) nonmagnetic systems at zero magnetic field in the ballistic limit. The MHE arises from a self-rotating Bloch electron moving under a gradient-electrostatic potential, analogous to the Magnus effect in the macrocosm. Unfortunately, the MHE is usually accompanied by a trivial transverse signal, which hinders its experimental observation. We systematically investigate the material realization and experimental measurement of the MHE, based on symmetry analysis and first-principles calculations. It is found that both the out-ofplane mirror and in-plane two-fold symmetries can neutralize the trivial transverse signal to generate clean MHE signals. We choose two representative 2D materials, monolayer MoS_(2), and bilayer WTe_(2), to study the quantitative dependency of MHE signals on the direction of the electric field. The results are qualitatively consistent with the symmetry analysis, and suggest that an observable MHE signal requires giant Berry curvatures. Our results provide detailed guidance for the future experimental exploration of MHE.展开更多
The various competing contributions to the anomalous Hall effect in spin-polarized two-dimensional electron gases in the presence of both intrinsic, extrinsic and external electric-field induced spin-orbit coupling we...The various competing contributions to the anomalous Hall effect in spin-polarized two-dimensional electron gases in the presence of both intrinsic, extrinsic and external electric-field induced spin-orbit coupling were investigated theoretically. Based on a unified semiclassical theoretical approach, it is shown that the total anomalous Hall conductivity can be expressed as the sum of three distinct contributions in the presence of these competing spin-orbit interactions, namely an intrinsic contribution determined by the Berry curvature in the momentum space, an extrinsic contribution determined by the modified Bloch band group velocity and an extrinsic contribution determined by spin-orbit-dependent impurity scattering. The characteristics of these competing contributions are discussed in detail in the paper.展开更多
We report the experimental observation of two-dimensional Talbot effect when a resonance plane wave interacts with a two-dimensional atomic density grating generated by standing wave manipulation of ultracold Bose gas...We report the experimental observation of two-dimensional Talbot effect when a resonance plane wave interacts with a two-dimensional atomic density grating generated by standing wave manipulation of ultracold Bose gases. Clear self-images of the grating and sub-images with reversed phase or fractal patterns are observed. By calculating the autocorrelation functions of the images, the behavior of periodic Talbot images is studied. The Talbot effect with two-dimensional atomic density grating expands the applications of the Talbot effect in a wide variety of research fields.展开更多
The investigation of two-dimensional(2D)materials has advanced into practical device applications,such as cascaded logic stages.However,incompatible electrical properties and inappropriate logic levels remain enormous...The investigation of two-dimensional(2D)materials has advanced into practical device applications,such as cascaded logic stages.However,incompatible electrical properties and inappropriate logic levels remain enormous challenges.In this work,a doping-free strategy is investigated by top gated(TG)MoS_(2) field-effect transistors(FETs)using various metal gates(Au,Cu,Ag,and Al).These metals with different work functions provide a convenient tuning knob for controlling threshold voltage(V_(th))for MoS_(2) FETs.For instance,the Al electrode can create an extra electron doping(n-doping)behavior in the MoS_(2) TG-FETs due to a dipole effect at the gate-dielectric interface.In this work,by achieving matched electrical properties for the load transistor and the driver transistor in an inverter circuit,we successfully demonstrate wafer-scale MoS_(2) inverter arrays with an optimized inverter switching threshold voltage(V_(M))of 1.5 V and a DC voltage gain of 27 at a supply voltage(V_(DD))of 3 V.This work offers a novel scheme for the fabrication of fully integrated multistage logic circuits based on wafer-scale MoS_(2) film.展开更多
By considering the effect of suspended solid particles in the ordinary equations for two-dimension inviscid incompressible mixing layer, the Rayleigh equation and the modified Rayleigh equation are obtained. And then,...By considering the effect of suspended solid particles in the ordinary equations for two-dimension inviscid incompressible mixing layer, the Rayleigh equation and the modified Rayleigh equation are obtained. And then, by solving the corresponding eigen-value equations with numerical computational method, the relation curves between perturbation frequency and spacial growth rate of the mixing layer for the varying particle loading, ratio of particle velocity to fluid velocity and Stokes number are got. Sever al important conclusions on the effect of suspended solid particles on unstability of the mixing layer are presented in the end by analyzing all the relation curves.展开更多
The effects of out-of-plane shear flows on fast magnetic reconnection are numerically investigated by a two- dimensional （2D） hybrid model in an initial Harris sheet equilibrium with flows. The equilibrium and drive...The effects of out-of-plane shear flows on fast magnetic reconnection are numerically investigated by a two- dimensional （2D） hybrid model in an initial Harris sheet equilibrium with flows. The equilibrium and driven shear flows out of the 2D reconnection plane with symmetric and antisymmetric profiles respectively are used in the simulation. It is found that the out-of-plane flows with shears in-plane can change the quadrupolar structure of the out-of-plane magnetic field and, therefore, modify the growth rate of magnetic reconnection. Furthermore, the driven flow varying along the anti-parallel magnetic field can either enhance or reduce the reconnection rate as the direction of flow changes. Secondary islands are also generated in the process with converting the initial X-point into an O-point.展开更多
In this paper, we present a two-dimensional （2D） fully analytical model with consideration of polarization effect for the channel potential and electric field distributions of the gate field-plated high electron mob...In this paper, we present a two-dimensional （2D） fully analytical model with consideration of polarization effect for the channel potential and electric field distributions of the gate field-plated high electron mobility transistor （FP-HEMT） on the basis of 2D Poisson＇s solution. The dependences of the channel potential and electric field distributions on drain bias, polarization charge density, FP structure parameters, A1GaN/GaN material parameters, etc. are investigated. A simple and convenient approach to designing high breakdown voltage FP-HEMTs is also proposed. The validity of this model is demonstrated by comparison with the numerical simulations with Silvaco-Atlas. The method in this paper can be extended to the development of other analytical models for different device structures, such as MIS-HEMTs, multiple-FP HETMs, slant-FP HEMTs, etc.展开更多
Introduction: We have previously developed an effective atomic number (Zeff) measurement method using linear attenuation coefficients (LACs) obtained by energy-resolved computed tomography (CT) with one-dimensional (1...Introduction: We have previously developed an effective atomic number (Zeff) measurement method using linear attenuation coefficients (LACs) obtained by energy-resolved computed tomography (CT) with one-dimensional (1D) detector. The energy-resolved CT was performed with a “transXend” detector, which measured X-rays as electric current and then gave X-ray energy distribution with unfolding analysis using pre-estimated response function (RF). The purpose of this study is to measure Zeff by the energy-resolved CT using a flat panel detector (FPD). Methods: To demonstrate a 2D transXend detector, we developed the stripe absorbers for the FPD. Eleven human tissue-equivalent material rods which were grouped into four material categories were measured by X-rays with 120 kVp tube voltage, 2.3 mA tube current, and 1.0 s exposure time. Zeff is measured by the ratio of LACs with two different pseudo-monochromatic X-ray energies. RFs of each rod material were estimated by numerical calculation. First, we employed the RF estimated for the same rod material (self-RF scenario). Second, we employed the RF estimated for the different rod materials in the same material category (cross-RF scenario). The purpose of the cross-RF scenario was to find representative rod materials in each material category. Results: Upon the self-RF scenario, measured Zeffs were systematically underestimated. Median relative error to theoretical Zeff was -6.92% (range: -7.89% - -4.60%). After normalizing measured Zeffs to the theoretical one for Breast, median relative error improved to -0.75% (range: -1.79% - +1.73%). Upon the cross-RF scenario, the representative rod materials were found in two material categories. Conclusion: Zeff measurements were performed by energy-resolved CT using 2D transXend detector with numerically-estimated RF data. Normalized Zeffs for all rod materials in the self-RF scenario were in good agreement with the theoretical ones.展开更多
Non-Hermitian Hamiltonians are widely used in describing open systems with gain and loss,among which a key phenomenon is the non-Hermitian skin effect.Here we report an experimental scheme to realize a twodimensional(...Non-Hermitian Hamiltonians are widely used in describing open systems with gain and loss,among which a key phenomenon is the non-Hermitian skin effect.Here we report an experimental scheme to realize a twodimensional(2D)discrete-time quantum walk with non-Hermitian skin effect in a single trapped ion.It is shown that the coin and 2D walker states can be labeled in the spin of the ion and the coherent-state lattice of the ion motion,respectively.We numerically observe a directional bulk flow,whose orientations are controlled by dissipative parameters,showing the emergence of the non-Hermitian skin effect.We then discuss an experimental implementation of our scheme in a laser-controlled trapped Ca^(+)ion.Our experimental proposal may be applicable to research of dissipative quantum walk systems and may be able to generalize to other platforms,such as superconducting circuits and atoms in cavity.展开更多
A two-dimensional （2D） fluid model is presented to study the behavior of silicon plasma mixed with SiH4 , N2 , and NH3 in a radio-frequency capacitively coupled plasma （CCP） reactor. The plasma–wall interaction ...A two-dimensional （2D） fluid model is presented to study the behavior of silicon plasma mixed with SiH4 , N2 , and NH3 in a radio-frequency capacitively coupled plasma （CCP） reactor. The plasma–wall interaction （including the deposition） is modeled by using surface reaction coefficients. In the present paper we try to identify, by numerical simulations, the effect of variations of the process parameters on the plasma properties. It is found from our simulations that by increasing the gas pressure and the discharge gap, the electron density profile shape changes continuously from an edge-high to a center-high, thus the thin films become more uniform. Moreover, as the N2 /NH3 ratio increases from 6/13 to 10/9, the hydrogen content can be significantly decreased, without decreasing the electron density significantly.展开更多
Two-dimensional(2D)transition metal dichalcogenides(TMDs),endowed with exceptional light-matter interaction strength,have become a pivotal platform in advanced optoelectronics,enabling atomically precise control of ex...Two-dimensional(2D)transition metal dichalcogenides(TMDs),endowed with exceptional light-matter interaction strength,have become a pivotal platform in advanced optoelectronics,enabling atomically precise control of excitonic phenomena and offering transformative potential for engineering next-generation optoelectronic devices.In contrast to the narrowband absorption characteristics of conventional band-edge excitons,which are limited by the bandgap energy,highenergy excitons not only demonstrate broad momentum matching capability in the ultraviolet regime due to band nesting effects,but also exhibit distinct absorption peak signatures owing to robust excitonic stabilization under 2D confinement.These unique photophysical properties have established such systems as a prominent research frontier in contemporary exciton physics.This review primarily outlines the distinctive physical characteristics of high-energy excitons in TMDs from the perspectives of band structure,excitonic characteristics,and optical properties.Subsequently,we systematically delineate cutting-edge developments in TMD-based photonic devices exploiting high-energy excitonic band-nesting phenomena,with dedicated emphasis on the strategic engineering of nanoscale heterostructures for tailored optoelectronic functionality.Finally,the discussion concludes with an examination of the challenges associated with the design of high-energy exciton devices and their potential future applications.展开更多
The relentless down-scaling of electronics grands the modern integrated circuits(ICs)with the high speed,low power dissipation and low cost,fulfilling diverse demands of modern life.Whereas,with the semiconductor indu...The relentless down-scaling of electronics grands the modern integrated circuits(ICs)with the high speed,low power dissipation and low cost,fulfilling diverse demands of modern life.Whereas,with the semiconductor industry entering into sub-10 nm technology nodes,degrading device performance and increasing power consumption give rise to insurmountable roadblocks confronted by modern ICs that need to be conquered to sustain the Moore law's life.Bulk semiconductors like prevalent Si are plagued by seriously degraded carrier mobility as thickness thinning down to sub-5 nm,which is imperative to maintain sufficient gate electrostatic controllability to combat the increasingly degraded short channel effects.Nowadays,the emergence of two-dimensional(2D)materials opens up new gateway to eschew the hurdles laid in front of the scaling trend of modern IC,mainly ascribed to their ultimately atomic thickness,capability to maintain carrier mobility with thickness thinning down,dangling-bonds free surface,wide bandgaps tunability and feasibility to constitute diverse heterostructures.Blossoming breakthroughs in discrete electronic device,such as contact engineering,dielectric integration and vigorous channel-length scaling,or large circuits arrays,as boosted yields,improved variations and full-functioned processor fabrication,based on 2D materials have been achieved nowadays,facilitating 2D materials to step under the spotlight of IC industry to be treated as the most potential future successor or complementary counterpart of incumbent Si to further sustain the down-scaling of modern IC.展开更多
文摘A functional interlayer based on two-dimensional(2D)porous modified vermiculite nanosheets(PVS)was obtained by acid-etching vermiculite nanosheets.The as-obtained 2D porous nanosheets exhibited a high specific surface area of 427 m^(2)·g^(-1)and rich surface active sites,which help restrain polysulfides(LiPSs)through good physi-cal and chemical adsorption,while simultaneously accelerating the nucleation and dissolution kinetics of Li_(2)S,effec-tively suppressing the shuttle effect.The assembled lithium-sulfur batteries(LSBs)employing the PVS-based inter-layer delivered a high initial discharge capacity of 1386 mAh·g^(-1)at 0.1C(167.5 mAh·g^(-1)),long-term cycling stabil-ity,and good rate property.
基金supported by the National Basic Research Program of China (Grant No. 2013CBA01600)the National Natural Science Foundation of China (Grant Nos. 61261160499 and 11274154)+2 种基金the National Science and Technology Major Project of the Ministry of Science and Technology of China (Grant No. 2011ZX02707)the Natural Science Foundation of Jiangsu Province, China (Grant No. BK2012302)the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20120091110028)
文摘Field-effect transistors （FETs） for logic applications, graphene and MoS2, are discussed. These materials have based on two representative two-dimensional （2D） materials, drastically different properties and require different consider- ations. The unique band structure of graphene necessitates engineering of the Dirac point, including the opening of the bandgap, the doping and the interface, before the graphene can be used in logic applications. On the other hand, MoS2 is a semiconductor, and its electron transport depends heavily on the surface properties, the number of layers, and the carrier density. Finally, we discuss the prospects for the future developments in 2D material transistors.
基金Supported by the National Natural Science Foundation of China under Grant Nos 11225421,11474277,11434010 and 11574305the National Young 1000 Talent Plan
文摘The fundamental momentum conservation requirement q - 0 for the Raman process is relaxed in the nanocrystal- lites （NCs）, and phonons away from the Brillouin-zone center will be involved in the Raman scattering, which is well-known as the phonon confinement effect in NCs. This usually gives a downshift and asymmetric broadening of the Raman peak in various NCs. Recently, the A1 mode of 1L MoS2 NCs is found to exhibit a blue shift and asymmetric broadening toward the high-frequency side [Chem. Soc. Rev. 44 （2015） 2757 and Phys. Rev. B 91 （2015） 195411]. In this work, we carefully check this issue by studying Raman spectra of lL MoS2 NCs prepared by the ion implantation technique in a wide range of ion-implanted dosage. The same confinement coefficient is used for both E＇ and A＇1 modes in 1L MoS2 NCs since the phonon uncertainty in an NC is mainly determined by its domain size. The asymmetrical broadening near the A＇1 and E＇ modes is attributed to the appearance of defect-activated phonons at the zone edge and the intrinsic asymmetrical broadening of the two modes, where the anisotropy of phonon dispersion curves along Г-K and Г- M is also considered. The photoluminescence spectra confirm the formation of small domain size of 1L MoS2 nanocrystallites in the ion-implanted 1L MoS2. This study provides not only an approach to quickly probe phonon dispersion trends of 2D materials away from Г by the Raman scattering of the corresponding NCs, but also a reference to completely understand the confinement effect of different modes in various nanomaterials.
文摘In a vast number of engineering fields like medicine,aerospace or robotics,materials are required to meet unusual performances that simple homogeneous materials are often not able to fulfil.Consequently,many efforts are currently devoted to develop future generations of materials with enhanced properties and unusual functionalities.In many instances,biological systems served as a source of inspiration,as in the case of cellular materials.Commonly observed in nature,cellular materials offer useful combinations of structural properties and low weight,yielding the possibility of coexistence of what used to be antagonistic physical properties within a single material.Due to their peculiar characteristics,they are very promising for engineering applications in a variety of industries including aerospace,automotive,marine and constructions.However,their use is conditional upon the development of appropriate constitutive models for revealing the complex relations between the microstructure's parameters and the macroscopic behavior.From this point of view,a great variety of analytical and numerical techniques have been proposed and exhaustively discussed in recent years.Noteworthy contributions,suggesting different assumptions and techniques are critically presented in this review paper.
基金financially supported by the National Natural Science Foundation of China(No.51801078)the Natural Science Foundation of Jiangsu Province(No.BK20180986)。
文摘Magnesium hydride(MgH_(2)),which possesses high hydrogen density of 7.6 wt%,abundant resource and non-toxicity,has captured intense attention as one of the potential hydrogen storage materials.However,the practical application of Mg/MgH_(2) system is suffering from high thermal stability,sluggish absorption and desorption kinetics.Herein,two-dimensional(2D) vanadium nanosheets(V_(NS)) were successfully prepared via a facile wet chemical ball milling method and proved to be highly effective on improving the hydrogen storage performance of MgH_(2).For instance,the MgH_(2)+7 wt% V_(NS) composite began to release hydrogen at 187.2℃,152 ℃ lower than that of additive-free MgH_(2).At 300℃,6.3 wt% hydrogen was released from the MgH_(2)+7 wt% V_(NS) composite within 10 min.In addition,the fully dehydrogenated sample could absorb hydrogen even at room temperature under hydrogen pressure of 3.2 MPa.X-ray diffractometer(XRD) and transmission electron microscopy(TEM)results confirmed metallic vanadium served as catalytic unit for facilitating the de/rehydrogenation reaction of MgH_(2).This finding presents an example of facile synthesis of two-dimensional(2D) vanadium with excellent catalysis,which may shed light on future design and preparation of highly effective layered catalysts for hydrogen storage and other energy-related areas.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61006059 and 61774012)Beijing Municipal Natural Science Foundation,China(Grant No.4143059)+3 种基金Beijing Municipal Education Committee,China(Grant No.KM201710005027)Postdoctoral Science Foundation of Beijing,China(Grant No.2015ZZ-11)China Postdoctoral Science Foundation(Grant No.2015M580951)Scientific Research Foundation Project of Beijing Future Chip Technology Innovation Center,China(Grant No.KYJJ2016008)
文摘Based on the thermal network of the two-dimensional heterojunction bipolar transistors(HBTs) array, the thermal resistance matrix is presented, including the self-heating thermal resistance and thermal coupling resistance to describe the self-heating and thermal coupling effects, respectively.For HBT cells along the emitter length direction, the thermal coupling resistance is far smaller than the self-heating thermal resistance, and the peak junction temperature is mainly determined by the self-heating thermal resistance.However, the thermal coupling resistance is in the same order with the self-heating thermal resistance for HBT cells along the emitter width direction.Furthermore, the dependence of the thermal resistance matrix on cell spacing along the emitter length direction and cell spacing along the emitter width direction is also investigated, respectively.It is shown that the moderate increase of cell spacings along the emitter length direction and the emitter width direction could effectively lower the self-heating thermal resistance and thermal coupling resistance,and hence the peak junction temperature is decreased, which sheds light on adopting a two-dimensional non-uniform cell spacing layout to improve the uneven temperature distribution.By taking a 2 × 6 HBTs array for example, a twodimensional non-uniform cell spacing layout is designed, which can effectively lower the peak junction temperature and reduce the non-uniformity of the dissipated power.For the HBTs array with optimized layout, the high power-handling capability and thermal dissipation capability are kept when the bias voltage increases.
基金Project(2011CB013601) supported by the National Basic Research Program of ChinaProject(51378258) supported by the National Natural Science Foundation of China
文摘Based on the explicit finite element(FE) method and platform of ABAQUS,considering both the inhomogeneity of soils and concave-convex fluctuation of topography,a large-scale refined two-dimensional(2D) FE nonlinear analytical model for Fuzhou Basin was established.The peak ground motion acceleration(PGA) and focusing effect with depth were analyzed.Meanwhile,the results by wave propagation of one-dimensional(1D) layered medium equivalent linearization method were added for contrast.The results show that:1) PGA at different depths are obviously amplified compared to the input ground motion,amplification effect of both funnel-shaped depression and upheaval areas(based on the shape of bedrock surface) present especially remarkable.The 2D results indicate that the PGA displays a non-monotonic decreasing with depth and a greater focusing effect of some particular layers,while the 1D results turn out that the PGA decreases with depth,except that PGA at few particular depth increases abruptly; 2) To the funnel-shaped depression areas,PGA amplification effect above 8 m depth shows relatively larger,to the upheaval areas,PGA amplification effect from 15 m to 25 m depth seems more significant.However,the regularities of the PGA amplification effect could hardly be found in the rest areas; 3) It appears a higher regression rate of PGA amplification coefficient with depth when under a smaller input motion; 4) The frequency spectral characteristic of input motion has noticeable effects on PGA amplification tendency.
基金Supported by the Natural Science Foundation of Shandong Province under Grant No ZR2018MA033the National Natural Science Foundation of China under Grant No 11274143
文摘Though the quantum spin Hall effect（QSHE） in two-dimensional（2 D） crystals has been widely explored, the experimental realization of quantum transport properties is only limited to HgTe/CdTe or InAs/GaSb quantum wells. Here we employ a tight-binding model on the basis of d（z^2）, d（xy）, and d（x^2-y^2） orbitals to propose QSHE in the triangular lattice, which are driven by a crossing of electronic bands at the Γ point. Remarkably, 2 D oxidized Mxenes W2 M2 C3 are ideal materials with nontrivial gap of 0.12 eV, facilitating room-temperature observations in experiments. We also find that the nontrivially topological properties of these materials are sensitive to the cooperative effect of the electron correlation and spin-orbit coupling. Due to the feasible exfoliation from its 3 D MAX phase, our work paves a new direction towards realizing QSHE with low dissipation.
基金Supported by the National Basic Research Program of China (Grant No.2019YFA0308403)the National Natural Science Foundation of China (Grant Nos.11822407,11947212,11704348,and NSFC20SC07)+1 种基金the China Postdoctoral Science Foundation (Grant No.2018M640513)the Hong Kong Research Grants Council (Grant Nos.26302118,16305019,and N HKUST626/18)。
文摘The Magnus Hall effect(MHE) is a new type of linear-response Hall effect, recently proposed to appear in two-dimensional(2D) nonmagnetic systems at zero magnetic field in the ballistic limit. The MHE arises from a self-rotating Bloch electron moving under a gradient-electrostatic potential, analogous to the Magnus effect in the macrocosm. Unfortunately, the MHE is usually accompanied by a trivial transverse signal, which hinders its experimental observation. We systematically investigate the material realization and experimental measurement of the MHE, based on symmetry analysis and first-principles calculations. It is found that both the out-ofplane mirror and in-plane two-fold symmetries can neutralize the trivial transverse signal to generate clean MHE signals. We choose two representative 2D materials, monolayer MoS_(2), and bilayer WTe_(2), to study the quantitative dependency of MHE signals on the direction of the electric field. The results are qualitatively consistent with the symmetry analysis, and suggest that an observable MHE signal requires giant Berry curvatures. Our results provide detailed guidance for the future experimental exploration of MHE.
基金supported by the National Natural Science Foundation of China (Grant No.10874049)
文摘The various competing contributions to the anomalous Hall effect in spin-polarized two-dimensional electron gases in the presence of both intrinsic, extrinsic and external electric-field induced spin-orbit coupling were investigated theoretically. Based on a unified semiclassical theoretical approach, it is shown that the total anomalous Hall conductivity can be expressed as the sum of three distinct contributions in the presence of these competing spin-orbit interactions, namely an intrinsic contribution determined by the Berry curvature in the momentum space, an extrinsic contribution determined by the modified Bloch band group velocity and an extrinsic contribution determined by spin-orbit-dependent impurity scattering. The characteristics of these competing contributions are discussed in detail in the paper.
基金Supported by the State Key Development Program for Basic Research of China under Grant No 2016YFA0301501the National Natural Science Foundation of China under Grant Nos 11504328,61475007,11334001 and 91336103
文摘We report the experimental observation of two-dimensional Talbot effect when a resonance plane wave interacts with a two-dimensional atomic density grating generated by standing wave manipulation of ultracold Bose gases. Clear self-images of the grating and sub-images with reversed phase or fractal patterns are observed. By calculating the autocorrelation functions of the images, the behavior of periodic Talbot images is studied. The Talbot effect with two-dimensional atomic density grating expands the applications of the Talbot effect in a wide variety of research fields.
基金supported by the National Key Research and Development Program (No.2016YFA0203900)Innovation Program of Shanghai Municipal Education Commission (No.2021–01–07–00–07-E00077)+1 种基金Shanghai Municipal Science and Technology Commission (No.21DZ1100900)National Natural Science Foundation of China (Nos.51802041,61904032,and 61874154)。
文摘The investigation of two-dimensional(2D)materials has advanced into practical device applications,such as cascaded logic stages.However,incompatible electrical properties and inappropriate logic levels remain enormous challenges.In this work,a doping-free strategy is investigated by top gated(TG)MoS_(2) field-effect transistors(FETs)using various metal gates(Au,Cu,Ag,and Al).These metals with different work functions provide a convenient tuning knob for controlling threshold voltage(V_(th))for MoS_(2) FETs.For instance,the Al electrode can create an extra electron doping(n-doping)behavior in the MoS_(2) TG-FETs due to a dipole effect at the gate-dielectric interface.In this work,by achieving matched electrical properties for the load transistor and the driver transistor in an inverter circuit,we successfully demonstrate wafer-scale MoS_(2) inverter arrays with an optimized inverter switching threshold voltage(V_(M))of 1.5 V and a DC voltage gain of 27 at a supply voltage(V_(DD))of 3 V.This work offers a novel scheme for the fabrication of fully integrated multistage logic circuits based on wafer-scale MoS_(2) film.
文摘By considering the effect of suspended solid particles in the ordinary equations for two-dimension inviscid incompressible mixing layer, the Rayleigh equation and the modified Rayleigh equation are obtained. And then, by solving the corresponding eigen-value equations with numerical computational method, the relation curves between perturbation frequency and spacial growth rate of the mixing layer for the varying particle loading, ratio of particle velocity to fluid velocity and Stokes number are got. Sever al important conclusions on the effect of suspended solid particles on unstability of the mixing layer are presented in the end by analyzing all the relation curves.
基金Project supported by the National Natural Science Foundation of China (Grant Nos.10935004,1126114032,10778613,10575018,40731056,10975012,and 11261140326)
文摘The effects of out-of-plane shear flows on fast magnetic reconnection are numerically investigated by a two- dimensional （2D） hybrid model in an initial Harris sheet equilibrium with flows. The equilibrium and driven shear flows out of the 2D reconnection plane with symmetric and antisymmetric profiles respectively are used in the simulation. It is found that the out-of-plane flows with shears in-plane can change the quadrupolar structure of the out-of-plane magnetic field and, therefore, modify the growth rate of magnetic reconnection. Furthermore, the driven flow varying along the anti-parallel magnetic field can either enhance or reduce the reconnection rate as the direction of flow changes. Secondary islands are also generated in the process with converting the initial X-point into an O-point.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61204085 and 61334002)the Fundamental Research Funds for the Central Universities,China(Grant No.K5051225013)
文摘In this paper, we present a two-dimensional （2D） fully analytical model with consideration of polarization effect for the channel potential and electric field distributions of the gate field-plated high electron mobility transistor （FP-HEMT） on the basis of 2D Poisson＇s solution. The dependences of the channel potential and electric field distributions on drain bias, polarization charge density, FP structure parameters, A1GaN/GaN material parameters, etc. are investigated. A simple and convenient approach to designing high breakdown voltage FP-HEMTs is also proposed. The validity of this model is demonstrated by comparison with the numerical simulations with Silvaco-Atlas. The method in this paper can be extended to the development of other analytical models for different device structures, such as MIS-HEMTs, multiple-FP HETMs, slant-FP HEMTs, etc.
文摘Introduction: We have previously developed an effective atomic number (Zeff) measurement method using linear attenuation coefficients (LACs) obtained by energy-resolved computed tomography (CT) with one-dimensional (1D) detector. The energy-resolved CT was performed with a “transXend” detector, which measured X-rays as electric current and then gave X-ray energy distribution with unfolding analysis using pre-estimated response function (RF). The purpose of this study is to measure Zeff by the energy-resolved CT using a flat panel detector (FPD). Methods: To demonstrate a 2D transXend detector, we developed the stripe absorbers for the FPD. Eleven human tissue-equivalent material rods which were grouped into four material categories were measured by X-rays with 120 kVp tube voltage, 2.3 mA tube current, and 1.0 s exposure time. Zeff is measured by the ratio of LACs with two different pseudo-monochromatic X-ray energies. RFs of each rod material were estimated by numerical calculation. First, we employed the RF estimated for the same rod material (self-RF scenario). Second, we employed the RF estimated for the different rod materials in the same material category (cross-RF scenario). The purpose of the cross-RF scenario was to find representative rod materials in each material category. Results: Upon the self-RF scenario, measured Zeffs were systematically underestimated. Median relative error to theoretical Zeff was -6.92% (range: -7.89% - -4.60%). After normalizing measured Zeffs to the theoretical one for Breast, median relative error improved to -0.75% (range: -1.79% - +1.73%). Upon the cross-RF scenario, the representative rod materials were found in two material categories. Conclusion: Zeff measurements were performed by energy-resolved CT using 2D transXend detector with numerically-estimated RF data. Normalized Zeffs for all rod materials in the self-RF scenario were in good agreement with the theoretical ones.
基金supported by the National Natural Science Foundation of China(Grant Nos.92165206 and 11974330)the Innovation Program for Quantum Science and Technology(Grant No.2021ZD0301603)the Fundamental Research Funds for the Central Universities。
文摘Non-Hermitian Hamiltonians are widely used in describing open systems with gain and loss,among which a key phenomenon is the non-Hermitian skin effect.Here we report an experimental scheme to realize a twodimensional(2D)discrete-time quantum walk with non-Hermitian skin effect in a single trapped ion.It is shown that the coin and 2D walker states can be labeled in the spin of the ion and the coherent-state lattice of the ion motion,respectively.We numerically observe a directional bulk flow,whose orientations are controlled by dissipative parameters,showing the emergence of the non-Hermitian skin effect.We then discuss an experimental implementation of our scheme in a laser-controlled trapped Ca^(+)ion.Our experimental proposal may be applicable to research of dissipative quantum walk systems and may be able to generalize to other platforms,such as superconducting circuits and atoms in cavity.
基金Project supported by the China Postdoctoral Science Foundation (Grant No. 2012M511603)the National Natural Science Foundation of China (Grant Nos. 11105057 and 10775025)+1 种基金the Natural Science Foundation of Hubei Province of China (Grant No. 2007ABA035)the Program for New Century Excellent Talents in University of China (Grant No. NCET-08-0073)
文摘A two-dimensional （2D） fluid model is presented to study the behavior of silicon plasma mixed with SiH4 , N2 , and NH3 in a radio-frequency capacitively coupled plasma （CCP） reactor. The plasma–wall interaction （including the deposition） is modeled by using surface reaction coefficients. In the present paper we try to identify, by numerical simulations, the effect of variations of the process parameters on the plasma properties. It is found from our simulations that by increasing the gas pressure and the discharge gap, the electron density profile shape changes continuously from an edge-high to a center-high, thus the thin films become more uniform. Moreover, as the N2 /NH3 ratio increases from 6/13 to 10/9, the hydrogen content can be significantly decreased, without decreasing the electron density significantly.
基金Project supported by the National Natural Science Foundation Fund for Distinguished Young Scholars(Grant No.52025022)the National Natural Science Foundation of China(Grant Nos.62574038,12474421,62275045,and 12074060)+1 种基金the National Key R&D Program of China(Grant No.2023YFB3610200)the Fund from Jilin Province(Grant Nos.JJKH20241413KJ and 20240601049RC)。
文摘Two-dimensional(2D)transition metal dichalcogenides(TMDs),endowed with exceptional light-matter interaction strength,have become a pivotal platform in advanced optoelectronics,enabling atomically precise control of excitonic phenomena and offering transformative potential for engineering next-generation optoelectronic devices.In contrast to the narrowband absorption characteristics of conventional band-edge excitons,which are limited by the bandgap energy,highenergy excitons not only demonstrate broad momentum matching capability in the ultraviolet regime due to band nesting effects,but also exhibit distinct absorption peak signatures owing to robust excitonic stabilization under 2D confinement.These unique photophysical properties have established such systems as a prominent research frontier in contemporary exciton physics.This review primarily outlines the distinctive physical characteristics of high-energy excitons in TMDs from the perspectives of band structure,excitonic characteristics,and optical properties.Subsequently,we systematically delineate cutting-edge developments in TMD-based photonic devices exploiting high-energy excitonic band-nesting phenomena,with dedicated emphasis on the strategic engineering of nanoscale heterostructures for tailored optoelectronic functionality.Finally,the discussion concludes with an examination of the challenges associated with the design of high-energy exciton devices and their potential future applications.
基金supported by start-up capital of Ningbo Eastern Institute of technology。
文摘The relentless down-scaling of electronics grands the modern integrated circuits(ICs)with the high speed,low power dissipation and low cost,fulfilling diverse demands of modern life.Whereas,with the semiconductor industry entering into sub-10 nm technology nodes,degrading device performance and increasing power consumption give rise to insurmountable roadblocks confronted by modern ICs that need to be conquered to sustain the Moore law's life.Bulk semiconductors like prevalent Si are plagued by seriously degraded carrier mobility as thickness thinning down to sub-5 nm,which is imperative to maintain sufficient gate electrostatic controllability to combat the increasingly degraded short channel effects.Nowadays,the emergence of two-dimensional(2D)materials opens up new gateway to eschew the hurdles laid in front of the scaling trend of modern IC,mainly ascribed to their ultimately atomic thickness,capability to maintain carrier mobility with thickness thinning down,dangling-bonds free surface,wide bandgaps tunability and feasibility to constitute diverse heterostructures.Blossoming breakthroughs in discrete electronic device,such as contact engineering,dielectric integration and vigorous channel-length scaling,or large circuits arrays,as boosted yields,improved variations and full-functioned processor fabrication,based on 2D materials have been achieved nowadays,facilitating 2D materials to step under the spotlight of IC industry to be treated as the most potential future successor or complementary counterpart of incumbent Si to further sustain the down-scaling of modern IC.
