The fabrication of a dynamic threshold-2T0C(DT-2T0C) DRAM cell incorporating a ZnO charge-trap layer in the write transistor has been successfully achieved, addressing the negative hold voltage(V_(HOLD)) issue of conv...The fabrication of a dynamic threshold-2T0C(DT-2T0C) DRAM cell incorporating a ZnO charge-trap layer in the write transistor has been successfully achieved, addressing the negative hold voltage(V_(HOLD)) issue of conventional 2T0C DRAM cells using oxide channel layers. The proposed device facilitates dynamic modulation of turn-on voltage(V_(ON)) through an additional SET operation, allowing V_(ON) to shift above 0 V. The retention time in SET operation was extended to 10^(4) s by optimizing the tunneling layer deposition conditions. The device characterization revealed a significant correlation between V_(ON) and both the WRITE speed and the retention properties of the DT-2T0C, verifying the trade-off between WRITE time and retention time. A long retention time over 1000 s was achieved, even under VHOLD of 0 V.展开更多
As silicon-based transistors face fundamental scaling limits,the search for breakthrough alternatives has led to innovations in 3D architectures,heterogeneous integration,and sub-3 nm semiconductor body thicknesses.Ho...As silicon-based transistors face fundamental scaling limits,the search for breakthrough alternatives has led to innovations in 3D architectures,heterogeneous integration,and sub-3 nm semiconductor body thicknesses.However,the true effectiveness of these advancements lies in the seamless integration of alternative semiconductors tailored for next-generation transistors.In this review,we highlight key advances that enhance both scalability and switching performance by leveraging emerging semiconductor materials.Among the most promising candidates are 2D van der Waals semiconductors,Mott insulators,and amorphous oxide semiconductors,which offer not only unique electrical properties but also low-power operation and high carrier mobility.Additionally,we explore the synergistic interactions between these novel semiconductors and advanced gate dielectrics,including high-K materials,ferroelectrics,and atomically thin hexagonal boron nitride layers.Beyond introducing these novel material configurations,we address critical challenges such as leakage current and long-term device reliability,which become increasingly crucial as transistors scale down to atomic dimensions.Through concrete examples showcasing the potential of these materials in transistors,we provide key insights into overcoming fundamental obstacles—such as device reliability,scaling down limitations,and extended applications in artificial intelligence—ultimately paving the way for the development of future transistor technologies.展开更多
In this work,we demonstrated the InSnO(ITO)TFTs passivated with SiO_(2)via the PECVD process compatible with large-area production for the first time.The passivated ITO TFTs with various channel thicknesses(t_(ch)=4,5...In this work,we demonstrated the InSnO(ITO)TFTs passivated with SiO_(2)via the PECVD process compatible with large-area production for the first time.The passivated ITO TFTs with various channel thicknesses(t_(ch)=4,5,6 nm)exhibit excellent electrical performance and superior uniformity.The reliability properties of ITO TFTs were evaluated in detail under positive bias stress(PBS)conditions before and after passivation.Compared to the devices without passivation,the passivated devices have only 50%threshold voltage degradation(ΔV_(th))and 50%newly generated traps due to excellent isolation of the ambient atmosphere.The negligible performance degradation of ITO TFTs with passivation during negative bias stress(NBS)and negative bias temperature stress(NBTS)verifies the outstanding immunity to the water vapor of the SiO_(2)passivation layer.Overall,the ITO TFT with the t_(ch)of 6 nm and with SiO_(2)passivation exhibits the best performance in terms of electrical properties,uniformity,and reliability,which is promising in large-area production.展开更多
Field-effect nanofluidic transistors(FENTs),biomimicking the structure and functionality of neuron,act as biological transistors with the ability to gate switching responses to external stimuli.The switching ratio has...Field-effect nanofluidic transistors(FENTs),biomimicking the structure and functionality of neuron,act as biological transistors with the ability to gate switching responses to external stimuli.The switching ratio has been verified to evaluate the performance of FENTs,but until recently,the response time,another crucial indicator,has been ignored.Employing finite-element method,we investigated the relationship among gate charge,switching ratio and response time by divisionally manipulating gate charge,including entrance surface and the surface of confinement space,for ion transport to optimize switching capability.The dual-split gate charge on FENTs exhibits synergistic effect on switching response.Based on the two regional gate charge on FENTs,multivalence ions in lower concentration,high aspect ratio and single channel show higher switching ratio but longer response time compared to monovalent ions.The findings highlight the necessity of balancing these two signals in FENTs and offer insights for optimizing their design and expanding applications to dual-signal-detection iontronics.展开更多
Glucose,ascorbic acid(AA),uric acid(UA),and dopamine(DA)are vital biomarkers whose dynamic concentrations correlate with critical diseases;however,multiplexed detection remains challenging for conventional electrochem...Glucose,ascorbic acid(AA),uric acid(UA),and dopamine(DA)are vital biomarkers whose dynamic concentrations correlate with critical diseases;however,multiplexed detection remains challenging for conventional electrochemical sensors because of their limited sensitivity and selectivity.Here,we present a millimeter-scale all-poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)(PEDOT:PSS)organic electrochemical transistor(OECT)platform that integrates dual-mode sensing with enzyme/metal-free operation for ultrasensitive biomarker monitoring.By engineering polycrystalline PEDOT:PSS channels via H_2 SO_4 post-treatment,the device achieves record-high conductivity(about(2312.0±29.9)S·cm^(–1)),maximum transconductance(about(2.82±0.12)mS),and on/off ratio(about 210.0±7.8),enabling signal amplification at low gate voltages.The dual-mode strategy combines the selectivity of electrochemistry with the sensitivity of OECTs,realizing simultaneous detection of glucose,AA,UA,and DA with clinical-level sensitivity:detection limits down to 8 nmol·L^(–1)(glucose),0.5 nmol·L^(–1)(AA),5 nmol·L^(–1)(DA),and 0.5 nmol·L^(–1)(UA).Validation using human urine samples yielded recovery rates of 94%–114%.This flexible sensing platform provides a new pathway for the development of wearable biosensors for precision diagnostics.展开更多
The goal of this paper is to investigate the long-time dynamics of solutions to a Kirchhoff type suspension bridge equation with nonlinear damping and memory term.For this problem we establish the well-posedness and e...The goal of this paper is to investigate the long-time dynamics of solutions to a Kirchhoff type suspension bridge equation with nonlinear damping and memory term.For this problem we establish the well-posedness and existence of uniform attractor under some suitable assumptions on the nonlinear term g(u),the nonlinear damping f(u_(t))and the external force h(x,t).Specifically,the asymptotic compactness of the semigroup is verified by the energy reconstruction method.展开更多
GABA_(A) receptors containingα5-subunits(GABA_(A)R-α5)cluster at both extrasynaptic and synaptic locations,interacting with the scaffold proteins radixin and gephyrin,respectively,and the re-localization of GABA_(A...GABA_(A) receptors containingα5-subunits(GABA_(A)R-α5)cluster at both extrasynaptic and synaptic locations,interacting with the scaffold proteins radixin and gephyrin,respectively,and the re-localization of GABA_(A)R-α5 influences GABAergic transmission.Here,we found that when early spatial memory deficits occurred in aged mice at 24 h after sevoflurane anesthesia,there was a re-localization of GABA_(A)R-α5 that enhanced tonic inhibition and reduced the decay kinetics of miniature inhibitory postsynaptic currents in the hippocampal CA1 region.Mechanistically,increased phosphorylation of radixin at threonine 564(Thr564)mediates the re-localization of GABA_(A)R-α5.Acute treatment with the selective extrasynaptic GABA_(A)R-α5 antagonist S44819 restored the GABA_(A)R-α5-mediated inhibitory currents by reversing radixin phosphorylation-dependent GABA_(A)R-α5 re-localization,then improved the sevoflurane-induced spatial memory impairment in aged mice.Our results suggest that the localization of GABA_(A)R-α5 altered by sevoflurane is linked to unbalanced GABAergic transmission,which induces early memory impairment in aged mice.Modulating the GABA_(A)R-α5 localization might be a novel strategy to improve memory after sevoflurane exposure.展开更多
Doping in thin-film transistors(TFTs) plays a crucial role in tailoring material properties to enhance device performance, making them essential for advanced electronic applications. This study explores the synthesis ...Doping in thin-film transistors(TFTs) plays a crucial role in tailoring material properties to enhance device performance, making them essential for advanced electronic applications. This study explores the synthesis and characterization of TFTs fabricated using nickel(Ni)-doped indium oxide(In_(2)O_(3)) via a wet-chemical approach. The presented work investigates the effect of "Ni" incorporation in In_(2)O_(3) on the structural and electrical transport properties of In_(2)O_(3), revealing that higher "Ni" content decreases the oxygen vacancies, leading to a reduction in leakage current and a forward shift in threshold potential(V_(th)).Experimental findings reveal that Ni In O-based TFTs(with Ni = 0.5%) showcase enhanced electrical performance, achieving mobility of 7.54 cm^(2)/(V·s), an impressive ON/OFF current ratio of ~10^(7), a V_(th) of 6.26 V, reduced interfacial trap states(D_(it)) of 8.23 ×10^(12) cm^(-2) and enhanced biased stress stability. The efficacy of "Ni" incorporation is attributed to the upgraded Lewis acidity, stable Ni-O bond strength, and small ionic radius of Ni. Negative bias illumination stability(NBIS) measurements further indicate that device stability diminishes with shorter light wavelengths, likely due to the activation of oxygen vacancies. These findings validate the solution-processed techniques' potential for future large-scale, low-cost, energy-efficient, and high-performance electronics.展开更多
The highly dynamic nature,strong uncertainty,and coupled multiple safety constraints inherent in carrier aircraft recovery operations pose severe challenges for real-time decision-making.Addressing bolter scenarios,th...The highly dynamic nature,strong uncertainty,and coupled multiple safety constraints inherent in carrier aircraft recovery operations pose severe challenges for real-time decision-making.Addressing bolter scenarios,this study proposes an intelligent decision-making framework based on a deep long short-term memory Q-network.This framework transforms the real-time sequencing for bolter recovery problem into a partially observable Markov decision process.It employs a stacked long shortterm memory network to accurately capture the long-range temporal dependencies of bolter event chains and fuel consumption.Furthermore,it integrates a prioritized experience replay training mechanism to construct a safe and adaptive scheduling system capable of millisecond-level real-time decision-making.Experimental demonstrates that,within large-scale mass recovery scenarios,the framework achieves zero safety violations in static environments and maintains a fuel safety violation rate below 10%in dynamic scenarios,with single-step decision times at the millisecond level.The model exhibits strong generalization capability,effectively responding to unforeseen emergent situations—such as multiple bolters and fuel emergencies—without requiring retraining.This provides robust support for efficient carrier-based aircraft recovery operations.展开更多
Abstract In this study, a kind of fluorinated copolyfluorene, named poly[（4-（octyloxy）-9,9-diphenylfluorene-2,7-diyl）-alt- （2,3,5,6-tetrafluoro-1,4-phenylene）] （PODPF-TFP）, is synthesized by facile palladium-b...Abstract In this study, a kind of fluorinated copolyfluorene, named poly[（4-（octyloxy）-9,9-diphenylfluorene-2,7-diyl）-alt- （2,3,5,6-tetrafluoro-1,4-phenylene）] （PODPF-TFP）, is synthesized by facile palladium-based direct aromatization. Compared to the non-fluorinated counterpart, poly[（4-（octyloxy）-9,9-diphenylfluorene-2,7-diyl）-alt-（p-phenylene）] （PODPF-P）, deeper HOMO/LUMO energy level combined with steric hindrance effect endow PODPF-TFP with excellent spectra and morphology stability. Finally, organic field-effect transistor （OFET） memory devices are fabricated with PODPF-P/PODPF- TFP as the dielectric layers, and they both exhibit flash type storage characteristic. Owing to the electronegativity of fluorine atom, the device based on PODPF-TFP exhibits larger memory window and more stable Ion/Ioff ratio during a retention time of 10^4 s as well as a better aging stability. The present study suggests that fluorinated p-n copolyfluorene electrets could enhance the capabilities of charge trapping and storage, which are promising for OFET memory devices.展开更多
Organic ferroelectric memory devices based on field effect transistors that can be configured between two stable states of on and off have been widely researched as the next generation data storage media in recent yea...Organic ferroelectric memory devices based on field effect transistors that can be configured between two stable states of on and off have been widely researched as the next generation data storage media in recent years.This emerging type of memory devices can lead to a new instrument system as a potential alternative to previous non-volatile memory building blocks in future processing units because of their numerous merits such as cost-effective process,simple structure and freedom in substrate choices.This bi-stable non-volatile memory device of information storage has been investigated using several organic or inorganic semiconductors with organic ferroelectric polymer materials.Recent progresses in this ferroelectric memory field,hybrid system have attracted a lot of attention due to their excellent device performance in comparison with that of all organic systems.In this paper,a general review of this type of ferroelectric non-volatile memory is provided,which include the device structure,organic ferroelectric materials,electrical characteristics and working principles.We also present some snapshots of our previous study on hybrid ferroelectric memories including our recent work based on zinc oxide nanowire channels.展开更多
A facile approach was demonstrated for fabricating high-performance nonvolatile memory devices based on ferroelectric-gate field effect transistors using a p-type Si nanowire coated with omega-shaped gate organic ferr...A facile approach was demonstrated for fabricating high-performance nonvolatile memory devices based on ferroelectric-gate field effect transistors using a p-type Si nanowire coated with omega-shaped gate organic ferroelectric poly(vinylidene fluoride-trifluoroethylene)(P(VDF-Tr FE)). We overcame the interfacial layer problem by incorporating P(VDF-Tr FE) as a ferroelectric gate using a low-temperature fabrication process. Our memory devices exhibited excellent memory characteristics with a low programming voltage of ±5 V, a large modulation in channel conductance between ON and OFF states exceeding 105, a long retention time greater than 3 9 104 s, and a high endurance of over 105 programming cycles while maintaining an ION/IOFFratio higher than 102.展开更多
In this study,we present an organic field-effect transistor floating-gate memory using polysilicon(poly-Si)as a charge trapping layer.The memory device is fabricated on a N^+-Si/SiO2 substrate.Poly-Si,polymethylmethac...In this study,we present an organic field-effect transistor floating-gate memory using polysilicon(poly-Si)as a charge trapping layer.The memory device is fabricated on a N^+-Si/SiO2 substrate.Poly-Si,polymethylmethacrylate,and pentacene are used as a floating-gate layer,tunneling layer,and active layer,respectively.The device shows bidirectional storage characteristics under the action of programming/erasing(P/E)operation due to the supplied electrons and holes in the channel and the bidirectional charge trapping characteristic of the poly-Si floating-gate.The carrier mobility and switching current ratio(Ion/Ioff ratio)of the device with a tunneling layer thickness of 85 nm are 0.01 cm^2·V^-1·s^-1 and 102,respectively.A large memory window of 9.28 V can be obtained under a P/E voltage of±60 V.展开更多
Amorphous In–Ga–Zn–O(a-IGZO)thin-film transistor(TFT)memories with novel p-SnO/n-SnO_(2) heterojunction charge trapping stacks(CTSs)are investigated comparatively under a maximum fabrication temperature of 280℃.Co...Amorphous In–Ga–Zn–O(a-IGZO)thin-film transistor(TFT)memories with novel p-SnO/n-SnO_(2) heterojunction charge trapping stacks(CTSs)are investigated comparatively under a maximum fabrication temperature of 280℃.Compared to a single p-SnO or n-SnO_(2) charge trapping layer(CTL),the heterojunction CTSs can achieve electrically programmable and erasable characteristics as well as good data retention.Of the two CTSs,the tunneling layer/p-SnO/nSnO_(2)/blocking layer architecture demonstrates much higher program efficiency,more robust data retention,and comparably superior erase characteristics.The resulting memory window is as large as 6.66 V after programming at 13 V/1 ms and erasing at-8 V/1 ms,and the ten-year memory window is extrapolated to be 4.41 V.This is attributed to shallow traps in p-SnO and deep traps in n-SnO_(2),and the formation of a built-in electric field in the heterojunction.展开更多
Flexible electronics are transforming our lives by making daily activities more convenient.Central to this innovation are field-effect transistors(FETs),valued for their efficient signal processing,nanoscale fabricati...Flexible electronics are transforming our lives by making daily activities more convenient.Central to this innovation are field-effect transistors(FETs),valued for their efficient signal processing,nanoscale fabrication,low-power consumption,fast response times,and versatility.Graphene,known for its exceptional mechanical properties,high electron mobility,and biocompatibility,is an ideal material for FET channels and sensors.The combination of graphene and FETs has given rise to flexible graphene field-effect transistors(FGFETs),driving significant advances in flexible electronics and sparked a strong interest in flexible biomedical sensors.Here,we first provide a brief overview of the basic structure,operating mechanism,and evaluation parameters of FGFETs,and delve into their material selection and patterning techniques.The ability of FGFETs to sense strains and biomolecular charges opens up diverse application possibilities.We specifically analyze the latest strategies for integrating FGFETs into wearable and implantable flexible biomedical sensors,focusing on the key aspects of constructing high-quality flexible biomedical sensors.Finally,we discuss the current challenges and prospects of FGFETs and their applications in biomedical sensors.This review will provide valuable insights and inspiration for ongoing research to improve the quality of FGFETs and broaden their application prospects in flexible biomedical sensing.展开更多
The rapid growth of artificial intelligence has accelerated data generation,which increasingly exposes the limitations faced by traditional computational architectures,particularly in terms of energy consumption and d...The rapid growth of artificial intelligence has accelerated data generation,which increasingly exposes the limitations faced by traditional computational architectures,particularly in terms of energy consumption and data latency.In contrast,data-centric computing that integrates processing and storage has the potential of reducing latency and energy usage.Organic optoelectronic synaptic transistors have emerged as one type of promising devices to implement the data-centric com-puting paradigm owing to their superiority of flexibility,low cost,and large-area fabrication.However,sophisticated functions including vector-matrix multiplication that a single device can achieve are limited.Thus,the fabrication and utilization of organic optoelectronic synaptic transistor arrays(OOSTAs)are imperative.Here,we summarize the recent advances in OOSTAs.Various strategies for manufacturing OOSTAs are introduced,including coating and casting,physical vapor deposition,printing,and photolithography.Furthermore,innovative applications of the OOSTA system integration are discussed,including neuromor-phic visual systems and neuromorphic computing systems.At last,challenges and future perspectives of utilizing OOSTAs in real-world applications are discussed.展开更多
Photonic platforms are gradually emerging as a promising option to encounter the ever-growing demand for artificial intelligence,among which photonic time-delay reservoir computing(TDRC)is widely anticipated.While suc...Photonic platforms are gradually emerging as a promising option to encounter the ever-growing demand for artificial intelligence,among which photonic time-delay reservoir computing(TDRC)is widely anticipated.While such a computing paradigm can only employ a single photonic device as the nonlinear node for data processing,the performance highly relies on the fading memory provided by the delay feedback loop(FL),which sets a restriction on the extensibility of physical implementation,especially for highly integrated chips.Here,we present a simplified photonic scheme for more flexible parameter configurations leveraging the designed quasi-convolution coding(QC),which completely gets rid of the dependence on FL.Unlike delay-based TDRC,encoded data in QC-based RC(QRC)enables temporal feature extraction,facilitating augmented memory capabilities.Thus,our proposed QRC is enabled to deal with time-related tasks or sequential data without the implementation of FL.Furthermore,we can implement this hardware with a low-power,easily integrable vertical-cavity surface-emitting laser for high-performance parallel processing.We illustrate the concept validation through simulation and experimental comparison of QRC and TDRC,wherein the simpler-structured QRC outperforms across various benchmark tasks.Our results may underscore an auspicious solution for the hardware implementation of deep neural networks.展开更多
Hippocampal neuronal loss causes cognitive dysfunction in Alzheimer’s disease.Adult hippocampal neurogenesis is reduced in patients with Alzheimer’s disease.Exercise stimulates adult hippocampal neurogenesis in rode...Hippocampal neuronal loss causes cognitive dysfunction in Alzheimer’s disease.Adult hippocampal neurogenesis is reduced in patients with Alzheimer’s disease.Exercise stimulates adult hippocampal neurogenesis in rodents and improves memory and slows cognitive decline in patients with Alzheimer’s disease.However,the molecular pathways for exercise-induced adult hippocampal neurogenesis and improved cognition in Alzheimer’s disease are poorly understood.Recently,regulator of G protein signaling 6(RGS6)was identified as the mediator of voluntary running-induced adult hippocampal neurogenesis in mice.Here,we generated novel RGS6fl/fl;APP_(SWE) mice and used retroviral approaches to examine the impact of RGS6 deletion from dentate gyrus neuronal progenitor cells on voluntary running-induced adult hippocampal neurogenesis and cognition in an amyloid-based Alzheimer’s disease mouse model.We found that voluntary running in APP_(SWE) mice restored their hippocampal cognitive impairments to that of control mice.This cognitive rescue was abolished by RGS6 deletion in dentate gyrus neuronal progenitor cells,which also abolished running-mediated increases in adult hippocampal neurogenesis.Adult hippocampal neurogenesis was reduced in sedentary APP_(SWE) mice versus control mice,with basal adult hippocampal neurogenesis reduced by RGS6 deletion in dentate gyrus neural precursor cells.RGS6 was expressed in neurons within the dentate gyrus of patients with Alzheimer’s disease with significant loss of these RGS6-expressing neurons.Thus,RGS6 mediated voluntary running-induced rescue of impaired cognition and adult hippocampal neurogenesis in APP_(SWE) mice,identifying RGS6 in dentate gyrus neural precursor cells as a possible therapeutic target in Alzheimer’s disease.展开更多
The active development of space industry necessitates the cre-ation of novel materials with unique properties,including shape memory alloys(SMAs).The development of ultra-high temperature SMAs(UHTSMAs)with operating t...The active development of space industry necessitates the cre-ation of novel materials with unique properties,including shape memory alloys(SMAs).The development of ultra-high temperature SMAs(UHTSMAs)with operating temperatures above 400℃is a significant challenge[1-3].It is known that reversible thermoelas-tic martensitic transformation(MT)is the basis for shape mem-ory behavior[4].Currently,there are several systems in which MT temperatures meet the above requirements,for example,RuNb[5],HfPd[6],TiPd[7].展开更多
The traditional von Neumann architecture has demonstrated inefficiencies in parallel computing and adaptive learn-ing,rendering it incapable of meeting the growing demand for efficient and high-speed computing.Neuromo...The traditional von Neumann architecture has demonstrated inefficiencies in parallel computing and adaptive learn-ing,rendering it incapable of meeting the growing demand for efficient and high-speed computing.Neuromorphic comput-ing with significant advantages such as high parallelism and ultra-low power consumption is regarded as a promising pathway to overcome the limitations of conventional computers and achieve the next-generation artificial intelligence.Among various neuromorphic devices,the artificial synapses based on electrolyte-gated transistors stand out due to their low energy consump-tion,multimodal sensing/recording capabilities,and multifunctional integration.Moreover,the emerging optoelectronic neuro-morphic devices which combine the strengths of photonics and electronics have demonstrated substantial potential in the neu-romorphic computing field.Therefore,this article reviews recent advancements in electrolyte-gated optoelectronic neuromor-phic transistors.First,it provides an overview of artificial optoelectronic synapses and neurons,discussing aspects such as device structures,operating mechanisms,and neuromorphic functionalities.Next,the potential applications of optoelectronic synapses in different areas such as artificial visual system,pain system,and tactile perception systems are elaborated.Finally,the current challenges are summarized,and future directions for their developments are proposed.展开更多
基金supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (RS-2024-00334190)。
文摘The fabrication of a dynamic threshold-2T0C(DT-2T0C) DRAM cell incorporating a ZnO charge-trap layer in the write transistor has been successfully achieved, addressing the negative hold voltage(V_(HOLD)) issue of conventional 2T0C DRAM cells using oxide channel layers. The proposed device facilitates dynamic modulation of turn-on voltage(V_(ON)) through an additional SET operation, allowing V_(ON) to shift above 0 V. The retention time in SET operation was extended to 10^(4) s by optimizing the tunneling layer deposition conditions. The device characterization revealed a significant correlation between V_(ON) and both the WRITE speed and the retention properties of the DT-2T0C, verifying the trade-off between WRITE time and retention time. A long retention time over 1000 s was achieved, even under VHOLD of 0 V.
基金supported by the National Research Foundation of Korea(NRF)funded by the Ministry of Science and ICT(MSIT),South Korea(RS-2024-00421181)financially supported in part by National R&D Program(2021M3H4A3A02086430)through NRF(National Research Foundation of Korea)funded by Ministry of Science and ICT+2 种基金the National Research Council of Science&Technology(NST)grant by the Korea government(MSIT)(No.GTL25021-210)The Inter-University Semiconductor Research Center,Institute of Engineering Research,and Soft Foundry Institute at Seoul National University provided research facilities for this workhe grant by the National Research Foundation of Korea(NSF)supported by the Korea government(MIST)(RS-2025-16903034)。
文摘As silicon-based transistors face fundamental scaling limits,the search for breakthrough alternatives has led to innovations in 3D architectures,heterogeneous integration,and sub-3 nm semiconductor body thicknesses.However,the true effectiveness of these advancements lies in the seamless integration of alternative semiconductors tailored for next-generation transistors.In this review,we highlight key advances that enhance both scalability and switching performance by leveraging emerging semiconductor materials.Among the most promising candidates are 2D van der Waals semiconductors,Mott insulators,and amorphous oxide semiconductors,which offer not only unique electrical properties but also low-power operation and high carrier mobility.Additionally,we explore the synergistic interactions between these novel semiconductors and advanced gate dielectrics,including high-K materials,ferroelectrics,and atomically thin hexagonal boron nitride layers.Beyond introducing these novel material configurations,we address critical challenges such as leakage current and long-term device reliability,which become increasingly crucial as transistors scale down to atomic dimensions.Through concrete examples showcasing the potential of these materials in transistors,we provide key insights into overcoming fundamental obstacles—such as device reliability,scaling down limitations,and extended applications in artificial intelligence—ultimately paving the way for the development of future transistor technologies.
基金supported in part by the National Natural Science Foundation of China(62404110,62274033)Natural Science Foundation of Jiangsu Province(BK20221453)+1 种基金Fundamental Research Funds for the Central UniversitiesNatural Science Research Start-up Foundation of Recruiting Talents of Nanjing University of Posts and Telecommunications(NY223159)。
文摘In this work,we demonstrated the InSnO(ITO)TFTs passivated with SiO_(2)via the PECVD process compatible with large-area production for the first time.The passivated ITO TFTs with various channel thicknesses(t_(ch)=4,5,6 nm)exhibit excellent electrical performance and superior uniformity.The reliability properties of ITO TFTs were evaluated in detail under positive bias stress(PBS)conditions before and after passivation.Compared to the devices without passivation,the passivated devices have only 50%threshold voltage degradation(ΔV_(th))and 50%newly generated traps due to excellent isolation of the ambient atmosphere.The negligible performance degradation of ITO TFTs with passivation during negative bias stress(NBS)and negative bias temperature stress(NBTS)verifies the outstanding immunity to the water vapor of the SiO_(2)passivation layer.Overall,the ITO TFT with the t_(ch)of 6 nm and with SiO_(2)passivation exhibits the best performance in terms of electrical properties,uniformity,and reliability,which is promising in large-area production.
基金supported by the Natural Science Foundation of Guangdong Province,China (No.2025A1515011654)the National Natural Science Foundation of China (No.22090053)+3 种基金the Fundamental Research Funds for National Universities,China University of Geosciences (Wuhan)support from the program of China Scholarships Council (No.202406410155)Young Elite Scientists Sponsorship Program by CAST-Doctoral Student Special Plansupport from the S&T Special Program of Huzhou (No.2024GZ07)。
文摘Field-effect nanofluidic transistors(FENTs),biomimicking the structure and functionality of neuron,act as biological transistors with the ability to gate switching responses to external stimuli.The switching ratio has been verified to evaluate the performance of FENTs,but until recently,the response time,another crucial indicator,has been ignored.Employing finite-element method,we investigated the relationship among gate charge,switching ratio and response time by divisionally manipulating gate charge,including entrance surface and the surface of confinement space,for ion transport to optimize switching capability.The dual-split gate charge on FENTs exhibits synergistic effect on switching response.Based on the two regional gate charge on FENTs,multivalence ions in lower concentration,high aspect ratio and single channel show higher switching ratio but longer response time compared to monovalent ions.The findings highlight the necessity of balancing these two signals in FENTs and offer insights for optimizing their design and expanding applications to dual-signal-detection iontronics.
基金financially supported by the National Natural Science Foundation of China(Nos.52272214,52372082,52466013,52373184,and U24A20660)Jiangxi Provincial Natural Science Foundation(Nos.20242BAB26059,20232BAB204032,20252BAC200290,20252BEJ730349,and 20252BAC240326)Doctoral Start-Up Fund of Jiangxi Science&Technology Normal University(No.2024BSQD16)。
文摘Glucose,ascorbic acid(AA),uric acid(UA),and dopamine(DA)are vital biomarkers whose dynamic concentrations correlate with critical diseases;however,multiplexed detection remains challenging for conventional electrochemical sensors because of their limited sensitivity and selectivity.Here,we present a millimeter-scale all-poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)(PEDOT:PSS)organic electrochemical transistor(OECT)platform that integrates dual-mode sensing with enzyme/metal-free operation for ultrasensitive biomarker monitoring.By engineering polycrystalline PEDOT:PSS channels via H_2 SO_4 post-treatment,the device achieves record-high conductivity(about(2312.0±29.9)S·cm^(–1)),maximum transconductance(about(2.82±0.12)mS),and on/off ratio(about 210.0±7.8),enabling signal amplification at low gate voltages.The dual-mode strategy combines the selectivity of electrochemistry with the sensitivity of OECTs,realizing simultaneous detection of glucose,AA,UA,and DA with clinical-level sensitivity:detection limits down to 8 nmol·L^(–1)(glucose),0.5 nmol·L^(–1)(AA),5 nmol·L^(–1)(DA),and 0.5 nmol·L^(–1)(UA).Validation using human urine samples yielded recovery rates of 94%–114%.This flexible sensing platform provides a new pathway for the development of wearable biosensors for precision diagnostics.
基金Supported by the National Natural Science Foundation of China(Grant Nos.11961059,1210502)the University Innovation Project of Gansu Province(Grant No.2023B-062)the Gansu Province Basic Research Innovation Group Project(Grant No.23JRRA684).
文摘The goal of this paper is to investigate the long-time dynamics of solutions to a Kirchhoff type suspension bridge equation with nonlinear damping and memory term.For this problem we establish the well-posedness and existence of uniform attractor under some suitable assumptions on the nonlinear term g(u),the nonlinear damping f(u_(t))and the external force h(x,t).Specifically,the asymptotic compactness of the semigroup is verified by the energy reconstruction method.
基金supported by the Tianjin Scientific Research Start-up Foundation for Talent Introduction(2021-1-10)the 14th Five-Year Plan Peak Discipline Support Plan of Tianjin Medical University Cancer Institute and Hospital(7-2-13)+3 种基金National Natural Science Foundation of China(82171221),Beijing Bethune Charitable Foundation(YXJL-2024-0778-0030)Beijing Science and Technology Innovation Medical Development Foundation(KC2024-JF-0069)Tianjin Medical University Postgraduate Education Reform Research Program(TMUYY02)Tianjin Key Medical Discipline(Specialty)Construction(TJYXZDXK-009A).
文摘GABA_(A) receptors containingα5-subunits(GABA_(A)R-α5)cluster at both extrasynaptic and synaptic locations,interacting with the scaffold proteins radixin and gephyrin,respectively,and the re-localization of GABA_(A)R-α5 influences GABAergic transmission.Here,we found that when early spatial memory deficits occurred in aged mice at 24 h after sevoflurane anesthesia,there was a re-localization of GABA_(A)R-α5 that enhanced tonic inhibition and reduced the decay kinetics of miniature inhibitory postsynaptic currents in the hippocampal CA1 region.Mechanistically,increased phosphorylation of radixin at threonine 564(Thr564)mediates the re-localization of GABA_(A)R-α5.Acute treatment with the selective extrasynaptic GABA_(A)R-α5 antagonist S44819 restored the GABA_(A)R-α5-mediated inhibitory currents by reversing radixin phosphorylation-dependent GABA_(A)R-α5 re-localization,then improved the sevoflurane-induced spatial memory impairment in aged mice.Our results suggest that the localization of GABA_(A)R-α5 altered by sevoflurane is linked to unbalanced GABAergic transmission,which induces early memory impairment in aged mice.Modulating the GABA_(A)R-α5 localization might be a novel strategy to improve memory after sevoflurane exposure.
基金funded by the research startup funding of National Research Foundation (NRF) of Korea through the Ministry of Science and ICT 2022R1G1A1009887Part of this study was supported by research start-up funding of Anhui University (S202418001/078)。
文摘Doping in thin-film transistors(TFTs) plays a crucial role in tailoring material properties to enhance device performance, making them essential for advanced electronic applications. This study explores the synthesis and characterization of TFTs fabricated using nickel(Ni)-doped indium oxide(In_(2)O_(3)) via a wet-chemical approach. The presented work investigates the effect of "Ni" incorporation in In_(2)O_(3) on the structural and electrical transport properties of In_(2)O_(3), revealing that higher "Ni" content decreases the oxygen vacancies, leading to a reduction in leakage current and a forward shift in threshold potential(V_(th)).Experimental findings reveal that Ni In O-based TFTs(with Ni = 0.5%) showcase enhanced electrical performance, achieving mobility of 7.54 cm^(2)/(V·s), an impressive ON/OFF current ratio of ~10^(7), a V_(th) of 6.26 V, reduced interfacial trap states(D_(it)) of 8.23 ×10^(12) cm^(-2) and enhanced biased stress stability. The efficacy of "Ni" incorporation is attributed to the upgraded Lewis acidity, stable Ni-O bond strength, and small ionic radius of Ni. Negative bias illumination stability(NBIS) measurements further indicate that device stability diminishes with shorter light wavelengths, likely due to the activation of oxygen vacancies. These findings validate the solution-processed techniques' potential for future large-scale, low-cost, energy-efficient, and high-performance electronics.
基金supported by the National Natural Science Foundation of China(Grant No.62403486)。
文摘The highly dynamic nature,strong uncertainty,and coupled multiple safety constraints inherent in carrier aircraft recovery operations pose severe challenges for real-time decision-making.Addressing bolter scenarios,this study proposes an intelligent decision-making framework based on a deep long short-term memory Q-network.This framework transforms the real-time sequencing for bolter recovery problem into a partially observable Markov decision process.It employs a stacked long shortterm memory network to accurately capture the long-range temporal dependencies of bolter event chains and fuel consumption.Furthermore,it integrates a prioritized experience replay training mechanism to construct a safe and adaptive scheduling system capable of millisecond-level real-time decision-making.Experimental demonstrates that,within large-scale mass recovery scenarios,the framework achieves zero safety violations in static environments and maintains a fuel safety violation rate below 10%in dynamic scenarios,with single-step decision times at the millisecond level.The model exhibits strong generalization capability,effectively responding to unforeseen emergent situations—such as multiple bolters and fuel emergencies—without requiring retraining.This provides robust support for efficient carrier-based aircraft recovery operations.
基金financially supported by the National Natural Science Funds for Excellent Young Scholar (No.21322402)the National Natural Science Foundation of China (Nos.21274064, 61475074, 21504041 and 61136003)+4 种基金University of Jiangsu Province Natural Science Foundation Project (No.14KJB510027)Natural Science Foundation of Jiangsu Province (No.BM2012010)Synergetic Innovation Center for Organic Electronics and Information DisplaysNatural Science of the Education Committee of Jiangsu Province (No.15KJB430019)Jiangsu Planned Projects for Postdoctoral Research Funds (No.1501019B)
文摘Abstract In this study, a kind of fluorinated copolyfluorene, named poly[（4-（octyloxy）-9,9-diphenylfluorene-2,7-diyl）-alt- （2,3,5,6-tetrafluoro-1,4-phenylene）] （PODPF-TFP）, is synthesized by facile palladium-based direct aromatization. Compared to the non-fluorinated counterpart, poly[（4-（octyloxy）-9,9-diphenylfluorene-2,7-diyl）-alt-（p-phenylene）] （PODPF-P）, deeper HOMO/LUMO energy level combined with steric hindrance effect endow PODPF-TFP with excellent spectra and morphology stability. Finally, organic field-effect transistor （OFET） memory devices are fabricated with PODPF-P/PODPF- TFP as the dielectric layers, and they both exhibit flash type storage characteristic. Owing to the electronegativity of fluorine atom, the device based on PODPF-TFP exhibits larger memory window and more stable Ion/Ioff ratio during a retention time of 10^4 s as well as a better aging stability. The present study suggests that fluorinated p-n copolyfluorene electrets could enhance the capabilities of charge trapping and storage, which are promising for OFET memory devices.
文摘Organic ferroelectric memory devices based on field effect transistors that can be configured between two stable states of on and off have been widely researched as the next generation data storage media in recent years.This emerging type of memory devices can lead to a new instrument system as a potential alternative to previous non-volatile memory building blocks in future processing units because of their numerous merits such as cost-effective process,simple structure and freedom in substrate choices.This bi-stable non-volatile memory device of information storage has been investigated using several organic or inorganic semiconductors with organic ferroelectric polymer materials.Recent progresses in this ferroelectric memory field,hybrid system have attracted a lot of attention due to their excellent device performance in comparison with that of all organic systems.In this paper,a general review of this type of ferroelectric non-volatile memory is provided,which include the device structure,organic ferroelectric materials,electrical characteristics and working principles.We also present some snapshots of our previous study on hybrid ferroelectric memories including our recent work based on zinc oxide nanowire channels.
基金supported by Center for BioNano Health-Guardfunded by the Ministry of Science, ICT & Future Planning (MSIP) of Korea as a Global Frontier Project (HGUARD_2013M3A6B2)
文摘A facile approach was demonstrated for fabricating high-performance nonvolatile memory devices based on ferroelectric-gate field effect transistors using a p-type Si nanowire coated with omega-shaped gate organic ferroelectric poly(vinylidene fluoride-trifluoroethylene)(P(VDF-Tr FE)). We overcame the interfacial layer problem by incorporating P(VDF-Tr FE) as a ferroelectric gate using a low-temperature fabrication process. Our memory devices exhibited excellent memory characteristics with a low programming voltage of ±5 V, a large modulation in channel conductance between ON and OFF states exceeding 105, a long retention time greater than 3 9 104 s, and a high endurance of over 105 programming cycles while maintaining an ION/IOFFratio higher than 102.
文摘In this study,we present an organic field-effect transistor floating-gate memory using polysilicon(poly-Si)as a charge trapping layer.The memory device is fabricated on a N^+-Si/SiO2 substrate.Poly-Si,polymethylmethacrylate,and pentacene are used as a floating-gate layer,tunneling layer,and active layer,respectively.The device shows bidirectional storage characteristics under the action of programming/erasing(P/E)operation due to the supplied electrons and holes in the channel and the bidirectional charge trapping characteristic of the poly-Si floating-gate.The carrier mobility and switching current ratio(Ion/Ioff ratio)of the device with a tunneling layer thickness of 85 nm are 0.01 cm^2·V^-1·s^-1 and 102,respectively.A large memory window of 9.28 V can be obtained under a P/E voltage of±60 V.
基金Project supported by the National Natural Science Foundation of China (Grant No.61874029)。
文摘Amorphous In–Ga–Zn–O(a-IGZO)thin-film transistor(TFT)memories with novel p-SnO/n-SnO_(2) heterojunction charge trapping stacks(CTSs)are investigated comparatively under a maximum fabrication temperature of 280℃.Compared to a single p-SnO or n-SnO_(2) charge trapping layer(CTL),the heterojunction CTSs can achieve electrically programmable and erasable characteristics as well as good data retention.Of the two CTSs,the tunneling layer/p-SnO/nSnO_(2)/blocking layer architecture demonstrates much higher program efficiency,more robust data retention,and comparably superior erase characteristics.The resulting memory window is as large as 6.66 V after programming at 13 V/1 ms and erasing at-8 V/1 ms,and the ten-year memory window is extrapolated to be 4.41 V.This is attributed to shallow traps in p-SnO and deep traps in n-SnO_(2),and the formation of a built-in electric field in the heterojunction.
基金supported by the National Key R&D Plan of China(Grant No.2023YFB3210400)the National Natural Science Foundation of China(No.62174101)+2 种基金the Major Scientific and Technological Innovation Project of Shandong Province(2021CXGC010603)the Fundamental Research Funds of Shandong University(2020QNQT001)Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong,Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong,the Natural Science Foundation of Qingdao-Original exploration project(No.24-4-4-zrjj-139-jch).
文摘Flexible electronics are transforming our lives by making daily activities more convenient.Central to this innovation are field-effect transistors(FETs),valued for their efficient signal processing,nanoscale fabrication,low-power consumption,fast response times,and versatility.Graphene,known for its exceptional mechanical properties,high electron mobility,and biocompatibility,is an ideal material for FET channels and sensors.The combination of graphene and FETs has given rise to flexible graphene field-effect transistors(FGFETs),driving significant advances in flexible electronics and sparked a strong interest in flexible biomedical sensors.Here,we first provide a brief overview of the basic structure,operating mechanism,and evaluation parameters of FGFETs,and delve into their material selection and patterning techniques.The ability of FGFETs to sense strains and biomolecular charges opens up diverse application possibilities.We specifically analyze the latest strategies for integrating FGFETs into wearable and implantable flexible biomedical sensors,focusing on the key aspects of constructing high-quality flexible biomedical sensors.Finally,we discuss the current challenges and prospects of FGFETs and their applications in biomedical sensors.This review will provide valuable insights and inspiration for ongoing research to improve the quality of FGFETs and broaden their application prospects in flexible biomedical sensing.
基金supported by the National Key Research and Development Program of China(2021YFA1101303)the National Natural Science Foundation of China(62374115)the Innovation Program of Shanghai Municipal Education Commission(2021-01-07-00-07-E00096).
文摘The rapid growth of artificial intelligence has accelerated data generation,which increasingly exposes the limitations faced by traditional computational architectures,particularly in terms of energy consumption and data latency.In contrast,data-centric computing that integrates processing and storage has the potential of reducing latency and energy usage.Organic optoelectronic synaptic transistors have emerged as one type of promising devices to implement the data-centric com-puting paradigm owing to their superiority of flexibility,low cost,and large-area fabrication.However,sophisticated functions including vector-matrix multiplication that a single device can achieve are limited.Thus,the fabrication and utilization of organic optoelectronic synaptic transistor arrays(OOSTAs)are imperative.Here,we summarize the recent advances in OOSTAs.Various strategies for manufacturing OOSTAs are introduced,including coating and casting,physical vapor deposition,printing,and photolithography.Furthermore,innovative applications of the OOSTA system integration are discussed,including neuromor-phic visual systems and neuromorphic computing systems.At last,challenges and future perspectives of utilizing OOSTAs in real-world applications are discussed.
基金National Natural Science Foundation of China(62171305,62405206,62004135,62001317,62111530301)Natural Science Foundation of Jiangsu Province(BK20240778,BK20241917)+3 种基金State Key Laboratory of Advanced Optical Communication Systems and Networks,China(2023GZKF08)China Postdoctoral Science Foundation(2024M752314)Postdoctoral Fellowship Program of CPSF(GZC20231883)Innovative and Entrepreneurial Talent Program of Jiangsu Province(JSSCRC2021527).
文摘Photonic platforms are gradually emerging as a promising option to encounter the ever-growing demand for artificial intelligence,among which photonic time-delay reservoir computing(TDRC)is widely anticipated.While such a computing paradigm can only employ a single photonic device as the nonlinear node for data processing,the performance highly relies on the fading memory provided by the delay feedback loop(FL),which sets a restriction on the extensibility of physical implementation,especially for highly integrated chips.Here,we present a simplified photonic scheme for more flexible parameter configurations leveraging the designed quasi-convolution coding(QC),which completely gets rid of the dependence on FL.Unlike delay-based TDRC,encoded data in QC-based RC(QRC)enables temporal feature extraction,facilitating augmented memory capabilities.Thus,our proposed QRC is enabled to deal with time-related tasks or sequential data without the implementation of FL.Furthermore,we can implement this hardware with a low-power,easily integrable vertical-cavity surface-emitting laser for high-performance parallel processing.We illustrate the concept validation through simulation and experimental comparison of QRC and TDRC,wherein the simpler-structured QRC outperforms across various benchmark tasks.Our results may underscore an auspicious solution for the hardware implementation of deep neural networks.
基金supported by the National Institutes of Health,Nos.AA025919,AA025919-03S1,and AA025919-05S1(all to RAF).
文摘Hippocampal neuronal loss causes cognitive dysfunction in Alzheimer’s disease.Adult hippocampal neurogenesis is reduced in patients with Alzheimer’s disease.Exercise stimulates adult hippocampal neurogenesis in rodents and improves memory and slows cognitive decline in patients with Alzheimer’s disease.However,the molecular pathways for exercise-induced adult hippocampal neurogenesis and improved cognition in Alzheimer’s disease are poorly understood.Recently,regulator of G protein signaling 6(RGS6)was identified as the mediator of voluntary running-induced adult hippocampal neurogenesis in mice.Here,we generated novel RGS6fl/fl;APP_(SWE) mice and used retroviral approaches to examine the impact of RGS6 deletion from dentate gyrus neuronal progenitor cells on voluntary running-induced adult hippocampal neurogenesis and cognition in an amyloid-based Alzheimer’s disease mouse model.We found that voluntary running in APP_(SWE) mice restored their hippocampal cognitive impairments to that of control mice.This cognitive rescue was abolished by RGS6 deletion in dentate gyrus neuronal progenitor cells,which also abolished running-mediated increases in adult hippocampal neurogenesis.Adult hippocampal neurogenesis was reduced in sedentary APP_(SWE) mice versus control mice,with basal adult hippocampal neurogenesis reduced by RGS6 deletion in dentate gyrus neural precursor cells.RGS6 was expressed in neurons within the dentate gyrus of patients with Alzheimer’s disease with significant loss of these RGS6-expressing neurons.Thus,RGS6 mediated voluntary running-induced rescue of impaired cognition and adult hippocampal neurogenesis in APP_(SWE) mice,identifying RGS6 in dentate gyrus neural precursor cells as a possible therapeutic target in Alzheimer’s disease.
基金supported by the National Natural Science Foundation of China(Nos.52201207 and 52271169)the Fundamental Research Funds for the Central University(No.3072024LJ1002).
文摘The active development of space industry necessitates the cre-ation of novel materials with unique properties,including shape memory alloys(SMAs).The development of ultra-high temperature SMAs(UHTSMAs)with operating temperatures above 400℃is a significant challenge[1-3].It is known that reversible thermoelas-tic martensitic transformation(MT)is the basis for shape mem-ory behavior[4].Currently,there are several systems in which MT temperatures meet the above requirements,for example,RuNb[5],HfPd[6],TiPd[7].
基金supported by the Hunan Science Fund for Distinguished Young Scholars(2023JJ10069)the National Natural Science Foundation of China(52172169)the Project of State Key Laboratory of Precision Manufacturing for Extreme Service Performance,Central South University(ZZYJKT2024-02).
文摘The traditional von Neumann architecture has demonstrated inefficiencies in parallel computing and adaptive learn-ing,rendering it incapable of meeting the growing demand for efficient and high-speed computing.Neuromorphic comput-ing with significant advantages such as high parallelism and ultra-low power consumption is regarded as a promising pathway to overcome the limitations of conventional computers and achieve the next-generation artificial intelligence.Among various neuromorphic devices,the artificial synapses based on electrolyte-gated transistors stand out due to their low energy consump-tion,multimodal sensing/recording capabilities,and multifunctional integration.Moreover,the emerging optoelectronic neuro-morphic devices which combine the strengths of photonics and electronics have demonstrated substantial potential in the neu-romorphic computing field.Therefore,this article reviews recent advancements in electrolyte-gated optoelectronic neuromor-phic transistors.First,it provides an overview of artificial optoelectronic synapses and neurons,discussing aspects such as device structures,operating mechanisms,and neuromorphic functionalities.Next,the potential applications of optoelectronic synapses in different areas such as artificial visual system,pain system,and tactile perception systems are elaborated.Finally,the current challenges are summarized,and future directions for their developments are proposed.
