Lithography is a Key enabling technique in modern micro/nano scale technology.Achieving the optimal trade-off between resolution,throughput,and cost remains a central focus in the ongoing development.However,current l...Lithography is a Key enabling technique in modern micro/nano scale technology.Achieving the optimal trade-off between resolution,throughput,and cost remains a central focus in the ongoing development.However,current lithographic techniques such as direct-write,projection,and extreme ultraviolet lithography achieve higher resolution at the expense of increased complexity in optical systems or the use of shorter-wavelength light sources,thus raising the overall cost of production.Here,we present a cost-effective and wafer-level perfect conformal contact lithography at the diffraction limit.By leveraging a transferable photoresist,the technique ensures optimal contact between the mask and photoresist with zero-gap,facilitating the transfer of patterns at the diffraction limit while maintaining high fidelity and uniformity across large wafers.This technique applies to a wide range of complex surfaces,including non-conductive glass surfaces,flexible substrates,and curved surfaces.The proposed technique expands the potential of contact photolithography for novel device architectures and practic al manufacturing processes.展开更多
The molecular transfer printing（MTP） technique has been invented to fabricate chemical patterns with high fidelity using homopolymer inks. In this work, we systematically studied the effects of the molecular weights...The molecular transfer printing（MTP） technique has been invented to fabricate chemical patterns with high fidelity using homopolymer inks. In this work, we systematically studied the effects of the molecular weights of homopolymer inks and transfer conditions on the MTP process. We explored a large range of molecular weights（~3.5-56 kg·mol^（-1）） of hydroxyl-terminated polystyrene（PS-OH） and hydroxyl-terminated poly（methyl methacrylate）（PMMA-OH） in the MTP process, and found that the resulting chemical patterns on replicas from all five blends were functional and able to direct the assembly of films of the same blends. The transfer temperature and the film annealing sequences had an impact on the MTP process. MTP was sensitive to the transfer temperature and could only be performed within a certain temperature range, i.e. higher than the glass transition temperature（T_g） of copolymers and lower than the rearrangement temperature of the assembled domains. Pre-organization of the blend films was also necessary for MTP since the preferential wetting of PMMA domains at the replica surface might result in the formation of a PMMA wetting layer to prevent the presentation of underlying chemical patterns to the replica surface.展开更多
Three empirical rules of interfacial potential and Gibb's energy with the radius,charge number of transfer ions and dielectric constant of organic phase are obtained for the ion transfer across the liquid-liquid i...Three empirical rules of interfacial potential and Gibb's energy with the radius,charge number of transfer ions and dielectric constant of organic phase are obtained for the ion transfer across the liquid-liquid interface,which are verified by the transfer of simple anions,dye ions and metal ions facilitated by neutral ionophores across the interface between water and some organic solvents, and deduced theoretically based on the electrostatic interaction of ion and high-permittivity solvent. The rules are proved to be effective of choosing supporting electrolytes and searching for new transfer system which follows the rule that r/n of transfer ion should be larger than that of electrolytes ion in water phase and less than that in organic phase.A rule for judgement of the charge sign of transfer ion is suggested firstly based on the relationship between interfacial half-wave potential and dielectric constant of organic phase.展开更多
This article reviews our recent progress on ultra-high density nanowires(NWs)array-based electronics.The superlattice nanowire pattern transfer(SNAP)method is utilized to produce aligned,ultra-high density Si NW array...This article reviews our recent progress on ultra-high density nanowires(NWs)array-based electronics.The superlattice nanowire pattern transfer(SNAP)method is utilized to produce aligned,ultra-high density Si NW arrays.We fi rst cover processing and materials issues related to achieving bulk-like conductivity characteristics from 1020 nm wide Si NWs.We then discuss Si NW-based fi eld-effect transistors(FETs).These NWs&NW FETs provide terrifi c building blocks for various electronic circuits with applications to memory,energy conversion,fundamental physics,logic,and others.We focus our discussion on complementary symmetry NW logic circuitry,since that provides the most demanding metrics for guiding nanofabrication.Issues such as controlling the density and spatial distribution of both p-and n-type dopants within NW arrays are discussed,as are general methods for achieving Ohmic contacts to both p-and n-type NWs.These various materials and nanofabrication advances are brought together to demonstrate energy effi cient,complementary symmetry NW logic circuits.展开更多
In this study,the electrical properties of Si Ge nanowires in terms of process and fabrication integrity,measurement reliability,width scaling,and doping levels were investigated.Nanowires were fabricated on Si Geon o...In this study,the electrical properties of Si Ge nanowires in terms of process and fabrication integrity,measurement reliability,width scaling,and doping levels were investigated.Nanowires were fabricated on Si Geon oxide(SGOI)wafers with thickness of 52 nm and Ge content of 47%.The first group of Si Ge wires was initially formed by using conventional I-line lithography and then their size was longitudinally reduced by cutting with a focused ion beam(FIB)to any desired nanometer range down to 60 nm.The other nanowire group was manufactured directly to a chosen nanometer level by using sidewall transfer lithography(STL).It has been shown that the FIB fabrication process allows manipulation of the line width and doping level of nanowires using Ga atoms.The resistance of wires thinned by FIB was 10 times lower than STL wires which shows the possible dependency of electrical behavior on fabrication method.展开更多
Micro/nano functional structures (MNFSs) have attracted substantial attention because of theiroutstanding performance in optical, tribological, thermal, electronic, and biomedical applications. Despite thedevelopment ...Micro/nano functional structures (MNFSs) have attracted substantial attention because of theiroutstanding performance in optical, tribological, thermal, electronic, and biomedical applications. Despite thedevelopment of various mechanical and non-mechanical machining methods, achieving the high-efficiency, high-precision fabrication of MNFS from difficult-to-cut materials remains a significant technical challenge. This reviewbegins with an introduction to typical artificial MNFSs and their stringent requirements and then provides acomprehensive survey of MNFSs, focusing on etching methods. In particular, plasma etching demonstrates notableadvantages in MNFS fabrication. However, two critical challenges persist: accurately controlling topographicalinformation during pattern transfer in plasma etching and achieving high-quality, uniform patterning masks overlarge areas. These issues are addressed by thoroughly analyzing and summarizing the modeling of plasma etchingand the simulation of feature profiles. Various hybrid etching machining (HEM) strategies, including laser andetching combined machining, cutting and etching combined machining, molding and etching combined machining,and self-assembly and etching combined machining, are categorized and compared in detail to facilitate themanufacturing of complex MNFSs. Finally, this review summarizes current deficiencies and future challenges ofHEM, laying the groundwork for further advancements in MNFS fabrication and intelligent HEM technologies.展开更多
基金supported by the National Key Research and Development Program of China (2022YFB4602600)National Natural Science Foundation of China (Grant Nos. 52425508 & 52221001)the Hunan Provincial Natural Science Foundation of China (2025JJ60286)。
文摘Lithography is a Key enabling technique in modern micro/nano scale technology.Achieving the optimal trade-off between resolution,throughput,and cost remains a central focus in the ongoing development.However,current lithographic techniques such as direct-write,projection,and extreme ultraviolet lithography achieve higher resolution at the expense of increased complexity in optical systems or the use of shorter-wavelength light sources,thus raising the overall cost of production.Here,we present a cost-effective and wafer-level perfect conformal contact lithography at the diffraction limit.By leveraging a transferable photoresist,the technique ensures optimal contact between the mask and photoresist with zero-gap,facilitating the transfer of patterns at the diffraction limit while maintaining high fidelity and uniformity across large wafers.This technique applies to a wide range of complex surfaces,including non-conductive glass surfaces,flexible substrates,and curved surfaces.The proposed technique expands the potential of contact photolithography for novel device architectures and practic al manufacturing processes.
基金finically supported by the National Natural Science Foundation of China(Nos.51773201 and 51373166)“The Hundred Talents Program”from the Chinese Academy of Sciences,and Department of Science and Technology of Jilin Province(Nos.20150204027GX and 20160414032GH)
文摘The molecular transfer printing（MTP） technique has been invented to fabricate chemical patterns with high fidelity using homopolymer inks. In this work, we systematically studied the effects of the molecular weights of homopolymer inks and transfer conditions on the MTP process. We explored a large range of molecular weights（~3.5-56 kg·mol^（-1）） of hydroxyl-terminated polystyrene（PS-OH） and hydroxyl-terminated poly（methyl methacrylate）（PMMA-OH） in the MTP process, and found that the resulting chemical patterns on replicas from all five blends were functional and able to direct the assembly of films of the same blends. The transfer temperature and the film annealing sequences had an impact on the MTP process. MTP was sensitive to the transfer temperature and could only be performed within a certain temperature range, i.e. higher than the glass transition temperature（T_g） of copolymers and lower than the rearrangement temperature of the assembled domains. Pre-organization of the blend films was also necessary for MTP since the preferential wetting of PMMA domains at the replica surface might result in the formation of a PMMA wetting layer to prevent the presentation of underlying chemical patterns to the replica surface.
基金This work was supported by the National Natural Science Foundation of China.
文摘Three empirical rules of interfacial potential and Gibb's energy with the radius,charge number of transfer ions and dielectric constant of organic phase are obtained for the ion transfer across the liquid-liquid interface,which are verified by the transfer of simple anions,dye ions and metal ions facilitated by neutral ionophores across the interface between water and some organic solvents, and deduced theoretically based on the electrostatic interaction of ion and high-permittivity solvent. The rules are proved to be effective of choosing supporting electrolytes and searching for new transfer system which follows the rule that r/n of transfer ion should be larger than that of electrolytes ion in water phase and less than that in organic phase.A rule for judgement of the charge sign of transfer ion is suggested firstly based on the relationship between interfacial half-wave potential and dielectric constant of organic phase.
基金supported by a subcontract from the MITRE Corporation,the MARCO center for Advanced Materials and Devices,and the National Science Foundation(NMF-CCF-05204490 and CCF-0541461).
文摘This article reviews our recent progress on ultra-high density nanowires(NWs)array-based electronics.The superlattice nanowire pattern transfer(SNAP)method is utilized to produce aligned,ultra-high density Si NW arrays.We fi rst cover processing and materials issues related to achieving bulk-like conductivity characteristics from 1020 nm wide Si NWs.We then discuss Si NW-based fi eld-effect transistors(FETs).These NWs&NW FETs provide terrifi c building blocks for various electronic circuits with applications to memory,energy conversion,fundamental physics,logic,and others.We focus our discussion on complementary symmetry NW logic circuitry,since that provides the most demanding metrics for guiding nanofabrication.Issues such as controlling the density and spatial distribution of both p-and n-type dopants within NW arrays are discussed,as are general methods for achieving Ohmic contacts to both p-and n-type NWs.These various materials and nanofabrication advances are brought together to demonstrate energy effi cient,complementary symmetry NW logic circuits.
基金Project support by the Swedish Foundation for Strategic Research"SSF"(No.EM-011-0002)the Scientific and Technological Research Council of Turkey(No.TüBiTAK)
文摘In this study,the electrical properties of Si Ge nanowires in terms of process and fabrication integrity,measurement reliability,width scaling,and doping levels were investigated.Nanowires were fabricated on Si Geon oxide(SGOI)wafers with thickness of 52 nm and Ge content of 47%.The first group of Si Ge wires was initially formed by using conventional I-line lithography and then their size was longitudinally reduced by cutting with a focused ion beam(FIB)to any desired nanometer range down to 60 nm.The other nanowire group was manufactured directly to a chosen nanometer level by using sidewall transfer lithography(STL).It has been shown that the FIB fabrication process allows manipulation of the line width and doping level of nanowires using Ga atoms.The resistance of wires thinned by FIB was 10 times lower than STL wires which shows the possible dependency of electrical behavior on fabrication method.
基金supports by the National Natural Science Foundation of China(Grant Nos.52435008,52205440,and 52205441).
文摘Micro/nano functional structures (MNFSs) have attracted substantial attention because of theiroutstanding performance in optical, tribological, thermal, electronic, and biomedical applications. Despite thedevelopment of various mechanical and non-mechanical machining methods, achieving the high-efficiency, high-precision fabrication of MNFS from difficult-to-cut materials remains a significant technical challenge. This reviewbegins with an introduction to typical artificial MNFSs and their stringent requirements and then provides acomprehensive survey of MNFSs, focusing on etching methods. In particular, plasma etching demonstrates notableadvantages in MNFS fabrication. However, two critical challenges persist: accurately controlling topographicalinformation during pattern transfer in plasma etching and achieving high-quality, uniform patterning masks overlarge areas. These issues are addressed by thoroughly analyzing and summarizing the modeling of plasma etchingand the simulation of feature profiles. Various hybrid etching machining (HEM) strategies, including laser andetching combined machining, cutting and etching combined machining, molding and etching combined machining,and self-assembly and etching combined machining, are categorized and compared in detail to facilitate themanufacturing of complex MNFSs. Finally, this review summarizes current deficiencies and future challenges ofHEM, laying the groundwork for further advancements in MNFS fabrication and intelligent HEM technologies.
