We report on a novel g-C3N4/TiO 2/Co-Pi photoanode combining a TiO2 protection layer, Co-Pi hole capture layer, and g-C3 N4 light-absorption layer layer for photoelectrochemical（PEC） water splitting to generate hydr...We report on a novel g-C3N4/TiO 2/Co-Pi photoanode combining a TiO2 protection layer, Co-Pi hole capture layer, and g-C3 N4 light-absorption layer layer for photoelectrochemical（PEC） water splitting to generate hydrogen for the first time. This new photoanode with three function layers exhibits enhanced PEC performance with a photocurrent density of 0.346 mA ·cm–2 at 1.1 V（vs. RHE）,which is approximately 3.6 times that of pure g-C3N4 photoanode. The enhanced PEC performance of g-C3N4/TiO 2/Co-Pi photoanode benefits from the following：（1） excellent visible light absorption of g-C3N4;（2） stable protection of TiO2 to improve the durability of g-C3N4 film; and（3） photogenerated holes capture Co-Pi to separate photogenerated electron-hole pairs efficiently. This promising multifarious function layers structure provides a new perspective for PEC water splitting to generate hydrogen.展开更多
Photoelectrochemical(PEC) cathodic protection is considered as an environment friendly method for metals anticorrosion. In this technology, a n-type semiconductor photoanode provides the photogenerated electrons for m...Photoelectrochemical(PEC) cathodic protection is considered as an environment friendly method for metals anticorrosion. In this technology, a n-type semiconductor photoanode provides the photogenerated electrons for metal to achieve cathodic protection. Comparing with traditional PEC photoanode for water splitting, it requires the photoanode providing a suitable cathodic potential for the metal, instead of pursuit ultimate photon to electric conversion efficiency, thus it is a more possible PEC technology for engineering application. To date, great efforts have been devoted to developing novel n-type semiconductors and advanced modification method to improve the performance on PEC cathodic protection metals. Herein, recent progresses in this field are summarized. We highlight the fabrication process of PEC cathodic protection thin film, various nanostructure controlling, doping, compositing methods and their operation mechanism. Finally, the current challenges and future potential works on improving the PEC cathodic protection performance are discussed.展开更多
基金supported by the Science Funds of Tianjin for Distinguished Young Scholar(17JCJQJC44800)Natural Science Foundation of Tianjin(16JCYBJC17900)Open Foundation of Hubei Collaborative Innovation Center for High-efficient Utilization of Solar Energy(HBSKFZD2017001)~~
文摘We report on a novel g-C3N4/TiO 2/Co-Pi photoanode combining a TiO2 protection layer, Co-Pi hole capture layer, and g-C3 N4 light-absorption layer layer for photoelectrochemical（PEC） water splitting to generate hydrogen for the first time. This new photoanode with three function layers exhibits enhanced PEC performance with a photocurrent density of 0.346 mA ·cm–2 at 1.1 V（vs. RHE）,which is approximately 3.6 times that of pure g-C3N4 photoanode. The enhanced PEC performance of g-C3N4/TiO 2/Co-Pi photoanode benefits from the following：（1） excellent visible light absorption of g-C3N4;（2） stable protection of TiO2 to improve the durability of g-C3N4 film; and（3） photogenerated holes capture Co-Pi to separate photogenerated electron-hole pairs efficiently. This promising multifarious function layers structure provides a new perspective for PEC water splitting to generate hydrogen.
基金supported by National Natural Science Foundation of China(Grant no.41506093)
文摘Photoelectrochemical(PEC) cathodic protection is considered as an environment friendly method for metals anticorrosion. In this technology, a n-type semiconductor photoanode provides the photogenerated electrons for metal to achieve cathodic protection. Comparing with traditional PEC photoanode for water splitting, it requires the photoanode providing a suitable cathodic potential for the metal, instead of pursuit ultimate photon to electric conversion efficiency, thus it is a more possible PEC technology for engineering application. To date, great efforts have been devoted to developing novel n-type semiconductors and advanced modification method to improve the performance on PEC cathodic protection metals. Herein, recent progresses in this field are summarized. We highlight the fabrication process of PEC cathodic protection thin film, various nanostructure controlling, doping, compositing methods and their operation mechanism. Finally, the current challenges and future potential works on improving the PEC cathodic protection performance are discussed.
