The diffusion barrier Ni-Mo-P film for Cu interconnects was prepared on SiO2/Si substrate using electroless method. The surface morphology and composition during the formation process of electroless Ni-Mo-P film were ...The diffusion barrier Ni-Mo-P film for Cu interconnects was prepared on SiO2/Si substrate using electroless method. The surface morphology and composition during the formation process of electroless Ni-Mo-P film were investigated through analyzing samples of different deposition time. Induced nucleation, induced co-deposition, and self-induced growth mechanisms involved in electroless process were confirmed by field-emission scanning electron microscopy （FE-SEM）, energy dispersive spectrometry and atomic force microscopy （AFM）. Firstly, the preceding palladium particles as catalysts induce the nucleation of nickel. Secondly, the nickel particles induce the deposition of molybdenum and phosphorus, which attributes to induced co-deposition. Thirdly, former deposited Ni-Mo-P induces deposition of the latter Ni-Mo-P particles. Moreover, the reaction mechanism was proposed with the oxydate of 3-4PO .展开更多
Porous SiO_(2)film has been widely studied due to its extensive applications in many fields.This paper presents a newly produced porous SiO_(2)film made by traditional sol-gel method.Bare Si and Si with SiO_(2)buffer ...Porous SiO_(2)film has been widely studied due to its extensive applications in many fields.This paper presents a newly produced porous SiO_(2)film made by traditional sol-gel method.Bare Si and Si with SiO_(2)buffer layer were used as substrate.The SiO_(2)buffer layer was 500 nm in thickness and was grown by thermal oxidization.The structural properties of SiO_(2)aerogel films spincoated on both materials were observed by optical microscope(OM)and scanning electron microscope(SEM).Results reveal that the surface of SiO_(2)aerogel films on bare Si is rough and discontinuous.While flat and smooth surface is observed on sample with SiO_(2)buffer layer.This indicates that by inserting SiO_(2)buffer layer,the structural property of SiO_(2)aerogel film deposited on Si is improved.展开更多
采用全矢量交替方向隐含迭代方法系统分析了高折射率 Si ON薄膜对 Si基 Si O2 阵列波导光栅中波导应力双折射的影响 .分析结果表明在芯区上或下表面沉积 Si ON薄膜可以明显减小 Si基 Si O2 阵列波导光栅 (AWG)中波导的应力双折射 ,但这...采用全矢量交替方向隐含迭代方法系统分析了高折射率 Si ON薄膜对 Si基 Si O2 阵列波导光栅中波导应力双折射的影响 .分析结果表明在芯区上或下表面沉积 Si ON薄膜可以明显减小 Si基 Si O2 阵列波导光栅 (AWG)中波导的应力双折射 ,但这两种补偿方法容易使模场偏移中心位置 ,不利于波导与光纤的耦合 .理想的补偿方法是在芯区上下同时补偿 ,可减小模场偏移 ,并用该方法设计了偏振无关的 1 6通道 AWG.展开更多
文摘The diffusion barrier Ni-Mo-P film for Cu interconnects was prepared on SiO2/Si substrate using electroless method. The surface morphology and composition during the formation process of electroless Ni-Mo-P film were investigated through analyzing samples of different deposition time. Induced nucleation, induced co-deposition, and self-induced growth mechanisms involved in electroless process were confirmed by field-emission scanning electron microscopy （FE-SEM）, energy dispersive spectrometry and atomic force microscopy （AFM）. Firstly, the preceding palladium particles as catalysts induce the nucleation of nickel. Secondly, the nickel particles induce the deposition of molybdenum and phosphorus, which attributes to induced co-deposition. Thirdly, former deposited Ni-Mo-P induces deposition of the latter Ni-Mo-P particles. Moreover, the reaction mechanism was proposed with the oxydate of 3-4PO .
基金financially supported by the National Natural Science Foundation of China(No.51102037)the Fundamental Research Funds for the Central Universities from UESTC(Nos.ZYGX2010J030 and ZYGX2011J023)。
文摘Porous SiO_(2)film has been widely studied due to its extensive applications in many fields.This paper presents a newly produced porous SiO_(2)film made by traditional sol-gel method.Bare Si and Si with SiO_(2)buffer layer were used as substrate.The SiO_(2)buffer layer was 500 nm in thickness and was grown by thermal oxidization.The structural properties of SiO_(2)aerogel films spincoated on both materials were observed by optical microscope(OM)and scanning electron microscope(SEM).Results reveal that the surface of SiO_(2)aerogel films on bare Si is rough and discontinuous.While flat and smooth surface is observed on sample with SiO_(2)buffer layer.This indicates that by inserting SiO_(2)buffer layer,the structural property of SiO_(2)aerogel film deposited on Si is improved.
