Micron-sized silicon anodes offer significant industrial advantages over nanoscale counterparts due to their cost-effectiveness and scalability.However,their practical applications are significantly hindered by severe...Micron-sized silicon anodes offer significant industrial advantages over nanoscale counterparts due to their cost-effectiveness and scalability.However,their practical applications are significantly hindered by severe stress-induced fragmentation,leading to rapid capacity decay.Addressing this challenge,we introduce a novel dual-conformal encapsulated micron-sized porous Si(μm-pSi)anode by utilizingμm-Si recycled from the photovoltaic industry as the Si precursor.This encapsulation design of the internal conformal SiO_(x)/C layer and external Ti_(3)C_(2)Tx MXene layer forms intergranular and intragranular protective skins onμm-pSi,ensuring simultaneous mechanical and electrochemical stability for efficient Li+storage.As a result,the fabricated WpSi@SiO_(x)/C@MXene anode demonstrates an exceptional cycling performance,delivering 535.1 mA h g^(−1)after 1500 cycles at 5 A g^(−1)with a minimal capacity decay of 0.003%per cycle.Chemo-mechanical modeling and SEI analysis reveal that the dual-conformal coating achieves exceptional mechanical and electrochemical stability through robust mechanical confinement and ultra-fast Li+diffusion kinetics during lithiation,coupled with a Li_(2)CO_(3)/LiF-rich hybrid SEI that facilitates Li+transport,collectively enabling rate-insensitive stress evolution,long-term structural durability,and stable cycling under high-rate conditions.This work provides a compelling design strategy for leveraging sustainableμm-Si to achieve high-rate and long-life lithium-ion batteries.展开更多
The interface reaction between the SiC particles （ SiCp ） and Fe was stndicd during sintering the SiCp reinforced Fe matrix composites at 1423 K for 1 h. In the composite having 3wt% （weight ratio） SiCp （the 3SiC...The interface reaction between the SiC particles （ SiCp ） and Fe was stndicd during sintering the SiCp reinforced Fe matrix composites at 1423 K for 1 h. In the composite having 3wt% （weight ratio） SiCp （the 3SiCp/ Fe composite）, the interface reaction products of Fe3 Si, the carbon precipitates, and Fe3 C or pearlite were generated. Fe3 Si coustructs the bright matrix of the reaction zone in the original situation of the SiCp. The carbon precipitates are randondy embedded in the reaction zone. Fe3 C or pearlite exists at the grain boundaries of the Fe matrix. As increasing the SiCp concentration in the SiCp/ Fe composite, the inteusity of the interface reaction between SiCp and Fe iacreases. After the 10SiCp/ Fe composite （ having 10wt .% SiCp ） sintered at 1423 K for 1 h, all of SiCp are decomposed, and replaced by the reaction zone composed of Fe3 Si and the carbon precipitates. No Fe3 C or pearlite was genertaed during the reaction. The effects of the techniques of oxidizing of SiCp , coating SiCp by interaction with the Cr powder, and alloying the Fe matrix by adding the Cr element on the interface stability of the SiCp/ Fe composite system were also investigated, respectitely. The oxide membrane and the coating layer on SiCp can inhibit the interface reaction between SiCp and Fe by isolating SiCp from the Fe matrix during sintering. The interface reaction does not occur in the 3 SiCp/ Fe- 10 Cr composite but in the 3 SiCp/ Fe-5 Cr composite. In the SiCp/ Fe-Cr alloy composites, the interface reaction between SiCp and the Fe- Cr alloys is weaker than that between SiCp and Fe . The Cr element behaves as a diluent, it causes a redaction in the interface reaction, which is proportional to the amount of the element added.展开更多
Prenitridation of the TiBx coating surface of the Sigma SM1240 SiC fiber can form more stable compounds at the surface and obstruct the release of boron atoms into the Ti-based alloy matrix. The effect of nitridation ...Prenitridation of the TiBx coating surface of the Sigma SM1240 SiC fiber can form more stable compounds at the surface and obstruct the release of boron atoms into the Ti-based alloy matrix. The effect of nitridation on the tensile strength of the fiber was investigated in this work. Nitridation could degrade the tensile strength of the SiC fiber if the treating temperature and time are not optimized. The chemical reaction between the W core and SiC and the modification of fiber microstructure during the nitridation are responsible for the degradation in strength. The strength can be maintained by further optimization of the treating temperature and time. Therefore, stabilizing the surface of TiBx coating and hence the interface of the SiCf/Ti composite by the nitridation of the SiC fiber is a feasible technique for practical applications.展开更多
Model composites consisting of Si C fiber embedded inβ-Yb_(2)Si_(2)O_(7) matrix were processed by Spark Plasma Sintering method and the feasibility of tunable Si Cf/Yb_(2)Si_(2)O_(7) interface in Si C-based CMCs were...Model composites consisting of Si C fiber embedded inβ-Yb_(2)Si_(2)O_(7) matrix were processed by Spark Plasma Sintering method and the feasibility of tunable Si Cf/Yb_(2)Si_(2)O_(7) interface in Si C-based CMCs were estimated.Weak and strengthened Si Cf/Yb_(2)Si_(2)O_(7) interfaces were achieved by adjusting sintering temperatures.The indentation crack test and fiber push out experiments clearly demonstrated the different debonding mechanisms in the samples.Weak interfaces sintered at 1200 and 1250℃exhibited crack deflection at interface in indentation test.Their low debond energy at the interface,which were comparable to those of Py C or BN,satisfied the well-recognized interfacial debond and crack deflection criteria for CMCs.The interface was strengthened by atomic bonding in model composite sintered at 1450℃,leading to crack penetrating into Si C fiber and high debond energy.The strong interface may be promising in Si Cf/Si C CMC to withstand higher combustion temperature,because Yb_(2)Si_(2)O_(7) will provide plastic deformation capacity,which would serve as weak interphase for crack deflection and energy dissipation.Therefore,it is possible to design the capability of Si C_(f)/RE_(2)Si_(2)O_(7) interface for different requirements by adjusting interfacial strength or debond energy to reach optimal mechanical fuse mechanism in SiC_(f)/SiC CMC.展开更多
The microwave plasma oxidation under the relatively high pressure(6 kPa)region is introduced into the fabrication process of SiO_(2)/4 H-SiC stack.By controlling the oxidation pressure,species,and temperature,the reco...The microwave plasma oxidation under the relatively high pressure(6 kPa)region is introduced into the fabrication process of SiO_(2)/4 H-SiC stack.By controlling the oxidation pressure,species,and temperature,the record low density of interface traps(~4×10^(10)cm^(-2)·eV^(-1)@Ec-0.2 eV)is demonstrated on SiO_(2)/SiC stack formed by microwave plasma oxidation.And high quality SiO_(2)with very flat interface(0.27-nm root-mean-square roughness)is obtained.High performance Si C metal–oxide–semiconductor field-effect transistors(MOSFETs)with peak field effect mobility of 44 cm^(-2)·eV^(-1)is realized without additional treatment.These results show the potential of a high-pressure plasma oxidation step for improving the channel mobility in SiC MOSFETs.展开更多
The effects of interface shape on stress wave distribution and attenuation were investiga- ted using finite element method （ FEM ）. The simulation results indicate that when the stress wave propagates from SiC ceram...The effects of interface shape on stress wave distribution and attenuation were investiga- ted using finite element method （ FEM ）. The simulation results indicate that when the stress wave propagates from SiC ceramic to A1 alloy, the tensile stress decreases and the attenuation coefficient of the stress wave increases with increasing central angle of the concave interface between SiC and A1. But for the convex interface, the tensile stress increases and attenuation coefficient decreases with increasing central angle. As the stress wave propagates from A1 alloy to SiC ceramic, the atten- uation coefficient of stress wave decreases with increasing the central angle of the concave interface. For the convex interface, the attenuation coefficient increases with increasing central angle.展开更多
An amorphous SiO2/4 H–Si C（0001） interface model with carbon dimer defects is established based on density functional theory of the first-principle plane wave pseudopotential method.The structures of carbon dimer d...An amorphous SiO2/4 H–Si C（0001） interface model with carbon dimer defects is established based on density functional theory of the first-principle plane wave pseudopotential method.The structures of carbon dimer defects after passivation by H2 and NO molecules are established,and the interface states before and after passivation are calculated by the Heyd–Scuseria–Ernzerhof（HSE06） hybrid functional scheme.Calculation results indicate that H2 can be adsorbed on the O2–C = C–O2 defect and the carbon–carbon double bond is converted into a single bond.However,H2 cannot be adsorbed on the O2–（C = C）′ –O2 defect.The NO molecules can be bonded by N and C atoms to transform the carbon–carbon double bonds,thereby passivating the two defects.This study shows that the mechanism for the passivation of Si O2/4 H–SiC（0001） interface carbon dimer defects is to convert the carbon–carbon double bonds into carbon dimers.Moreover,some intermediate structures that can be introduced into the interface state in the band gap should be avoided.展开更多
The effect of the pyrolytic carbon(PyC)interface thickness on the heat-stability of CansasⅡSiC_(f)/SiC composites under Ar up to 1500℃was studied in detail.After the heat treatment at 1500℃for 50 h,the interface bo...The effect of the pyrolytic carbon(PyC)interface thickness on the heat-stability of CansasⅡSiC_(f)/SiC composites under Ar up to 1500℃was studied in detail.After the heat treatment at 1500℃for 50 h,the interface bonding strength of the thin interface(about 200 nm)decreases from 74.4 to 20.1 MPa(73.0%),while that of the thick interface(about 2μm)declines from 7.3 to 3.2 MPa(52.7%).At the same time,the decline fraction of strength of the composites with the thin interface is 12.1%,less than that with the thick interface(42.0%).The fiber strength also decreases after heat treatment,which may be due to the significant growth ofβ-SiC grains and critical defects.The different heat-stability of the interface with the thin and thick thickness might be related to the inconsistency of the degree of the graphitization of PyC.Compared with the composites with the thick interface,the composites with the thin interface remained higher tensile strength after heat treatment due to the better interface bonding strength.The interface with strong bonding strength could protect the fiber by postponing the decomposition of amorphous phases SiC_(x)O_(y) and hindering the generation of fiber defects.展开更多
This paper studies two-dimensional analysis of the surface state effect on current gain for a 4H-SiC bipolar junction transistor （BJT）. Simulation results indicate the mechanism of current gain degradation, which is...This paper studies two-dimensional analysis of the surface state effect on current gain for a 4H-SiC bipolar junction transistor （BJT）. Simulation results indicate the mechanism of current gain degradation, which is surface Fermi level pinning leading to a strong downward bending of the energy bands to form the channel of surface electron recombination current. The experimental results are well-matched with the simulation, which is modeled by exponential distributions of the interface state density replacing the single interface state trap. Furthermore, the simulation reveals that the oxide quality of the base emitter junction interface is very important for 4H-SiC BJT performance.展开更多
For the manufacture of Al-based metalmatrix composites, the foundry productionroute can provide less expensive products witha greater flexibility in meeting designer’s needsamong a vaviety of fablication routes. Rece...For the manufacture of Al-based metalmatrix composites, the foundry productionroute can provide less expensive products witha greater flexibility in meeting designer’s needsamong a vaviety of fablication routes. Recent-ly, a commercially produced foundry ingot,the Duralcan composite of A356 Al alloy +20展开更多
On the basis of first principles calculations, we report that the type and density of charge carriers of epitaxial graphene on SiC（O001） can be deliberately controlled by decorating the buffer layer with specific at...On the basis of first principles calculations, we report that the type and density of charge carriers of epitaxial graphene on SiC（O001） can be deliberately controlled by decorating the buffer layer with specific atoms （i.e., F, C1, O, or N）. More importantly, a fine tuning of the doping behavior from intrinsic n-type to charge neutrality to p-type and interface magnetism is achieved via increasing the doping concentration of F atoms on the buffer layer. Our results suggest an interesting avenue to the application of epitaxial graphene in nanoscale electronic and spintronic devices.展开更多
The formation of SiC through the interface reaction between C60 and Si in a plasmaassisted chemical vapour deposition system （PACVD） is investigated with a C60 film previously deposited on Si wafers. The composition...The formation of SiC through the interface reaction between C60 and Si in a plasmaassisted chemical vapour deposition system （PACVD） is investigated with a C60 film previously deposited on Si wafers. The composition and structure of the deposited samples were characterized by micro-Raman spectroscopy and X-ray diffraction （XRD）. The results showed that SiC film was formed successfully in hydrogen plasma at a substrate temperature of 800℃ . The hydrogen atoms in plasma were found to enhance the production of SiC. Furthermore, the effects of the added CH4 on the formation of film were studied. Introduction of CH4 simultaneously with H2 at the beginning would suppress the formation of the initial layer of SiC due to a carbon-rich environment on the substrate, which would be disadvantageous to the further growth of the SiC film.展开更多
Effective improvement in electrical properties of NO passivated SiC/SiO2 interface after being irradiated by electrons is demonstrated.The density of interface traps after being irradiated by 100-kGy electrons decreas...Effective improvement in electrical properties of NO passivated SiC/SiO2 interface after being irradiated by electrons is demonstrated.The density of interface traps after being irradiated by 100-kGy electrons decreases by about one order of magnitude,specifically,from 3×1012 cm-2·eV-1 to 4×1011 cm-2·eV-1 at 0.2 eV below the conduction band of 4H-SiC without any degradation of electric breakdown field.Particularly,the results of x-ray photoelectron spectroscopy measurement show that the C-N bonds are generated near the interface after electron irradiation,indicating that the carbon-related defects are further reduced.展开更多
Near-interface oxide traps （NIOTs） in 4H-SiC metal-oxide-semiconductor （MOS） structures fabricated with and without annealing in NO are systematically investigated in this paper. The properties of NIOTs in SiC MOS...Near-interface oxide traps （NIOTs） in 4H-SiC metal-oxide-semiconductor （MOS） structures fabricated with and without annealing in NO are systematically investigated in this paper. The properties of NIOTs in SiC MOS structures prepared with and without annealing in NO are studied and compared in detail. Two main categories of the NIOTs, the “slow” and “fast” NIOTs, are revealed and extracted. The densities of the “fast” NIOTs are determined to be 0.761011 cm-2 and 0.471011 cm-2 for the N2 post oxidation annealing （POA） sample and NO POA sample, respectively. The densities of “slow” NIOTs are 0.791011 cm-2 and 9.441011 cm-2 for the NO POA sample and N2 POA sample, respectively. It is found that the NO POA process only can significantly reduce “slow” NIOTs. However, it has a little effect on “fast” NIOTs. The negative and positive constant voltage stresses （CVS） reveal that electrons captured by those “slow” NIOTs and bulk oxide traps （BOTs） are hardly emitted by the constant voltage stress.展开更多
基金the financial support from the Natural Science Foundation of Shanghai(23ZR1423800)Open Research Fund of Shanghai Key Laboratory of Green Chemistry and Chemical Processes(East China Normal University,202503)+1 种基金State Key Laboratory of Advanced Fiber Materials(Donghua University,KF2406)Key Laboratory of Advanced Energy Materials Chemistry(Ministry of Education),Nankai University。
文摘Micron-sized silicon anodes offer significant industrial advantages over nanoscale counterparts due to their cost-effectiveness and scalability.However,their practical applications are significantly hindered by severe stress-induced fragmentation,leading to rapid capacity decay.Addressing this challenge,we introduce a novel dual-conformal encapsulated micron-sized porous Si(μm-pSi)anode by utilizingμm-Si recycled from the photovoltaic industry as the Si precursor.This encapsulation design of the internal conformal SiO_(x)/C layer and external Ti_(3)C_(2)Tx MXene layer forms intergranular and intragranular protective skins onμm-pSi,ensuring simultaneous mechanical and electrochemical stability for efficient Li+storage.As a result,the fabricated WpSi@SiO_(x)/C@MXene anode demonstrates an exceptional cycling performance,delivering 535.1 mA h g^(−1)after 1500 cycles at 5 A g^(−1)with a minimal capacity decay of 0.003%per cycle.Chemo-mechanical modeling and SEI analysis reveal that the dual-conformal coating achieves exceptional mechanical and electrochemical stability through robust mechanical confinement and ultra-fast Li+diffusion kinetics during lithiation,coupled with a Li_(2)CO_(3)/LiF-rich hybrid SEI that facilitates Li+transport,collectively enabling rate-insensitive stress evolution,long-term structural durability,and stable cycling under high-rate conditions.This work provides a compelling design strategy for leveraging sustainableμm-Si to achieve high-rate and long-life lithium-ion batteries.
基金Funded by the Natural Science Foundation of Anhui Province(No.050440704)
文摘The interface reaction between the SiC particles （ SiCp ） and Fe was stndicd during sintering the SiCp reinforced Fe matrix composites at 1423 K for 1 h. In the composite having 3wt% （weight ratio） SiCp （the 3SiCp/ Fe composite）, the interface reaction products of Fe3 Si, the carbon precipitates, and Fe3 C or pearlite were generated. Fe3 Si coustructs the bright matrix of the reaction zone in the original situation of the SiCp. The carbon precipitates are randondy embedded in the reaction zone. Fe3 C or pearlite exists at the grain boundaries of the Fe matrix. As increasing the SiCp concentration in the SiCp/ Fe composite, the inteusity of the interface reaction between SiCp and Fe iacreases. After the 10SiCp/ Fe composite （ having 10wt .% SiCp ） sintered at 1423 K for 1 h, all of SiCp are decomposed, and replaced by the reaction zone composed of Fe3 Si and the carbon precipitates. No Fe3 C or pearlite was genertaed during the reaction. The effects of the techniques of oxidizing of SiCp , coating SiCp by interaction with the Cr powder, and alloying the Fe matrix by adding the Cr element on the interface stability of the SiCp/ Fe composite system were also investigated, respectitely. The oxide membrane and the coating layer on SiCp can inhibit the interface reaction between SiCp and Fe by isolating SiCp from the Fe matrix during sintering. The interface reaction does not occur in the 3 SiCp/ Fe- 10 Cr composite but in the 3 SiCp/ Fe-5 Cr composite. In the SiCp/ Fe-Cr alloy composites, the interface reaction between SiCp and the Fe- Cr alloys is weaker than that between SiCp and Fe . The Cr element behaves as a diluent, it causes a redaction in the interface reaction, which is proportional to the amount of the element added.
基金The authors wish to thank the Royal Society, UK, and the Chinese Academy of Sciences for sponsoring a joint project-Grant No.761. The nitridation of the SiC fiber (Sigma SM1240) was carried out at QM, University of London, UK. Supply of the SiC fiber by
文摘Prenitridation of the TiBx coating surface of the Sigma SM1240 SiC fiber can form more stable compounds at the surface and obstruct the release of boron atoms into the Ti-based alloy matrix. The effect of nitridation on the tensile strength of the fiber was investigated in this work. Nitridation could degrade the tensile strength of the SiC fiber if the treating temperature and time are not optimized. The chemical reaction between the W core and SiC and the modification of fiber microstructure during the nitridation are responsible for the degradation in strength. The strength can be maintained by further optimization of the treating temperature and time. Therefore, stabilizing the surface of TiBx coating and hence the interface of the SiCf/Ti composite by the nitridation of the SiC fiber is a feasible technique for practical applications.
基金supported by the National Key R&D Program of China under Grant No.2017YFB0703201Natural Science Foundation of China under Grant No.51772302CAS International Cooperation Key Program under Grant No.174321KYSB20180008。
文摘Model composites consisting of Si C fiber embedded inβ-Yb_(2)Si_(2)O_(7) matrix were processed by Spark Plasma Sintering method and the feasibility of tunable Si Cf/Yb_(2)Si_(2)O_(7) interface in Si C-based CMCs were estimated.Weak and strengthened Si Cf/Yb_(2)Si_(2)O_(7) interfaces were achieved by adjusting sintering temperatures.The indentation crack test and fiber push out experiments clearly demonstrated the different debonding mechanisms in the samples.Weak interfaces sintered at 1200 and 1250℃exhibited crack deflection at interface in indentation test.Their low debond energy at the interface,which were comparable to those of Py C or BN,satisfied the well-recognized interfacial debond and crack deflection criteria for CMCs.The interface was strengthened by atomic bonding in model composite sintered at 1450℃,leading to crack penetrating into Si C fiber and high debond energy.The strong interface may be promising in Si Cf/Si C CMC to withstand higher combustion temperature,because Yb_(2)Si_(2)O_(7) will provide plastic deformation capacity,which would serve as weak interphase for crack deflection and energy dissipation.Therefore,it is possible to design the capability of Si C_(f)/RE_(2)Si_(2)O_(7) interface for different requirements by adjusting interfacial strength or debond energy to reach optimal mechanical fuse mechanism in SiC_(f)/SiC CMC.
基金Project supported in part by the National Key Research and Development Program of China(Grant No.2016YFB0100601)the National Natural Science Foundation of China(Grant Nos.61674169 and 61974159)the Support from a Grant-In-Aid from the Youth Innovation Promotion Association of the Chinese Academy of Sciences。
文摘The microwave plasma oxidation under the relatively high pressure(6 kPa)region is introduced into the fabrication process of SiO_(2)/4 H-SiC stack.By controlling the oxidation pressure,species,and temperature,the record low density of interface traps(~4×10^(10)cm^(-2)·eV^(-1)@Ec-0.2 eV)is demonstrated on SiO_(2)/SiC stack formed by microwave plasma oxidation.And high quality SiO_(2)with very flat interface(0.27-nm root-mean-square roughness)is obtained.High performance Si C metal–oxide–semiconductor field-effect transistors(MOSFETs)with peak field effect mobility of 44 cm^(-2)·eV^(-1)is realized without additional treatment.These results show the potential of a high-pressure plasma oxidation step for improving the channel mobility in SiC MOSFETs.
基金Supported by the National Basic Research Program of China("973" Program)(613135)
文摘The effects of interface shape on stress wave distribution and attenuation were investiga- ted using finite element method （ FEM ）. The simulation results indicate that when the stress wave propagates from SiC ceramic to A1 alloy, the tensile stress decreases and the attenuation coefficient of the stress wave increases with increasing central angle of the concave interface between SiC and A1. But for the convex interface, the tensile stress increases and attenuation coefficient decreases with increasing central angle. As the stress wave propagates from A1 alloy to SiC ceramic, the atten- uation coefficient of stress wave decreases with increasing the central angle of the concave interface. For the convex interface, the attenuation coefficient increases with increasing central angle.
基金Project supported by the National Natural Science Foundation of China(Grant No.61474013)
文摘An amorphous SiO2/4 H–Si C（0001） interface model with carbon dimer defects is established based on density functional theory of the first-principle plane wave pseudopotential method.The structures of carbon dimer defects after passivation by H2 and NO molecules are established,and the interface states before and after passivation are calculated by the Heyd–Scuseria–Ernzerhof（HSE06） hybrid functional scheme.Calculation results indicate that H2 can be adsorbed on the O2–C = C–O2 defect and the carbon–carbon double bond is converted into a single bond.However,H2 cannot be adsorbed on the O2–（C = C）′ –O2 defect.The NO molecules can be bonded by N and C atoms to transform the carbon–carbon double bonds,thereby passivating the two defects.This study shows that the mechanism for the passivation of Si O2/4 H–SiC（0001） interface carbon dimer defects is to convert the carbon–carbon double bonds into carbon dimers.Moreover,some intermediate structures that can be introduced into the interface state in the band gap should be avoided.
基金Funded by the National Science and Technology Major Project(No.2017-IV-0005-0042)the China Postdoctoral Science Foundation(No.2021M691566)。
文摘The effect of the pyrolytic carbon(PyC)interface thickness on the heat-stability of CansasⅡSiC_(f)/SiC composites under Ar up to 1500℃was studied in detail.After the heat treatment at 1500℃for 50 h,the interface bonding strength of the thin interface(about 200 nm)decreases from 74.4 to 20.1 MPa(73.0%),while that of the thick interface(about 2μm)declines from 7.3 to 3.2 MPa(52.7%).At the same time,the decline fraction of strength of the composites with the thin interface is 12.1%,less than that with the thick interface(42.0%).The fiber strength also decreases after heat treatment,which may be due to the significant growth ofβ-SiC grains and critical defects.The different heat-stability of the interface with the thin and thick thickness might be related to the inconsistency of the degree of the graphitization of PyC.Compared with the composites with the thick interface,the composites with the thin interface remained higher tensile strength after heat treatment due to the better interface bonding strength.The interface with strong bonding strength could protect the fiber by postponing the decomposition of amorphous phases SiC_(x)O_(y) and hindering the generation of fiber defects.
文摘This paper studies two-dimensional analysis of the surface state effect on current gain for a 4H-SiC bipolar junction transistor （BJT）. Simulation results indicate the mechanism of current gain degradation, which is surface Fermi level pinning leading to a strong downward bending of the energy bands to form the channel of surface electron recombination current. The experimental results are well-matched with the simulation, which is modeled by exponential distributions of the interface state density replacing the single interface state trap. Furthermore, the simulation reveals that the oxide quality of the base emitter junction interface is very important for 4H-SiC BJT performance.
文摘For the manufacture of Al-based metalmatrix composites, the foundry productionroute can provide less expensive products witha greater flexibility in meeting designer’s needsamong a vaviety of fablication routes. Recent-ly, a commercially produced foundry ingot,the Duralcan composite of A356 Al alloy +20
基金supported by the National Natural Science Foundation of China(Grant Nos.61335006,61378073,and 61527817)the Beijing Municipal Science and Technology Committee,China(Grant No.Z151100003315006)Fundamental Research Funds for the Central Universities of Beijing Jiaotong University,China(Grant No.2012YJS123)
文摘On the basis of first principles calculations, we report that the type and density of charge carriers of epitaxial graphene on SiC（O001） can be deliberately controlled by decorating the buffer layer with specific atoms （i.e., F, C1, O, or N）. More importantly, a fine tuning of the doping behavior from intrinsic n-type to charge neutrality to p-type and interface magnetism is achieved via increasing the doping concentration of F atoms on the buffer layer. Our results suggest an interesting avenue to the application of epitaxial graphene in nanoscale electronic and spintronic devices.
基金the National Natural Science Foundation of China(Nos.50472010,10635010)
文摘The formation of SiC through the interface reaction between C60 and Si in a plasmaassisted chemical vapour deposition system （PACVD） is investigated with a C60 film previously deposited on Si wafers. The composition and structure of the deposited samples were characterized by micro-Raman spectroscopy and X-ray diffraction （XRD）. The results showed that SiC film was formed successfully in hydrogen plasma at a substrate temperature of 800℃ . The hydrogen atoms in plasma were found to enhance the production of SiC. Furthermore, the effects of the added CH4 on the formation of film were studied. Introduction of CH4 simultaneously with H2 at the beginning would suppress the formation of the initial layer of SiC due to a carbon-rich environment on the substrate, which would be disadvantageous to the further growth of the SiC film.
基金Project supported by the National Key Research and Development Program of China(Grant No.2016YFB0100601)the National Natural Science Foundation of China(Grant Nos.61674169 and 61974159).
文摘Effective improvement in electrical properties of NO passivated SiC/SiO2 interface after being irradiated by electrons is demonstrated.The density of interface traps after being irradiated by 100-kGy electrons decreases by about one order of magnitude,specifically,from 3×1012 cm-2·eV-1 to 4×1011 cm-2·eV-1 at 0.2 eV below the conduction band of 4H-SiC without any degradation of electric breakdown field.Particularly,the results of x-ray photoelectron spectroscopy measurement show that the C-N bonds are generated near the interface after electron irradiation,indicating that the carbon-related defects are further reduced.
基金Project supported by the National Key Basic Research Program of China(Grant No.2015CB759600)the Natural Science Basic Research Plan in Shaanxi Province,China(Grant No.2017JM6003)the National Natural Science Foundation of China(Grant Nos.61774117 61404098 and 61274079)
文摘Near-interface oxide traps （NIOTs） in 4H-SiC metal-oxide-semiconductor （MOS） structures fabricated with and without annealing in NO are systematically investigated in this paper. The properties of NIOTs in SiC MOS structures prepared with and without annealing in NO are studied and compared in detail. Two main categories of the NIOTs, the “slow” and “fast” NIOTs, are revealed and extracted. The densities of the “fast” NIOTs are determined to be 0.761011 cm-2 and 0.471011 cm-2 for the N2 post oxidation annealing （POA） sample and NO POA sample, respectively. The densities of “slow” NIOTs are 0.791011 cm-2 and 9.441011 cm-2 for the NO POA sample and N2 POA sample, respectively. It is found that the NO POA process only can significantly reduce “slow” NIOTs. However, it has a little effect on “fast” NIOTs. The negative and positive constant voltage stresses （CVS） reveal that electrons captured by those “slow” NIOTs and bulk oxide traps （BOTs） are hardly emitted by the constant voltage stress.
