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LaFe_(11.832-x)Ni_(x)Si_(1.4)合金磁热效应、腐蚀行为及防腐蚀研究
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作者 王仁浩 傅斌 +2 位作者 韩洁 王佳琪 胡洁 《材料工程》 北大核心 2025年第4期114-124,共11页
为解决La(Fe,Si)_(13)磁制冷材料在换热介质中的腐蚀问题,尝试用Ni元素部分替代Fe元素,并对替代前后LaFe_(11.832-x)Ni_(x)Si_(1.4)(x=0,0.1,0.2,0.3,质量分数,下同)合金的磁热性能及不同介质中的腐蚀行为进行了系统的研究。结果表明,... 为解决La(Fe,Si)_(13)磁制冷材料在换热介质中的腐蚀问题,尝试用Ni元素部分替代Fe元素,并对替代前后LaFe_(11.832-x)Ni_(x)Si_(1.4)(x=0,0.1,0.2,0.3,质量分数,下同)合金的磁热性能及不同介质中的腐蚀行为进行了系统的研究。结果表明,当Ni含量小于0.2时,LaFe_(11.832-x)Ni_(x)Si_(1.4)可保持良好的磁热性能,其2 T磁场下磁熵变可达15.31 J/(kg·K)(x=0.1),14.00 J/(kg·K)(x=0.2),相对磁制冷能力分别为151.6,156.8 J/kg,且磁滞损耗明显降低。在去离子水中,LaFe_(11.832-x)Ni_(x)Si_(1.4)合金的腐蚀电流Icorr随Ni含量的增加由2.6159μA/cm^(2)降低至2.0863μA/cm^(2)。而复配缓蚀剂4 g/L BTA+1 g/L Na_(2)MoO_(4)·2H_(2)O中LaFe_(11.832-x)Ni_(x)Si_(1.4)合金最大缓蚀效率为77.06%,表现出较好的缓蚀效果。LaFe_(11.832-x)Ni_(x)Si_(1.4)(x≤0.2)合金配合4 g/L BTA+1 g/L Na_(2)MoO_(4)·2H_(2)O复配缓蚀剂可作为实用化的磁制冷机工质与介质的备选组合。 展开更多
关键词 La(Fe si)_(13)合金 磁热效应 腐蚀行为 缓蚀剂
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一类具有时滞效应的SIS传染病模型
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作者 汪雨琴 谢景力 +1 位作者 赵佳璐 李嘉隆 《吉首大学学报(自然科学版)》 2025年第1期12-17,共6页
研究了一类具有时滞效应和logistic增长的SIS传染病模型的动力学性质.运用泛函微分方程基本理论和常数变易法证明了模型解的非负性和有界性,结合特征方程得到了各平衡点局部稳定的条件.以时滞τ为分支参数,通过Hopf分支理论,获得了地方... 研究了一类具有时滞效应和logistic增长的SIS传染病模型的动力学性质.运用泛函微分方程基本理论和常数变易法证明了模型解的非负性和有界性,结合特征方程得到了各平衡点局部稳定的条件.以时滞τ为分支参数,通过Hopf分支理论,获得了地方病平衡点在不稳定时发生Hopf分支的条件. 展开更多
关键词 siS传染病模型 LOGISTIC增长 时滞效应 HOPF分支 稳定性
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Grain size-dependent Mg/Si ratio effect on the microstructure and mechanical/electrical properties of Al-Mg-Si-Sc alloys 被引量:17
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作者 Shengyu Jiang Ruihong Wang 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2019年第7期1354-1363,共10页
Al-Mg-Si-Sc alloys with different Mg/Si ratio(<1.73 in wt.% vs>1.73 in wt.%) and different grain size(coarse grains vs ultrafine grains) were prepared, which allowed to investigate the grain size-dependent Mg/Si... Al-Mg-Si-Sc alloys with different Mg/Si ratio(<1.73 in wt.% vs>1.73 in wt.%) and different grain size(coarse grains vs ultrafine grains) were prepared, which allowed to investigate the grain size-dependent Mg/Si ratio effect on the microstructural evolution and concomitantly on the hardness and electrical conductivity when subjected to aging at 200℃. In the coarse-grained Al-Mg-Sc-Sc alloys, the β" precipitation within the grain interior and also the precipitation hardening were highly dependent on the Mg/Si ratio,while the electrical conductivity was slightly affected by the Mg/Si ratio. A promoted β" precipitation was found in the case of Si excess(Mg/Si ratio <1.73), much greater than in the case of Mg excess(Mg/Si ratio>1.73). While in the ultrafine-grained Al-Mg-Si-Sc alloys, the electrical conductivity rather than the hardness was more sensitive to the Mg/Si ratio. The alloy with Si excess displayed electrical conductivity much higher than its counterpart with Mg excess. This is rationalized by the grain boundary precipitation promoted by Si, which reduced the solute atoms and precipitates within the grain interior. Age softening was found in the ultrafine-grained alloy with Si excess, but the ultrafine-grained alloy with Mg excess held the hardness almost unchanged during the aging. The hardness-conductivity correlation is comprehensively discussed by considering the coupling effect of Mg/Si ratio and grain size. A strategy to simultaneously increase the hardness/strength and electrical conductivity is proposed for the Al-Mg-SiSc alloys, based on present understanding of the predominant factors on strengthening and conductivity,respectively. 展开更多
关键词 Al-Mg-si-Sc GRAIN size effect Mg/si RATIO Precipitation Hardness/conductivity
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High-temperature phase transition behavior and magnetocaloric effect in a sub-rapidly solidified La–Fe–Si plate produced by centrifugal casting 被引量:5
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作者 Zhishuai Xu Yuting Dai +5 位作者 Yue Fang Zhiping Luo Ke Han Changjiang Song Qijie Zhai Hongxing Zheng 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2018年第8期1337-1343,共7页
A sub-rapidly solidified LaFe11.6Si1.4 plate was fabricated directly from liquid by centrifugal casting method. The phase constitution, microstructure and magnetocaloric effect were investigated using backscatter scan... A sub-rapidly solidified LaFe11.6Si1.4 plate was fabricated directly from liquid by centrifugal casting method. The phase constitution, microstructure and magnetocaloric effect were investigated using backscatter scanning electron microscopy, X-ray diffraction, differential scanning calorimetry and phys- ical property measurement system. When the plate was annealed at 1373 K, rl phase was formed by a solid-state peritectoid reaction. A first-order magnetic phase transition occurred in the vicinity of 188 K, and the effective refrigeration capacities reached 203.5J/kg and 209.7J/kg in plates annealed for I h and 3 h, respectively, under a magnetic field change of 3T. It is suggested that centrifugal casting may become a new approach to prepare high-performance La-Fe-Si magnetocaloric plates for prac- tical applications, which could largely accelerate the formation of rl phase during high-temperature heat-treatment process due to refined and homogeneous honeycombed microstructure. 展开更多
关键词 La-Fe-si Magnetocaloric effect Rapid solidification Centrifugal casting Phase transition
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Effects of Si δ-Doping Condition and Growth Interruption on Electrical Properties of InP-Based High Electron Mobility Transistor Structures 被引量:3
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作者 周书星 齐鸣 +4 位作者 艾立鹍 徐安怀 汪丽丹 丁芃 金智 《Chinese Physics Letters》 SCIE CAS CSCD 2015年第9期112-115,共4页
The InGaAs/InAIAs/InP high electron mobility transistor (HEM:F) structures with lattice-matched and pseudo- morphic channels are grown by gas source molecular beam epitaxy. Effects of Si ^-doping condition and grow... The InGaAs/InAIAs/InP high electron mobility transistor (HEM:F) structures with lattice-matched and pseudo- morphic channels are grown by gas source molecular beam epitaxy. Effects of Si ^-doping condition and growth interruption on the electrical properties are investigated by changing the Si-cell temperature, doping time and growth process. It is found that the optimal Si ^-doping concentration (Nd) is about 5.0 x 1012 cm-2 and the use of growth interruption has a dramatic effect on the improvement of electrical properties. The material structure and crystal interface are analyzed by secondary ion mass spectroscopy and high resolution transmission elec- tron microscopy. An InGaAs/InAiAs/InP HEMT device with a gate length of lOOnm is fabricated. The device presents good pinch-off characteristics and the kink-effect of the device is trifling. In addition, the device exhibits fT = 249 GHa and fmax 〉 400 GHz. 展开更多
关键词 InP InGaAs Doping Condition and Growth Interruption on Electrical Properties of InP-Based High Electron Mobility Transistor Structures effects of si
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Effect of the Transient Response in Si/Ge Parallelizing PN Junction 被引量:10
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作者 Weiqi HUANGt and Chaogang CHEN(Department of Physics, Guizhou Educational College, Guiyan 550003, China)Ergang CHEN(Department of Physics, Yunnan University, Kunming 650091, China)To whom correspondence should be addressed 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 1999年第4期383-383,共1页
There are some new results about photovoltaic transient response in the new effect. We suggest a theoretical model to explain the effect reasonably. The theoretical calculation results agree with that in experiments.
关键词 PN si Ge effect of the Transient Response in si/Ge Parallelizing PN Junction
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Low-Programmable-Voltage Nonvolatile Memory Devices Based on Omega-shaped Gate Organic Ferroelectric P(VDF-TrFE) Field Effect Transistors Using p-type Silicon Nanowire Channels 被引量:1
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作者 Ngoc Huynh Van Jae-Hyun Lee +1 位作者 Dongmok Whang Dae Joon Kang 《Nano-Micro Letters》 SCIE EI CAS 2015年第1期35-41,共7页
A facile approach was demonstrated for fabricating high-performance nonvolatile memory devices based on ferroelectric-gate field effect transistors using a p-type Si nanowire coated with omega-shaped gate organic ferr... A facile approach was demonstrated for fabricating high-performance nonvolatile memory devices based on ferroelectric-gate field effect transistors using a p-type Si nanowire coated with omega-shaped gate organic ferroelectric poly(vinylidene fluoride-trifluoroethylene)(P(VDF-Tr FE)). We overcame the interfacial layer problem by incorporating P(VDF-Tr FE) as a ferroelectric gate using a low-temperature fabrication process. Our memory devices exhibited excellent memory characteristics with a low programming voltage of ±5 V, a large modulation in channel conductance between ON and OFF states exceeding 105, a long retention time greater than 3 9 104 s, and a high endurance of over 105 programming cycles while maintaining an ION/IOFFratio higher than 102. 展开更多
关键词 si nanowires Field effect transistor Ferroelectric memory
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Oxidation Effects on the Electronic Properties of Hydrogenated Silicon Clusters 被引量:1
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作者 刘光华 邓小燕 《Chinese Journal of Structural Chemistry》 SCIE CAS CSCD 2010年第5期762-768,共7页
The geometric and electronic properties of some hydrogenated silicon clusters in the presence of oxygen on the surface have been investigated.The density functional theory with generalized gradient approximation funct... The geometric and electronic properties of some hydrogenated silicon clusters in the presence of oxygen on the surface have been investigated.The density functional theory with generalized gradient approximation functional was applied in our calculations.By calculating the total energy,the double bond Si=O is shown to be more stable than the bridge bond Si-O-Si for large size oxidized clusters.The results of Mulliken population analysis indicate that a so-called passivation effect is enhanced by oxidization effects.From the energy band structures and density of states,we find that some localized states are induced by the p-orbital of O atom mainly and reduce the energy gaps substantially. 展开更多
关键词 hydrogenated si cluster oxidation effects density functional theory
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Effect of AlP master alloy on grain refinement of primary silicon in eutectic Al-Si alloys 被引量:1
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作者 XiguiSong XiufangBian +4 位作者 XiaogangQi XiangfaLiu JunyanZhang BaopeiWang LiminZhu 《Journal of University of Science and Technology Beijing》 CSCD 2004年第1期81-84,共4页
To obtain the finer primary silicon crystals, the proprietary Al-P masteralloy was adopted to modify the eutectic Al-Si alloys and the most suitable modification process wasmade in the experiments. The SEM (Scanning E... To obtain the finer primary silicon crystals, the proprietary Al-P masteralloy was adopted to modify the eutectic Al-Si alloys and the most suitable modification process wasmade in the experiments. The SEM (Scanning Electron Microscope) and DSC (Differential ScanningCalorimeter) analysis indicate that the Al-P modifier has more advantages over Cu-P and Fe-Pmodifier in easily addition, no elemental alteration and less undercooling of primary silicon'ssolidification, which suggests the Al-P master alloy is an effective modifier of eutectic Al-Sialloys. 展开更多
关键词 A1P master alloy grain refinement refining effect Al-si alloy
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Characteristics of In_(0.52)Al_(0.48)As Grown on InP(100) Substrates by Molecular Beam Epitaxy: Growth Optimisation and Effects of Si Doping
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作者 S.F.Yoon(School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyng Avenue,Singapore 639798, Rep. of Singapore) 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 1997年第2期91-98,共8页
Growth of In0.52Al0.48As epilayers on InP (100) substrates by molecular beam epitaxy at a wide range of substrate tempreatures (470~550℃) and at different Si doping levels has been carried out. Low temperature photol... Growth of In0.52Al0.48As epilayers on InP (100) substrates by molecular beam epitaxy at a wide range of substrate tempreatures (470~550℃) and at different Si doping levels has been carried out. Low temperature photoluminescence (PL) and double-axis X-ray diffraction (XRD) analyses shaw a strong dependence of the PL and XRD linewidths, XRD intensity ratio (Lepi/Isub), and lattice-mismatch on the substrate temperature. The X-ray diffraction peaks of samples grown at law temperatures show a composition of smaller peaks, indicating the presence of disorder due to alloy clustering. Raman scattering measurements of the same samples show an additional higher energy mode at 273 cm-1 in addition to the InAs-like and AlAs-like longitudinal-optic (LO) phonon modes. Samples doped with Si show an inverted S-shaped dependence of the PL peak energy variation with the temperature which weakens at high doping levels due to a possible reduction in the donor binding energy. Supported be observations of a reduction in both the AlAs-like and InAs-like LO phonon frequencies and a broadening of the LO phonon line shape as the doping level is increased, the PL intensity also shows in increasing degrees at higher doping levels, a temperature dependence which is characteristic of disordered and amorphous materials. 展开更多
关键词 As Grown on InP Characteristics of In Growth Optimisation and effects of si Doping Substrates by Molecular Beam Epitaxy INP AL si
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EFFECT OF DYNAMIC RECRYSTALLIZATION ON SHAPE MEMORY EFFECT IN Fe-Mn-Si BASED ALLOYS 被引量:2
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作者 L.J. Rong Y. Y. Li and C.X. Shi(Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110015, China) 《Acta Metallurgica Sinica(English Letters)》 SCIE EI CAS CSCD 1996年第5期361-366,共6页
Improvement of shape, memory effect (SME) in Fe-Mn-Si based alloys has been investigated, compared with that by conventional 'training' treatment. It is found that SME in Fe-Mn-Si alloy can be greatly improved... Improvement of shape, memory effect (SME) in Fe-Mn-Si based alloys has been investigated, compared with that by conventional 'training' treatment. It is found that SME in Fe-Mn-Si alloy can be greatly improved by ausforming and 3.8%recovery strain and 2.2% complete recovery strain can be reached by ausforming at 973 K when dynamic recrystallization has just occurred. The mechanism for the improvement of SME is proposed. 展开更多
关键词 shape memory effect dynamic recrystallization Fe-Mn-si based Alloy
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Effects of rare earth metal addition on microstructure of hot-dip 55%Al-Zn-Si coatings
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作者 WU Guangxin,JIN Feng,LI Bing,CHEN Jilong,ZHANG Jieyu and LI Qian Shanghai Key Laboratory of Modern Metallurgy & Materials Processing, Shanghai University,Shanghai 200072,China 《Baosteel Technical Research》 CAS 2010年第S1期40-,共1页
Optical microscope(OM),scanning electron microscope(SEM),energy dispersive spectrometer (EDS) and X-ray Diffraction(XRD) were used to study the effects of rare earth on the microstructural characteristics of 55%Al-Zn-... Optical microscope(OM),scanning electron microscope(SEM),energy dispersive spectrometer (EDS) and X-ray Diffraction(XRD) were used to study the effects of rare earth on the microstructural characteristics of 55%Al-Zn-1.6%Si hot -dip coatings on steel.The results of OM,SEM and EDS showed that by adding RE into the 55%Al-Zn-1.6%Si bath,the saw-toothed shape of intermetallic reaction layer of coating became smooth,and the thickness of the overlay and intermetallic reaction layer decreased.The XRD results revealed that the intermetallic reaction layer was comprised of two different regions,a bright phase closest to the steel substrate with phases of Fe_2Al_3 and a dark phase closest to the metallic coating with phases of FeAl_3/α-Fe-Al-Si. 展开更多
关键词 55%Al-Zn-1.6%si coating effect of rare earth microstructure of intermetallic reaction layer
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Ge/Si heterojunction L-shape tunnel field-effect transistors with hetero-gate-dielectric
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作者 CongLi Zhi-Rui Yan +2 位作者 Yi-Qi Zhuang Xiao-Long Zhao Jia-Min Guo 《Chinese Physics B》 SCIE EI CAS CSCD 2018年第7期572-579,共8页
A Ge/Si heterojunction L-shaped tunnel field-effect transistor combined with hetero-gate-dielectric (GHL-TFET) is proposed and investigated by TCAD simulation. Current-voltage characteristics, energy-band diagrams, ... A Ge/Si heterojunction L-shaped tunnel field-effect transistor combined with hetero-gate-dielectric (GHL-TFET) is proposed and investigated by TCAD simulation. Current-voltage characteristics, energy-band diagrams, and the distri- bution of the band-to-band tunneling (BTBT) generation rate of GHL-TFET are analyzed. In addition, the effect of the vertical channel width on the ON-current is studied and the thickness of the gate dielectric is optimized for better suppression of ambipolar current. Moreover, analog/RF figure-of-merits of GHL-TFET are also investigated in terms of the cut-off frequency and gain bandwidth production. Simulation results indicate that the ON-current of GHL-TFET is increased by about three orders of magnitude compared with that of the conventional L-shaped TFET. Besides, the introduction of the hetero-gate-dielectric not only suppresses the ambipolar current effectively but also improves the analog/RF performance drastically. It is demonstrated that the maximum cut-off frequency of GHL-TFET is about 160 GHz, which is 20 times higher than that of the conventional L-shaped TFET. 展开更多
关键词 tunnel field-effect transistors Ge/si heterojunction hetero-gate-dielectric ambipolar effect
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Effects of Pr substitution on the hydrogenating process and magnetocaloric properties of La1-xPrxFe11.4Si1.6Hy hydrides 被引量:1
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作者 许磊 赵金良 +4 位作者 杨静洁 张红国 刘丹敏 岳明 蒋毅坚 《Chinese Physics B》 SCIE EI CAS CSCD 2017年第6期384-388,共5页
In this paper, we study the effects of Pr substitution on the hydrogenating process and magnetocaloric properties of La(1-x)PrxFe11.4Si1.6Hy hydrides. The powder x-ray diffraction patterns of the La1-xPrxFe11.4Si1.6... In this paper, we study the effects of Pr substitution on the hydrogenating process and magnetocaloric properties of La(1-x)PrxFe11.4Si1.6Hy hydrides. The powder x-ray diffraction patterns of the La1-xPrxFe11.4Si1.6 and its hydrides show that each of the alloys is crystallized into the single phase of cubic Na Zn13-type structure. There are hydrogen-absorbing plateaus under 0.4938 MPa and 0.4882 MPa in the absorbing curves for the La0.8Pr0.2Fe11.4Si1.6 and La0.6Pr0.4Fe11.4Si1.6 compounds. The releasing processes lag behind the absorbing process, which is obviously different from the coincidence between absorbing and releasing curves of the La Fe11.4Si1.6 compound. The remnant hydrogen content for La0.6Pr0.4Fe11.4Si1.6 is significantly more than that for La0.8Pr0.2Fe11.4Si1.6 after hydrogen desorption, indicating that more substitutions of Pr for La are beneficial to retaining more hydrogen atoms in the alloys. The values of maximum magnetic entropy change are 14.91 J/kg·K and 17.995 J/kg·K for La0.8Pr0.2Fe11.4Si1.6H0.13 and La0.6Pr0.4Fe11.4Si1.6H0.87,respectively. 展开更多
关键词 La(Fe si)13 compounds hydrogenating process magnetocaloric effect magnetic refrigeration materials
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Mn-Fe-P-Si合金磁热性能的研究进展
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作者 骆琳 沈红先 +2 位作者 张伦勇 姜思达 孙剑飞 《稀有金属材料与工程》 SCIE EI CAS CSCD 北大核心 2024年第2期581-592,共12页
作为传统蒸气-压缩技术的潜在替代技术,磁制冷技术因高效、环保而备受关注。磁制冷技术基于磁性材料的磁热效应。磁热材料作为磁制冷机的关键组成部分,其性能制约着磁制冷技术的发展。在磁热材料中,Mn-Fe-P-Si合金由于具有大磁热效应、... 作为传统蒸气-压缩技术的潜在替代技术,磁制冷技术因高效、环保而备受关注。磁制冷技术基于磁性材料的磁热效应。磁热材料作为磁制冷机的关键组成部分,其性能制约着磁制冷技术的发展。在磁热材料中,Mn-Fe-P-Si合金由于具有大磁热效应、成本低和磁热性能可调控等优势,被认为是极具发展前景的室温磁制冷材料,受到研究者的广泛关注。本文主要综述了近年来国内外关于Mn-Fe-P-Si合金磁热性能及其调控的相关研究进展,为Mn-Fe-P-Si磁制冷材料的进一步研究提供参考。 展开更多
关键词 磁制冷 Mn-Fe-P-si 室温 磁热效应
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Pd-Si非晶合金动力学非均匀性的对称与有序
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作者 陈贝 王小云 +4 位作者 刘涛 高明 文大东 邓永和 彭平 《物理学报》 SCIE EI CAS CSCD 北大核心 2024年第24期210-217,共8页
微结构特征和结构演化机制是非晶态材料的研究重点,非晶合金的动力学行为可以揭示非晶合金的形成过程和结构演化机制.本文采用分子动力学模拟方法探讨了在Pd-Si非晶合金体系中,Pd原子的浓度对Si原子扩散的阻碍作用及其对体系对称性和有... 微结构特征和结构演化机制是非晶态材料的研究重点,非晶合金的动力学行为可以揭示非晶合金的形成过程和结构演化机制.本文采用分子动力学模拟方法探讨了在Pd-Si非晶合金体系中,Pd原子的浓度对Si原子扩散的阻碍作用及其对体系对称性和有序度的影响.并对与原子扩散、体系的对称性及有序度有关的参数进行了分析,结果表明,增加Pd原子的浓度会导致Si原子的扩散受到更明显的阻碍,表现为Si原子的非高斯参数异常峰的峰值增大和位移的标准差减小.这一现象表明,增加Pd原子浓度会增强了Si原子的牢笼效应,限制Si原子的扩散.此外,Pd原子浓度的增加促进了Pd-Si非晶合金中不饱和键型向饱和键型的转变,且体系的构型熵降低,提高了Pd-Si非晶合金的局域对称性和有序度,使得Si原子处于封闭性更强、对称性更高、结构更加紧凑的团簇结构中,增强了其牢笼效应和局域对称性.本文探讨了Pd原子浓度对Si原子的扩散行为及局域环境的影响机制,为深入理解非晶合金的结构演化提供了新的视角. 展开更多
关键词 分子动力学 Pd-si 非晶合金 原子浓度 牢笼效应 局域对称性
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Effect of A1P master alloy on grain refinement of primary silicon in eutectic Al-Si alloys
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作者 SONG Xigui, BIAN Xiufang, QI Xiaogang, LIU Xiangfa, ZHANG Junyan, WANG Baopei, andZHU Limin 《Rare Metals》 SCIE EI CAS CSCD 2004年第1期96-96,共1页
To obtain the finer primary silicon crystals, the proprietary Al-P master alloy was adopted to modify the eutectic Al-Si alloys and the most suitable modification process was made in the experiments. The SEM (Scanning... To obtain the finer primary silicon crystals, the proprietary Al-P master alloy was adopted to modify the eutectic Al-Si alloys and the most suitable modification process was made in the experiments. The SEM (Scanning Electron Microscope) and DSC (Differential Scanning Calorimeter) analysis indicate that the Al-P modifier has more advantages over Cu-P and Fe-P modifier in easily addition, no elemental alteration and less undercooling of primary silicon’s solidification, which suggests the Al-P master alloy is an effective modifier of eutectic Al-Si alloys. 展开更多
关键词 AlP master alloy grain refinement refining effect Al-si alloy
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Effects of Warm Deformation on Mechanical Properties of TRIP Aided Fe-C-Mn-Si Multiphase Steel
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作者 TIAN Yong LI Zhuan~ 《Journal of Iron and Steel Research International》 SCIE EI CAS CSCD 2012年第6期47-52,共6页
Warm deformation tests were performed using a kind of tubby heater. The microstructures and mechanical properties of an Fe-C-Mn-Si multiphase steel resulting from different warm deformation temperatures were investiga... Warm deformation tests were performed using a kind of tubby heater. The microstructures and mechanical properties of an Fe-C-Mn-Si multiphase steel resulting from different warm deformation temperatures were investiga- ted by using LOM (light optical microscopy), SEM and XRD. The results indicated that the microstructure contai- ning polygonal ferrite, granular bainite and a significant amount of the stable retained austenite can be obtained through hot deformation and subsequent austempering. Warm deformation temperature affects the mechanical prop- erties of the hot rolled TRIP steels. Ultimate tensile strength balance reached maximum (881 MPa) when the speci- men was deformed at 250 ~C, and the total elongation and strength-ductility reached maximum (38% and 28 614 MPa ~ ~, respectively) at deforming temperature of 100 ~C. Martensite could nucleate when austenite was deformed above M~, because mechanical driving force compensates the decrease of chemical driving force. The TRIP effect occurs in the Fe-C-Mn-Si multiphase steel at deforming temperature ranging from 15 to 350 ~C. The results of the effects of warm deformation on the mechanical properties of the Fe-C-Mn-Si multiphase steel can provide theoretical basis for the ap- plications and the warm working of the hot rolled TRIP sheet steels in industrial manufacturing. 展开更多
关键词 warm deformation Fe-C-Mn-si multiphase steel TRIP effect mechanical property
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SHAPE MEMORY EFFECT OF POLYCRYSTALLINE Fe-Mn-Si ALLOYS
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作者 ZHAO Qinghua TAN Shusong Central South University of Technology,Changsha,China Department of Materials,Central South University of Technology,Changsha,Hunan,China 《Acta Metallurgica Sinica(English Letters)》 SCIE EI CAS CSCD 1989年第3期228-230,共3页
The influence of quenching temperature on the shape memory effect(SME)of the Fe-Mn-Si polycrystalline alloys and their martensitic transformation temperature have been studied.The SME of the hot-rolled specimen may be... The influence of quenching temperature on the shape memory effect(SME)of the Fe-Mn-Si polycrystalline alloys and their martensitic transformation temperature have been studied.The SME of the hot-rolled specimen may be remarkably enhanced by selecting quenching temperature of 600—800℃.It has been shown that SME is influenced not only by the distribution of ε-phase morphology but also by its pre-existence. 展开更多
关键词 shape memory effect Fe-Mn-si alloy martensitic transformation
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Influence of Predeformation on Shape Memory Effect in a Fe-Mn-Si-Ni Polycrstalline Alloy
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作者 王永前 来忠红 +1 位作者 杨建华 赵连城 《Journal of Harbin Institute of Technology(New Series)》 EI CAS 1996年第4期66-68,共3页
InfluenceofPredeformationonShapeMemoryEffectinaFe-Mn-Si-NiPolycrstallineAlloyWANGYongqian;LAIZhonghong;YANGJ... InfluenceofPredeformationonShapeMemoryEffectinaFe-Mn-Si-NiPolycrstallineAlloyWANGYongqian;LAIZhonghong;YANGJianhua;ZHAOLianch... 展开更多
关键词 ss: SHAPE memeroy effect Fe-Mn-si-Ni ALLOY PREDEFORMATION
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