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Threshold and saturation properties of the field-induced twist cell with two parameters weak anchoring boundaries
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作者 关荣华 孙玉宝 《Chinese Physics B》 SCIE EI CAS CSCD 2006年第5期1041-1050,共10页
On the basis of two-parameter formula of weak surface coupling anchoring energy of nematic liquid crystals proposed by Zhao et al recently, the general torque equilibrium equation and boundary conditions of the direct... On the basis of two-parameter formula of weak surface coupling anchoring energy of nematic liquid crystals proposed by Zhao et al recently, the general torque equilibrium equation and boundary conditions of the director have been obtained and the threshold field as well as the saturation field of the field-induced twist cell have been analysed for three kinds of configurations, i.e. homogeneous, splay and Pi ceils formed by different rubbing conditions and pretilt angles. The results indicated that the polar anchoring has no effect on the threshold field. It is determined only by the twist anchoring and pretilt angle. But, the polar anchoring and twist anchoring are coupling with each other and have a great influence on the saturation field. The formulae for calculating the threshold field and saturation field are given. These results will be very useful in understanding surface physics and the design of liquid crystal cells. 展开更多
关键词 threshold field saturation field two-parameter formula nonzero pretilt angle
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Rapid transition of the hole Rashba effect from strong field dependence to saturation in semiconductor nanowires
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《Science Foundation in China》 CAS 2017年第4期30-,共1页
With the support by the National Natural Science Foundation of China,a study by the research group led by Prof.Luo Junwei(骆军委)from the Institute of Semiconductors,Chinese Academy of Sciences discovered a rapid tran... With the support by the National Natural Science Foundation of China,a study by the research group led by Prof.Luo Junwei(骆军委)from the Institute of Semiconductors,Chinese Academy of Sciences discovered a rapid transition of the hole Rashba effect from strong field dependence to saturation 展开更多
关键词 HRE Rapid transition of the hole Rashba effect from strong field dependence to saturation in semiconductor nanowires
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