It is shown that traps are generated asymmetrically in the thin gate oxides with different thickness during high field degradation,as well as the multi-mechanism plays role in the Stress Induced Leakage Current ...It is shown that traps are generated asymmetrically in the thin gate oxides with different thickness during high field degradation,as well as the multi-mechanism plays role in the Stress Induced Leakage Current (SILC).These factors perform differently in gate oxide of different thickness.A comparison is drew between several analyzing models.Trap assisted tunneling is preferred for thinner samples,while Pool-Frankel like mechanism or thermal emission mechanism should apply to the thick ones.展开更多
Stress-induced leakage current (SILC) of ultrathin gate oxide is investigated by observing the generation of interface traps for n-MOSFET and p-MOSFET under hot-carrier stress.It is found experimentally that there is ...Stress-induced leakage current (SILC) of ultrathin gate oxide is investigated by observing the generation of interface traps for n-MOSFET and p-MOSFET under hot-carrier stress.It is found experimentally that there is linear correlation between the generation of interface traps and SILC for both types of MOSFET with different channel lengths (including 1,0.5,0.275,and 0.135μm) and different gate oxide thickness (4nm and 2.5nm).These experimental evidences show that the SILC has a strong dependence on interface traps.展开更多
By measurement,we investigate the characteristics and location of gate oxide damage induced by snapback stress. The damage incurred during stress causes device degradation that follows an approximate power law with st...By measurement,we investigate the characteristics and location of gate oxide damage induced by snapback stress. The damage incurred during stress causes device degradation that follows an approximate power law with stress time. Oxide traps generated by stress will cause the increase of stress-induced leakage current and the decrease of Qbd （charge to breakdown）,and it may also cause the degradation of off-state drain leakage current. Stress-induced gate oxide damage is located not only in the drain side but also in the source side. The tertiary electrons generated by hot holes move toward Si-SiO2 interface under the electrical field toward the substrate,which explains the source side gate oxide damage.展开更多
The degradation of MOSFETs under high field stress has been investigated for a l ong time. The degradation is due to the newly generated traps. As the gate thick ness scaled down rapidly, a conventional method for det...The degradation of MOSFETs under high field stress has been investigated for a l ong time. The degradation is due to the newly generated traps. As the gate thick ness scaled down rapidly, a conventional method for detecting oxide traps, such as C-V or subthreshold swing, is no longer effective. Some new phenome na a lso appear, such as Stress Induced Leakage Current (SILC) and soft-breakdown. T he oxide traps’ behavior and their characteristics are the key problems in the s tudy of degradation. By extracting the change of transition coefficients from th e I-V curve and using the PDO (Proportional Differential Operator) meth od, various oxide traps can be distinguished and as would be helpful in the dete rmination of trap behavior changes during the degradation process.展开更多
Objectives: We measured health inequalities among employed Luxembourg residents over time and the socio-economic and work-related determinants. Design and Setting: Longitudinal data were obtained from the Socio-econom...Objectives: We measured health inequalities among employed Luxembourg residents over time and the socio-economic and work-related determinants. Design and Setting: Longitudinal data were obtained from the Socio-economic Liewen zu Lëtzebuerg/European Union Survey on Income and Living Conditions, which has been conducted each year since 2003 in Luxembourg. Participants: Participants comprised 727 Luxembourg residents (58% men), aged between 21 and 55 years in 2003, who were employed between 2003 and 2012. Primary and Secondary Outcomes Measured: The variable of interest was self-reported health. We used transition indicators on work-related factors to consider changes that individuals may have experienced in their job over this period. Results: People who moved from a part-time to a full-time contract (odds ratio (OR): 5.52, confidence interval (CI): 1.55 - 19.73), and those who moved from the 3rd or 4th quartile of earnings to the 1st or 2nd quartile (OR: 2.48, CI: 1.02 - 6.05) between 2003 and 2012, had a higher risk of being in poor health in 2012. The risk of deterioration in self-reported health in 2012 among people who were healthy in 2003 was associated with the type of contract, economic activity, and occupation. Conclusion: Health inequalities occur among employed people in Luxembourg. Their importance varies according to work-related characteristics and economic activity. Our findings showed that declined health status was associated with contract type, profession, and economic activity. This suggests that measures should be taken to maintain good health for people working in these specific occupations or economic sectors (e.g. preventive action, reduction of risk exposure, change of occupation in the same company, and so on).展开更多
文摘It is shown that traps are generated asymmetrically in the thin gate oxides with different thickness during high field degradation,as well as the multi-mechanism plays role in the Stress Induced Leakage Current (SILC).These factors perform differently in gate oxide of different thickness.A comparison is drew between several analyzing models.Trap assisted tunneling is preferred for thinner samples,while Pool-Frankel like mechanism or thermal emission mechanism should apply to the thick ones.
文摘Stress-induced leakage current (SILC) of ultrathin gate oxide is investigated by observing the generation of interface traps for n-MOSFET and p-MOSFET under hot-carrier stress.It is found experimentally that there is linear correlation between the generation of interface traps and SILC for both types of MOSFET with different channel lengths (including 1,0.5,0.275,and 0.135μm) and different gate oxide thickness (4nm and 2.5nm).These experimental evidences show that the SILC has a strong dependence on interface traps.
文摘By measurement,we investigate the characteristics and location of gate oxide damage induced by snapback stress. The damage incurred during stress causes device degradation that follows an approximate power law with stress time. Oxide traps generated by stress will cause the increase of stress-induced leakage current and the decrease of Qbd （charge to breakdown）,and it may also cause the degradation of off-state drain leakage current. Stress-induced gate oxide damage is located not only in the drain side but also in the source side. The tertiary electrons generated by hot holes move toward Si-SiO2 interface under the electrical field toward the substrate,which explains the source side gate oxide damage.
基金The Special funds for Major State Basic Research Projects under Grant G2000036504,andin part by National High Technology Research and Development Program of China under Grant2003AA1Z1370
文摘The degradation of MOSFETs under high field stress has been investigated for a l ong time. The degradation is due to the newly generated traps. As the gate thick ness scaled down rapidly, a conventional method for detecting oxide traps, such as C-V or subthreshold swing, is no longer effective. Some new phenome na a lso appear, such as Stress Induced Leakage Current (SILC) and soft-breakdown. T he oxide traps’ behavior and their characteristics are the key problems in the s tudy of degradation. By extracting the change of transition coefficients from th e I-V curve and using the PDO (Proportional Differential Operator) meth od, various oxide traps can be distinguished and as would be helpful in the dete rmination of trap behavior changes during the degradation process.
文摘Objectives: We measured health inequalities among employed Luxembourg residents over time and the socio-economic and work-related determinants. Design and Setting: Longitudinal data were obtained from the Socio-economic Liewen zu Lëtzebuerg/European Union Survey on Income and Living Conditions, which has been conducted each year since 2003 in Luxembourg. Participants: Participants comprised 727 Luxembourg residents (58% men), aged between 21 and 55 years in 2003, who were employed between 2003 and 2012. Primary and Secondary Outcomes Measured: The variable of interest was self-reported health. We used transition indicators on work-related factors to consider changes that individuals may have experienced in their job over this period. Results: People who moved from a part-time to a full-time contract (odds ratio (OR): 5.52, confidence interval (CI): 1.55 - 19.73), and those who moved from the 3rd or 4th quartile of earnings to the 1st or 2nd quartile (OR: 2.48, CI: 1.02 - 6.05) between 2003 and 2012, had a higher risk of being in poor health in 2012. The risk of deterioration in self-reported health in 2012 among people who were healthy in 2003 was associated with the type of contract, economic activity, and occupation. Conclusion: Health inequalities occur among employed people in Luxembourg. Their importance varies according to work-related characteristics and economic activity. Our findings showed that declined health status was associated with contract type, profession, and economic activity. This suggests that measures should be taken to maintain good health for people working in these specific occupations or economic sectors (e.g. preventive action, reduction of risk exposure, change of occupation in the same company, and so on).
