A novel polysilicon-assisted silicon-controlled rectifier （SCR） is presented and analyzed in this paper, which is fabricated in HHNEC＇s 0.18μm EEPROM process. The polysilicon-assisted SCRs take advantage of polysi...A novel polysilicon-assisted silicon-controlled rectifier （SCR） is presented and analyzed in this paper, which is fabricated in HHNEC＇s 0.18μm EEPROM process. The polysilicon-assisted SCRs take advantage of polysilicon layer to help bypass electro-static discharge （E S D） current without occupying extra layout area. TLP current-voltage （I-V） measurement results show that given the same layout areas, robustness performance of polysilicon-assisted SCRs can be improved to 3 times of conventional MLSCR＇s. Moreover, one-finger such polysilicon-assisted SCRs, which occupy only 947 [3mz layout area, can undergo 7-kV HBM ESD stress. Results further demonstrate that the S-type I-V characteristics of polysilicon-assisted SCRs are adjustable to different operating conditions by changing the device dimensions. Compared with traditional SCRs, this new SCR can bypass more ESD currents and consumes smaller IC area.展开更多
A new type of plasma arc equipment with four functions including plasma arc welding, cutting, spraying and a surfacing process was designed and manufactured. To obtain good processing stability and multifunction integ...A new type of plasma arc equipment with four functions including plasma arc welding, cutting, spraying and a surfacing process was designed and manufactured. To obtain good processing stability and multifunction integration, a silicon controlled rectifier (SCR), and the programmable controller (PC) were introduced. The operation of this new machine shows that it has the advantage of simple circuit design, flexible control pattern, low fault rate and easy maintenance.展开更多
The silicon-controlled rectifier（SCR） device is known as an efficient electrostatic discharge（ESD） protection device due to the highest ESD robustness in the smallest layout area. However, SCR has some drawbacks,s...The silicon-controlled rectifier（SCR） device is known as an efficient electrostatic discharge（ESD） protection device due to the highest ESD robustness in the smallest layout area. However, SCR has some drawbacks,such as high trigger voltage and low holding voltage. In order to reduce the trigger voltage of the SCR device for ESD protection, a new heterojunction bipolar transistor（HBT） trigger silicon controlled rectifier（HTSCR） device in 0.35 m Si Ge Bi CMOS technology are proposed. The underlying physical mechanisms critical to the trigger voltage are demonstrated based on transmission line pulsing（TLP） measurement and physics-based simulation results. The simulation results prove that the trigger voltage of the HTSCR is decided by the collector-to-emitter breakdown voltage of the HBT structure in floating base configuration. The ESD experiment test results demonstrate the HTSCR can offer superior performance with a small trigger voltage, an adjustable holding voltage and a high ESD robustness. In comparison to the conventional MLSCR, the trigger voltage of the fabricated HTSCR can reduce to less than 50% of that of the MLSCR, and the I_（t2） of the HBT trigger SCR is 80% more than that of the MLSCR.展开更多
Purpose In order to make BEPC-II to run at a higher energy,the Institute of High Energy Physics undertook an upgrading project.One of the important factors limiting the energy boost is the power and performance of the...Purpose In order to make BEPC-II to run at a higher energy,the Institute of High Energy Physics undertook an upgrading project.One of the important factors limiting the energy boost is the power and performance of the dipole magnet power supplies;therefore,these four magnet power supplies are developed for the BEPC-II upgrading.Methods The power supplies adopt topologies of thyristor rectifiers to realize a high-power output.In the control unit of each power supply,a digital current closed loop is adopted,and the key components in the feedback loop are thermostatically controlled.In order to improve the performances of the power supplies,analog voltage regulators are added to the inner control loops.Results These four power supplies have been tested and have already been officially used in BEPC-II,and their powers have reached the requirements of the upgrading.The test results of the current stability are described and shown in this paper,which testifies that the stabilities meet the design parameters.Conclusions A digital control is applied to each SCR rectifier control.The performances of the power supplies are improved by the combination of digital current control loops and the analog voltage control loops,which makes the performances of the dipole magnet power supplies meet the requirements of the upgrading project.展开更多
文摘A novel polysilicon-assisted silicon-controlled rectifier （SCR） is presented and analyzed in this paper, which is fabricated in HHNEC＇s 0.18μm EEPROM process. The polysilicon-assisted SCRs take advantage of polysilicon layer to help bypass electro-static discharge （E S D） current without occupying extra layout area. TLP current-voltage （I-V） measurement results show that given the same layout areas, robustness performance of polysilicon-assisted SCRs can be improved to 3 times of conventional MLSCR＇s. Moreover, one-finger such polysilicon-assisted SCRs, which occupy only 947 [3mz layout area, can undergo 7-kV HBM ESD stress. Results further demonstrate that the S-type I-V characteristics of polysilicon-assisted SCRs are adjustable to different operating conditions by changing the device dimensions. Compared with traditional SCRs, this new SCR can bypass more ESD currents and consumes smaller IC area.
文摘A new type of plasma arc equipment with four functions including plasma arc welding, cutting, spraying and a surfacing process was designed and manufactured. To obtain good processing stability and multifunction integration, a silicon controlled rectifier (SCR), and the programmable controller (PC) were introduced. The operation of this new machine shows that it has the advantage of simple circuit design, flexible control pattern, low fault rate and easy maintenance.
基金Project supported by the Central Universities Fundamental Research Project(No.ZYGX2015J035)the Sichuan Science and Technology Support Project(No.2016GZ0115)
文摘The silicon-controlled rectifier（SCR） device is known as an efficient electrostatic discharge（ESD） protection device due to the highest ESD robustness in the smallest layout area. However, SCR has some drawbacks,such as high trigger voltage and low holding voltage. In order to reduce the trigger voltage of the SCR device for ESD protection, a new heterojunction bipolar transistor（HBT） trigger silicon controlled rectifier（HTSCR） device in 0.35 m Si Ge Bi CMOS technology are proposed. The underlying physical mechanisms critical to the trigger voltage are demonstrated based on transmission line pulsing（TLP） measurement and physics-based simulation results. The simulation results prove that the trigger voltage of the HTSCR is decided by the collector-to-emitter breakdown voltage of the HBT structure in floating base configuration. The ESD experiment test results demonstrate the HTSCR can offer superior performance with a small trigger voltage, an adjustable holding voltage and a high ESD robustness. In comparison to the conventional MLSCR, the trigger voltage of the fabricated HTSCR can reduce to less than 50% of that of the MLSCR, and the I_（t2） of the HBT trigger SCR is 80% more than that of the MLSCR.
文摘Purpose In order to make BEPC-II to run at a higher energy,the Institute of High Energy Physics undertook an upgrading project.One of the important factors limiting the energy boost is the power and performance of the dipole magnet power supplies;therefore,these four magnet power supplies are developed for the BEPC-II upgrading.Methods The power supplies adopt topologies of thyristor rectifiers to realize a high-power output.In the control unit of each power supply,a digital current closed loop is adopted,and the key components in the feedback loop are thermostatically controlled.In order to improve the performances of the power supplies,analog voltage regulators are added to the inner control loops.Results These four power supplies have been tested and have already been officially used in BEPC-II,and their powers have reached the requirements of the upgrading.The test results of the current stability are described and shown in this paper,which testifies that the stabilities meet the design parameters.Conclusions A digital control is applied to each SCR rectifier control.The performances of the power supplies are improved by the combination of digital current control loops and the analog voltage control loops,which makes the performances of the dipole magnet power supplies meet the requirements of the upgrading project.
