YBa2Cu3O7-x（YBCO） films with co-doping BaTiO3（BTO） and Y2O3 nanostructures were prepared by metal organic deposition using trifluoroacetates（TFA-MOD）. The properties of the BTO/Y2O3co-doped YBCO films with diffe...YBa2Cu3O7-x（YBCO） films with co-doping BaTiO3（BTO） and Y2O3 nanostructures were prepared by metal organic deposition using trifluoroacetates（TFA-MOD）. The properties of the BTO/Y2O3co-doped YBCO films with different excess yttrium have been systematically studied by x-ray diffraction（XRD）, Raman spectra, and scanning electron microscope（SEM）. The optimized content of yttrium excess in the BTO/Y2O3co-doped YBCO films is 10 mol.%, and the critical current density is as high as - 17 mA/cm^2（self-field, 65 K） by the magnetic signal. In addition, the Y2Cu2O5 was formed when the content of yttrium excess increases to 24 mol.%, which may result in the deterioration of the superconducting properties and the microstructure. The unique combination of the different types of nanostructures of BTO and Y2O3 in the doped YBCO films, compared with the pure YBCO films and BTO doped YBCO films, enhances the critical current density（JC） not only at the self-magnetic field, but also in the applied magnetic field.展开更多
Y2O3：Er^3＋ films were prepared by a simple sol-gel process. The structural properties of Y2O3：Er^3＋ films were characterized with X-ray diffraction, Fourier transform infrared spectroscopy and field emission scann...Y2O3：Er^3＋ films were prepared by a simple sol-gel process. The structural properties of Y2O3：Er^3＋ films were characterized with X-ray diffraction, Fourier transform infrared spectroscopy and field emission scanning electron microscopy. The results indicated that the Y2O3：Er^3＋ films might have high upconversion efficiency because of their low vibrational energy. Under 785 and 980 nm laser excitation, the samples showed green （^2H11/2→^4I15/2, ^4S3/2→^4I15/2） and red （^4F9/2→^4I15/2） upconversion emissions. The upconversion mechanisms were studied in detail through laser power dependence. Excited state absorption and energy transfer process were discussed as possible upconversion mechanisms. The cross relaxation process in Er^3＋ was also investigated.展开更多
The oxidation kinetics,surface morphology and phase structure of oxide films grown on 25Cr20Ni alloy in air-H2O and H2-H2O atmospheres at 900 ℃ for 20 h were investigated.The anti-coking performance and resistance to...The oxidation kinetics,surface morphology and phase structure of oxide films grown on 25Cr20Ni alloy in air-H2O and H2-H2O atmospheres at 900 ℃ for 20 h were investigated.The anti-coking performance and resistance to carburization of the two oxide films were compared using 25Cr20Ni alloy tubes with an inner diameter of 10 mm and a length of 850 mm in a bench scale naphtha steam pyrolysis unit.The oxidation kinetics followed a parabolic law in an air-H2O atmosphere and a logarithm law in a H2-H2O atmosphere in the steady-state stage.The oxide film grown in the air-H2O atmosphere had cracks where the elements Fe and Ni were enriched and the un-cracked area was covered with octahedral-shaped MnCr2O4 spinels and Cr1.3Fe0.7O3 oxide clusters,while the oxide film grown in the H2-H2O atmosphere was intact and completely covered with dense standing blade MnCr2O4 spinels.In the pyrolysis tests,the anti-coking performance and resistance to carburization of the oxide film grown in the H2-H2O atmosphere were far better than that in the air-H2O atmosphere.The mass of coke formed in the oxide film grown in the H2-H2O atmosphere was less than 10％ of that in the air-H2O atmosphere.The Cr1.3Fe0.7O3 oxide clusters converted into Cr23C6 carbides and the cracks were filled with carbon in the oxide film grown in the air-H2O atmosphere after repeated coking and decoking tests,while the dense standing blade MnCr2O4 spinels remained unchanged in the oxide film grown in the H2-H2O atmosphere.The ethylene,propylene and butadiene yields in the pyrolysis tests were almost the same for the two oxide films.展开更多
The In 2 O 3 : W (IWO) films with different W content were deposited on glass substrate using direct current sputtering method. The structure, surface morphology, and optical and electrical properties were investigate...The In 2 O 3 : W (IWO) films with different W content were deposited on glass substrate using direct current sputtering method. The structure, surface morphology, and optical and electrical properties were investigated. Results showed that both the carrier concentration and carrier mobility were increased with the doping of W. The IWO film with the lowest resistivity of 1.0×10 3 cm, highest carrier mobilityof 43.7 cm 2 V 1 s 1 and carrier concentration of 1.4×10 20 cm 3 was obtained at the content of 2.8 wt.%. The average optical transmittance from 300 nm to 900 nm reached 87.6%.展开更多
Cu2O/TiOa/Pt three-layer films were deposited on glass substrates using magnetron sputtering method. The surface morphology and the optical properties of the composite film were characterized by X-ray diffraction （XR...Cu2O/TiOa/Pt three-layer films were deposited on glass substrates using magnetron sputtering method. The surface morphology and the optical properties of the composite film were characterized by X-ray diffraction （XRD）, scanning electron microscopy （SEM）, ultraviolet- visible spectroscopy （UV-Vis） and photoluminescence spectroscopy （PL）. The photocatalytic activity of the samples was evaluated by the photocatalytic degradation of methyl orange （MO） aqueous solution under visible light irradiation. The results indicate that the Cu2O/TiO2/Pt composite films are made up of three layers which are Pt layer, anatase-TiO2 layer and Cu2O layer from bottom to top. The surface of the films is even and composed of regular-shaped spherical particles. The photocatalytic activity of the Cu2O/TiO2/Pt three-layer film is much higher than that of the Cu2O/TiO2 double-layer film. Such enhancement is ascribed to the presence of Pt layer, which further inhibits the photogenerated electron-hole recombination, prolongs the lifetime of the photogenerated carriers, increases the quantum efficiency and hence improves the photocatalytic activity of the film effectively.展开更多
The present work describes the effect of deposition potentials on structural,morphological,optical,electrical and photoconductivity responses of cuprous oxide(Cu2O)thin films deposited on fluorine-doped tin oxide glas...The present work describes the effect of deposition potentials on structural,morphological,optical,electrical and photoconductivity responses of cuprous oxide(Cu2O)thin films deposited on fluorine-doped tin oxide glass substrate by employing electrodeposition technique.X-ray diffraction patterns reveal that the deposited films have a cubic structure grown along the preferential(111)growth orientation and crystallinity of the film deposited at.0.4 V is improved compared to the films deposited at.0.2,.0.3 and.0.5 V.Scanning electron microscopy displays that surface morphology of Cu2O film has a well-defined three-sided pyramid-shaped grains which are uniformly distributed over the surface of the substrates and are significantly changed as a function of deposition potential.Raman and photoluminescence spectra manifest that the film deposited at.0.4 V has a good crystal quality with higher acceptor concentration compared to other films.UV–visible analysis illustrates that the absorption of Cu2O thin film deposited at.0.4 V is notably higher compared to other films and the band gap of Cu2O thin films decreases from 2.1 to 2.04 eV with an increase in deposition potential from.0.2 to.0.5 V.The frequency–temperature dependence of impedance analysis shows that the film deposited at.0.4 V has a high conductivity.I– V measurements elucidate that the film deposited at.0.4 V exhibits a good photoconductivity response compared to films deposited in other deposition potentials.展开更多
Two-inch Ga_2O_3 films with（ˉ201）-orientation are grown on c-sapphire at 850–1050°C by hydride vapor phase epitaxy. High-resolution x-ray diffraction shows that pure β-Ga_2O_3 with a smooth surface has a hig...Two-inch Ga_2O_3 films with（ˉ201）-orientation are grown on c-sapphire at 850–1050°C by hydride vapor phase epitaxy. High-resolution x-ray diffraction shows that pure β-Ga_2O_3 with a smooth surface has a higher crystal quality, and the Raman spectra reveal a very small residual strain in β-Ga_2O_3 grown by hydride vapor phase epitaxy compared with bulk single crystal. The optical transmittance is higher than 80% in the visible and near-UV regions, and the optical bandgap energy is calculated to be 4.9 e V.展开更多
Gold nanoparticles dispersed Y2O3 films were prepared through a sol-gel method by using yttrium acetate and Au nanoparticles colloid as precursors. The films were characterized by X-ray diffraction （XRD）, transmissi...Gold nanoparticles dispersed Y2O3 films were prepared through a sol-gel method by using yttrium acetate and Au nanoparticles colloid as precursors. The films were characterized by X-ray diffraction （XRD）, transmission electron microscopy （TEM） and UV-VIS absorption spectra. XRD patterns and TEM images of Y2O3 ＋ Au films give the same resuits on structure and particle size as that of pure Y2O3 films. The surface plasma resonance （SPR） of Au nanoparticles in Y2O3 ＋ Au film was observed around 550 nm in the absorption spectrum and its position shifts to red with increasing annealing temperature is caused by the increase of dielectric constant of Y2O3 matrix and the size of Au nanoparticles. The second and third order nonlinear optical effects of Y2O3 ＋ Au films were also observed. The photoluminescent properties of Y2O3 ： Eu ＋ Au films were investigated and results indicate that there exist an energy transfer from Eu^3 ＋ to Au nanoparticles and this energy transfer decreases the emission of Eu^3 ＋ in Y2O3 ： Eu ＋ Au film.展开更多
Fe2O3/SiO2 nano-composite films were prepared by sol-gel technique combining heat treatment in the range of 100-900 ℃. The particle size was observed by FE-SEM. Optical properties of the films were investigated by UV...Fe2O3/SiO2 nano-composite films were prepared by sol-gel technique combining heat treatment in the range of 100-900 ℃. The particle size was observed by FE-SEM. Optical properties of the films were investigated by UV-visible spectra. Structural and magnetic characteristics were investigated through FT-IR and VSM. The transparency of the Fe2O3/SiO2 nano-composite films decreased with the content of the Fe2O3. Water and organic solvent in the films were evaporated with heat treatment, so the transparency of the films was enhanced under high temperature. It is also found that the saturation magnetization （Ms） of the films increases with the temperature. As the content of the Fe2O3 increases, when the content of the Fe2O3 is around 30wt%, the Ms of the films has a maximum value.展开更多
The LiMn2O4 thin film as a cathode material was prepared through solution deposition followed by rapid thermal annealing （RTA）. The phase identification and the study of surface morphology were carried out by X-my d...The LiMn2O4 thin film as a cathode material was prepared through solution deposition followed by rapid thermal annealing （RTA）. The phase identification and the study of surface morphology were carried out by X-my diffraction and scanning electron microscopy. Electrochemical properties were examined by cyclic voltammetry, galvanostatic charge-discharge experiments, and electrochemical impedance spectroscopy. The results show that the film prepared by this method is homogeneous, dense, and crack-free. The thin film has a capacity of 38 μtAh/（cm^2·μm） with the capacity loss of 0.037% per cycle after being cycled for 100 times. The average diffusion coefficient for lithium ions in the RTA-derived LiMn2O4 thin film is 1×10 ^-10 cm^2·s^-1.展开更多
The humidity sensing properties of La^3＋ and K^＋ co-doped Ti0.9Sn0.1O2 thin films were investigated. The humidity sensitive thin films were prepared by sol-gel method on alumina substrates. The sensing behaviors of ...The humidity sensing properties of La^3＋ and K^＋ co-doped Ti0.9Sn0.1O2 thin films were investigated. The humidity sensitive thin films were prepared by sol-gel method on alumina substrates. The sensing behaviors of thin films were inspected at different sintering temperatures by constructing a humidity-impedance measuring system. It was found that the addition of rare earth ion La^3＋ and alkali ion K^＋ was beneficial for improving the humidity sensitive properties of the samples and La0.003K0.5Ti0.9Sn0.1O2 sintered at 500 ℃ for 4 h showed the best humidity sensing properties. The impedance of this thin film decreased from 109 to 104 Ω with excellent linearity in the humidity range of 11%-95%. Narrow hysteresis loop, prominent stability and high sensitivity were obtained. The effects of dopant con-tent and doping mechanism on humidity sensitivity were also discussed in terms of segregation of rare earth ions at grain boundaries and granularity of crystalline and influence of K^＋ on the decrease in the intrinsic resistance of the materials, and increase in the number of wa-ter adsorption sites.展开更多
Polymer-assisted deposition technique has been used to deposit Al2O3 and N-doped Al2O3 （AION） thin films on Si（100） substrates. The chemical compositions, crystallinity, and thermal conductivity of the as-grown fi...Polymer-assisted deposition technique has been used to deposit Al2O3 and N-doped Al2O3 （AION） thin films on Si（100） substrates. The chemical compositions, crystallinity, and thermal conductivity of the as-grown films have been characterized by X-ray photoelectron spectroscopy （XPS）, X-ray diffraction （XRD）, and 3-omega method, respectively. Amorphous and polycrystalline Al2O3 and AlON thin films have been formed at 700 ℃ and 1000 ℃. The thermal conductivity results indicated that the effect of nitrogen doping on the thermal conductivity is determined by the competition of the increase of Al-N bonding and the suppression of crystallinity. A 67% enhancement in thermal conductivity has been achieved for the samples grown at 700 ℃, demonstrating that the nitrogen doping is an effective way to improve the thermal performance of polymer-assisted-deposited Al2O3 thin films at a relatively low growth temperature.展开更多
Flexible electronic devices have attracted much attention due to their practical and commercial value. Integration of thin films with soft substrate is an effective way to fabricate flexible electronic devices. Ga_2O_...Flexible electronic devices have attracted much attention due to their practical and commercial value. Integration of thin films with soft substrate is an effective way to fabricate flexible electronic devices. Ga_2O_3 thin films deposited directly on soft substrates would be amorphous mostly. However, the thickness of the thin film obtained by mechanical exfoliation method is difficult to control and the edge of the film is fragile and easy to be damaged. In this work, we fabricated free-standing Ga_2O_3 thin films using the water-soluble perovskite Sr_3Al_2O_6 as a sacrificial buffer layer. The obtained Ga_2O_3 thin films were polycrystalline. The thickness and dimension of the films were controllable. A flexible Ga_2O_3solar-blind UV photodetector was fabricated by transferring the free-standing Ga_2O_3 film on a flexible polyethylene terephthalate substrate. The results displayed that the photoelectric performances of the flexible Ga_2O_3 photodetector were not sensitive to bending of the device. The free-standing Ga_2O_3 thin films synthesized through the method described here can be transferred to any substrates or integrated with other thin films to fabricate electronic devices.展开更多
We improved the photovoltaic properties of Cu_2O-based heterojunction solar cells using n-type oxide semiconductor thin films prepared by a sputtering apparatus with our newly developed multi-chamber system. We also o...We improved the photovoltaic properties of Cu_2O-based heterojunction solar cells using n-type oxide semiconductor thin films prepared by a sputtering apparatus with our newly developed multi-chamber system. We also obtained the highest efficiency(3.21%) in an AZO/p-Cu_2O heterojunction solar cell prepared with optimized pre-sputtering conditions using our newly developed multi-chamber sputtering system. This value achieves the same or higher characteristics than AZO/Cu_2O solar cells with a similar structure prepared by the pulse laser deposition method.展开更多
Cuprous oxide(Cu2O)is an attractive material for photoelectrochemical(PEC)hydrogen production or photovoltaic application,because of its appropriate band gap,low material cost and non-toxic.In this paper,Cu2O films we...Cuprous oxide(Cu2O)is an attractive material for photoelectrochemical(PEC)hydrogen production or photovoltaic application,because of its appropriate band gap,low material cost and non-toxic.In this paper,Cu2O films were obtained by comproportionation in acid cupric sulfate solutions with varying concentrations of potassium nitrate.Photoelectrochemical and electrochemical experiments,such as zero-bias photocurrent responses,voltammograms,and Mott-Schottky measurements,show that the Cu2O films grown in low(≤0.75 mol dm^–3)and high(≥1.00 mol dm^–3)nitrate ion concentrations presented n-type and p-type conductivity,respectively.Open circuit potential and polarization behavior were monitored to investigate the mechanism of modulating conductivity type.Nitrate ions consume protons in the plating solution during comproportionation with different concentrations of nitrate ions creating different pH at the Cu2O/solution interface.This gradient leads to the transformation of Cu2Ofilms conductivity changing from n-type to p-type with increasing the concentration of nitrate ions in the plating solution.This method could be used to fabricate homojunction electrode on metal substrate for PEC hydrogen production or photoelectric application.展开更多
We report the thickness dependence of critical current density （Jc） in YBa2Cu3O7-x （YBCO） films with BaZrO3 （BZO） and Y2O3 additions grown on single crystal LaAlO3 substrates by metalorganic deposition using tri...We report the thickness dependence of critical current density （Jc） in YBa2Cu3O7-x （YBCO） films with BaZrO3 （BZO） and Y2O3 additions grown on single crystal LaAlO3 substrates by metalorganic deposition using trifluoroacetates （TFA-MOD）. Comparing with pttre YBCO films, the Jc of BZO/Y2O3-doped YBCO films was significantly enhanced. It was also found that with the increase of the thickness of YBCO film from 0.25 μm to 1.5 μm, the Ic of BZO/Y2O3-doped YBCO film increased from 130 A/cm to 250 A/cm and yet Jc of YBCO film decreased from 6.5 MA/cm2 to 2.5 M A/cm2. The thick BZO/Y2O3-doped MOD-YBCO film showed lower Jc, which is mainly attributed to the formation of a-axis grains and pores.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant No.51272250)the National Basic Research Program of China(Grant No.2011CBA00105)+1 种基金the National High Technology Research and Development Program of China(Grant No.2014AA032702)the Natural Science Foundation of Beijing,China(Grant No.2152035)
文摘YBa2Cu3O7-x（YBCO） films with co-doping BaTiO3（BTO） and Y2O3 nanostructures were prepared by metal organic deposition using trifluoroacetates（TFA-MOD）. The properties of the BTO/Y2O3co-doped YBCO films with different excess yttrium have been systematically studied by x-ray diffraction（XRD）, Raman spectra, and scanning electron microscope（SEM）. The optimized content of yttrium excess in the BTO/Y2O3co-doped YBCO films is 10 mol.%, and the critical current density is as high as - 17 mA/cm^2（self-field, 65 K） by the magnetic signal. In addition, the Y2Cu2O5 was formed when the content of yttrium excess increases to 24 mol.%, which may result in the deterioration of the superconducting properties and the microstructure. The unique combination of the different types of nanostructures of BTO and Y2O3 in the doped YBCO films, compared with the pure YBCO films and BTO doped YBCO films, enhances the critical current density（JC） not only at the self-magnetic field, but also in the applied magnetic field.
基金supported by the grants from the Nature Science Foundation of Zhejiang Province (Y406309)Research Program from Science and Technology Bureau of Jinhua City (2008-1-151)
文摘Y2O3：Er^3＋ films were prepared by a simple sol-gel process. The structural properties of Y2O3：Er^3＋ films were characterized with X-ray diffraction, Fourier transform infrared spectroscopy and field emission scanning electron microscopy. The results indicated that the Y2O3：Er^3＋ films might have high upconversion efficiency because of their low vibrational energy. Under 785 and 980 nm laser excitation, the samples showed green （^2H11/2→^4I15/2, ^4S3/2→^4I15/2） and red （^4F9/2→^4I15/2） upconversion emissions. The upconversion mechanisms were studied in detail through laser power dependence. Excited state absorption and energy transfer process were discussed as possible upconversion mechanisms. The cross relaxation process in Er^3＋ was also investigated.
基金financially supported by the scientific research project of China Petroleum and Chemical Corporation(No.409075)
文摘The oxidation kinetics,surface morphology and phase structure of oxide films grown on 25Cr20Ni alloy in air-H2O and H2-H2O atmospheres at 900 ℃ for 20 h were investigated.The anti-coking performance and resistance to carburization of the two oxide films were compared using 25Cr20Ni alloy tubes with an inner diameter of 10 mm and a length of 850 mm in a bench scale naphtha steam pyrolysis unit.The oxidation kinetics followed a parabolic law in an air-H2O atmosphere and a logarithm law in a H2-H2O atmosphere in the steady-state stage.The oxide film grown in the air-H2O atmosphere had cracks where the elements Fe and Ni were enriched and the un-cracked area was covered with octahedral-shaped MnCr2O4 spinels and Cr1.3Fe0.7O3 oxide clusters,while the oxide film grown in the H2-H2O atmosphere was intact and completely covered with dense standing blade MnCr2O4 spinels.In the pyrolysis tests,the anti-coking performance and resistance to carburization of the oxide film grown in the H2-H2O atmosphere were far better than that in the air-H2O atmosphere.The mass of coke formed in the oxide film grown in the H2-H2O atmosphere was less than 10％ of that in the air-H2O atmosphere.The Cr1.3Fe0.7O3 oxide clusters converted into Cr23C6 carbides and the cracks were filled with carbon in the oxide film grown in the air-H2O atmosphere after repeated coking and decoking tests,while the dense standing blade MnCr2O4 spinels remained unchanged in the oxide film grown in the H2-H2O atmosphere.The ethylene,propylene and butadiene yields in the pyrolysis tests were almost the same for the two oxide films.
基金financially supported by the National Natural Science Foundation of China (No. 50902006)the National High Technology Development 863 Program of China (No. 2009AA03Z428)National Student Innovative Experiment Plan
文摘The In 2 O 3 : W (IWO) films with different W content were deposited on glass substrate using direct current sputtering method. The structure, surface morphology, and optical and electrical properties were investigated. Results showed that both the carrier concentration and carrier mobility were increased with the doping of W. The IWO film with the lowest resistivity of 1.0×10 3 cm, highest carrier mobilityof 43.7 cm 2 V 1 s 1 and carrier concentration of 1.4×10 20 cm 3 was obtained at the content of 2.8 wt.%. The average optical transmittance from 300 nm to 900 nm reached 87.6%.
基金financially supported by the National Natural Science Foundation of China (No.51301118)the Projects of International Cooperation in Shanxi (No.2014081002)the Scientific and Technological Innovation Programs of Higher Education Institutions in Shanxi (No.2013108)
文摘Cu2O/TiOa/Pt three-layer films were deposited on glass substrates using magnetron sputtering method. The surface morphology and the optical properties of the composite film were characterized by X-ray diffraction （XRD）, scanning electron microscopy （SEM）, ultraviolet- visible spectroscopy （UV-Vis） and photoluminescence spectroscopy （PL）. The photocatalytic activity of the samples was evaluated by the photocatalytic degradation of methyl orange （MO） aqueous solution under visible light irradiation. The results indicate that the Cu2O/TiO2/Pt composite films are made up of three layers which are Pt layer, anatase-TiO2 layer and Cu2O layer from bottom to top. The surface of the films is even and composed of regular-shaped spherical particles. The photocatalytic activity of the Cu2O/TiO2/Pt three-layer film is much higher than that of the Cu2O/TiO2 double-layer film. Such enhancement is ascribed to the presence of Pt layer, which further inhibits the photogenerated electron-hole recombination, prolongs the lifetime of the photogenerated carriers, increases the quantum efficiency and hence improves the photocatalytic activity of the film effectively.
基金the funding and support from the RUSA-Phase 2.0 grant sanctioned vide Letter. No. F. 24-51/2014-U, Policy (TNMulti-Gen), Dept. of Edn. Govt. of India. Dt. 09.10.2018.
文摘The present work describes the effect of deposition potentials on structural,morphological,optical,electrical and photoconductivity responses of cuprous oxide(Cu2O)thin films deposited on fluorine-doped tin oxide glass substrate by employing electrodeposition technique.X-ray diffraction patterns reveal that the deposited films have a cubic structure grown along the preferential(111)growth orientation and crystallinity of the film deposited at.0.4 V is improved compared to the films deposited at.0.2,.0.3 and.0.5 V.Scanning electron microscopy displays that surface morphology of Cu2O film has a well-defined three-sided pyramid-shaped grains which are uniformly distributed over the surface of the substrates and are significantly changed as a function of deposition potential.Raman and photoluminescence spectra manifest that the film deposited at.0.4 V has a good crystal quality with higher acceptor concentration compared to other films.UV–visible analysis illustrates that the absorption of Cu2O thin film deposited at.0.4 V is notably higher compared to other films and the band gap of Cu2O thin films decreases from 2.1 to 2.04 eV with an increase in deposition potential from.0.2 to.0.5 V.The frequency–temperature dependence of impedance analysis shows that the film deposited at.0.4 V has a high conductivity.I– V measurements elucidate that the film deposited at.0.4 V exhibits a good photoconductivity response compared to films deposited in other deposition potentials.
基金Supported by the National Key Research and Development Program of China under Grant No 2017YFB0404201the Solid State Lighting and Energy-Saving Electronics Collaborative Innovation Center,PAPDthe State Grid Shandong Electric Power Company
文摘Two-inch Ga_2O_3 films with（ˉ201）-orientation are grown on c-sapphire at 850–1050°C by hydride vapor phase epitaxy. High-resolution x-ray diffraction shows that pure β-Ga_2O_3 with a smooth surface has a higher crystal quality, and the Raman spectra reveal a very small residual strain in β-Ga_2O_3 grown by hydride vapor phase epitaxy compared with bulk single crystal. The optical transmittance is higher than 80% in the visible and near-UV regions, and the optical bandgap energy is calculated to be 4.9 e V.
文摘Gold nanoparticles dispersed Y2O3 films were prepared through a sol-gel method by using yttrium acetate and Au nanoparticles colloid as precursors. The films were characterized by X-ray diffraction （XRD）, transmission electron microscopy （TEM） and UV-VIS absorption spectra. XRD patterns and TEM images of Y2O3 ＋ Au films give the same resuits on structure and particle size as that of pure Y2O3 films. The surface plasma resonance （SPR） of Au nanoparticles in Y2O3 ＋ Au film was observed around 550 nm in the absorption spectrum and its position shifts to red with increasing annealing temperature is caused by the increase of dielectric constant of Y2O3 matrix and the size of Au nanoparticles. The second and third order nonlinear optical effects of Y2O3 ＋ Au films were also observed. The photoluminescent properties of Y2O3 ： Eu ＋ Au films were investigated and results indicate that there exist an energy transfer from Eu^3 ＋ to Au nanoparticles and this energy transfer decreases the emission of Eu^3 ＋ in Y2O3 ： Eu ＋ Au film.
基金Funded by the Innovative Program of Shanghai Municipal Education Commission (No.08YZ97)the National Natural Science Foundation of China (No.10704048)
文摘Fe2O3/SiO2 nano-composite films were prepared by sol-gel technique combining heat treatment in the range of 100-900 ℃. The particle size was observed by FE-SEM. Optical properties of the films were investigated by UV-visible spectra. Structural and magnetic characteristics were investigated through FT-IR and VSM. The transparency of the Fe2O3/SiO2 nano-composite films decreased with the content of the Fe2O3. Water and organic solvent in the films were evaporated with heat treatment, so the transparency of the films was enhanced under high temperature. It is also found that the saturation magnetization （Ms） of the films increases with the temperature. As the content of the Fe2O3 increases, when the content of the Fe2O3 is around 30wt%, the Ms of the films has a maximum value.
基金This project was financially supported by the Natural Science Foundation of Hunan Province, China (No. 04JJ40038) and the Education Department of Hunan Province, China (No. 04C 475).
文摘The LiMn2O4 thin film as a cathode material was prepared through solution deposition followed by rapid thermal annealing （RTA）. The phase identification and the study of surface morphology were carried out by X-my diffraction and scanning electron microscopy. Electrochemical properties were examined by cyclic voltammetry, galvanostatic charge-discharge experiments, and electrochemical impedance spectroscopy. The results show that the film prepared by this method is homogeneous, dense, and crack-free. The thin film has a capacity of 38 μtAh/（cm^2·μm） with the capacity loss of 0.037% per cycle after being cycled for 100 times. The average diffusion coefficient for lithium ions in the RTA-derived LiMn2O4 thin film is 1×10 ^-10 cm^2·s^-1.
文摘The humidity sensing properties of La^3＋ and K^＋ co-doped Ti0.9Sn0.1O2 thin films were investigated. The humidity sensitive thin films were prepared by sol-gel method on alumina substrates. The sensing behaviors of thin films were inspected at different sintering temperatures by constructing a humidity-impedance measuring system. It was found that the addition of rare earth ion La^3＋ and alkali ion K^＋ was beneficial for improving the humidity sensitive properties of the samples and La0.003K0.5Ti0.9Sn0.1O2 sintered at 500 ℃ for 4 h showed the best humidity sensing properties. The impedance of this thin film decreased from 109 to 104 Ω with excellent linearity in the humidity range of 11%-95%. Narrow hysteresis loop, prominent stability and high sensitivity were obtained. The effects of dopant con-tent and doping mechanism on humidity sensitivity were also discussed in terms of segregation of rare earth ions at grain boundaries and granularity of crystalline and influence of K^＋ on the decrease in the intrinsic resistance of the materials, and increase in the number of wa-ter adsorption sites.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.60976061 and 11028409)
文摘Polymer-assisted deposition technique has been used to deposit Al2O3 and N-doped Al2O3 （AION） thin films on Si（100） substrates. The chemical compositions, crystallinity, and thermal conductivity of the as-grown films have been characterized by X-ray photoelectron spectroscopy （XPS）, X-ray diffraction （XRD）, and 3-omega method, respectively. Amorphous and polycrystalline Al2O3 and AlON thin films have been formed at 700 ℃ and 1000 ℃. The thermal conductivity results indicated that the effect of nitrogen doping on the thermal conductivity is determined by the competition of the increase of Al-N bonding and the suppression of crystallinity. A 67% enhancement in thermal conductivity has been achieved for the samples grown at 700 ℃, demonstrating that the nitrogen doping is an effective way to improve the thermal performance of polymer-assisted-deposited Al2O3 thin films at a relatively low growth temperature.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.51572033,51572241,61774019,61704153,and 11404029)the Fund of State Key Laboratory of IPOC(BUPT)+1 种基金the Open Fund of IPOC(BUPT)Beijing Municipal Commission of Science and Technology,China(Grant No.SX2018-04)
文摘Flexible electronic devices have attracted much attention due to their practical and commercial value. Integration of thin films with soft substrate is an effective way to fabricate flexible electronic devices. Ga_2O_3 thin films deposited directly on soft substrates would be amorphous mostly. However, the thickness of the thin film obtained by mechanical exfoliation method is difficult to control and the edge of the film is fragile and easy to be damaged. In this work, we fabricated free-standing Ga_2O_3 thin films using the water-soluble perovskite Sr_3Al_2O_6 as a sacrificial buffer layer. The obtained Ga_2O_3 thin films were polycrystalline. The thickness and dimension of the films were controllable. A flexible Ga_2O_3solar-blind UV photodetector was fabricated by transferring the free-standing Ga_2O_3 film on a flexible polyethylene terephthalate substrate. The results displayed that the photoelectric performances of the flexible Ga_2O_3 photodetector were not sensitive to bending of the device. The free-standing Ga_2O_3 thin films synthesized through the method described here can be transferred to any substrates or integrated with other thin films to fabricate electronic devices.
基金partly supported by Grant-in-Aid for Scientific Research on Innovative Areas from the Ministry of Education, Culture, Sports, Science and Technology of Japan (No.15K04723)
文摘We improved the photovoltaic properties of Cu_2O-based heterojunction solar cells using n-type oxide semiconductor thin films prepared by a sputtering apparatus with our newly developed multi-chamber system. We also obtained the highest efficiency(3.21%) in an AZO/p-Cu_2O heterojunction solar cell prepared with optimized pre-sputtering conditions using our newly developed multi-chamber sputtering system. This value achieves the same or higher characteristics than AZO/Cu_2O solar cells with a similar structure prepared by the pulse laser deposition method.
基金financially supported by the National Natural Science Foundation of China (No. 51302216 and 21375102)the Excellent Young Academic Backbone Program of the Northwest University+1 种基金the Open Fund of the State Key Laboratory of Multiphase Flow in Power Engineering of Chinathe Scientific Research Program funded by Shaanxi Provincial Education Department (No. 17JS121)
文摘Cuprous oxide(Cu2O)is an attractive material for photoelectrochemical(PEC)hydrogen production or photovoltaic application,because of its appropriate band gap,low material cost and non-toxic.In this paper,Cu2O films were obtained by comproportionation in acid cupric sulfate solutions with varying concentrations of potassium nitrate.Photoelectrochemical and electrochemical experiments,such as zero-bias photocurrent responses,voltammograms,and Mott-Schottky measurements,show that the Cu2O films grown in low(≤0.75 mol dm^–3)and high(≥1.00 mol dm^–3)nitrate ion concentrations presented n-type and p-type conductivity,respectively.Open circuit potential and polarization behavior were monitored to investigate the mechanism of modulating conductivity type.Nitrate ions consume protons in the plating solution during comproportionation with different concentrations of nitrate ions creating different pH at the Cu2O/solution interface.This gradient leads to the transformation of Cu2Ofilms conductivity changing from n-type to p-type with increasing the concentration of nitrate ions in the plating solution.This method could be used to fabricate homojunction electrode on metal substrate for PEC hydrogen production or photoelectric application.
基金supported by the National Natural Science Foundation of China(Grant No.51272250)the National Basic Research Program of China(Grant No.2011CBA00105)+1 种基金the National High Technology Research and Development Program of China(Grant No.2014AA032702)the Beijing Natural Science Foundation,China(Grant No.2152035)
文摘We report the thickness dependence of critical current density （Jc） in YBa2Cu3O7-x （YBCO） films with BaZrO3 （BZO） and Y2O3 additions grown on single crystal LaAlO3 substrates by metalorganic deposition using trifluoroacetates （TFA-MOD）. Comparing with pttre YBCO films, the Jc of BZO/Y2O3-doped YBCO films was significantly enhanced. It was also found that with the increase of the thickness of YBCO film from 0.25 μm to 1.5 μm, the Ic of BZO/Y2O3-doped YBCO film increased from 130 A/cm to 250 A/cm and yet Jc of YBCO film decreased from 6.5 MA/cm2 to 2.5 M A/cm2. The thick BZO/Y2O3-doped MOD-YBCO film showed lower Jc, which is mainly attributed to the formation of a-axis grains and pores.
