As circuit feature sizes approach the nanoscale,traditional Copper(Cu)interconnects face significant hurdles posed by rising resistance-capacitance(RC)delay,electromigration,and high power dissipation.These limitation...As circuit feature sizes approach the nanoscale,traditional Copper(Cu)interconnects face significant hurdles posed by rising resistance-capacitance(RC)delay,electromigration,and high power dissipation.These limitations impose constraints on the scalability and reliability of future semiconductor technologies.Our paper describes the new Vertical multilayer Aluminium Boron Nitride Nanoribbon(AlBN)interconnect structure,integrated with Density functional theory(DFT)using first-principles calculations.This study explores AlBN-based nanostructures with doping of 1Cu,2Cu,1Fe(Iron),and 2Fe for the application of Very Large Scale Integration(VLSI)interconnects.The AlBN structure utilized the advantages of vertical multilayer interconnects to both reduce the RC delay while enhancing signal integrity.Key parameters like Fermi energy,bandgap,binding energy,conduction channels,quantum resistance,and RC delay were analyzed.Through modeling and large-scale simulation,the structural,electronic,and stability attributes of the AlBN interconnects are analyzed,and the results illustrate considerable improvements in signal propagation against Cu interconnect structures.These findings confirm the tunable,high-performance nature of AlBN-2Fe,making it a promising candidate for future high-speed,low-power VLSI interconnect technologies.We demonstrated an advanced energy-efficient interconnect that can be easily scaled for future nanoscale VLSI circuit design and gives rise to a next generation of viable interconnect technology for high-capacity,high-speed,reliable semiconductor technology.展开更多
Fast statistical methods of interconnect delay and slew in the presence of process fluctuations are proposed. Using an optimized quadratic model to describe the effects of process variations, the proposed method enabl...Fast statistical methods of interconnect delay and slew in the presence of process fluctuations are proposed. Using an optimized quadratic model to describe the effects of process variations, the proposed method enables closedform expressions of interconnect delay and slew for the given variations in relevant process parameters. Simulation results show that the method, which has a statistical characteristic similar to traditional methodology, is more efficient compared to HSPICE-based Monte Carlo simulations and traditional methodology.展开更多
Ferroelectric hysteresis loop measurement under high driving frequency generally faces great challenges.Parasitic factors in testing circuits such as leakage current and RC delay could result in abnormal hysteresis lo...Ferroelectric hysteresis loop measurement under high driving frequency generally faces great challenges.Parasitic factors in testing circuits such as leakage current and RC delay could result in abnormal hysteresis loops with erroneous rem-nant polarization(P_(r))and coercive field(E_(c)).In this study,positive-up-negative-down(PUND)measurement under a wide fre-quency range was performed on a 10-nm thick Hf_(0.5)Zr_(0.5)O_(2) ferroelectric film.Detailed analysis on the leakage current and RC delay was conducted as the polarization switching occurs in the FE capacitor.After considering the time lag caused by RC delay,reasonable calibration of current response over the voltage pulse stimulus was employed in the integral of polarization current over time.In such a method,rational P-V loops measured at high frequencies(>1 MHz)was successfully achieved.This work provides a comprehensive understanding on the effect of parasitic factors on the polarization switching behavior of FE films.展开更多
Zirconia(ZrO_(2))-based fluorite dioxide ferroelectric materials have shown great potential for nonvolatile storage logic devices.Compared to hafnium dioxide(HfO_(2)),ZrO_(2) offers a lower material cost and possesses...Zirconia(ZrO_(2))-based fluorite dioxide ferroelectric materials have shown great potential for nonvolatile storage logic devices.Compared to hafnium dioxide(HfO_(2)),ZrO_(2) offers a lower material cost and possesses more abundant natural reserves.In this study,we prepared ferroelectric ZrO_(2) thin films on niobium-doped strontium titanate(NSTO)substrates with different crystallographic orientations by chemical solution deposition(CSD)and systematically analyzed their structural and ferroelectric properties.Through a combination of simulation and experimentation,we discovered that the ferroelectric orthorhombic-phase(o-phase)of ZrO_(2) films on NSTO substrates with specific orientations appears to be selectively crystallized.Among them,the ZrO_(2) film on NSTO(110)substrate has the highest content of ferroelectric o-phase with a high remanent polarization value(2Pr=92.64μC/cm^(2)).Notably,even after resistive-capacitive(RC)delay calibration,the 2Pr value remained at a high level of up to 88.54μC/cm^(2).The device demonstrates an approximate durability of 10_(7) cycles,exhibiting favourable fatigue characteristics.We present a novel approach to ferroelectric phase modulation by utilizing the substrate orientation to control the in-plane tensile strain,which promotes the epitaxial growth of the ferroelectric o-phase.Additionally,X-ray absorption spectroscopy(XAS)analysis reveals the distortion of Zr-O tetrahedra,providing a microscopic perspective for understanding the ferroelectricity of ZrO_(2) films.The findings of this study not only provide a novel strategy for the property tuning of ZrO_(2) films,but also provide a reliable support for the application of ZrO_(2)-based ferroelectric materials in storage and logic devices.展开更多
By utilizing the first order behavior of the device,an equation for the frequency of operation of the submicron CMOS ring oscillator is presented.A 5-stage ring oscillator is utilized as the initial design,with differ...By utilizing the first order behavior of the device,an equation for the frequency of operation of the submicron CMOS ring oscillator is presented.A 5-stage ring oscillator is utilized as the initial design,with different Beta ratios,for the computation of the operating frequency.Later on,the circuit simulation is performed from 5-stage till 23-stage,with the range of oscillating frequency being 3.0817 and 0.6705 GHz respectively.It is noted that the output frequency is inversely proportional to the square of the device length,and when the value of Beta ratio is used as 2.3,a difference of 3.64%is observed on an average,in between the computed and the simulated values of frequency.As an outcome,the derived equation can be utilized,with the inclusion of an empirical constant in general,for arriving at the ring oscillator circuit’s output frequency.展开更多
文摘As circuit feature sizes approach the nanoscale,traditional Copper(Cu)interconnects face significant hurdles posed by rising resistance-capacitance(RC)delay,electromigration,and high power dissipation.These limitations impose constraints on the scalability and reliability of future semiconductor technologies.Our paper describes the new Vertical multilayer Aluminium Boron Nitride Nanoribbon(AlBN)interconnect structure,integrated with Density functional theory(DFT)using first-principles calculations.This study explores AlBN-based nanostructures with doping of 1Cu,2Cu,1Fe(Iron),and 2Fe for the application of Very Large Scale Integration(VLSI)interconnects.The AlBN structure utilized the advantages of vertical multilayer interconnects to both reduce the RC delay while enhancing signal integrity.Key parameters like Fermi energy,bandgap,binding energy,conduction channels,quantum resistance,and RC delay were analyzed.Through modeling and large-scale simulation,the structural,electronic,and stability attributes of the AlBN interconnects are analyzed,and the results illustrate considerable improvements in signal propagation against Cu interconnect structures.These findings confirm the tunable,high-performance nature of AlBN-2Fe,making it a promising candidate for future high-speed,low-power VLSI interconnect technologies.We demonstrated an advanced energy-efficient interconnect that can be easily scaled for future nanoscale VLSI circuit design and gives rise to a next generation of viable interconnect technology for high-capacity,high-speed,reliable semiconductor technology.
文摘Fast statistical methods of interconnect delay and slew in the presence of process fluctuations are proposed. Using an optimized quadratic model to describe the effects of process variations, the proposed method enables closedform expressions of interconnect delay and slew for the given variations in relevant process parameters. Simulation results show that the method, which has a statistical characteristic similar to traditional methodology, is more efficient compared to HSPICE-based Monte Carlo simulations and traditional methodology.
基金supported by the Ministry of Science and Technology(MOST)of China under Grant 2016YFA0203800in part by the National Natural Science Foundation of China under Grants 61834009,62025406,92064003,61821091the Strategic Priority Research Program of the Chinese Academy of Sciences under Grant XDB44010300。
文摘Ferroelectric hysteresis loop measurement under high driving frequency generally faces great challenges.Parasitic factors in testing circuits such as leakage current and RC delay could result in abnormal hysteresis loops with erroneous rem-nant polarization(P_(r))and coercive field(E_(c)).In this study,positive-up-negative-down(PUND)measurement under a wide fre-quency range was performed on a 10-nm thick Hf_(0.5)Zr_(0.5)O_(2) ferroelectric film.Detailed analysis on the leakage current and RC delay was conducted as the polarization switching occurs in the FE capacitor.After considering the time lag caused by RC delay,reasonable calibration of current response over the voltage pulse stimulus was employed in the integral of polarization current over time.In such a method,rational P-V loops measured at high frequencies(>1 MHz)was successfully achieved.This work provides a comprehensive understanding on the effect of parasitic factors on the polarization switching behavior of FE films.
基金supported by the National Key Research and Development Program of China(2025YFA1411900 and 2021YFF0704705)the National Natural Science Foundation of China(22371013 and 92263205)+6 种基金the Fundamental Research Funds for the Central Universities(FRF-IDRY-19-007 and FRF-TP-19-055A2Z)the National Program for Support of Top-notch Young Professionalsthe Young Elite Scientists Sponsorship Program by China Association for Science and Technology(CAST)(2019-2021QNRC)the"Xiaomi Young Scholar"Funding ProjectScientific Equipment Development Project of Chinese Academy of SciencesYouth Innovation Promotion Association Project of Chinese Academy of Sciences(2020026)the Technical Support Talent Project of Chinese Academy of Sciences。
文摘Zirconia(ZrO_(2))-based fluorite dioxide ferroelectric materials have shown great potential for nonvolatile storage logic devices.Compared to hafnium dioxide(HfO_(2)),ZrO_(2) offers a lower material cost and possesses more abundant natural reserves.In this study,we prepared ferroelectric ZrO_(2) thin films on niobium-doped strontium titanate(NSTO)substrates with different crystallographic orientations by chemical solution deposition(CSD)and systematically analyzed their structural and ferroelectric properties.Through a combination of simulation and experimentation,we discovered that the ferroelectric orthorhombic-phase(o-phase)of ZrO_(2) films on NSTO substrates with specific orientations appears to be selectively crystallized.Among them,the ZrO_(2) film on NSTO(110)substrate has the highest content of ferroelectric o-phase with a high remanent polarization value(2Pr=92.64μC/cm^(2)).Notably,even after resistive-capacitive(RC)delay calibration,the 2Pr value remained at a high level of up to 88.54μC/cm^(2).The device demonstrates an approximate durability of 10_(7) cycles,exhibiting favourable fatigue characteristics.We present a novel approach to ferroelectric phase modulation by utilizing the substrate orientation to control the in-plane tensile strain,which promotes the epitaxial growth of the ferroelectric o-phase.Additionally,X-ray absorption spectroscopy(XAS)analysis reveals the distortion of Zr-O tetrahedra,providing a microscopic perspective for understanding the ferroelectricity of ZrO_(2) films.The findings of this study not only provide a novel strategy for the property tuning of ZrO_(2) films,but also provide a reliable support for the application of ZrO_(2)-based ferroelectric materials in storage and logic devices.
文摘By utilizing the first order behavior of the device,an equation for the frequency of operation of the submicron CMOS ring oscillator is presented.A 5-stage ring oscillator is utilized as the initial design,with different Beta ratios,for the computation of the operating frequency.Later on,the circuit simulation is performed from 5-stage till 23-stage,with the range of oscillating frequency being 3.0817 and 0.6705 GHz respectively.It is noted that the output frequency is inversely proportional to the square of the device length,and when the value of Beta ratio is used as 2.3,a difference of 3.64%is observed on an average,in between the computed and the simulated values of frequency.As an outcome,the derived equation can be utilized,with the inclusion of an empirical constant in general,for arriving at the ring oscillator circuit’s output frequency.
