The design strategy and efficiency optimization of a Ge-based n-type metal-oxide-semiconductor field-effect transistor(n-MOSFET)with a Si_(0.14)Ge_(0.72)Sn_(0.14)-Ge_(0.82)Sn_(0.18)-Ge quantum structure used for 2.45 ...The design strategy and efficiency optimization of a Ge-based n-type metal-oxide-semiconductor field-effect transistor(n-MOSFET)with a Si_(0.14)Ge_(0.72)Sn_(0.14)-Ge_(0.82)Sn_(0.18)-Ge quantum structure used for 2.45 GHz weak energy microwave wireless energy transmission is reported.The quantum structure combined withδ-doping technology is used to reduce the scattering of the device and improve its electron mobility;at the same time,the generation of surface channels is suppressed by the Si_(0.14)Ge_(0.72)Sn_(0.14) cap layer.By adjusting the threshold voltage of the device to 91 mV,setting the device aspect ratio to 1μm/0.4μm and adopting a novel diode connection method,the rectification efficiency of the device is improved.With simulation by Silvaco TCAD software,good performance is displayed in the transfer and output characteristics.For a simple half-wave rectifier circuit with a load of 1 pf and 20 kΩ,the rectification efficiency of the device can reach 7.14%at an input power of-10 dBm,which is 4.2 times that of a Si MOSFET(with a threshold voltage of 80 mV)under the same conditions;this device shows a better rectification effect than a Si MOSFET in the range of-30 dBm to 6.9 dBm.展开更多
Ballistic thermal transport properties in a cylindrical quantum structure modulated with double quantum dots(DQDs) are investigated.Results show that the transmission coefficients exhibit the irregular oscillation.Som...Ballistic thermal transport properties in a cylindrical quantum structure modulated with double quantum dots(DQDs) are investigated.Results show that the transmission coefficients exhibit the irregular oscillation.Some resonant transmission peaks and stop-frequency gaps can be observed,and the number and positions of these peaks and gaps are sensitive to the sizes of DQDs.With increasing the temperature,the thermal conductance undergoes a transition from the decrease to increase,and can be efficiently tuned by modulating the radius,length of DQDs as well as the interval between DQDs.In addition,at low temperatures,the enhancement of the thermal conductance can be also observed in this case.Some similarities and differences between the cylindrical and rectangular structures are identified.展开更多
Gallium nitride （GaN） based light-emitting diodes （LEDs） with chirped multiple quantum well （MQW） structures have been investigated experimentally and numerically in this paper. Compared to conventional LEDs wit...Gallium nitride （GaN） based light-emitting diodes （LEDs） with chirped multiple quantum well （MQW） structures have been investigated experimentally and numerically in this paper. Compared to conventional LEDs with uniform quantum wells （QWs）, LEDs with chirped MQW structures have better internal quantum efficiency （IQE） and carrier injection efficiency. The droop ratios of LEDs with chirped MQW structures show a remarkable improvement at 600 mA/mm2, reduced down from 28.6% （conventional uniform LEDs） to 23.7% （chirped MQWs-a） and 18.6% （chirped MQWs-b）, respectively. Meanwhile, the peak IQE increases from 76.9% （uniform LEDs） to 83.7% （chirped MQWs-a） and 88.6% （chirped MQWs-b）. The reservoir effect of chirped MQW structures is the significant reason as it could increase hole injection efficiency and radiative recombination. The leakage current and Auger recombination of chirped MQW structures can also be suppressed. Furthermore, the chirped MQWs-b structure with lower potential barriers can enhance the reservoir effect and obtain further improvement of the carrier injection efficiency and radiative recombination, as well as further suppressing efficiency droop.展开更多
The anomalous dimensions of the quantum fields are the Hausdorff dimensiongrad. The present candidate of the renormalization constant is the generalized Cantor discontinuum. The Hausdorff dimensiongrad of the Minkowsk...The anomalous dimensions of the quantum fields are the Hausdorff dimensiongrad. The present candidate of the renormalization constant is the generalized Cantor discontinuum. The Hausdorff dimensiongrad of the Minkowski space time is based upon the point set with σ-length on light cone.展开更多
Photoluminescence(PL)was investigated as functions of the excitation intensity and temperature for a coupling surface quantum dots(SQDs)structure which consists of one In_(0.3)Ga_(0.7)As SQDs layer being stacked on mu...Photoluminescence(PL)was investigated as functions of the excitation intensity and temperature for a coupling surface quantum dots(SQDs)structure which consists of one In_(0.3)Ga_(0.7)As SQDs layer being stacked on multi-layers of In_(0.3)Ga_(0.7)As buried quantum dots(BQDs).Accompanied by considering the localized excitons effect induced by interface fluctuation,carrier transition between BQDs and SQDs were analyzed carefully.The PL measurements confirm that there is a strong carrier transition from BQDs to SQDs and this transition leads to obvious different PL characteristics between BQDs and SQDs.These results are useful for future application of SQDs as surface sensitive sensors.展开更多
We investigate metallic microdisk-size dependence of quantum dot （QD） spontaneous emission rate and micro- antenna directional emission effect for the hybrid metM-distributed Bragg reflector structures based on a pa...We investigate metallic microdisk-size dependence of quantum dot （QD） spontaneous emission rate and micro- antenna directional emission effect for the hybrid metM-distributed Bragg reflector structures based on a particular single QD emission. It is found that the measured photolumineseence （PL） intensity is very sensitive to the size of metMlic disk, showing an enhancement factor of 11 when the optimal disk diameter is 2μm and the numerical aperture of microscope objective NA=0.5. It is found that for large metal disks, the Purcell effect is dominant for enhanced PL intensity, whereas for small size disks the main contribution comes from plasmon scattering at the disk edge within the light cone collected by the microscope objective.展开更多
We consider an entangled Ising-XY Z diamond chain structure. Quantum correlations for this model are inves- tigated by using quantum discord and trace distance discord. Quantum correlations are obtained for different ...We consider an entangled Ising-XY Z diamond chain structure. Quantum correlations for this model are inves- tigated by using quantum discord and trace distance discord. Quantum correlations are obtained for different values of the anisotropy parameter, magnetic field and temperature. By comparison between quantum correlations, we show that the trace distance discord is always larger than quantum discord. Finally, some novel effects such as increasing the quantum correlations with temperature and constructive role of anisotropy parameter, which may play to the quantum correlations, are observed.展开更多
The electronic structure and spectra of [Mo3O4-nSn]^(4+)(n=0-4) cations were calculated by means of INDO/CI quantum chemistry method to account for the experimental data of their spectra in water solutions.
Quasi-two-dimensional(2D)perovskite embodies characteristics of both three-dimensional(3D)and 2D perovskites,achieving the superior external environment stability structure of 2D perovskites alongside the high efficie...Quasi-two-dimensional(2D)perovskite embodies characteristics of both three-dimensional(3D)and 2D perovskites,achieving the superior external environment stability structure of 2D perovskites alongside the high efficiency of 3D perovskites.This effect is realized through critical structural modifications in device fabrication.Typically,perovskites have an octahedral structure,generally ABX3,where an organic ammonium cation(A’)participates in forming the perovskite structure,with A’_(n)(n=1 or 2)sandwiched between A_(n-1)B_(n)X_(3n+1)perovskite layers.Depending on whether A’is a monovalent or divalent cation,2D perovskites are classified into Ruddlesden-Popper perovskite or Dion-Jacobson perovskite,each generating different structures.Although each structure achieves similar effects,they incorporate distinct mechanisms in their formation.And according to these different structures,various properties appear,and additive and optimizing methods to increase the efficiency of 3D perovskites also exist in 2D perovskites.In this review,scientific understanding and engineering perspectives of the quasi-2D perovskite is investigated,and the optimal structure quasi-2D and the device optimization is also discussed to provide the insight in the field.展开更多
Calculations of electronic structures about the semiconductor quantum dot and the semiconductor quantum ring are presented in this paper. To reduce the calculation costs, for the quantum dot and the quantum ring, thei...Calculations of electronic structures about the semiconductor quantum dot and the semiconductor quantum ring are presented in this paper. To reduce the calculation costs, for the quantum dot and the quantum ring, their simplified axially symmetric shapes are utilized in our analysis. The energy dependent effective mass is taken into account in solving the Schrodinger equations in the single band effective mass approximation. The calculated results show that the energy dependent effective mass should be considered only for relatively small volume quantum dots or small quantum rings. For large size quantum materials, both the energy dependent effective mass and the parabolic effective mass can give the same results. The energy states and the effective masses of the quantum dot and the quantum ring as a function of geometric parameters are also discussed in detail.展开更多
The mathematical expression of the electron diffusion and drift length LDE of exponential doping photocathode is deduced. In the quantum efficiency equation of the reflection-mode uniform doping cathode, substituting ...The mathematical expression of the electron diffusion and drift length LDE of exponential doping photocathode is deduced. In the quantum efficiency equation of the reflection-mode uniform doping cathode, substituting LDE for LD, the equivalent quantum efficiency equation of the reflection-mode exponential doping cathode is obtained. By using the equivalent equation, theoretical simulation and experimental analysis shows that the equivalent index formula and formula-doped cathode quantum efficiency results in line. The equivalent equation avoids complicated calculation, thereby simplifies the process of solving the quantum efficiency of exponential doping photocathode.展开更多
We propose an optically pumped nonpolar GaN/AlGaN quantum well（QW） active region design for terahertz（THz） lasing in the wavelength range of 30 μm～ 40 μm and operating at room temperature.The fast longitudinal ...We propose an optically pumped nonpolar GaN/AlGaN quantum well（QW） active region design for terahertz（THz） lasing in the wavelength range of 30 μm～ 40 μm and operating at room temperature.The fast longitudinal optical（LO） phonon scattering in GaN/AlGaN QWs is used to depopulate the lower laser state,and more importantly,the large LO phonon energy is utilized to reduce the thermal population of the lasing states at high temperatures.The influences of temperature and pump intensity on gain and electron densities are investigated.Based on our simulations,we predict that with a sufficiently high pump intensity,a room temperature operated THz laser using a nonpolar GaN/AlGaN structure is realizable.展开更多
The optical feedback modulations of a passively mode-locked semiconductor laser with quantum dot structure were investigated in this study. The delay-induced dynamics of QD MLL under the condition of optical feedback ...The optical feedback modulations of a passively mode-locked semiconductor laser with quantum dot structure were investigated in this study. The delay-induced dynamics of QD MLL under the condition of optical feedback have been studied by exploiting a time domain traveling wave(TDTW) model. The conventional TDTW model was improved to make it suitable for studying optical feedback system, especially the system with long external cavity structure. Combing the TDTW model with optical feedback and carrier rate equations, the pulse variation of a single section QD MLL was studied. This new model shows good agreement with the published experimental data. The roundtrip time and local light intensity modulation to the pulse evolution of QD MLL were studied. The results show that when the time for a light to go to and return from external cavity is equal to the integral times of the period of laser pulse without external feedback, resonance will be formed, and the period of pulse sequence is the shortest. The results also show that the stronger the local light intensity modulation is, the shorter the pulse period is.展开更多
Abstract: Organic multiple quantum well(OMQ) structures consisting of alternating layers of tris(8 - quinolinolato)aluminum( ff) (Alq3) and 2 - (4 - biphenylyl) -5 - (4 - ter - butylphenyl) -(1,3,3- oxadiazole) (PBD) ...Abstract: Organic multiple quantum well(OMQ) structures consisting of alternating layers of tris(8 - quinolinolato)aluminum( ff) (Alq3) and 2 - (4 - biphenylyl) -5 - (4 - ter - butylphenyl) -(1,3,3- oxadiazole) (PBD) have been fabricated by organic molecular beam deposition (OMBD). The individual layer thickness in the multilayer samples was varied from 6 nm to 20 nm. The multiple quantum well structures were determined by low angle X - ray diffraction, optical absorption and photolumi-nescence(PL). The PL spectra narrow and the emission energy has been observed to shift to higher energy compared with that in the monolayer structure, suggesting a quantum size effect.展开更多
This paper presents the development of a conceptual model of the universe,grounded in the Fine Structure Constant(α≈137.036).The Extended Fine Structure Constant(eFSC)Model exploresαas a function of twin prime mi-c...This paper presents the development of a conceptual model of the universe,grounded in the Fine Structure Constant(α≈137.036).The Extended Fine Structure Constant(eFSC)Model exploresαas a function of twin prime mi-croverses(U{137},whereα=137,and U{139},whereα=139),each defined by n-dimensional sets of prime numbers.Property counts for U{137}and U{139}are used in a modified Difference over Sum(DoS)calculation to ap-proximate the fractional component ofα,yielding a Relative Electromagnetic Force(EMF)value ofαII=0.036.Applying this method to additional twin prime pairs produces a distribution of EMF values that reflect the energy pro-files of known Standard Model forces,identifying the strong force as a triad of overlapping EM interactions,and linking the weak force to particle transitions involving neutrons,protons,electrons,and neutrinos.The model provides a conceptual framework for investigating the Higgs mechanism,quantum or-bital structures,quantum entanglement,and potential explanations for grav-ity,dark matter,dark energy,and time dilation.While not intended to supplant any existing physics,the eFSC Model offers a novel,prime-number-based archi-tecture for interpreting the quantum universe through a classical lens.展开更多
In this Letter, the loss and gain characteristics of an unconventional InxGa1-xAs∕Ga As asymmetrical step well structure consisting of variable indium contents of InxGa1-xAs materials are measured and analyzed for th...In this Letter, the loss and gain characteristics of an unconventional InxGa1-xAs∕Ga As asymmetrical step well structure consisting of variable indium contents of InxGa1-xAs materials are measured and analyzed for the first time, to the best of our knowledge. This special well structure is formed based on the indium-rich effect from the material growth process. The loss and gain are obtained by optical pumping and photoluminescence（PL）spectrum measurement at dual facets of an edge-emitting device. Unlike conventional quasi-rectangle wells, the asymmetrical step well may lead to a hybrid strain configuration containing both compressive and tensile strains and, thus, special loss and gain characteristics. The results will be very helpful in the development of multiple wavelength In Ga As-based semiconductor lasers.展开更多
The 810-nm InGaAlAs/AlGaAs double quantum well （QW） semiconductor lasers with asymmetric waveguide structures, grown by molecular beam epitaxy, show high quantum efficiency and high-power conver- sion efficiency at ...The 810-nm InGaAlAs/AlGaAs double quantum well （QW） semiconductor lasers with asymmetric waveguide structures, grown by molecular beam epitaxy, show high quantum efficiency and high-power conver- sion efficiency at continuous-wave （CW） power output. The threshold current density and slope efficiency of the device are 180 A/cm^2 and 1.3 W/A, respectively. The internal loss and the internal quantum efficiency are 1.7 cm^-1 and 93%, respectively. The 70% maximum power conversion efficiency is achieved with narrow far-field patterns.展开更多
We report our recent progress of investigations on InGaN-based blue-violet laser diodes （LDs）. The roomtemperature （RT） cw operation lifetime of LDs has extended to longer than 15.6 h. The LD structure was grown o...We report our recent progress of investigations on InGaN-based blue-violet laser diodes （LDs）. The roomtemperature （RT） cw operation lifetime of LDs has extended to longer than 15.6 h. The LD structure was grown on a c-plane free-standing （FS） GaN substrate by metal organic chemical vapor deposition （MOCVD）. The typical threshold current and voltage of LD under RT cw operation are 78 mA and 6.8 V, respectively. The experimental analysis of degradation of LD performances suggests that after aging treatment, the increase of series resistance and threshold current can be mainly attributed to the deterioration of p-type ohmic contact and the decrease of internal quantum efticiency of multiple quantum well （MQW）, respectively.展开更多
We report on the growth and fabrication of deep ultraviolet （DUV） light emitting diodes （LEDs） on an AIN template which was grown on a pulsed atomic-layer epitaxial buffer layer. Threading dislocation densities i...We report on the growth and fabrication of deep ultraviolet （DUV） light emitting diodes （LEDs） on an AIN template which was grown on a pulsed atomic-layer epitaxial buffer layer. Threading dislocation densities in the AlN layer are greatly decreased with the introduction of this buffer layer. The crystalline quality of the AlGaN epilayer is further improved by using a low-temperature GaN interlayer between AlGaN and AlN. Electroluminescences of different DUV-LED devices at a wavelength of between 262 and 317nm are demonstrated. To improve the hole concentration of p-type AlGaN, Mg-doping with trimethylindium assistance approach is performed. It is found that the serial resistance of DUV-LED decreases and the performance of DUV-LED such as EL properties is improved.展开更多
A type of multi-core Er-doped photosensitive silica optical fiber （MC-EDPF） is proposed and fabricated, in which a high consistency Er-doped core is surrounded by six high consistency Ge-doped cores. The multi-core ...A type of multi-core Er-doped photosensitive silica optical fiber （MC-EDPF） is proposed and fabricated, in which a high consistency Er-doped core is surrounded by six high consistency Ge-doped cores. The multi-core design can overcome the difficulties encountered in the design and fabrication of single-core EDPFs through a modified chemical vapor deposition method combined with solution doping technology, and there is a conflict between high consistency Er doping and high consistency Ce doping. The absorption of MC-EDPFs achieved 15.876dB/m at 1550mm and lOdB/m at 98Ohm. The refleetivity of the fiber Bragg gratings （FBCs） written directly on the MC-EDPFs is as much as 96.84%.展开更多
基金supported by the National 111 Center(Grant No.B12026)Research on***Technology of Intelligent Reconfigurable General System(Grant No.F020250058)。
文摘The design strategy and efficiency optimization of a Ge-based n-type metal-oxide-semiconductor field-effect transistor(n-MOSFET)with a Si_(0.14)Ge_(0.72)Sn_(0.14)-Ge_(0.82)Sn_(0.18)-Ge quantum structure used for 2.45 GHz weak energy microwave wireless energy transmission is reported.The quantum structure combined withδ-doping technology is used to reduce the scattering of the device and improve its electron mobility;at the same time,the generation of surface channels is suppressed by the Si_(0.14)Ge_(0.72)Sn_(0.14) cap layer.By adjusting the threshold voltage of the device to 91 mV,setting the device aspect ratio to 1μm/0.4μm and adopting a novel diode connection method,the rectification efficiency of the device is improved.With simulation by Silvaco TCAD software,good performance is displayed in the transfer and output characteristics.For a simple half-wave rectifier circuit with a load of 1 pf and 20 kΩ,the rectification efficiency of the device can reach 7.14%at an input power of-10 dBm,which is 4.2 times that of a Si MOSFET(with a threshold voltage of 80 mV)under the same conditions;this device shows a better rectification effect than a Si MOSFET in the range of-30 dBm to 6.9 dBm.
基金supported by the National Natural Science Foundation of China (Grant No.11204074)
文摘Ballistic thermal transport properties in a cylindrical quantum structure modulated with double quantum dots(DQDs) are investigated.Results show that the transmission coefficients exhibit the irregular oscillation.Some resonant transmission peaks and stop-frequency gaps can be observed,and the number and positions of these peaks and gaps are sensitive to the sizes of DQDs.With increasing the temperature,the thermal conductance undergoes a transition from the decrease to increase,and can be efficiently tuned by modulating the radius,length of DQDs as well as the interval between DQDs.In addition,at low temperatures,the enhancement of the thermal conductance can be also observed in this case.Some similarities and differences between the cylindrical and rectangular structures are identified.
基金supported by the National High Technology Research and Development Program of China(Grant No.2014AA032608)the Key Laboratory for Mechanical Behavior of Material of Xi’an Jiaotong University,China(Grant No.20121201)the Fundamental Research Funds for the Central Universities,China
文摘Gallium nitride （GaN） based light-emitting diodes （LEDs） with chirped multiple quantum well （MQW） structures have been investigated experimentally and numerically in this paper. Compared to conventional LEDs with uniform quantum wells （QWs）, LEDs with chirped MQW structures have better internal quantum efficiency （IQE） and carrier injection efficiency. The droop ratios of LEDs with chirped MQW structures show a remarkable improvement at 600 mA/mm2, reduced down from 28.6% （conventional uniform LEDs） to 23.7% （chirped MQWs-a） and 18.6% （chirped MQWs-b）, respectively. Meanwhile, the peak IQE increases from 76.9% （uniform LEDs） to 83.7% （chirped MQWs-a） and 88.6% （chirped MQWs-b）. The reservoir effect of chirped MQW structures is the significant reason as it could increase hole injection efficiency and radiative recombination. The leakage current and Auger recombination of chirped MQW structures can also be suppressed. Furthermore, the chirped MQWs-b structure with lower potential barriers can enhance the reservoir effect and obtain further improvement of the carrier injection efficiency and radiative recombination, as well as further suppressing efficiency droop.
文摘The anomalous dimensions of the quantum fields are the Hausdorff dimensiongrad. The present candidate of the renormalization constant is the generalized Cantor discontinuum. The Hausdorff dimensiongrad of the Minkowski space time is based upon the point set with σ-length on light cone.
基金supported by the National Natural Science Foundation of China(Nos.U1304608 and 61774053)the Project of Henan Provincial Department of Science and Technology(No.182102410047)the Program of Henan Polytechnic University(No.B2014-020)。
文摘Photoluminescence(PL)was investigated as functions of the excitation intensity and temperature for a coupling surface quantum dots(SQDs)structure which consists of one In_(0.3)Ga_(0.7)As SQDs layer being stacked on multi-layers of In_(0.3)Ga_(0.7)As buried quantum dots(BQDs).Accompanied by considering the localized excitons effect induced by interface fluctuation,carrier transition between BQDs and SQDs were analyzed carefully.The PL measurements confirm that there is a strong carrier transition from BQDs to SQDs and this transition leads to obvious different PL characteristics between BQDs and SQDs.These results are useful for future application of SQDs as surface sensitive sensors.
基金Supported by the National Key Basic Research Program of China under Grant No 2013CB922304the National Natural Science Foundation of China under Grant Nos 11474275 and 11464034
文摘We investigate metallic microdisk-size dependence of quantum dot （QD） spontaneous emission rate and micro- antenna directional emission effect for the hybrid metM-distributed Bragg reflector structures based on a particular single QD emission. It is found that the measured photolumineseence （PL） intensity is very sensitive to the size of metMlic disk, showing an enhancement factor of 11 when the optimal disk diameter is 2μm and the numerical aperture of microscope objective NA=0.5. It is found that for large metal disks, the Purcell effect is dominant for enhanced PL intensity, whereas for small size disks the main contribution comes from plasmon scattering at the disk edge within the light cone collected by the microscope objective.
基金Supported by the Azerbaijan Shahid Madani University
文摘We consider an entangled Ising-XY Z diamond chain structure. Quantum correlations for this model are inves- tigated by using quantum discord and trace distance discord. Quantum correlations are obtained for different values of the anisotropy parameter, magnetic field and temperature. By comparison between quantum correlations, we show that the trace distance discord is always larger than quantum discord. Finally, some novel effects such as increasing the quantum correlations with temperature and constructive role of anisotropy parameter, which may play to the quantum correlations, are observed.
文摘The electronic structure and spectra of [Mo3O4-nSn]^(4+)(n=0-4) cations were calculated by means of INDO/CI quantum chemistry method to account for the experimental data of their spectra in water solutions.
基金the Research Grant of Kwangwoon University in 2024 and the National Research Foundation of Korea(RS-2023-00236572 and RS-2023-00212110)funded by the Korea government(MSIT)the project for Collabo R&D between Industry,University,and Research Institute(RS-2024-00414524)funded by Korea Ministry of SMEs and Startups.
文摘Quasi-two-dimensional(2D)perovskite embodies characteristics of both three-dimensional(3D)and 2D perovskites,achieving the superior external environment stability structure of 2D perovskites alongside the high efficiency of 3D perovskites.This effect is realized through critical structural modifications in device fabrication.Typically,perovskites have an octahedral structure,generally ABX3,where an organic ammonium cation(A’)participates in forming the perovskite structure,with A’_(n)(n=1 or 2)sandwiched between A_(n-1)B_(n)X_(3n+1)perovskite layers.Depending on whether A’is a monovalent or divalent cation,2D perovskites are classified into Ruddlesden-Popper perovskite or Dion-Jacobson perovskite,each generating different structures.Although each structure achieves similar effects,they incorporate distinct mechanisms in their formation.And according to these different structures,various properties appear,and additive and optimizing methods to increase the efficiency of 3D perovskites also exist in 2D perovskites.In this review,scientific understanding and engineering perspectives of the quasi-2D perovskite is investigated,and the optimal structure quasi-2D and the device optimization is also discussed to provide the insight in the field.
基金Project supported by the National Basic Research Program of China (Grant No 2003CB314901)the National Natural Science Foundation of China (Grant No 60644004)the High School Innovation and Introducing Talent Project of China (B07005)
文摘Calculations of electronic structures about the semiconductor quantum dot and the semiconductor quantum ring are presented in this paper. To reduce the calculation costs, for the quantum dot and the quantum ring, their simplified axially symmetric shapes are utilized in our analysis. The energy dependent effective mass is taken into account in solving the Schrodinger equations in the single band effective mass approximation. The calculated results show that the energy dependent effective mass should be considered only for relatively small volume quantum dots or small quantum rings. For large size quantum materials, both the energy dependent effective mass and the parabolic effective mass can give the same results. The energy states and the effective masses of the quantum dot and the quantum ring as a function of geometric parameters are also discussed in detail.
基金Supported by the National Natural Science Foundation of China under Grant No 60678043.
文摘The mathematical expression of the electron diffusion and drift length LDE of exponential doping photocathode is deduced. In the quantum efficiency equation of the reflection-mode uniform doping cathode, substituting LDE for LD, the equivalent quantum efficiency equation of the reflection-mode exponential doping cathode is obtained. By using the equivalent equation, theoretical simulation and experimental analysis shows that the equivalent index formula and formula-doped cathode quantum efficiency results in line. The equivalent equation avoids complicated calculation, thereby simplifies the process of solving the quantum efficiency of exponential doping photocathode.
基金Project supported in part by the National Major Basic Research Program of China (Grant No. 2011CB925603)the Shanghai Municipal Major Basic Research Project (Grant No. 09DJ1400102)
文摘We propose an optically pumped nonpolar GaN/AlGaN quantum well（QW） active region design for terahertz（THz） lasing in the wavelength range of 30 μm～ 40 μm and operating at room temperature.The fast longitudinal optical（LO） phonon scattering in GaN/AlGaN QWs is used to depopulate the lower laser state,and more importantly,the large LO phonon energy is utilized to reduce the thermal population of the lasing states at high temperatures.The influences of temperature and pump intensity on gain and electron densities are investigated.Based on our simulations,we predict that with a sufficiently high pump intensity,a room temperature operated THz laser using a nonpolar GaN/AlGaN structure is realizable.
基金Sponsored by the Research Project of Xiamen University of Technology(Grant No.KCZX2019148)the Research Project of Xiamen Municipal Bureau of Science and Technology(Grant No.3502Z20193055)。
文摘The optical feedback modulations of a passively mode-locked semiconductor laser with quantum dot structure were investigated in this study. The delay-induced dynamics of QD MLL under the condition of optical feedback have been studied by exploiting a time domain traveling wave(TDTW) model. The conventional TDTW model was improved to make it suitable for studying optical feedback system, especially the system with long external cavity structure. Combing the TDTW model with optical feedback and carrier rate equations, the pulse variation of a single section QD MLL was studied. This new model shows good agreement with the published experimental data. The roundtrip time and local light intensity modulation to the pulse evolution of QD MLL were studied. The results show that when the time for a light to go to and return from external cavity is equal to the integral times of the period of laser pulse without external feedback, resonance will be formed, and the period of pulse sequence is the shortest. The results also show that the stronger the local light intensity modulation is, the shorter the pulse period is.
文摘Abstract: Organic multiple quantum well(OMQ) structures consisting of alternating layers of tris(8 - quinolinolato)aluminum( ff) (Alq3) and 2 - (4 - biphenylyl) -5 - (4 - ter - butylphenyl) -(1,3,3- oxadiazole) (PBD) have been fabricated by organic molecular beam deposition (OMBD). The individual layer thickness in the multilayer samples was varied from 6 nm to 20 nm. The multiple quantum well structures were determined by low angle X - ray diffraction, optical absorption and photolumi-nescence(PL). The PL spectra narrow and the emission energy has been observed to shift to higher energy compared with that in the monolayer structure, suggesting a quantum size effect.
文摘This paper presents the development of a conceptual model of the universe,grounded in the Fine Structure Constant(α≈137.036).The Extended Fine Structure Constant(eFSC)Model exploresαas a function of twin prime mi-croverses(U{137},whereα=137,and U{139},whereα=139),each defined by n-dimensional sets of prime numbers.Property counts for U{137}and U{139}are used in a modified Difference over Sum(DoS)calculation to ap-proximate the fractional component ofα,yielding a Relative Electromagnetic Force(EMF)value ofαII=0.036.Applying this method to additional twin prime pairs produces a distribution of EMF values that reflect the energy pro-files of known Standard Model forces,identifying the strong force as a triad of overlapping EM interactions,and linking the weak force to particle transitions involving neutrons,protons,electrons,and neutrinos.The model provides a conceptual framework for investigating the Higgs mechanism,quantum or-bital structures,quantum entanglement,and potential explanations for grav-ity,dark matter,dark energy,and time dilation.While not intended to supplant any existing physics,the eFSC Model offers a novel,prime-number-based archi-tecture for interpreting the quantum universe through a classical lens.
基金supported by the National Natural Science Foundation of China under Grant Nos.61376067 and61474118
文摘In this Letter, the loss and gain characteristics of an unconventional InxGa1-xAs∕Ga As asymmetrical step well structure consisting of variable indium contents of InxGa1-xAs materials are measured and analyzed for the first time, to the best of our knowledge. This special well structure is formed based on the indium-rich effect from the material growth process. The loss and gain are obtained by optical pumping and photoluminescence（PL）spectrum measurement at dual facets of an edge-emitting device. Unlike conventional quasi-rectangle wells, the asymmetrical step well may lead to a hybrid strain configuration containing both compressive and tensile strains and, thus, special loss and gain characteristics. The results will be very helpful in the development of multiple wavelength In Ga As-based semiconductor lasers.
文摘The 810-nm InGaAlAs/AlGaAs double quantum well （QW） semiconductor lasers with asymmetric waveguide structures, grown by molecular beam epitaxy, show high quantum efficiency and high-power conver- sion efficiency at continuous-wave （CW） power output. The threshold current density and slope efficiency of the device are 180 A/cm^2 and 1.3 W/A, respectively. The internal loss and the internal quantum efficiency are 1.7 cm^-1 and 93%, respectively. The 70% maximum power conversion efficiency is achieved with narrow far-field patterns.
基金Supported by the National Natural Science Foundation of China under Grant Nos 60976045, 60506001, 60776047 and 60836003, and the National Basic Research Program of China under Grant No 2007CB936700.
文摘We report our recent progress of investigations on InGaN-based blue-violet laser diodes （LDs）. The roomtemperature （RT） cw operation lifetime of LDs has extended to longer than 15.6 h. The LD structure was grown on a c-plane free-standing （FS） GaN substrate by metal organic chemical vapor deposition （MOCVD）. The typical threshold current and voltage of LD under RT cw operation are 78 mA and 6.8 V, respectively. The experimental analysis of degradation of LD performances suggests that after aging treatment, the increase of series resistance and threshold current can be mainly attributed to the deterioration of p-type ohmic contact and the decrease of internal quantum efticiency of multiple quantum well （MQW）, respectively.
基金Supported by the National Natural Science Foundation of China under Grant Nos 10774001, 60736033, 60776041 and 60876041, and National Basic Research Program of China under Grant Nos 2006CB604908 and 2006CB921607, and the National Key Basic R＆D Plan of China under Grant Nos TG2007CB307004.
文摘We report on the growth and fabrication of deep ultraviolet （DUV） light emitting diodes （LEDs） on an AIN template which was grown on a pulsed atomic-layer epitaxial buffer layer. Threading dislocation densities in the AlN layer are greatly decreased with the introduction of this buffer layer. The crystalline quality of the AlGaN epilayer is further improved by using a low-temperature GaN interlayer between AlGaN and AlN. Electroluminescences of different DUV-LED devices at a wavelength of between 262 and 317nm are demonstrated. To improve the hole concentration of p-type AlGaN, Mg-doping with trimethylindium assistance approach is performed. It is found that the serial resistance of DUV-LED decreases and the performance of DUV-LED such as EL properties is improved.
基金Supported by the National High Technology Research and Development Program of China under Grant No 2007AA01Z258, the National Natural Science Foundation of China under Grant Nos 60807013 and 60837002.
文摘A type of multi-core Er-doped photosensitive silica optical fiber （MC-EDPF） is proposed and fabricated, in which a high consistency Er-doped core is surrounded by six high consistency Ge-doped cores. The multi-core design can overcome the difficulties encountered in the design and fabrication of single-core EDPFs through a modified chemical vapor deposition method combined with solution doping technology, and there is a conflict between high consistency Er doping and high consistency Ce doping. The absorption of MC-EDPFs achieved 15.876dB/m at 1550mm and lOdB/m at 98Ohm. The refleetivity of the fiber Bragg gratings （FBCs） written directly on the MC-EDPFs is as much as 96.84%.
