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A Comparative Study of Majority/Minority Logic Circuit Synthesis Methods for Post-CMOS Nanotechnologies 被引量:1
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作者 Amjad Almatrood Harpreet Singh 《Engineering(科研)》 2017年第10期890-915,共26页
The physical limitations of complementary metal-oxide semiconductor?(CMOS) technology have led many researchers to consider other alternative technologies. Quantum-dot cellular automate (QCA), single electron tunnelin... The physical limitations of complementary metal-oxide semiconductor?(CMOS) technology have led many researchers to consider other alternative technologies. Quantum-dot cellular automate (QCA), single electron tunneling (SET), tunneling phase logic (TPL), spintronic devices, etc., are some of the nanotechnologies that are being considered as possible replacements for CMOS. In these nanotechnologies, the basic logic units used to implement circuits are majority and/or minority gates. Several majority/minority logic circuit synthesis methods have been proposed. In this paper, we give a comparative study of the existing majority/minority logic circuit synthesis methods that are capable of synthesizing multi-input multi-output Boolean functions. Each of these methods is discussed in detail. The optimization priorities given to different factors such as gates, levels, inverters, etc., vary with technologies. Based on these optimization factors, the results obtained from different synthesis methods are compared. The paper also analyzes the optimization capabilities of different methods and discusses directions for future research in the synthesis of majority/minority logic networks. 展开更多
关键词 LOGIC Design LOGIC Optimization MAJORITY LOGIC CIRCUITS post-cmos Technologies
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一种高性能横向接触式微机械RF开关的分析与设计 被引量:2
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作者 范炜 郭会勇 +1 位作者 施文典 陈兢 《纳米技术与精密工程》 CAS CSCD 2006年第1期46-53,共8页
设计了一种新型横向接触式微机械RF开关,描述了其结构和工作原理.采用以电镀为主的工艺流程,并利用SU8光刻胶实现特殊器件结构,可实现Post-CMOS集成.利用模拟软件CoventorWare 2004和MEMS Pro 5.0 (包含 ANSYS 8.0)协同设计,对该器... 设计了一种新型横向接触式微机械RF开关,描述了其结构和工作原理.采用以电镀为主的工艺流程,并利用SU8光刻胶实现特殊器件结构,可实现Post-CMOS集成.利用模拟软件CoventorWare 2004和MEMS Pro 5.0 (包含 ANSYS 8.0)协同设计,对该器件进行了静态、模态和瞬态分析,得到吸合电压和吸合时间等重要性能参数.尤其在瞬态分析时运用了集总参数建模的方法,简化了计算.该器件的吸合电压低于30 V,在驱动电压为50 V的情况下,吸合时间达到16.1 ms. 展开更多
关键词 微机电系统 RF开关 吸合 瞬态模拟 集总参数分析 post-cmos
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