A complete closed-loop third order s-domain model is analyzed for a frequency synthesizer. Based on the model and root-locus technique, the procedure for parameters design is described, and the relationship between th...A complete closed-loop third order s-domain model is analyzed for a frequency synthesizer. Based on the model and root-locus technique, the procedure for parameters design is described, and the relationship between the process,voltage,and temperature variation of parameters and the loop stability is quantitatively analyzed. A variation margin is proposed for stability compensation. Furthermore,a simple adjustable current cell in the charge pump is proposed for additional stability compensation and a novel VCO with linear gain is adopted to limit the total variation. A fully integrated frequency synthesizer from 1 to 1.05GHz with 250kHz channel resolution is implemented to verify the methods.展开更多
The use of Internet of Things(IoT)applications become dominant in many systems.Its on-chip data processing and computations are also increasing consistently.The battery enabled and low leakage memory system at subthre...The use of Internet of Things(IoT)applications become dominant in many systems.Its on-chip data processing and computations are also increasing consistently.The battery enabled and low leakage memory system at subthreshold regime is a critical requirement for these IoT applications.The cache memory designed on Static Random-Access Memory(SRAM)cell with features such as low power,high speed,and process tolerance are highly important for the IoT memory system.Therefore,a process tolerant SRAM cell with low power,improved delay and better stability is presented in this research paper.The proposed cell comprises 11 transistors designed with symmetric approach for write operations and single ended circuit for read operations that exhibits an average dynamic power saving of 43.55%and 47.75%for write and 35.59%and 36.56%for read operations compared to 6 T and 8 T SRAM cells.The cell shows an improved write delay of 26.46%and 37.16%over 6 T and 8T and read delay is lowered by 50.64%and 72.90%against 6 T and 10 T cells.The symmetric design used in core latch to improve the write noise margin(WNM)by 17.78%and 6.67%whereas the single ended separate read circuit improves the Read Static Noise Margin(RSNM)by 1.88x and 0.33x compared to 6 T and 8T cells.The read power delay product and write power delay product are lower by 1.94x,1.39x and 0.17x,2.02x than 6 T and 8 T cells respectively.The lower variability from 5000 samples validates the robustness of the proposed cell.The simulations are carried out in Cadence virtuoso simulator tool with Generic Process Design Kit(GPDK)45 nm technology file in this work.展开更多
A sub-mA phase-locked loop fabricated in a 65nm standard digital CMOS process is presented. The impact of process variation is largely removed by a novel open-loop calibration that is performed only during start-up bu...A sub-mA phase-locked loop fabricated in a 65nm standard digital CMOS process is presented. The impact of process variation is largely removed by a novel open-loop calibration that is performed only during start-up but is opened during normal operation. This method reduces calibration time significantly compared with its closed-loop counterpart. The dual-loop PLL architecture is adopted to achieve a process-independent damping factor and pole-zero separation. A new phase frequency detector embedded with a level shifter is introduced. Careful power partitioning is explored to minimize the noise coupling. The proposed PLL achieves 3. lps RMS jitter running at 1.6GHz while consuming only 0.94mA.展开更多
We propose a hierarchical interconnection network with two-phase bufferless resonant clock distribution, which mixes the advantages of mesh and tree architectures.The problems of skew reduction and variation-tolerance...We propose a hierarchical interconnection network with two-phase bufferless resonant clock distribution, which mixes the advantages of mesh and tree architectures.The problems of skew reduction and variation-tolerance in the mixed interconnection network are studied through a pipelined multiplier under a TSMC 65 nm standard CMOS process.The post-simulation results show that the hierarchical architecture reduces more than 75% and 65%of clock skew compared with pure mesh and pure H-tree networks,respectively.The maximum skew in the proposed clock distribution is less than 7 ps under imbalanced loading and PVT variations,which is no more than 1%of the clock cycle of about 760 ps.展开更多
In this paper, a novel hybrid digital-controlled oscillator（DCO） is proposed, which is used to improve the accuracy of the all-digital clock generator without reference source. The DCO with hybrid architecture consi...In this paper, a novel hybrid digital-controlled oscillator（DCO） is proposed, which is used to improve the accuracy of the all-digital clock generator without reference source. The DCO with hybrid architecture consists of two parts： DCO_high and DCO_low. The DCO_high decides the coarse output frequency of DCO, and adopts the cascade structure to decrease the area. The DCO_low adopts the chain structure with three-state buffer, and decides the fine output frequency of DCO. Compared with traditional cascade DCO, the proposed hybrid DCO features higher precision with less inherent delay. Therefore the clock generator can tolerate process, voltage and temperature（PVT） variation and meet the needs of different conditions. The DCO is designed in SMIC 180 nm CMOS process with 0.021 mm^2 chip area. The output frequency is adjusted from 15–120 MHz. The frequency error is less than 0.83% at 25 MHz with 1.6–1.8 V supply voltage and 0–80℃ temperature variations in TT, FF,SS corners.展开更多
文摘A complete closed-loop third order s-domain model is analyzed for a frequency synthesizer. Based on the model and root-locus technique, the procedure for parameters design is described, and the relationship between the process,voltage,and temperature variation of parameters and the loop stability is quantitatively analyzed. A variation margin is proposed for stability compensation. Furthermore,a simple adjustable current cell in the charge pump is proposed for additional stability compensation and a novel VCO with linear gain is adopted to limit the total variation. A fully integrated frequency synthesizer from 1 to 1.05GHz with 250kHz channel resolution is implemented to verify the methods.
文摘The use of Internet of Things(IoT)applications become dominant in many systems.Its on-chip data processing and computations are also increasing consistently.The battery enabled and low leakage memory system at subthreshold regime is a critical requirement for these IoT applications.The cache memory designed on Static Random-Access Memory(SRAM)cell with features such as low power,high speed,and process tolerance are highly important for the IoT memory system.Therefore,a process tolerant SRAM cell with low power,improved delay and better stability is presented in this research paper.The proposed cell comprises 11 transistors designed with symmetric approach for write operations and single ended circuit for read operations that exhibits an average dynamic power saving of 43.55%and 47.75%for write and 35.59%and 36.56%for read operations compared to 6 T and 8 T SRAM cells.The cell shows an improved write delay of 26.46%and 37.16%over 6 T and 8T and read delay is lowered by 50.64%and 72.90%against 6 T and 10 T cells.The symmetric design used in core latch to improve the write noise margin(WNM)by 17.78%and 6.67%whereas the single ended separate read circuit improves the Read Static Noise Margin(RSNM)by 1.88x and 0.33x compared to 6 T and 8T cells.The read power delay product and write power delay product are lower by 1.94x,1.39x and 0.17x,2.02x than 6 T and 8 T cells respectively.The lower variability from 5000 samples validates the robustness of the proposed cell.The simulations are carried out in Cadence virtuoso simulator tool with Generic Process Design Kit(GPDK)45 nm technology file in this work.
文摘A sub-mA phase-locked loop fabricated in a 65nm standard digital CMOS process is presented. The impact of process variation is largely removed by a novel open-loop calibration that is performed only during start-up but is opened during normal operation. This method reduces calibration time significantly compared with its closed-loop counterpart. The dual-loop PLL architecture is adopted to achieve a process-independent damping factor and pole-zero separation. A new phase frequency detector embedded with a level shifter is introduced. Careful power partitioning is explored to minimize the noise coupling. The proposed PLL achieves 3. lps RMS jitter running at 1.6GHz while consuming only 0.94mA.
基金Project supported by the National Science and Technology Major Project of the Ministry of Science and Technology of China(No. 2009ZX01034-001-001-006)the National Natural Science Foundation of China(No.60906014)
文摘We propose a hierarchical interconnection network with two-phase bufferless resonant clock distribution, which mixes the advantages of mesh and tree architectures.The problems of skew reduction and variation-tolerance in the mixed interconnection network are studied through a pipelined multiplier under a TSMC 65 nm standard CMOS process.The post-simulation results show that the hierarchical architecture reduces more than 75% and 65%of clock skew compared with pure mesh and pure H-tree networks,respectively.The maximum skew in the proposed clock distribution is less than 7 ps under imbalanced loading and PVT variations,which is no more than 1%of the clock cycle of about 760 ps.
基金supported by the National Natural Science Foundation of China(Nos.61306025,61474135)
文摘In this paper, a novel hybrid digital-controlled oscillator（DCO） is proposed, which is used to improve the accuracy of the all-digital clock generator without reference source. The DCO with hybrid architecture consists of two parts： DCO_high and DCO_low. The DCO_high decides the coarse output frequency of DCO, and adopts the cascade structure to decrease the area. The DCO_low adopts the chain structure with three-state buffer, and decides the fine output frequency of DCO. Compared with traditional cascade DCO, the proposed hybrid DCO features higher precision with less inherent delay. Therefore the clock generator can tolerate process, voltage and temperature（PVT） variation and meet the needs of different conditions. The DCO is designed in SMIC 180 nm CMOS process with 0.021 mm^2 chip area. The output frequency is adjusted from 15–120 MHz. The frequency error is less than 0.83% at 25 MHz with 1.6–1.8 V supply voltage and 0–80℃ temperature variations in TT, FF,SS corners.
