Liquid phase epitaxy （LPE） is a mature technology. Early experiments on single magnetic crystal films fabricated by LPE were focused mainly on thick films for microwave and magneto-optical devices. The LPE is an exc...Liquid phase epitaxy （LPE） is a mature technology. Early experiments on single magnetic crystal films fabricated by LPE were focused mainly on thick films for microwave and magneto-optical devices. The LPE is an excellent way to make a thick film, low damping magnetic garnet film and high-quality magneto-optical material. Today, the principal challenge in the applied material is to create sub-micrometer devices by using modern photolithography technique. Until now the magnetic garnet films fabricated by LPE still show the best quality even on a nanoscale （about 100 nm）, which was considered to be impossible for LPE method.展开更多
InAsSb epilayers with a cutoff wavelength of 4.8 μm have been successfully grown on InAs substrates by one-step liquid phase epitaxy （LPE） technology. The epilayers were characterized by X-ray diffraction （XRD）, ...InAsSb epilayers with a cutoff wavelength of 4.8 μm have been successfully grown on InAs substrates by one-step liquid phase epitaxy （LPE） technology. The epilayers were characterized by X-ray diffraction （XRD）, Fourier transform infrared （PTIR） transmittance measurements and scanning electron microscopy （SEM）. The influence of different growth conditions on the optical and structural properties of the materials was studied. The results revealed that the good crystalline quality, mirror smooth surface and flat interface of InAsSb epilayers were achieved. They benefited from optimized growth conditions, i.e., sufficient homogeneity of the growth melt and a very slow cooling rate.展开更多
Two-inch Ga_2O_3 films with（ˉ201）-orientation are grown on c-sapphire at 850–1050°C by hydride vapor phase epitaxy. High-resolution x-ray diffraction shows that pure β-Ga_2O_3 with a smooth surface has a hig...Two-inch Ga_2O_3 films with（ˉ201）-orientation are grown on c-sapphire at 850–1050°C by hydride vapor phase epitaxy. High-resolution x-ray diffraction shows that pure β-Ga_2O_3 with a smooth surface has a higher crystal quality, and the Raman spectra reveal a very small residual strain in β-Ga_2O_3 grown by hydride vapor phase epitaxy compared with bulk single crystal. The optical transmittance is higher than 80% in the visible and near-UV regions, and the optical bandgap energy is calculated to be 4.9 e V.展开更多
Two strain-state samples of GaN, labelled the strain-relief sample and the quality-improved sample, were grown by hydride vapour phase epitaxy （HVPE）, and then characterized by high-resolution X-ray diffraction, pho...Two strain-state samples of GaN, labelled the strain-relief sample and the quality-improved sample, were grown by hydride vapour phase epitaxy （HVPE）, and then characterized by high-resolution X-ray diffraction, photoluminescence and optical microscopy. Two strain states of GaN in HVPE, like 3D and 2[） growth modes in metal-organic chemical vapour deposition （MOCVD）, provide an effective way to solve the heteroepitaxial problems of both strain relief and quality improvement. The gradual variation metbod （GVM）, developed based on the two strain states, is characterized by growth parameters＇ gradual variation alternating between the strain-relief growth conditions and the quality-improved growth conditions. In GVM, the introduction of the strain-relief amplitude, which is defined by the range from the quality-improved growth conditions to the strain-relief growth conditions, makes the strain-relief control concise and effective. The 300-μm thick bright and crack-free GaN film grown on a two-inch sapphire proves the effectiveness of GVM.展开更多
Aluminum nitride(AlN)is the promising substrates material for the epitaxial growth ofⅢ-nitrides devices,such as high-power,high-frequency electronic,deep ultraviolet optoelectronics and acoustic devices.However,it is...Aluminum nitride(AlN)is the promising substrates material for the epitaxial growth ofⅢ-nitrides devices,such as high-power,high-frequency electronic,deep ultraviolet optoelectronics and acoustic devices.However,it is rather difficult to obtain the high quality and crack-free thick AlN wafers because of the low surface migration of Al adatoms and the large thermal and lattice mismatches between the foreign substrates and AlN.In this work,the fabrication of AlN material by hydride vapor phase epitaxy(HVPE)was summarized and discussed.At last,the outlook of the production of AlN by HVPE was prospected.展开更多
A comparison of the nitrogen sources(N2 and NH3)influence on AlN films grown by high-temperature halide vapor phase epitaxy(HVPE)is reported.The x-ray rocking curves(XRCs)indicate that the full width at half maximum(F...A comparison of the nitrogen sources(N2 and NH3)influence on AlN films grown by high-temperature halide vapor phase epitaxy(HVPE)is reported.The x-ray rocking curves(XRCs)indicate that the full width at half maximum(FWHM)of(0002)plane for AlN films using N2 as nitrogen source is generally smaller than that using NH3.Optical microscope and atomic force microscope(AFM)results show that it is presently still more difficult to control the crack and surface morphology of AlN films with thicknesses of 5-10µm using N2 as the nitrogen source compared to that using NH3.Compared with one-step growth,two-step growth strategy has been proved more effective in stress control and reducing the density of threading dislocations for AlN epilayers using N2 as the nitrogen source.These investigations reveal that using N2 as nitrogen source in HVPE growth of AlN is immature at present,but exhibits great potential.展开更多
We report the growth of porous AlN films on C-face SiC substrates by hydride vapor phase epitaxy(HⅤPE).The influences of growth condition on surface morphology,residual strain and crystalline quality of Al N films ha...We report the growth of porous AlN films on C-face SiC substrates by hydride vapor phase epitaxy(HⅤPE).The influences of growth condition on surface morphology,residual strain and crystalline quality of Al N films have been investigated.With the increase of theⅤ/Ⅲratio,the growth mode of Al N grown on C-face 6H-SiC substrates changes from step-flow to pit-hole morphology.Atomic force microscopy(AFM),scanning electron microscopy(SEM)and Raman analysis show that cracks appear due to tensile stress in the films with the lowestⅤ/Ⅲratio and the highestⅤ/Ⅲratio with a thickness of about 3μm.In contrast,under the mediumⅤ/Ⅲratio growth condition,the porous film can be obtained.Even when the thickness of the porous Al N film is further increased to 8μm,the film remains porous and crack-free,and the crystal quality is improved.展开更多
A crack-free AlN film with 4.5 μm thickness was grown on a 2-inch hole-type nano-patterned sapphire substrates(NPSSs) by hydride vapor phase epitaxy(HVPE). The coalescence, stress evolution, and dislocation annihilat...A crack-free AlN film with 4.5 μm thickness was grown on a 2-inch hole-type nano-patterned sapphire substrates(NPSSs) by hydride vapor phase epitaxy(HVPE). The coalescence, stress evolution, and dislocation annihilation mechanisms in the AlN layer have been investigated. The large voids located on the pattern region were caused by the undesirable parasitic crystallites grown on the sidewalls of the nano-pattern in the early growth stage. The coalescence of the c-plane AlN was hindered by these three-fold crystallites and the special triangle void appeared. The cross-sectional Raman line scan was used to characterize the change of stress with film thickness, which corresponds to the characteristics of different growth stages of AlN. Threading dislocations(TDs) mainly originate from the boundary between misaligned crystallites and the c-plane AlN and the coalescence of two adjacent c-plane AlN crystals, rather than the interface between sapphire and AlN.展开更多
The preparation of porous structure on the molecular beam epitaxy （MBE）-grown mixed-polarity GaN epilayers was reported by using the wet chemical etching method. The effect of this porous structure on the residual s...The preparation of porous structure on the molecular beam epitaxy （MBE）-grown mixed-polarity GaN epilayers was reported by using the wet chemical etching method. The effect of this porous structure on the residual stress of subsequent-growth GaN epilayers was studied by Raman and photoluminescence （PL） spectrum. Substantial decrease in the biaxial stresse can be achieved by employing the porous buffers in the hydride vapour phase epitaxy （HVPE） epilayer growth.展开更多
Hydride vapor phase epitaxy （HVPE） is utilized to grow nonpolar a-plane GaN layers on r-plane sapphire templates prepared by metal organic vapor phase epitaxy （MOVPE）. The surface morphology and microstructures of...Hydride vapor phase epitaxy （HVPE） is utilized to grow nonpolar a-plane GaN layers on r-plane sapphire templates prepared by metal organic vapor phase epitaxy （MOVPE）. The surface morphology and microstructures of the samples are characterized by atomic force microscopy. The full width at half maximum （FWHM） of the HVPE sample shows a W-shape and that of the MOVPE sample shows an M-shape plane with the degree of 0 in the high-resolution x-ray diffraction （HRXRD） results. The surface morphology attributes to this significant anisotropic. HRXRD reveals that there is a significant reduction in the FWHM, both on-axis and off-axis for HVPE GaN are compared with the MOVPE template. The decrease of the FWHM of E2 （high） Raman scat tering spectra further indicates the improvement of crystal quality after HVPE. By comparing the results of secondary- ion-mass spectroscope and photoluminescence spectrum of the samples grown by HVPE and MOVPE, we propose that C-involved defects are originally responsible for the yellow luminescence.展开更多
A novel horizontal push-pull multi-substrate epitaxy boat with three separate cells is introduced in this article, with which multi-substrate LPE processing is feasible in horizontal LPE furnace. The processes of LPE ...A novel horizontal push-pull multi-substrate epitaxy boat with three separate cells is introduced in this article, with which multi-substrate LPE processing is feasible in horizontal LPE furnace. The processes of LPE AlxGa1-x)As/ GaAs solar cells are studied and the efficiency of the solar cells achieved 19.8% （AMO, 25℃, 120 mW/cm2）.展开更多
Thick GaN films were grown on the sapphire substrate by hydride vapour phase epitaxy. The properties of GaN films were found to be significantly influenced by the duration of exposing the sapphire substrate to ammonia...Thick GaN films were grown on the sapphire substrate by hydride vapour phase epitaxy. The properties of GaN films were found to be significantly influenced by the duration of exposing the sapphire substrate to ammonia prior to the GaN growth initiation. The crystalline quality of GaN films revealed by high resolution X-ray diffraction were strongly dependent on the nitridation time, which determined substrate surface topography. The different nitridation schemes strongly affected the morphology of GaN overlayers resulting in the blue shift of the main excitonic peak in photoluminescence spectra at room temperature.展开更多
Metal-organic framework(MOF) thin films are multilayer materials ranging from nanometers to micrometers in thickness,physically or chemically adhesive to a(functionalized) substrate and,in an ideal case,exhibiting low...Metal-organic framework(MOF) thin films are multilayer materials ranging from nanometers to micrometers in thickness,physically or chemically adhesive to a(functionalized) substrate and,in an ideal case,exhibiting low roughness and high homogeneity.Various innovative approaches have been developed for MOF thin film fabrication.Among these advanced materials,surface-attached metal-organic frameworks(SURMOFs) are an important class of MOF films.SURMOFs,fabricated in a step-by-step liquid phase epitaxial(LPE) fashion by alternating deposition of metal and organic linker precursors on a functionalized substrate,for example,thiolate-based self-assembled monolayers(SAMs),have already exhibited their utility in both research and potential applications.SURMOFs combine surface science and the chemistry of MOFs,possessing the following unique advantages that cannot be accessed through other methods:(i) precisely controlling thickness,roughness and homogeneity as well as growth orientation,(ii) studying of MOF growth mechanism,(iii) modifying/tailoring MOFs' structures during the SURMOF growth and thus creating customizable properties,and(iv) existing in the form of thin film/membrane for direct applications,for example,as sensors.This review discusses the oriented and crystalline SURMOFs fabricated by LPE approach,covering their preparation,growth mechanism,and characterization methodology as well as applications based upon the most newly updated knowledge.展开更多
AlGaN photoconductive ultraviolet detectors are fabricated to study their time response characteristics. Persistent photoconductivity, a deterring factor for the detector response time, is found to be strongly related...AlGaN photoconductive ultraviolet detectors are fabricated to study their time response characteristics. Persistent photoconductivity, a deterring factor for the detector response time, is found to be strongly related to the grain boundary density in AlGaN epilayers. By improving the crystal-nuclei coalescence process in metal organic vapor phase epitaxy, the grain-boundary density can be reduced, resulting in an-order-of-magnitude decrease in response time.展开更多
Single-crystalline transition metal dichalcogenides(TMD)films are of potential application in future electronics and optoelectronics.In this work,a halide vapor phase epitaxy(HVPE)strategy was proposed and demonstrate...Single-crystalline transition metal dichalcogenides(TMD)films are of potential application in future electronics and optoelectronics.In this work,a halide vapor phase epitaxy(HVPE)strategy was proposed and demonstrated for the epitaxy of molybdenum diselenide(MoSe_(2))single crystals,in which metal halide vapors were in-situ produced by the chlorination of molybdenum as sources for the TMD growth.Combined with the epitaxial sapphire substrate,unidirectional domain alignment was successfully achieved and monolayer single-crystal MoSe_(2) films have been demonstrated on a 2-inch wafer for the first time.A series of characterizations ranging from centimeter to nanometer scales have been implemented to demonstrate the high quality and uniformity of the MoSe_(2).This work provides a universal strategy for the growth of TMD single-crystal films.展开更多
Direct integration of high-mobility III-V compound semiconductors with existing Si-based complementary metal-oxide-semiconductor （CMOS） processing platforms presents the main challenge to increasing the CMOS perform...Direct integration of high-mobility III-V compound semiconductors with existing Si-based complementary metal-oxide-semiconductor （CMOS） processing platforms presents the main challenge to increasing the CMOS performance and the scaling trend. Silicon hetero-nanowires with integrated III-V segments are one of the most promising candidates for advanced nano-optoelectronics, as first demonstrated using molecular beam epitaxy techniques. Here we demonstrate a novel route for InAs/Si hybrid nanowire fabrication via millisecond range liquid-phase epitaxy regrowth using sequential ion beam implantation and flash-lamp annealing. We show that such highly mismatched systems can be monolithically integrated within a single nanowire. Optical and microstructural investigations confirm the high quality hetero-nanowire fabrication coupled with the formation of atomically sharp interfaces between Si and InAs segments. Such hybrid systems open new routes for future high-speed and multifunctional nanoelectronic devices on a single chip.展开更多
After a brief review on the progresses in GaN substrates by ammonothermal method and Na-flux method and hydride vapor phase epitaxy （HVPE） technology, our research results of growing GaN thick layer by a gas fow-rno...After a brief review on the progresses in GaN substrates by ammonothermal method and Na-flux method and hydride vapor phase epitaxy （HVPE） technology, our research results of growing GaN thick layer by a gas fow-rnodulated HVPE, removing the GaN layer through an efficient self-separation process from sapphire substrate, and modifying the uniformity of multiple wafer growth are presented. The effects of surface morphology and defect behaviors on the GaN homo-epitaxial growth on free standing substrate are also discussed, and followed by the advances of LEDs on GaN substrates and prospects of their applications in solid state lighting.展开更多
A modified liquid phase epitaxy apparatus for semiconductor materials was used to measure the solubility of GaAs in Bi.Two phase diagrams rich in Bi under H_2 and N_2 atmospheres were obtained according to the results...A modified liquid phase epitaxy apparatus for semiconductor materials was used to measure the solubility of GaAs in Bi.Two phase diagrams rich in Bi under H_2 and N_2 atmospheres were obtained according to the results of measurement.A new phenomenon,in which the parameter Q value(quantity of GaAs dissolved in Bi in fixed time/saturation quantitu,of GaAs in Bi)was different from each other at various temperatures and there existed a maxi- mum Q value at definite temperature,was observed.This phenomenon may be regarded as a common feature of a simple binary metallic system which has the phase diagram similar to that of Bi-GaAs.The difference observed from the dependence of Q values on temperature in both H_2 and N_2 atmospheres was discussed.展开更多
Aberration-corrected scanning transmission electron microscopy was employed to investigate the microstructures and secondary phases in LaBaCo2O5.5＋δ（LBCO） thin films grown on SrTiO3 （STO） substrates. The as-grow...Aberration-corrected scanning transmission electron microscopy was employed to investigate the microstructures and secondary phases in LaBaCo2O5.5＋δ（LBCO） thin films grown on SrTiO3 （STO） substrates. The as-grown films showed an epitaxial growth on the substrates with atomically sharp interfaces and orientation relationships of [100]LBCO//[100]STO and （001）LBCO//（001）STO. Secondary phases were observed in the films, which strongly depended on the sample fabrication conditions. In the film prepared at a temperature of 900 ℃, nano-scale CoO pillars nucleated on the substrate, and grew along the [001] direction of the film. In the film grown at a temperature of 1000 ℃, isolated nano-scale C0304 particles appeared, which promoted the growth of {111 } twinning structures in the film. The orientation relationships and the interfaces between the secondary phases and the films were illustrated, and the growth mechanism of the film was discussed.展开更多
The increasing emphasis on the sub\|micron CMOS/SOS devices has placed a demand for high quality thin silicon on sapphire (SOS) films with thickness of the order 100-200nm. It is demonstrated that the crystalline qua...The increasing emphasis on the sub\|micron CMOS/SOS devices has placed a demand for high quality thin silicon on sapphire (SOS) films with thickness of the order 100-200nm. It is demonstrated that the crystalline quality of as\|grown thin SOS films by chemically vapor deposition method can be greatly improved by solid phase epitaxy (SPE) process: implantation of self\|silicon ions and subsequent thermal annealing. Subsequent regrowth of this amorphous layer leads to a great improvement in silicon layer crystallinity and channel carrier mobility, respectively by double crystal X\|ray diffraction and electrical measurements. Thin SPE SOS films would have application to the high\|performance CMOS circuitry.展开更多
基金Project supported by the National Key Research and Development Program of China(Grant No.2016YFA0300801)the National Natural Science Foundation of China(Grant Nos.51702042,61734002,61571079,51572042,and 61471096)+1 种基金the International Science&Technology Cooperation Program of China(Grant No.2015DFR50870)the Sichuan Science and Technology Support Project,China(Grant Nos.2016GZ0250 and 2017JY0002)
文摘Liquid phase epitaxy （LPE） is a mature technology. Early experiments on single magnetic crystal films fabricated by LPE were focused mainly on thick films for microwave and magneto-optical devices. The LPE is an excellent way to make a thick film, low damping magnetic garnet film and high-quality magneto-optical material. Today, the principal challenge in the applied material is to create sub-micrometer devices by using modern photolithography technique. Until now the magnetic garnet films fabricated by LPE still show the best quality even on a nanoscale （about 100 nm）, which was considered to be impossible for LPE method.
基金provided by the National Natural Science Foundation of China (No. 60777022)the Program for Young Excellent Tal-ents in Tongji University
文摘InAsSb epilayers with a cutoff wavelength of 4.8 μm have been successfully grown on InAs substrates by one-step liquid phase epitaxy （LPE） technology. The epilayers were characterized by X-ray diffraction （XRD）, Fourier transform infrared （PTIR） transmittance measurements and scanning electron microscopy （SEM）. The influence of different growth conditions on the optical and structural properties of the materials was studied. The results revealed that the good crystalline quality, mirror smooth surface and flat interface of InAsSb epilayers were achieved. They benefited from optimized growth conditions, i.e., sufficient homogeneity of the growth melt and a very slow cooling rate.
基金Supported by the National Key Research and Development Program of China under Grant No 2017YFB0404201the Solid State Lighting and Energy-Saving Electronics Collaborative Innovation Center,PAPDthe State Grid Shandong Electric Power Company
文摘Two-inch Ga_2O_3 films with（ˉ201）-orientation are grown on c-sapphire at 850–1050°C by hydride vapor phase epitaxy. High-resolution x-ray diffraction shows that pure β-Ga_2O_3 with a smooth surface has a higher crystal quality, and the Raman spectra reveal a very small residual strain in β-Ga_2O_3 grown by hydride vapor phase epitaxy compared with bulk single crystal. The optical transmittance is higher than 80% in the visible and near-UV regions, and the optical bandgap energy is calculated to be 4.9 e V.
基金Project supported by the National Basic Research Program of China (Grant No.2007CB307004)the National High Technology Research and Development Program of China (Grant No.2009AA03A198)+1 种基金the National Natural Science Foundation of China (Grant Nos.60776041 61076012,60876063,and 60676032)the Science and Technology Fund of Beijing,China (Grant No.Z101103050410003)
文摘Two strain-state samples of GaN, labelled the strain-relief sample and the quality-improved sample, were grown by hydride vapour phase epitaxy （HVPE）, and then characterized by high-resolution X-ray diffraction, photoluminescence and optical microscopy. Two strain states of GaN in HVPE, like 3D and 2[） growth modes in metal-organic chemical vapour deposition （MOCVD）, provide an effective way to solve the heteroepitaxial problems of both strain relief and quality improvement. The gradual variation metbod （GVM）, developed based on the two strain states, is characterized by growth parameters＇ gradual variation alternating between the strain-relief growth conditions and the quality-improved growth conditions. In GVM, the introduction of the strain-relief amplitude, which is defined by the range from the quality-improved growth conditions to the strain-relief growth conditions, makes the strain-relief control concise and effective. The 300-μm thick bright and crack-free GaN film grown on a two-inch sapphire proves the effectiveness of GVM.
基金partly supported by Beijing Municipal Natural Science Foundation (No. 4182046)the National Natural Science Foundation of China (No. 61874007)+3 种基金the Fundamental Research Funds for the Central Universities (Nos. buctrc201802, buctrc201830)the Funding for Bagui Talent of Guangxi province (Nos. T31200992001 and T3120097921)ASEAN Young Talented Scientist Program (No. Y312001913)Talent Model Base, China (No. AE31200065)
文摘Aluminum nitride(AlN)is the promising substrates material for the epitaxial growth ofⅢ-nitrides devices,such as high-power,high-frequency electronic,deep ultraviolet optoelectronics and acoustic devices.However,it is rather difficult to obtain the high quality and crack-free thick AlN wafers because of the low surface migration of Al adatoms and the large thermal and lattice mismatches between the foreign substrates and AlN.In this work,the fabrication of AlN material by hydride vapor phase epitaxy(HVPE)was summarized and discussed.At last,the outlook of the production of AlN by HVPE was prospected.
基金Project supported by the National Key R&D Program of China(Grant No.2017YFB0404100)。
文摘A comparison of the nitrogen sources(N2 and NH3)influence on AlN films grown by high-temperature halide vapor phase epitaxy(HVPE)is reported.The x-ray rocking curves(XRCs)indicate that the full width at half maximum(FWHM)of(0002)plane for AlN films using N2 as nitrogen source is generally smaller than that using NH3.Optical microscope and atomic force microscope(AFM)results show that it is presently still more difficult to control the crack and surface morphology of AlN films with thicknesses of 5-10µm using N2 as the nitrogen source compared to that using NH3.Compared with one-step growth,two-step growth strategy has been proved more effective in stress control and reducing the density of threading dislocations for AlN epilayers using N2 as the nitrogen source.These investigations reveal that using N2 as nitrogen source in HVPE growth of AlN is immature at present,but exhibits great potential.
文摘We report the growth of porous AlN films on C-face SiC substrates by hydride vapor phase epitaxy(HⅤPE).The influences of growth condition on surface morphology,residual strain and crystalline quality of Al N films have been investigated.With the increase of theⅤ/Ⅲratio,the growth mode of Al N grown on C-face 6H-SiC substrates changes from step-flow to pit-hole morphology.Atomic force microscopy(AFM),scanning electron microscopy(SEM)and Raman analysis show that cracks appear due to tensile stress in the films with the lowestⅤ/Ⅲratio and the highestⅤ/Ⅲratio with a thickness of about 3μm.In contrast,under the mediumⅤ/Ⅲratio growth condition,the porous film can be obtained.Even when the thickness of the porous Al N film is further increased to 8μm,the film remains porous and crack-free,and the crystal quality is improved.
基金supported by the National Natural Science Foundation of China (Grant No. 61974158)the Natural Science Fund of Jiangsu Province, China (Grant No. BK20191456)。
文摘A crack-free AlN film with 4.5 μm thickness was grown on a 2-inch hole-type nano-patterned sapphire substrates(NPSSs) by hydride vapor phase epitaxy(HVPE). The coalescence, stress evolution, and dislocation annihilation mechanisms in the AlN layer have been investigated. The large voids located on the pattern region were caused by the undesirable parasitic crystallites grown on the sidewalls of the nano-pattern in the early growth stage. The coalescence of the c-plane AlN was hindered by these three-fold crystallites and the special triangle void appeared. The cross-sectional Raman line scan was used to characterize the change of stress with film thickness, which corresponds to the characteristics of different growth stages of AlN. Threading dislocations(TDs) mainly originate from the boundary between misaligned crystallites and the c-plane AlN and the coalescence of two adjacent c-plane AlN crystals, rather than the interface between sapphire and AlN.
基金supported by the National Natural Science Foundation of China under grant No.10574130.
文摘The preparation of porous structure on the molecular beam epitaxy （MBE）-grown mixed-polarity GaN epilayers was reported by using the wet chemical etching method. The effect of this porous structure on the residual stress of subsequent-growth GaN epilayers was studied by Raman and photoluminescence （PL） spectrum. Substantial decrease in the biaxial stresse can be achieved by employing the porous buffers in the hydride vapour phase epitaxy （HVPE） epilayer growth.
基金Supported by the National Natural Science Foundation of China under Grant No 61204006the Fundamental Research Funds for the Central Universities under Grant No 7214570101the National Key Science and Technology Special Project under Grant No 2008ZX01002-002
文摘Hydride vapor phase epitaxy （HVPE） is utilized to grow nonpolar a-plane GaN layers on r-plane sapphire templates prepared by metal organic vapor phase epitaxy （MOVPE）. The surface morphology and microstructures of the samples are characterized by atomic force microscopy. The full width at half maximum （FWHM） of the HVPE sample shows a W-shape and that of the MOVPE sample shows an M-shape plane with the degree of 0 in the high-resolution x-ray diffraction （HRXRD） results. The surface morphology attributes to this significant anisotropic. HRXRD reveals that there is a significant reduction in the FWHM, both on-axis and off-axis for HVPE GaN are compared with the MOVPE template. The decrease of the FWHM of E2 （high） Raman scat tering spectra further indicates the improvement of crystal quality after HVPE. By comparing the results of secondary- ion-mass spectroscope and photoluminescence spectrum of the samples grown by HVPE and MOVPE, we propose that C-involved defects are originally responsible for the yellow luminescence.
文摘A novel horizontal push-pull multi-substrate epitaxy boat with three separate cells is introduced in this article, with which multi-substrate LPE processing is feasible in horizontal LPE furnace. The processes of LPE AlxGa1-x)As/ GaAs solar cells are studied and the efficiency of the solar cells achieved 19.8% （AMO, 25℃, 120 mW/cm2）.
基金National"863"Project of China (2001AA311100 and 2002AA305304) Sino French Cooperation Project:CNRS/ASC Chine 2003 Project(14915)
文摘Thick GaN films were grown on the sapphire substrate by hydride vapour phase epitaxy. The properties of GaN films were found to be significantly influenced by the duration of exposing the sapphire substrate to ammonia prior to the GaN growth initiation. The crystalline quality of GaN films revealed by high resolution X-ray diffraction were strongly dependent on the nitridation time, which determined substrate surface topography. The different nitridation schemes strongly affected the morphology of GaN overlayers resulting in the blue shift of the main excitonic peak in photoluminescence spectra at room temperature.
基金the European Union for funding the research projects on MOF thin films (Priority Program 1362 of the DFG)SUR-MOFs(6th FP, NMP4-CT-2006-032109)
文摘Metal-organic framework(MOF) thin films are multilayer materials ranging from nanometers to micrometers in thickness,physically or chemically adhesive to a(functionalized) substrate and,in an ideal case,exhibiting low roughness and high homogeneity.Various innovative approaches have been developed for MOF thin film fabrication.Among these advanced materials,surface-attached metal-organic frameworks(SURMOFs) are an important class of MOF films.SURMOFs,fabricated in a step-by-step liquid phase epitaxial(LPE) fashion by alternating deposition of metal and organic linker precursors on a functionalized substrate,for example,thiolate-based self-assembled monolayers(SAMs),have already exhibited their utility in both research and potential applications.SURMOFs combine surface science and the chemistry of MOFs,possessing the following unique advantages that cannot be accessed through other methods:(i) precisely controlling thickness,roughness and homogeneity as well as growth orientation,(ii) studying of MOF growth mechanism,(iii) modifying/tailoring MOFs' structures during the SURMOF growth and thus creating customizable properties,and(iv) existing in the form of thin film/membrane for direct applications,for example,as sensors.This review discusses the oriented and crystalline SURMOFs fabricated by LPE approach,covering their preparation,growth mechanism,and characterization methodology as well as applications based upon the most newly updated knowledge.
基金Project supported by the National Natural Science Foundation of China(Nos.60723002,50706022,60977022,51002085)the National Basic Research Project of China(Nos.2006CB302800,2006CB921106 2011CB301902,2011CB301903)+2 种基金the High Technology Research and Development Program of China(Nos.2007AA05Z429,2008AA03A194)the Beijing Natural Science Foundation(No.4091001)the Industry,Academia and Research Combining and Public Science and Technology Special Program of Shenzhen,China(No.08CXY-14)
文摘AlGaN photoconductive ultraviolet detectors are fabricated to study their time response characteristics. Persistent photoconductivity, a deterring factor for the detector response time, is found to be strongly related to the grain boundary density in AlGaN epilayers. By improving the crystal-nuclei coalescence process in metal organic vapor phase epitaxy, the grain-boundary density can be reduced, resulting in an-order-of-magnitude decrease in response time.
基金This work was supported by the National Key R&D Program of China(2022YFB4400100 and 2021YFA0715600)the Leading-edge Technology Program of Jiangsu Natural Science Foundation(BK20202005)+4 种基金the National Natural Science Foundation of China(T2221003,61927808,61734003,61861166001,and 62204113)the Natural Science Foundation of Jiangsu Province(BK20220773)the Strategic Priority Research Program of Chinese Academy of Sciences(XDB30000000)Key Laboratory of Advanced Photonic and Electronic Materials,Collaborative Innovation Center of Solid-State Lighting and Energy-Saving Electronicsthe Fundamental Research Funds for the Central Universities,China.
文摘Single-crystalline transition metal dichalcogenides(TMD)films are of potential application in future electronics and optoelectronics.In this work,a halide vapor phase epitaxy(HVPE)strategy was proposed and demonstrated for the epitaxy of molybdenum diselenide(MoSe_(2))single crystals,in which metal halide vapors were in-situ produced by the chlorination of molybdenum as sources for the TMD growth.Combined with the epitaxial sapphire substrate,unidirectional domain alignment was successfully achieved and monolayer single-crystal MoSe_(2) films have been demonstrated on a 2-inch wafer for the first time.A series of characterizations ranging from centimeter to nanometer scales have been implemented to demonstrate the high quality and uniformity of the MoSe_(2).This work provides a universal strategy for the growth of TMD single-crystal films.
文摘Direct integration of high-mobility III-V compound semiconductors with existing Si-based complementary metal-oxide-semiconductor （CMOS） processing platforms presents the main challenge to increasing the CMOS performance and the scaling trend. Silicon hetero-nanowires with integrated III-V segments are one of the most promising candidates for advanced nano-optoelectronics, as first demonstrated using molecular beam epitaxy techniques. Here we demonstrate a novel route for InAs/Si hybrid nanowire fabrication via millisecond range liquid-phase epitaxy regrowth using sequential ion beam implantation and flash-lamp annealing. We show that such highly mismatched systems can be monolithically integrated within a single nanowire. Optical and microstructural investigations confirm the high quality hetero-nanowire fabrication coupled with the formation of atomically sharp interfaces between Si and InAs segments. Such hybrid systems open new routes for future high-speed and multifunctional nanoelectronic devices on a single chip.
基金Project supported by the National High Technology Research and Development Program of China(Grant No.2014AA032605)the National Key Basic Research and Development Program of China(Grant Nos.2012CB619304 and 2011CB301904)the National Natural Science Foundation of China(Grant Nos.61376012,61474003,and 61327801)
文摘After a brief review on the progresses in GaN substrates by ammonothermal method and Na-flux method and hydride vapor phase epitaxy （HVPE） technology, our research results of growing GaN thick layer by a gas fow-rnodulated HVPE, removing the GaN layer through an efficient self-separation process from sapphire substrate, and modifying the uniformity of multiple wafer growth are presented. The effects of surface morphology and defect behaviors on the GaN homo-epitaxial growth on free standing substrate are also discussed, and followed by the advances of LEDs on GaN substrates and prospects of their applications in solid state lighting.
文摘A modified liquid phase epitaxy apparatus for semiconductor materials was used to measure the solubility of GaAs in Bi.Two phase diagrams rich in Bi under H_2 and N_2 atmospheres were obtained according to the results of measurement.A new phenomenon,in which the parameter Q value(quantity of GaAs dissolved in Bi in fixed time/saturation quantitu,of GaAs in Bi)was different from each other at various temperatures and there existed a maxi- mum Q value at definite temperature,was observed.This phenomenon may be regarded as a common feature of a simple binary metallic system which has the phase diagram similar to that of Bi-GaAs.The difference observed from the dependence of Q values on temperature in both H_2 and N_2 atmospheres was discussed.
基金financially supported by the National Natural Science Foundation of China (Nos. 51501143, 51202185 and 51390472)the National Basic Research Program of China (No. 2015CB654903)Fundamental Research Funds for the Central Universities, China Postdoctoral Science Foundation (No. 2015M572554)
文摘Aberration-corrected scanning transmission electron microscopy was employed to investigate the microstructures and secondary phases in LaBaCo2O5.5＋δ（LBCO） thin films grown on SrTiO3 （STO） substrates. The as-grown films showed an epitaxial growth on the substrates with atomically sharp interfaces and orientation relationships of [100]LBCO//[100]STO and （001）LBCO//（001）STO. Secondary phases were observed in the films, which strongly depended on the sample fabrication conditions. In the film prepared at a temperature of 900 ℃, nano-scale CoO pillars nucleated on the substrate, and grew along the [001] direction of the film. In the film grown at a temperature of 1000 ℃, isolated nano-scale C0304 particles appeared, which promoted the growth of {111 } twinning structures in the film. The orientation relationships and the interfaces between the secondary phases and the films were illustrated, and the growth mechanism of the film was discussed.
文摘The increasing emphasis on the sub\|micron CMOS/SOS devices has placed a demand for high quality thin silicon on sapphire (SOS) films with thickness of the order 100-200nm. It is demonstrated that the crystalline quality of as\|grown thin SOS films by chemically vapor deposition method can be greatly improved by solid phase epitaxy (SPE) process: implantation of self\|silicon ions and subsequent thermal annealing. Subsequent regrowth of this amorphous layer leads to a great improvement in silicon layer crystallinity and channel carrier mobility, respectively by double crystal X\|ray diffraction and electrical measurements. Thin SPE SOS films would have application to the high\|performance CMOS circuitry.
