Constructing a photoconductive semiconductor switch (PCSS)-metal coil structure, we discovered anew phenomenon of electromagnetic oscillation in vanadium-compensation semi-insulating (VCSI) PCSS. Here thePCSS responds...Constructing a photoconductive semiconductor switch (PCSS)-metal coil structure, we discovered anew phenomenon of electromagnetic oscillation in vanadium-compensation semi-insulating (VCSI) PCSS. Here thePCSS responds to laser pulse and high-voltage signal while the metal coil generates an oscillating voltage pulseenvelope signal. The generation of this oscillating signal is not related to the input bias voltage of the PCSS, the pulsecircuit components, or the electrode structure of the PCSS, rather it is related to the output characteristic of the PCSS.This physical phenomenon can be explained using the current surge model in photoconducting antenna. Preparingohmic contact electrode on the silicon carbide material forms the PCSS, which generates a large number ofphotogenerated carriers when ultra-fast laser pulses irradiate the surface of the material and Simultaneously applies abias voltage signal between the electrode. At this time inside the PCSS the electric field causes the transient current,radiating electromagnetic wave to the metal coil to generate oscillating signal.展开更多
To guide the illuminating design to improve the on-state performances of gallium arsenide(GaAs)photoconductive semiconductor switch(PCSS),the effect of spot size on the operation mode of GaAsPCSS based on a semi-insul...To guide the illuminating design to improve the on-state performances of gallium arsenide(GaAs)photoconductive semiconductor switch(PCSS),the effect of spot size on the operation mode of GaAsPCSS based on a semi-insulating wafer with a thickness of 1 mm,triggered by a 1064-nm extrinsic laser beam with the rectangular spot,has been investigated experimentally.It is found that the variation of the spot size in length and width can act on the different parts of the output waveform integrating the characteristics of the linear and nonlinear modes,and then significantly boosts the PCSS toward different operation modes.On this basis,a two-channel model containing the active and passive parts is introduced to interpret the relevant influencing mechanisms.Results indicate that the increased spot length can peak the amplitude of static domains in the active part to enhance the development of the nonlinear switching,while the extended spot width can change the distribution of photogenerated carriers on both parts to facilitate the linear switching and weaken the nonlinear switching,which have been proved by comparing the domain evolutions under different spot sizes.展开更多
基金supported by Major Projects of Shanxi Province (202101030201001)。
文摘Constructing a photoconductive semiconductor switch (PCSS)-metal coil structure, we discovered anew phenomenon of electromagnetic oscillation in vanadium-compensation semi-insulating (VCSI) PCSS. Here thePCSS responds to laser pulse and high-voltage signal while the metal coil generates an oscillating voltage pulseenvelope signal. The generation of this oscillating signal is not related to the input bias voltage of the PCSS, the pulsecircuit components, or the electrode structure of the PCSS, rather it is related to the output characteristic of the PCSS.This physical phenomenon can be explained using the current surge model in photoconducting antenna. Preparingohmic contact electrode on the silicon carbide material forms the PCSS, which generates a large number ofphotogenerated carriers when ultra-fast laser pulses irradiate the surface of the material and Simultaneously applies abias voltage signal between the electrode. At this time inside the PCSS the electric field causes the transient current,radiating electromagnetic wave to the metal coil to generate oscillating signal.
基金supported in part by the Huxiang Youth Talent Support Program(No.2020RC3030)in part by the Foundation of State Key Laboratory of Pulsed Power Laser Technology(Nos.SKL2021ZR02 and SKL2021KF05)。
文摘To guide the illuminating design to improve the on-state performances of gallium arsenide(GaAs)photoconductive semiconductor switch(PCSS),the effect of spot size on the operation mode of GaAsPCSS based on a semi-insulating wafer with a thickness of 1 mm,triggered by a 1064-nm extrinsic laser beam with the rectangular spot,has been investigated experimentally.It is found that the variation of the spot size in length and width can act on the different parts of the output waveform integrating the characteristics of the linear and nonlinear modes,and then significantly boosts the PCSS toward different operation modes.On this basis,a two-channel model containing the active and passive parts is introduced to interpret the relevant influencing mechanisms.Results indicate that the increased spot length can peak the amplitude of static domains in the active part to enhance the development of the nonlinear switching,while the extended spot width can change the distribution of photogenerated carriers on both parts to facilitate the linear switching and weaken the nonlinear switching,which have been proved by comparing the domain evolutions under different spot sizes.
