Thin films of perovskite manganese oxide Lao.66Ca0.29K0.05MnO3（LCKMO） on Au/ITO（ITO=indium tin oxide） substrates were prepared by off-axis radio frequency magnetron sputtering and characterized by X-ray diffrac- t...Thin films of perovskite manganese oxide Lao.66Ca0.29K0.05MnO3（LCKMO） on Au/ITO（ITO=indium tin oxide） substrates were prepared by off-axis radio frequency magnetron sputtering and characterized by X-ray diffrac- tion（XRD）, high-resolution transmission electron microscopy（HRTEM）, and conductive atomic force microscopy （C-AFM） at room temperature. The thin films with thickness ranged from 100 nm to 300 nm basically show cubic structures with a=0.3886 nm, the same as that of the raw material used, but the structures are highly modulated. C-AFM results revealed that the atomic scale p-n junction feature of the thin films was the same as that of the single crystals. The preparation of the thin films thus further confirms the possibility of their application extending from micrometer-sized single crystals to macroscopic thin film.展开更多
Mitochondrial dysfunction and oxidative stress are widely regarded as primary drivers of aging and are associated with several neurodegenerative diseases.The degeneration of motor neurons during aging is a critical pa...Mitochondrial dysfunction and oxidative stress are widely regarded as primary drivers of aging and are associated with several neurodegenerative diseases.The degeneration of motor neurons during aging is a critical pathological factor contributing to the progression of sarcopenia.However,the morphological and functional changes in mitochondria and their interplay in the degeneration of the neuromuscular junction during aging remain poorly understood.A defined systematic search of the Pub Med,Web of Science and Embase databases(last accessed on October 30,2024)was conducted with search terms including'mitochondria','aging'and'NMJ'.Clinical and preclinical studies of mitochondrial dysfunction and neuromuscular junction degeneration during aging.Twentyseven studies were included in this systematic review.This systematic review provides a summary of morphological,functional and biological changes in neuromuscular junction,mitochondrial morphology,biosynthesis,respiratory chain function,and mitophagy during aging.We focus on the interactions and mechanisms underlying the relationship between mitochondria and neuromuscular junctions during aging.Aging is characterized by significant reductions in mitochondrial fusion/fission cycles,biosynthesis,and mitochondrial quality control,which may lead to neuromuscular junction dysfunction,denervation and poor physical performance.Motor nerve terminals that exhibit redox sensitivity are among the first to exhibit abnormalities,ultimately leading to an early decline in muscle strength through impaired neuromuscular junction transmission function.Parg coactivator 1 alpha is a crucial molecule that regulates mitochondrial biogenesis and modulates various pathways,including the mitochondrial respiratory chain,energy deficiency,oxidative stress,and inflammation.Mitochondrial dysfunction is correlated with neuromuscular junction denervation and acetylcholine receptor fragmentation,resulting in muscle atrophy and a decrease in strength during aging.Physical therapy,pharmacotherapy,and gene therapy can alleviate the structural degeneration and functional deterioration of neuromuscular junction by restoring mitochondrial function.Therefore,mitochondria are considered potential targets for preserving neuromuscular junction morphology and function during aging to treat sarcopenia.展开更多
Control over charge transport in molecular–scale devices requires a deep understanding of how minute structural changes influence electronic properties.Here,we demonstrate dual transport regimes in tunnel junctions o...Control over charge transport in molecular–scale devices requires a deep understanding of how minute structural changes influence electronic properties.Here,we demonstrate dual transport regimes in tunnel junctions of n-alk-1-yne(CnA)molecules with gold electrodes driven by conformational bifurcation—the emergence of two nearly isoenergetic(planar and skewed)molecular conformers(dihedral anglesα=180°andα≈65°at the alkyne terminus in the gas phase).Although the energy differences are small,these subtle conformational differences manifest as distinct transport behaviors,uncovered through unsupervised machine learning,which identified two junction groups:“short”and“long”chains,with distinct attenuation factors(β_(short)≈1.0 vs.β_(long)≈0.74)and contact conductances(G_(c,short)≈200μS vs.G_(c,long)≈8μS).This dramatic impact of the dihedral angle exceeds the impact of the inter-ring twist angle in biphenyl-based junctions and rivals changes induced by switching from gold to platinum electrodes or from monothiol to dithiol anchors in oligoacene and oligophenylene junctions.X-ray photoelectron spectroscopy(XPS)confirmed this bifurcation,linking the“short”and“long”groups to planar and skewed conformers,with dihedrals remarkably agreeing with the gas-phase values.This work establishes conformational bifurcation as a promising route for designing programmable nanotransport properties through anchor-group control.展开更多
Two-dimensional single-crystalline p-n junctions of organic semiconductors(pn-2 DCOSs) show great potential in organic logic circuits due to their single crystal nature and excellent ambipolar charge transport. Howeve...Two-dimensional single-crystalline p-n junctions of organic semiconductors(pn-2 DCOSs) show great potential in organic logic circuits due to their single crystal nature and excellent ambipolar charge transport. However,there are only few reports on pn-2 DCOSs because it is difficult to obtain such highly ordered structure in p-n junction.Herein, a novel and effective solution processing method of secondary transfer technology based on the facile drop casting is used to fabricate devices of pn-2 DCOSs based on C8-BTBT(p-type) and TFT-CN(n-type) successfully. The high-performance ambipolar field transistors based on such ultrathin pn-2 DCOSs with several molecular layers thickness show wellbalanced ambipolar charge transport behaviors with hole mobility as high as 0.43 cm^2 V^-1 s^-1 and electron mobility up to 0.11 cm^2 V^-1 s(^-1), respectively. This work is essential for studying the intrinsic properties of organic p-n junctions and achieving high performance in organic complementary circuits.展开更多
Two-dimensional （2D） materials have attracted substantial attention in electronic and optoelectronic applications with the superior advantages of being flexible, transparent, and highly tunable. Gapless graphene exh...Two-dimensional （2D） materials have attracted substantial attention in electronic and optoelectronic applications with the superior advantages of being flexible, transparent, and highly tunable. Gapless graphene exhibits ultra-broadband and fast photoresponse while the 2D semiconducting MoS2 and GaTe exhibit high sensitivity and tunable responsivity to visible light. However, the device yield and repeatability call for further improvement to achieve large-scale uniformity. Here, we report a layer-by-layer growth of wafer-scale GaTe with a high hole mobility of 28.4 cm^2/（V.s） by molecular beam epitaxy. The arrayed p-n ）unctions were developed by growing few-layer GaTe directly on fhree-inch Si wafers. The resultant diodes reveal good rectifying characteristics and a high photovoltaic external quantum efficiency up to 62% at 4.8 μW under zero bias. The photocurrent reaches saturation fast enough to capture a time constant of 22 μs and shows no sign of device degradation after 1.37 million cycles of operation. Most strikingly, such high performance has been achieved across the entire wafer, making the volume production of devices accessible. Finally, several photoimages were acquired by the GaTe/Si photodiodes with reasonable contrast and spatial resolution, demonstrating the potential of integrating the 2D materials with silicon technology for novel optoelectronic devices.展开更多
The emulation of biological synapses with learning and memory functions and versatile plasticity is significantly promising for neuromorphic computing systems.Here,a robust and continuously adjustable mechanoplastic s...The emulation of biological synapses with learning and memory functions and versatile plasticity is significantly promising for neuromorphic computing systems.Here,a robust and continuously adjustable mechanoplastic semifloating-gate transistor is demonstrated based on an integrated graphene/hexagonal boron nitride/tungsten diselenide van der Waals heterostructure and a triboelectric nanogenerator(TENG).The working states(p-n junction or n;-n junction)can be manipulated and switched under the sophisticated modulation of triboelectric potential derived from mechanical actions,which is attributed to carriers trapping and detrapping in the graphene layer.Furthermore,a reconfigurable artificial synapse is constructed based on such mechanoplastic transistor that can simulate typical synaptic plasticity and implement dynamic control correlations in each response mode by further designing the amplitude and duration.The artificial synapse can work with ultra-low energy consumption at 74.2 f J per synaptic event and the extended synaptic weights.Under the synergetic effect of the semifloating gate,the synaptic device can enable successive mechanical facilitation/depression,short-/long-term plasticity and learning-experience behavior,exhibiting the mechanical behavior derived synaptic plasticity.Such reconfigurable and mechanoplastic features provide an insight into the applications of energyefficient and real-time interactive neuromodulation in the future artificial intelligent system beyond von Neumann architecture.展开更多
Zinc oxide(ZnO),as a broadband gap semiconductor material,exhibits unique physical and chemical properties that make it highly suitable for optoelectronics,piezoelectric devices,and gas-sensitive sensors,showing signi...Zinc oxide(ZnO),as a broadband gap semiconductor material,exhibits unique physical and chemical properties that make it highly suitable for optoelectronics,piezoelectric devices,and gas-sensitive sensors,showing significant potential for various applications.This paper focuses on the regulation and application of ZnO-based p-n junctions and piezoelectric devices.It discusses in detail the preparation of ZnO materials,the construction of p-n junctions,the optimization of piezoelectric device performance,and its application in various fields.By employing different preparation methods and strategies,high-quality ZnO thin films can be grown,and effective control of p-type conductivity achieved.This study provides both a theoretical foundation and technical support for controlling the performance of ZnO-based piezoelectric devices,as well as paving new pathways for the broader application of ZnO materials.展开更多
The p-n junction is the foundation building structure for manufacturing various electronic and optoelec-tronic devices.Ultrawide bandgap semiconductors are expected to overcome the limited power capability of Si-based...The p-n junction is the foundation building structure for manufacturing various electronic and optoelec-tronic devices.Ultrawide bandgap semiconductors are expected to overcome the limited power capability of Si-based electronic device,however,it is very difficult to achieve efficient bipolar doping due to the asymmetric doping effect,thereby impeding the development of p-n homojunction and related bipolar devices,especially for the Ga_(2)O_(3)-based materials and devices.Here,we demonstrate a unique one-step integrated growth of p-type N-doped(201)β-Ga_(2)O_(3)/n-type Si-doped(¯201)β-Ga_(2)O_(3)films by phase tran-sition and in-situ pre-doping of dopants,and fabrication of fullβ-Ga_(2)O_(3)linearly-graded p-n homojunc-tion diode from them.The fullβ-Ga_(2)O_(3)p-n homojunction diode possesses a large built-in potential of 4.52 eV,a high operation electric field>2.90 MV/cm in the reverse-bias regime,good longtime-stable rectifying behaviors with a rectification ratio of 104,and a high-speed switching and good surge robust-ness with a weak minority-carrier charge storage.Our work opens the way to the fabrication of Ga_(2)O_(3)-based p-n homojunction,lays the foundation for fullβ-Ga_(2)O_(3)-based bipolar devices,and paves the way for the novel fabrication of p-n homojunction for wide-bandgap oxides.展开更多
The sluggish kinetics of the oxygen reduction reaction(ORR)and high over potential of oxygen evolution reaction(OER)are big challenges in the development of high-performance zinc-air batteries(ZABs)and fuel cells.In t...The sluggish kinetics of the oxygen reduction reaction(ORR)and high over potential of oxygen evolution reaction(OER)are big challenges in the development of high-performance zinc-air batteries(ZABs)and fuel cells.In this work,we report a rational design and a simple fabrication strategy of a photo-enhanced Co single-atom catalyst(SAC)comprising g-C3N4 coupled with cobalt-nitrogen-doped hierarchical mesoporous carbon(Co-N/MPC),forming a staggered p-n heterojunction that effectively improves charge separation and enhances electrocatalytic activity.The incorporation of Co SACs and g-C3N4 synergistically optimizes the photogenerated electron-hole pair separation,significantly boosting the intrinsic ORR-OER duplex activity.Under illumination,g-C_(3)N_(4)@Co-N/MPC exhibits an outstanding ORR half-wave potential(E1/2)of 0.841 V(vs.RHE)in 0.1 mol L^(–1)KOH and a low OER overpotential of 497.4 mV(vs.RHE)at 10 mA cm^(–2)in 1 mol L^(–1)KOH.Notably,the catalyst achieves an exceptional peak power density of 850.7 mW cm^(–2)in ZABs and of 411 mW cm^(–2)even in H_(2)-air fuel cell.In addition,g-C_(3)N_(4)@Co-N/MPC-based ZABs also show remarkable cycling stability exceeding 250 h.The advanced photo-induced charge separation at the p-n heterojunction facilitates faster electron transfer kinetics,and the mass transport owing to hierarchical mesoporous structure of Co-N-C,thereby reducing the overpotential and enhancing the overall energy conversion efficiency.This work provides a new perspective on designing next-generation of single-atom dispersed oxygen reaction catalysts,paving the way for high-performance photo-enhanced energy storage and conversion systems.展开更多
Multiferroic tunnel junctions(MFTJs),which combine tunneling magnetoresistance(TMR)and electroresistance(TER)efects,have emerged as key candidates for data storage.Two-dimensional van der Waals(vdW)MFTJs,in particular...Multiferroic tunnel junctions(MFTJs),which combine tunneling magnetoresistance(TMR)and electroresistance(TER)efects,have emerged as key candidates for data storage.Two-dimensional van der Waals(vdW)MFTJs,in particular,are promising spintronic devices for the post-Moore era.However,these vdW MFTJs are typically based on multiferroics composed of ferromagnetic and ferroelectric materials or multilayer magnetic materials with sliding ferroelectricity,which increases device fabrication complexity.In this work,we design a vdW MFTJ using bilayer MoPtGe_(2)S_(6),a material with homologous multiferroicity in each monolayer,combined with symmetric PtTe_(2)electrodes.Using frst-principles calculations based on density functional theory and nonequilibrium Green's functions,we theoretically explore the spin-polarized electronic transport properties of this MFTJ.By controlling the ferroelectric and ferromagnetic polarization directions of bilayer MoPtGe_(2)S_(6),the MFTJ can exhibit six distinct non-volatile resistance states,with maximum TMR(137%)and TER(1943%)ratios.Under biaxial strain,TMR and TER can increase to 265%and 4210%,respectively.The TER ratio also increases to 2186%under a 0.1 V bias voltage.Remarkably,the MFTJ exhibits a pronounced spin-fltering and a signifcant negative diferential resistance efect.These fndings not only highlight the potential of monolayer multiferroic MoPtGe_(2)S_(6)for MFTJs but also ofer valuable theoretical insights for future experimental investigations.展开更多
We experimentally demonstrate a silicon photonic modulator that can be loaded with a combination of lateral and interleaved p-n junctions to enhance its phase modulation.We use an asymmetric Bragg grating to introduce...We experimentally demonstrate a silicon photonic modulator that can be loaded with a combination of lateral and interleaved p-n junctions to enhance its phase modulation.We use an asymmetric Bragg grating to introduce mode conversion in the active area,allowing the modulator to operate in reflection without introducing additional on-chip loss.With a compact footprint(phase shifter length of 290μm),the modulator demonstrates a modulation speed up to 45 Gb/s with a bit error rate below the 7% forward-error-correction(FEC)threshold(up to 55 Gb/s with 20% FEC),and a low power consumption of 226 fJ/bit.展开更多
We have successfully fabricated the colossal magnetoresistive (CMR) p-n junctions of perovskite oxide La0.9Sr0.1MnO3/SrNb0.01Ti0.99O3 (LSMO/SNTO) with laser molecular beam epitaxy. The I-V characteristics of the LSMO/...We have successfully fabricated the colossal magnetoresistive (CMR) p-n junctions of perovskite oxide La0.9Sr0.1MnO3/SrNb0.01Ti0.99O3 (LSMO/SNTO) with laser molecular beam epitaxy. The I-V characteristics of the LSMO/SNTO p-n junctions as a function of applied magnetic field (05 T) were studied between 100 and 300 K. We found that the p-n junction exhibited the CMR behavior. The CMR ratio rR/R0 (rR = RH - R0) is positive in magnetic fields below 0.13 T and at high temperature, while it displays a negative CMR near 100 K and in magnetic fields over 0.13 T. The CMR ratio values are 8% at 0.1 T and 13% at 5 T and 300 K, 40% at 0.1 T and 150 K, 10% at 0.13 T and 60% at 5 T and 100 K. The CMR behavior of the p-n junction is different from those of the LaMnO3 compound family.展开更多
The forming processes of 4,40-dipyridyl-based single-molecule junctions and mechanically induced conductance switching as well as the side-group effects are systematically investigated by applying the ab initio-based ...The forming processes of 4,40-dipyridyl-based single-molecule junctions and mechanically induced conductance switching as well as the side-group effects are systematically investigated by applying the ab initio-based adiabatic geometric optimization method and the one-dimensional transmission combined with three-dimensional correction approximation(OTCTCA)method.The numerical results show that for the 4,40-dipyridyl with a p-conjugated phenyl-phosphoryl or diphenylsilyl side group,the pyridyl vertically anchors on the second atomic layer of the pyramid-shaped Au tip electrode at small inter-electrode distances by laterally pushing the apical Au atom aside,which induces stronger pyridyl-electrode coupling and high-conductance state of the formed junctions.As the inter-electrode distance increases,the pyridyl shifts to the apical Au atom of the tip electrode.This apical Au atom introduces additional scatterings to the tunneling electrons and significantly decreases the conductance of the junctions.Furthermore,for the 4,40-dipyridyl with a phenyl-phosphoryl side group,the probability of manifesting the high-conductance state is decreased due to the oxygen atom reducing the probability of the pyridyl adsorbing on the second layer of Au tip electrode.In contrast,for the 4,40-dipyridyl with a nonconjugated cyclohexyl-phosphoryl side group,the steric hindrance from the bulky cyclohexyl group leads the molecule to preferentially form the O-Au contact,which prevents both the high conductance and mechanically induced conductance switching of the junction.Our results provide a theoretical understanding of the side-group effects on electronic transport properties of single-molecule junctions,offering an alternative explanation for the experimental observations.展开更多
Rational engineering of semiconductor photocatalysts for efficient hydrogen production is of great significance but still challenging,primarily due to the limitations in charge transfer kinetics.Herein,a fascinating p...Rational engineering of semiconductor photocatalysts for efficient hydrogen production is of great significance but still challenging,primarily due to the limitations in charge transfer kinetics.Herein,a fascinating plasmonic tandem heterojunction with the hc-CdS/Mo_(2)C@C heterostructure is aimfully prepared for effectively promoting the charge separation kinetics of the CdS photocatalyst via the synergistic strategy of phase junction,Schottky junction,and photothermal effect.The difference in atomic configuration between cubic-CdS (c-CdS) and hexagonal-CdS (h-CdS) leads to effective charge separation through a typical Ⅱ charge transfer mechanism,and plasmonic Schottky junction further extracts the electrons in the hc-CdS phase junction to realize gradient charge transfer.Besides,the photothermal effect of Mo_(2)C@C helps to expand the light absorption,accelerate charge transfer kinetics,and reduce the hydrogen evolution energy barrier.The carbon layer provides a fast channel for charge transfer and protects the photocatalyst from photocorrosion.As a result,the optimized hc-CMC photocatalyst exhibits a significantly high photocatalytic H_(2)production activity of 28.63 mmol/g/h and apparent quantum efficiency of 61.8%,surpassing most of the reported photocatalysts.This study provides a feasible strategy to enhance the charge transfer kinetics and photocatalytic activity of CdS by constructing plasmonic tandem heterogeneous junctions.展开更多
This article primarily establishes a two-soliton system and employs the Lewis-Riesenfeld invariant inverse control method to achieve shortcuts to adiabaticity(STA)technology.We study an atomic soliton Josephson juncti...This article primarily establishes a two-soliton system and employs the Lewis-Riesenfeld invariant inverse control method to achieve shortcuts to adiabaticity(STA)technology.We study an atomic soliton Josephson junctions(SJJs)device and subsequently compare and analyze it with atomic bosonic Josephson junctions.Moreover,we use higher-order expressions of the auxiliary equations to optimize the results and weaken the detrimental effect of the sloshing amplitude.We find that in the adiabatic shortcut evolution of two systems with time-containing tunnelling rates,the SJJs system is more robust over a rather short time evolution.In comparison with linear ramping,the STA technique is easier to achieve with the precise modulation of the quantum state in the SJJs system.展开更多
Magnetic skyrmions are recognized as potential information carriers for building the next-generation spintronic memory and logic devices.Towards functional device applications,efficient electrical detection of skyrmio...Magnetic skyrmions are recognized as potential information carriers for building the next-generation spintronic memory and logic devices.Towards functional device applications,efficient electrical detection of skyrmions at room temperature is one of the most important prerequisites.展开更多
Low-temperature processed electron transport layer(ETL)of TiO_(2)that is widely used in planar perovskite solar cells(PSCs)has inherent low carrier mobility,resulting in insufficient photogenerated elec-tron transport...Low-temperature processed electron transport layer(ETL)of TiO_(2)that is widely used in planar perovskite solar cells(PSCs)has inherent low carrier mobility,resulting in insufficient photogenerated elec-tron transport and thus recombination loss at buried interface.Herein,we demonstrate an effective strategy of laser embedding of p-n homojunctions in the TiO_(2)ETL to accelerate electron transport in PSCs,through localized build-in electric fields that enables boosted electron mobility by two orders of magnitude.Such embedding is found significantly helpful for not only the enhanced crystallization quality of TiO_(2)ETL,but the fabrication of perovskite films with larger-grain and the less-trap-states.The embedded p-n homojunction enables also the modulation of interfacial energy level between perovskite layers and ETLs,favoring for the reduced voltage deficit of PSCs.Benefiting from these merits,the formamidinium lead iodide(FAPbI_(3))PSCs employing such ETLs deliver a champion efficiency of 25.50%,along with much-improved device stability under harsh conditions,i.e.,maintain over 95%of their initial efficiency after operation at maximum power point under continuous heat and illumination for 500 h,as well as mixed-cation PSCs with a champion efficiency of 22.02%and over 3000 h of ambient storage under humidity stability of 40%.Present study offers new possibilities of regulating charge transport layers via p-n homojunction embedding for high performance optoelectronics.展开更多
Quantum interference effect serves as a critical strategy for addressing incorrect energy level alignment between frontier molecular orbitals and electrodes in molecular junctions. Weak-coupling structures offer an ef...Quantum interference effect serves as a critical strategy for addressing incorrect energy level alignment between frontier molecular orbitals and electrodes in molecular junctions. Weak-coupling structures offer an effective approach to suppress phonon thermal conductance. The thermoelectric properties of pure C_(3)N_(4) nanoribbon devices and C_(3)N_(4)-C_(20) molecular junctions are systematically investigated based on density functional theory(DFT) combined with nonequilibrium Green's function(NEGF) formalism. The results show that pure C_(3)N_(4) nanoribbon devices have superior charge transport capabilities and excellent Seebeck coefficients. A remarkable thermoelectric figure of merit(ZT = 0.98)is achieved near 0.09 e V. The pronounced scattering effect induced by embedding a C_(20) molecule in the center of the C_(3)N_(4) nanoribbon significantly suppresses phonon transport. A maximum ZT value of 1.68 is observed at 0.987 e V. The electron mobility of C_(3)N_(4)-C_(20)-par is effectively increased due to quantum interference effect which greatly improves the alignment between the C_(20) molecule's frontier orbital energy level and C_(3)N_(4) electrodes. The C_(3)N_(4)-C_(20)-van der Waals(vd W) molecular junction allows very few phonons to pass through the C_(20) molecule from the left electrode to the right electrode. As a result, the C_(3)N_(4)-C_(20)-vd W junction achieves an excellent ZT value of 3.82 near the Femi level.展开更多
基金Supported by the National Natural Science Foundation of China(No.90922034)
文摘Thin films of perovskite manganese oxide Lao.66Ca0.29K0.05MnO3（LCKMO） on Au/ITO（ITO=indium tin oxide） substrates were prepared by off-axis radio frequency magnetron sputtering and characterized by X-ray diffrac- tion（XRD）, high-resolution transmission electron microscopy（HRTEM）, and conductive atomic force microscopy （C-AFM） at room temperature. The thin films with thickness ranged from 100 nm to 300 nm basically show cubic structures with a=0.3886 nm, the same as that of the raw material used, but the structures are highly modulated. C-AFM results revealed that the atomic scale p-n junction feature of the thin films was the same as that of the single crystals. The preparation of the thin films thus further confirms the possibility of their application extending from micrometer-sized single crystals to macroscopic thin film.
基金supported by grants from Collaborative Research Fund(Ref:C4032-21GF)General Research Grant(Ref:14114822)+1 种基金Group Research Scheme(Ref:3110146)Area of Excellence(Ref:Ao E/M-402/20)。
文摘Mitochondrial dysfunction and oxidative stress are widely regarded as primary drivers of aging and are associated with several neurodegenerative diseases.The degeneration of motor neurons during aging is a critical pathological factor contributing to the progression of sarcopenia.However,the morphological and functional changes in mitochondria and their interplay in the degeneration of the neuromuscular junction during aging remain poorly understood.A defined systematic search of the Pub Med,Web of Science and Embase databases(last accessed on October 30,2024)was conducted with search terms including'mitochondria','aging'and'NMJ'.Clinical and preclinical studies of mitochondrial dysfunction and neuromuscular junction degeneration during aging.Twentyseven studies were included in this systematic review.This systematic review provides a summary of morphological,functional and biological changes in neuromuscular junction,mitochondrial morphology,biosynthesis,respiratory chain function,and mitophagy during aging.We focus on the interactions and mechanisms underlying the relationship between mitochondria and neuromuscular junctions during aging.Aging is characterized by significant reductions in mitochondrial fusion/fission cycles,biosynthesis,and mitochondrial quality control,which may lead to neuromuscular junction dysfunction,denervation and poor physical performance.Motor nerve terminals that exhibit redox sensitivity are among the first to exhibit abnormalities,ultimately leading to an early decline in muscle strength through impaired neuromuscular junction transmission function.Parg coactivator 1 alpha is a crucial molecule that regulates mitochondrial biogenesis and modulates various pathways,including the mitochondrial respiratory chain,energy deficiency,oxidative stress,and inflammation.Mitochondrial dysfunction is correlated with neuromuscular junction denervation and acetylcholine receptor fragmentation,resulting in muscle atrophy and a decrease in strength during aging.Physical therapy,pharmacotherapy,and gene therapy can alleviate the structural degeneration and functional deterioration of neuromuscular junction by restoring mitochondrial function.Therefore,mitochondria are considered potential targets for preserving neuromuscular junction morphology and function during aging to treat sarcopenia.
基金financial support from the National Key R&D Program of China(2023YFA1407100)the National Natural Science Foundation of China(22373026)+1 种基金Guangdong Science and Technology Department(2021B0301030005,STKJ2023072,GDZX2304005,GDZX2504001,and 2021QN02X538)Ioan Bâldea gratefully acknowledges computational support by the state of Baden-Württemberg through bwHPC and the German Research Foundation through Grant Nos.INST 40/575-1,35/1597-1,and 35/1134-1(JUSTUS 2,bwUniCluster 2/3,and bwForCluster/MLS&WISO/HELIX 2).
文摘Control over charge transport in molecular–scale devices requires a deep understanding of how minute structural changes influence electronic properties.Here,we demonstrate dual transport regimes in tunnel junctions of n-alk-1-yne(CnA)molecules with gold electrodes driven by conformational bifurcation—the emergence of two nearly isoenergetic(planar and skewed)molecular conformers(dihedral anglesα=180°andα≈65°at the alkyne terminus in the gas phase).Although the energy differences are small,these subtle conformational differences manifest as distinct transport behaviors,uncovered through unsupervised machine learning,which identified two junction groups:“short”and“long”chains,with distinct attenuation factors(β_(short)≈1.0 vs.β_(long)≈0.74)and contact conductances(G_(c,short)≈200μS vs.G_(c,long)≈8μS).This dramatic impact of the dihedral angle exceeds the impact of the inter-ring twist angle in biphenyl-based junctions and rivals changes induced by switching from gold to platinum electrodes or from monothiol to dithiol anchors in oligoacene and oligophenylene junctions.X-ray photoelectron spectroscopy(XPS)confirmed this bifurcation,linking the“short”and“long”groups to planar and skewed conformers,with dihedrals remarkably agreeing with the gas-phase values.This work establishes conformational bifurcation as a promising route for designing programmable nanotransport properties through anchor-group control.
基金financially supported by the Ministry of Science and Technology of China (2016YFB0401100 and 2017YFA0204503)the National Natural Science Foundation of China (51633006, 51725304, 51733004 and 51703159)the Strategic Priority Research Program of the Chinese Academy of Sciences (XDB12030300)
文摘Two-dimensional single-crystalline p-n junctions of organic semiconductors(pn-2 DCOSs) show great potential in organic logic circuits due to their single crystal nature and excellent ambipolar charge transport. However,there are only few reports on pn-2 DCOSs because it is difficult to obtain such highly ordered structure in p-n junction.Herein, a novel and effective solution processing method of secondary transfer technology based on the facile drop casting is used to fabricate devices of pn-2 DCOSs based on C8-BTBT(p-type) and TFT-CN(n-type) successfully. The high-performance ambipolar field transistors based on such ultrathin pn-2 DCOSs with several molecular layers thickness show wellbalanced ambipolar charge transport behaviors with hole mobility as high as 0.43 cm^2 V^-1 s^-1 and electron mobility up to 0.11 cm^2 V^-1 s(^-1), respectively. This work is essential for studying the intrinsic properties of organic p-n junctions and achieving high performance in organic complementary circuits.
基金This work was supported by the National Young 1000 Talent Plan, Pujiang Talent Plan in Shanghai, National Natural Science Foundation of China （Nos. 61322407, 11474058, and 11322441）, the Chinese Na- tional Science Fund for Talent Training in Basic Science （No. J1103204）, and Ten Thousand Talents Program for young talents. Part of the sample fabrication was performed at Fudan Nano-fabrication Laboratory. We acknowledge Yuanbo Zhang, Yizheng Wu, Zuimin Jiang, Likai Li, Boliang Chen for great assistance during the device fabrication and measurements.
文摘Two-dimensional （2D） materials have attracted substantial attention in electronic and optoelectronic applications with the superior advantages of being flexible, transparent, and highly tunable. Gapless graphene exhibits ultra-broadband and fast photoresponse while the 2D semiconducting MoS2 and GaTe exhibit high sensitivity and tunable responsivity to visible light. However, the device yield and repeatability call for further improvement to achieve large-scale uniformity. Here, we report a layer-by-layer growth of wafer-scale GaTe with a high hole mobility of 28.4 cm^2/（V.s） by molecular beam epitaxy. The arrayed p-n ）unctions were developed by growing few-layer GaTe directly on fhree-inch Si wafers. The resultant diodes reveal good rectifying characteristics and a high photovoltaic external quantum efficiency up to 62% at 4.8 μW under zero bias. The photocurrent reaches saturation fast enough to capture a time constant of 22 μs and shows no sign of device degradation after 1.37 million cycles of operation. Most strikingly, such high performance has been achieved across the entire wafer, making the volume production of devices accessible. Finally, several photoimages were acquired by the GaTe/Si photodiodes with reasonable contrast and spatial resolution, demonstrating the potential of integrating the 2D materials with silicon technology for novel optoelectronic devices.
基金supported by the National Natural Science Foundation of China(51872031,52073032,and 61904013)the Fundamental Research Funds for the Central Universities。
文摘The emulation of biological synapses with learning and memory functions and versatile plasticity is significantly promising for neuromorphic computing systems.Here,a robust and continuously adjustable mechanoplastic semifloating-gate transistor is demonstrated based on an integrated graphene/hexagonal boron nitride/tungsten diselenide van der Waals heterostructure and a triboelectric nanogenerator(TENG).The working states(p-n junction or n;-n junction)can be manipulated and switched under the sophisticated modulation of triboelectric potential derived from mechanical actions,which is attributed to carriers trapping and detrapping in the graphene layer.Furthermore,a reconfigurable artificial synapse is constructed based on such mechanoplastic transistor that can simulate typical synaptic plasticity and implement dynamic control correlations in each response mode by further designing the amplitude and duration.The artificial synapse can work with ultra-low energy consumption at 74.2 f J per synaptic event and the extended synaptic weights.Under the synergetic effect of the semifloating gate,the synaptic device can enable successive mechanical facilitation/depression,short-/long-term plasticity and learning-experience behavior,exhibiting the mechanical behavior derived synaptic plasticity.Such reconfigurable and mechanoplastic features provide an insight into the applications of energyefficient and real-time interactive neuromodulation in the future artificial intelligent system beyond von Neumann architecture.
基金The Natural Science Foundation of Guangdong Province(Project No.2023A1515012352)。
文摘Zinc oxide(ZnO),as a broadband gap semiconductor material,exhibits unique physical and chemical properties that make it highly suitable for optoelectronics,piezoelectric devices,and gas-sensitive sensors,showing significant potential for various applications.This paper focuses on the regulation and application of ZnO-based p-n junctions and piezoelectric devices.It discusses in detail the preparation of ZnO materials,the construction of p-n junctions,the optimization of piezoelectric device performance,and its application in various fields.By employing different preparation methods and strategies,high-quality ZnO thin films can be grown,and effective control of p-type conductivity achieved.This study provides both a theoretical foundation and technical support for controlling the performance of ZnO-based piezoelectric devices,as well as paving new pathways for the broader application of ZnO materials.
基金supported by the National Key R&D Program of China(Grant Nos.2022YFB3605500 and 2022YFB3605503).
文摘The p-n junction is the foundation building structure for manufacturing various electronic and optoelec-tronic devices.Ultrawide bandgap semiconductors are expected to overcome the limited power capability of Si-based electronic device,however,it is very difficult to achieve efficient bipolar doping due to the asymmetric doping effect,thereby impeding the development of p-n homojunction and related bipolar devices,especially for the Ga_(2)O_(3)-based materials and devices.Here,we demonstrate a unique one-step integrated growth of p-type N-doped(201)β-Ga_(2)O_(3)/n-type Si-doped(¯201)β-Ga_(2)O_(3)films by phase tran-sition and in-situ pre-doping of dopants,and fabrication of fullβ-Ga_(2)O_(3)linearly-graded p-n homojunc-tion diode from them.The fullβ-Ga_(2)O_(3)p-n homojunction diode possesses a large built-in potential of 4.52 eV,a high operation electric field>2.90 MV/cm in the reverse-bias regime,good longtime-stable rectifying behaviors with a rectification ratio of 104,and a high-speed switching and good surge robust-ness with a weak minority-carrier charge storage.Our work opens the way to the fabrication of Ga_(2)O_(3)-based p-n homojunction,lays the foundation for fullβ-Ga_(2)O_(3)-based bipolar devices,and paves the way for the novel fabrication of p-n homojunction for wide-bandgap oxides.
文摘The sluggish kinetics of the oxygen reduction reaction(ORR)and high over potential of oxygen evolution reaction(OER)are big challenges in the development of high-performance zinc-air batteries(ZABs)and fuel cells.In this work,we report a rational design and a simple fabrication strategy of a photo-enhanced Co single-atom catalyst(SAC)comprising g-C3N4 coupled with cobalt-nitrogen-doped hierarchical mesoporous carbon(Co-N/MPC),forming a staggered p-n heterojunction that effectively improves charge separation and enhances electrocatalytic activity.The incorporation of Co SACs and g-C3N4 synergistically optimizes the photogenerated electron-hole pair separation,significantly boosting the intrinsic ORR-OER duplex activity.Under illumination,g-C_(3)N_(4)@Co-N/MPC exhibits an outstanding ORR half-wave potential(E1/2)of 0.841 V(vs.RHE)in 0.1 mol L^(–1)KOH and a low OER overpotential of 497.4 mV(vs.RHE)at 10 mA cm^(–2)in 1 mol L^(–1)KOH.Notably,the catalyst achieves an exceptional peak power density of 850.7 mW cm^(–2)in ZABs and of 411 mW cm^(–2)even in H_(2)-air fuel cell.In addition,g-C_(3)N_(4)@Co-N/MPC-based ZABs also show remarkable cycling stability exceeding 250 h.The advanced photo-induced charge separation at the p-n heterojunction facilitates faster electron transfer kinetics,and the mass transport owing to hierarchical mesoporous structure of Co-N-C,thereby reducing the overpotential and enhancing the overall energy conversion efficiency.This work provides a new perspective on designing next-generation of single-atom dispersed oxygen reaction catalysts,paving the way for high-performance photo-enhanced energy storage and conversion systems.
基金supported by the National Key R&D Program of China(Grant No.2022YFB3505301)the National Key R&D Program of Shanxi Province(Grant No.202302050201014)+1 种基金the National Natural Science Foundation of China(Grant No.12304148)the Natural Science Basic Research Program of Shanxi Province(Grant No.202203021222219)。
文摘Multiferroic tunnel junctions(MFTJs),which combine tunneling magnetoresistance(TMR)and electroresistance(TER)efects,have emerged as key candidates for data storage.Two-dimensional van der Waals(vdW)MFTJs,in particular,are promising spintronic devices for the post-Moore era.However,these vdW MFTJs are typically based on multiferroics composed of ferromagnetic and ferroelectric materials or multilayer magnetic materials with sliding ferroelectricity,which increases device fabrication complexity.In this work,we design a vdW MFTJ using bilayer MoPtGe_(2)S_(6),a material with homologous multiferroicity in each monolayer,combined with symmetric PtTe_(2)electrodes.Using frst-principles calculations based on density functional theory and nonequilibrium Green's functions,we theoretically explore the spin-polarized electronic transport properties of this MFTJ.By controlling the ferroelectric and ferromagnetic polarization directions of bilayer MoPtGe_(2)S_(6),the MFTJ can exhibit six distinct non-volatile resistance states,with maximum TMR(137%)and TER(1943%)ratios.Under biaxial strain,TMR and TER can increase to 265%and 4210%,respectively.The TER ratio also increases to 2186%under a 0.1 V bias voltage.Remarkably,the MFTJ exhibits a pronounced spin-fltering and a signifcant negative diferential resistance efect.These fndings not only highlight the potential of monolayer multiferroic MoPtGe_(2)S_(6)for MFTJs but also ofer valuable theoretical insights for future experimental investigations.
基金Natural Sciences and Engineering Research Council of Canada and Huawei Canada through a Partnership(CRDPJ 538381-18).
文摘We experimentally demonstrate a silicon photonic modulator that can be loaded with a combination of lateral and interleaved p-n junctions to enhance its phase modulation.We use an asymmetric Bragg grating to introduce mode conversion in the active area,allowing the modulator to operate in reflection without introducing additional on-chip loss.With a compact footprint(phase shifter length of 290μm),the modulator demonstrates a modulation speed up to 45 Gb/s with a bit error rate below the 7% forward-error-correction(FEC)threshold(up to 55 Gb/s with 20% FEC),and a low power consumption of 226 fJ/bit.
文摘We have successfully fabricated the colossal magnetoresistive (CMR) p-n junctions of perovskite oxide La0.9Sr0.1MnO3/SrNb0.01Ti0.99O3 (LSMO/SNTO) with laser molecular beam epitaxy. The I-V characteristics of the LSMO/SNTO p-n junctions as a function of applied magnetic field (05 T) were studied between 100 and 300 K. We found that the p-n junction exhibited the CMR behavior. The CMR ratio rR/R0 (rR = RH - R0) is positive in magnetic fields below 0.13 T and at high temperature, while it displays a negative CMR near 100 K and in magnetic fields over 0.13 T. The CMR ratio values are 8% at 0.1 T and 13% at 5 T and 300 K, 40% at 0.1 T and 150 K, 10% at 0.13 T and 60% at 5 T and 100 K. The CMR behavior of the p-n junction is different from those of the LaMnO3 compound family.
基金supported by the National Natural Science Foundation of China(Grant Nos.12474286,22173052,and 12204281).
文摘The forming processes of 4,40-dipyridyl-based single-molecule junctions and mechanically induced conductance switching as well as the side-group effects are systematically investigated by applying the ab initio-based adiabatic geometric optimization method and the one-dimensional transmission combined with three-dimensional correction approximation(OTCTCA)method.The numerical results show that for the 4,40-dipyridyl with a p-conjugated phenyl-phosphoryl or diphenylsilyl side group,the pyridyl vertically anchors on the second atomic layer of the pyramid-shaped Au tip electrode at small inter-electrode distances by laterally pushing the apical Au atom aside,which induces stronger pyridyl-electrode coupling and high-conductance state of the formed junctions.As the inter-electrode distance increases,the pyridyl shifts to the apical Au atom of the tip electrode.This apical Au atom introduces additional scatterings to the tunneling electrons and significantly decreases the conductance of the junctions.Furthermore,for the 4,40-dipyridyl with a phenyl-phosphoryl side group,the probability of manifesting the high-conductance state is decreased due to the oxygen atom reducing the probability of the pyridyl adsorbing on the second layer of Au tip electrode.In contrast,for the 4,40-dipyridyl with a nonconjugated cyclohexyl-phosphoryl side group,the steric hindrance from the bulky cyclohexyl group leads the molecule to preferentially form the O-Au contact,which prevents both the high conductance and mechanically induced conductance switching of the junction.Our results provide a theoretical understanding of the side-group effects on electronic transport properties of single-molecule junctions,offering an alternative explanation for the experimental observations.
基金National Natural Science Foundation of China (Nos. 22371165, 22209098 and 21971143)111 Project (D20015)Opening Found of Hubei Three Gorges Laboratory (SC232001, SK213002)。
文摘Rational engineering of semiconductor photocatalysts for efficient hydrogen production is of great significance but still challenging,primarily due to the limitations in charge transfer kinetics.Herein,a fascinating plasmonic tandem heterojunction with the hc-CdS/Mo_(2)C@C heterostructure is aimfully prepared for effectively promoting the charge separation kinetics of the CdS photocatalyst via the synergistic strategy of phase junction,Schottky junction,and photothermal effect.The difference in atomic configuration between cubic-CdS (c-CdS) and hexagonal-CdS (h-CdS) leads to effective charge separation through a typical Ⅱ charge transfer mechanism,and plasmonic Schottky junction further extracts the electrons in the hc-CdS phase junction to realize gradient charge transfer.Besides,the photothermal effect of Mo_(2)C@C helps to expand the light absorption,accelerate charge transfer kinetics,and reduce the hydrogen evolution energy barrier.The carbon layer provides a fast channel for charge transfer and protects the photocatalyst from photocorrosion.As a result,the optimized hc-CMC photocatalyst exhibits a significantly high photocatalytic H_(2)production activity of 28.63 mmol/g/h and apparent quantum efficiency of 61.8%,surpassing most of the reported photocatalysts.This study provides a feasible strategy to enhance the charge transfer kinetics and photocatalytic activity of CdS by constructing plasmonic tandem heterogeneous junctions.
基金supported by the National Natural Science Foundation of China(Grant nos.12075145 and 12211540002)the Science and Technology Commission of Shanghai Municipal(Grant no.2019SHZDZX01-ZX04)。
文摘This article primarily establishes a two-soliton system and employs the Lewis-Riesenfeld invariant inverse control method to achieve shortcuts to adiabaticity(STA)technology.We study an atomic soliton Josephson junctions(SJJs)device and subsequently compare and analyze it with atomic bosonic Josephson junctions.Moreover,we use higher-order expressions of the auxiliary equations to optimize the results and weaken the detrimental effect of the sloshing amplitude.We find that in the adiabatic shortcut evolution of two systems with time-containing tunnelling rates,the SJJs system is more robust over a rather short time evolution.In comparison with linear ramping,the STA technique is easier to achieve with the precise modulation of the quantum state in the SJJs system.
基金supported by the National Key R&D Program of China(Grant No.2022YFA1405100)the NSFC distinguished Young Scholar program(Grant No.12225409)+6 种基金the Basic Science Center Project of National Natural Science Foundation of China(NSFC)(Grant No.52388201)the NSFC general program(Grant Nos.52271181,51831005,and 12421004)the Innovation Program for Quantum Science and Technology(Grant No.2023ZD0300500)Beijing Natural Science Foundation(Grant No.Z240006)supported by the KAUST Office of Sponsored Research(OSR)under Award Nos.ORA-CRG102021-4665 and ORA-CRG11-2022-5031supported by the National Key Research and Development Program of China(No.2024YFA1408503)Sichuan Province Science and Technology Support Program(No.2025YFHZ0147)。
文摘Magnetic skyrmions are recognized as potential information carriers for building the next-generation spintronic memory and logic devices.Towards functional device applications,efficient electrical detection of skyrmions at room temperature is one of the most important prerequisites.
基金financially supported by the project of the National Natural Science Foundation of China(52202115 and 52172101)the China Postdoctoral Science Foundation(2022M722586)+2 种基金the Natural Science Foundation of Chongqing,China(CSTB2022NSCQ-MSX1085)the Shaanxi Science and Technology Innovation Team(2023-CX-TD-44)the Fundamental Research Funds for the Central Universities(3102019JC005 and G2022KY0604)。
文摘Low-temperature processed electron transport layer(ETL)of TiO_(2)that is widely used in planar perovskite solar cells(PSCs)has inherent low carrier mobility,resulting in insufficient photogenerated elec-tron transport and thus recombination loss at buried interface.Herein,we demonstrate an effective strategy of laser embedding of p-n homojunctions in the TiO_(2)ETL to accelerate electron transport in PSCs,through localized build-in electric fields that enables boosted electron mobility by two orders of magnitude.Such embedding is found significantly helpful for not only the enhanced crystallization quality of TiO_(2)ETL,but the fabrication of perovskite films with larger-grain and the less-trap-states.The embedded p-n homojunction enables also the modulation of interfacial energy level between perovskite layers and ETLs,favoring for the reduced voltage deficit of PSCs.Benefiting from these merits,the formamidinium lead iodide(FAPbI_(3))PSCs employing such ETLs deliver a champion efficiency of 25.50%,along with much-improved device stability under harsh conditions,i.e.,maintain over 95%of their initial efficiency after operation at maximum power point under continuous heat and illumination for 500 h,as well as mixed-cation PSCs with a champion efficiency of 22.02%and over 3000 h of ambient storage under humidity stability of 40%.Present study offers new possibilities of regulating charge transport layers via p-n homojunction embedding for high performance optoelectronics.
基金Project supported by the National Natural Science Foundation of China (Grant No. 12164046)。
文摘Quantum interference effect serves as a critical strategy for addressing incorrect energy level alignment between frontier molecular orbitals and electrodes in molecular junctions. Weak-coupling structures offer an effective approach to suppress phonon thermal conductance. The thermoelectric properties of pure C_(3)N_(4) nanoribbon devices and C_(3)N_(4)-C_(20) molecular junctions are systematically investigated based on density functional theory(DFT) combined with nonequilibrium Green's function(NEGF) formalism. The results show that pure C_(3)N_(4) nanoribbon devices have superior charge transport capabilities and excellent Seebeck coefficients. A remarkable thermoelectric figure of merit(ZT = 0.98)is achieved near 0.09 e V. The pronounced scattering effect induced by embedding a C_(20) molecule in the center of the C_(3)N_(4) nanoribbon significantly suppresses phonon transport. A maximum ZT value of 1.68 is observed at 0.987 e V. The electron mobility of C_(3)N_(4)-C_(20)-par is effectively increased due to quantum interference effect which greatly improves the alignment between the C_(20) molecule's frontier orbital energy level and C_(3)N_(4) electrodes. The C_(3)N_(4)-C_(20)-van der Waals(vd W) molecular junction allows very few phonons to pass through the C_(20) molecule from the left electrode to the right electrode. As a result, the C_(3)N_(4)-C_(20)-vd W junction achieves an excellent ZT value of 3.82 near the Femi level.
