The in-plane optical anisotropy(IPOA) of c-plane In Ga N/Ga N quantum disks(Qdisks) in nanowires grown on MoS_(2)/Mo and Ti/Mo substrates is investigated using reflectance difference spectroscopy(RDS) at room temperat...The in-plane optical anisotropy(IPOA) of c-plane In Ga N/Ga N quantum disks(Qdisks) in nanowires grown on MoS_(2)/Mo and Ti/Mo substrates is investigated using reflectance difference spectroscopy(RDS) at room temperature. A large IPOA related to defect or impurity states is observed. The IPOA of samples grown on MoS_(2)/Mo is approximately one order of magnitude larger than that of samples grown on Ti/Mo substrates. Numerical calculations based on the envelope function approximation have been performed to analyze the origin of the IPOA. It is found that the IPOA primarily results from the segregation of indium atoms in the In Ga N/Ga N Qdisks. This work highlights the significant influence of substrate materials on the IPOA of semiconductor heterostructures.展开更多
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 62074036, 61674038, and 11574302)Foreign Cooperation Project of Fujian Province (Grant No. 2023I0005)+2 种基金Open Research Fund Program of the State Key Laboratory of Low-Dimensional Quantum Physics (Grant No. KF202108)the National Key Research and Development Program (Grant No. 2016YFB0402303)the Foundation of Fujian Provincial Department of Industry and Information Technology of China (Grant No. 82318075)。
文摘The in-plane optical anisotropy(IPOA) of c-plane In Ga N/Ga N quantum disks(Qdisks) in nanowires grown on MoS_(2)/Mo and Ti/Mo substrates is investigated using reflectance difference spectroscopy(RDS) at room temperature. A large IPOA related to defect or impurity states is observed. The IPOA of samples grown on MoS_(2)/Mo is approximately one order of magnitude larger than that of samples grown on Ti/Mo substrates. Numerical calculations based on the envelope function approximation have been performed to analyze the origin of the IPOA. It is found that the IPOA primarily results from the segregation of indium atoms in the In Ga N/Ga N Qdisks. This work highlights the significant influence of substrate materials on the IPOA of semiconductor heterostructures.
