Correction to:Nano-Micro Letters(2025)17:191 https://doi.org/10.1007/s40820-025-01702-7 Following the publication of the original article[1],the authors reported an error in Fig.3(b),and the figure legend was reversed...Correction to:Nano-Micro Letters(2025)17:191 https://doi.org/10.1007/s40820-025-01702-7 Following the publication of the original article[1],the authors reported an error in Fig.3(b),and the figure legend was reversed.The correct Fig.3 has been provided in this orrection.展开更多
Emerging two-dimensional(2D)semiconductors are among the most promising materials for ultra-scaled transistors due to their intrinsic atomic-level thickness.As the stacking process advances,the complexity and cost of ...Emerging two-dimensional(2D)semiconductors are among the most promising materials for ultra-scaled transistors due to their intrinsic atomic-level thickness.As the stacking process advances,the complexity and cost of nanosheet field-effect transistors(NSFETs)and complementary FET(CFET)continue to rise.The 1 nm technology node is going to be based on Si-CFET process according to international roadmap for devices and systems(IRDS)(2022,https://irds.ieee.org/),but not publicly confirmed,indicating that more possibilities still exist.The miniaturization advantage of 2D semiconductors motivates us to explore their potential for reducing process costs while matching the performance of next-generation nodes in terms of area,power consumption and speed.In this study,a comprehensive framework is built.A set of MoS2 NSFETs were designed and fabricated to extract the key parameters and performances.And then for benchmarking,the sizes of 2D-NSFET are scaled to a extent that both of the Si-CFET and 2D-NSFET have the same average device footprint.Under these conditions,the frequency of ultra-scaled 2D-NSFET is found to improve by 36%at a fixed power consumption.This work verifies the feasibility of replacing silicon-based CFETs of 1 nm node with 2D-NSFETs and proposes a 2D technology solution for 1 nm nodes,i.e.,“2D eq 1 nm”nodes.At the same time,thanks to the lower characteristic length of 2D semiconductors,the miniaturized 2D-NSFET achieves a 28%frequency increase at a fixed power consumption.Further,developing a standard cell library,these devices obtain a similar trend in 16-bit RISC-V CPUs.This work quantifies and highlights the advantages of 2D semiconductors in advanced nodes,offering new possibilities for the application of 2D semiconductors in high-speed and low-power integrated circuits.展开更多
According to the international technology roadmap for semiconductors （ITRS）,32nm technology node will be introduced around 2009. Scaling of CMOS logic devices from 45 to 32nm node has come across significant barrier...According to the international technology roadmap for semiconductors （ITRS）,32nm technology node will be introduced around 2009. Scaling of CMOS logic devices from 45 to 32nm node has come across significant barriers. Overcoming these pitch-scaling induced barriers requires integrating the most advanced process technologies into product manufacturing. This paper reviews and discusses new technology applications that could be potentially integrated into 32nm node in the following areas：extension of immersion lithography,mobility enhancement substrate technology,metal/ high-k （MHK） gate stack, ultra-shallow junction （USJ） and other strain enhancement engineering methods, including stress proximity effect （SPT）, dual stress liner （DSL）, stress memorization technique （SMT）, high aspect ratio process （HARP） for STI and PMD,embedded SiGe （for pFET） and SiC （for nFET） source/drain （S/D） using selective epitaxial growth （SEG） method,metallization for middle of line （MOL） and back-end of line （BEOL） ,and ultra low-k （ULK） integration.展开更多
Metal-oxide-semiconductor field effect transistor(MOSFET) intrinsic gain degradation caused by channel length modulation(CLM) effect is examined.A simplified model based on Berkeley short-channel insulator-gate field ...Metal-oxide-semiconductor field effect transistor(MOSFET) intrinsic gain degradation caused by channel length modulation(CLM) effect is examined.A simplified model based on Berkeley short-channel insulator-gate field effect transistor model version 4(BSIM4) current expression for sub-100 nm MOSFET intrinsic gain is deduced,which only needs a few technology parameters.With this transistor intrinsic gain model,complementary metal-oxide-semiconductor(CMOS) operational amplifier(op amp) DC gain could be predicted.A two-stage folded cascode op amp is used as an example in this work.Non-minimum length device is used to improve the op amp DC gain.An improvement of 20 dB is proved when using doubled channel length design.Optimizing transistor bias condition and using advanced technology with thinner gate dielectric thickness and shallower source/drain junction depth can also increase the op amp DC gain.After these,a full op amp DC gain scaling roadmap is proposed,from 130 nm technology node to 32 nm technology node.Five scaled op amps are built and their DC gains in simulation roll down from 69.6 to 41.1 dB.Simulation shows transistors biased at higher source-drain voltage will have more impact on the op amp DC gain scaling over technology.The prediction based on our simplified gain model agrees with SPICE simulation results.展开更多
This paper proposes a novel loadless 4T SRAM cell composed of nMOS transistors. The SRAM cell is based on 32nm silicon-on-insulator （SO1） technology node. It consists of two access transistors and two pull-down tran...This paper proposes a novel loadless 4T SRAM cell composed of nMOS transistors. The SRAM cell is based on 32nm silicon-on-insulator （SO1） technology node. It consists of two access transistors and two pull-down transistors. The pull-down transistors have larger channel length than the access transistors. Due to the significant short channel effect of small-size MOS transistors, the access transistors have much larger leakage current than the pull-down transistors,enabling the SRAM cell to maintain logic ＂1＂ while in standby. The storage node voltages of the cell are fed back to the back-gates of the access transistors,enabling the stable ＂read＂ operation of the cell. The use of back-gate feedback also helps to im- prove the static noise margin （SNM） of the cell. The proposed SRAM cell has smaller area than conventional bulk 6T SRAM cells and 4T SRAM cells. The speed and power dissipation of the SRAM cell are simulated and discussed. The SRAM cell can operate with a 0. 5V supply voltage.展开更多
Detailed routing has become much challenging in modern circuit designs due to the extreme scaling of chip size and the complicated design rules.In this paper,we give an effective algorithm for detailed routing conside...Detailed routing has become much challenging in modern circuit designs due to the extreme scaling of chip size and the complicated design rules.In this paper,we give an effective algorithm for detailed routing considering advanced technology nodes.First,we present a valid pin-access candidates generation technology for handling complex pin shapes.Then,we propose a tree-based nets components selection algorithm to decide connecting order for multiple nets components.Finally,combined with global routing results and advanced technology nodes,an initial routing results optimization algorithm is presented to achieve the final detailed routing results.Experimental results on industry benchmarks show that,our proposed algorithm not only achieves 100%routability on real industrial cases in a reasonable runtime,but also optimizes total wirelength,total vias and other advanced technology nodes simultaneously.展开更多
It is predicted that CMOS technology will probably enter into 22 nm node around 2012. Scaling of CMOS logic technology from 32 to 22 nm node meets more critical issues and needs some significant changes of the technol...It is predicted that CMOS technology will probably enter into 22 nm node around 2012. Scaling of CMOS logic technology from 32 to 22 nm node meets more critical issues and needs some significant changes of the technology, as well as integration of the advanced processes. This paper will review the key processing technologies which can be potentially integrated into 22 nm and beyond technology nodes, including double patterning technology with high NA water immersion lithography and EUV lithography, new device architectures, high K/metal gate （HK/MG） stack and integration technology, mobility enhancement technologies, source/drain engineering and advanced copper interconnect technology with ultra-low-k process.展开更多
基金supported in part by STI 2030-Major Projects under Grant 2022ZD0209200in part by Beijing Natural Science Foundation-Xiaomi Innovation Joint Fund (L233009)+4 种基金in part by National Natural Science Foundation of China under Grant No. 62374099in part by the Tsinghua-Toyota Joint Research Fundin part by the Daikin Tsinghua Union Programin part by Independent Research Program of School of Integrated Circuits,Tsinghua Universitysponsored by CIE-Tencent Robotics X Rhino-Bird Focused Research Program
文摘Correction to:Nano-Micro Letters(2025)17:191 https://doi.org/10.1007/s40820-025-01702-7 Following the publication of the original article[1],the authors reported an error in Fig.3(b),and the figure legend was reversed.The correct Fig.3 has been provided in this orrection.
基金supported in part by STI 2030-Major Projects under Grant 2022ZD0209200in part by Beijing Natural Science Foundation-Xiaomi Innovation Joint Fund(L233009)+4 种基金in part by National Natural Science Foundation of China under Grant No.62374099in part by the Tsinghua-Toyota Joint Research Fundin part by the Daikin Tsinghua Union Programin part by Independent Research Program of School of Integrated Circuits,Tsinghua UniversityThis work was also sponsored by CIE-Tencent Robotics X Rhino-Bird Focused Research Program.
文摘Emerging two-dimensional(2D)semiconductors are among the most promising materials for ultra-scaled transistors due to their intrinsic atomic-level thickness.As the stacking process advances,the complexity and cost of nanosheet field-effect transistors(NSFETs)and complementary FET(CFET)continue to rise.The 1 nm technology node is going to be based on Si-CFET process according to international roadmap for devices and systems(IRDS)(2022,https://irds.ieee.org/),but not publicly confirmed,indicating that more possibilities still exist.The miniaturization advantage of 2D semiconductors motivates us to explore their potential for reducing process costs while matching the performance of next-generation nodes in terms of area,power consumption and speed.In this study,a comprehensive framework is built.A set of MoS2 NSFETs were designed and fabricated to extract the key parameters and performances.And then for benchmarking,the sizes of 2D-NSFET are scaled to a extent that both of the Si-CFET and 2D-NSFET have the same average device footprint.Under these conditions,the frequency of ultra-scaled 2D-NSFET is found to improve by 36%at a fixed power consumption.This work verifies the feasibility of replacing silicon-based CFETs of 1 nm node with 2D-NSFETs and proposes a 2D technology solution for 1 nm nodes,i.e.,“2D eq 1 nm”nodes.At the same time,thanks to the lower characteristic length of 2D semiconductors,the miniaturized 2D-NSFET achieves a 28%frequency increase at a fixed power consumption.Further,developing a standard cell library,these devices obtain a similar trend in 16-bit RISC-V CPUs.This work quantifies and highlights the advantages of 2D semiconductors in advanced nodes,offering new possibilities for the application of 2D semiconductors in high-speed and low-power integrated circuits.
文摘According to the international technology roadmap for semiconductors （ITRS）,32nm technology node will be introduced around 2009. Scaling of CMOS logic devices from 45 to 32nm node has come across significant barriers. Overcoming these pitch-scaling induced barriers requires integrating the most advanced process technologies into product manufacturing. This paper reviews and discusses new technology applications that could be potentially integrated into 32nm node in the following areas：extension of immersion lithography,mobility enhancement substrate technology,metal/ high-k （MHK） gate stack, ultra-shallow junction （USJ） and other strain enhancement engineering methods, including stress proximity effect （SPT）, dual stress liner （DSL）, stress memorization technique （SMT）, high aspect ratio process （HARP） for STI and PMD,embedded SiGe （for pFET） and SiC （for nFET） source/drain （S/D） using selective epitaxial growth （SEG） method,metallization for middle of line （MOL） and back-end of line （BEOL） ,and ultra low-k （ULK） integration.
文摘Metal-oxide-semiconductor field effect transistor(MOSFET) intrinsic gain degradation caused by channel length modulation(CLM) effect is examined.A simplified model based on Berkeley short-channel insulator-gate field effect transistor model version 4(BSIM4) current expression for sub-100 nm MOSFET intrinsic gain is deduced,which only needs a few technology parameters.With this transistor intrinsic gain model,complementary metal-oxide-semiconductor(CMOS) operational amplifier(op amp) DC gain could be predicted.A two-stage folded cascode op amp is used as an example in this work.Non-minimum length device is used to improve the op amp DC gain.An improvement of 20 dB is proved when using doubled channel length design.Optimizing transistor bias condition and using advanced technology with thinner gate dielectric thickness and shallower source/drain junction depth can also increase the op amp DC gain.After these,a full op amp DC gain scaling roadmap is proposed,from 130 nm technology node to 32 nm technology node.Five scaled op amps are built and their DC gains in simulation roll down from 69.6 to 41.1 dB.Simulation shows transistors biased at higher source-drain voltage will have more impact on the op amp DC gain scaling over technology.The prediction based on our simplified gain model agrees with SPICE simulation results.
文摘This paper proposes a novel loadless 4T SRAM cell composed of nMOS transistors. The SRAM cell is based on 32nm silicon-on-insulator （SO1） technology node. It consists of two access transistors and two pull-down transistors. The pull-down transistors have larger channel length than the access transistors. Due to the significant short channel effect of small-size MOS transistors, the access transistors have much larger leakage current than the pull-down transistors,enabling the SRAM cell to maintain logic ＂1＂ while in standby. The storage node voltages of the cell are fed back to the back-gates of the access transistors,enabling the stable ＂read＂ operation of the cell. The use of back-gate feedback also helps to im- prove the static noise margin （SNM） of the cell. The proposed SRAM cell has smaller area than conventional bulk 6T SRAM cells and 4T SRAM cells. The speed and power dissipation of the SRAM cell are simulated and discussed. The SRAM cell can operate with a 0. 5V supply voltage.
文摘Detailed routing has become much challenging in modern circuit designs due to the extreme scaling of chip size and the complicated design rules.In this paper,we give an effective algorithm for detailed routing considering advanced technology nodes.First,we present a valid pin-access candidates generation technology for handling complex pin shapes.Then,we propose a tree-based nets components selection algorithm to decide connecting order for multiple nets components.Finally,combined with global routing results and advanced technology nodes,an initial routing results optimization algorithm is presented to achieve the final detailed routing results.Experimental results on industry benchmarks show that,our proposed algorithm not only achieves 100%routability on real industrial cases in a reasonable runtime,but also optimizes total wirelength,total vias and other advanced technology nodes simultaneously.
基金the National Natural Science Foundation of China (Grant Nos. 60625403, 90207004)the National Basic Research Program of China (Grant No. 2006CB302701)
文摘It is predicted that CMOS technology will probably enter into 22 nm node around 2012. Scaling of CMOS logic technology from 32 to 22 nm node meets more critical issues and needs some significant changes of the technology, as well as integration of the advanced processes. This paper will review the key processing technologies which can be potentially integrated into 22 nm and beyond technology nodes, including double patterning technology with high NA water immersion lithography and EUV lithography, new device architectures, high K/metal gate （HK/MG） stack and integration technology, mobility enhancement technologies, source/drain engineering and advanced copper interconnect technology with ultra-low-k process.
