NVRAM(非易失性随机存储器)因其具有读写速度快、数据非易失的特点,常用来存取重要数据。在读写速度要求不高的场合,为降低成本,可用现有的Flash存储器来代替NVRAM,这需要提供NVRAM To Flash驱动。但现有的驱动效率不高,写数据速度太慢...NVRAM(非易失性随机存储器)因其具有读写速度快、数据非易失的特点,常用来存取重要数据。在读写速度要求不高的场合,为降低成本,可用现有的Flash存储器来代替NVRAM,这需要提供NVRAM To Flash驱动。但现有的驱动效率不高,写数据速度太慢,给使用者带来不便。基于Vx-W orks操作系统,提出一种新的NVRAM To Flash驱动程序设计方法,该方法实现了NVRAM的两个接口函数,通过减少擦除Flash次数,提高了数据读写速度。展开更多
Magnetic tunnel junction(MTJ) based spin transfer torque magnetic random access memory(STT-MRAM) has been gaining tremendous momentum in high performance microcontroller(MCU) applications. As e Flash-replacement type ...Magnetic tunnel junction(MTJ) based spin transfer torque magnetic random access memory(STT-MRAM) has been gaining tremendous momentum in high performance microcontroller(MCU) applications. As e Flash-replacement type MRAM approaches mass production, there is an increasing demand for non-volatile RAM(nv RAM) technologies that offer fast write speed and high endurance. In this work, we demonstrate highly reliable 4 Mb nv RAM type MRAM suitable for industry and auto grade-1 applications. This nv RAM features retention over 10 years at 125 ℃, endurance of 1 × 10^(12)cycles with 20 ns write speed, making it ideal for applications requiring both high speed and broad temperature ranges. By employing innovative MTJ materials, process engineering, and a co-optimization of process and design, reliable read and write performance across the full temperature range between -40 to 125 ℃, and array yield that meets sub-1 ppm error rate was significantly improved from 0 to above 95%, a concrete step toward applications.展开更多
文摘NVRAM(非易失性随机存储器)因其具有读写速度快、数据非易失的特点,常用来存取重要数据。在读写速度要求不高的场合,为降低成本,可用现有的Flash存储器来代替NVRAM,这需要提供NVRAM To Flash驱动。但现有的驱动效率不高,写数据速度太慢,给使用者带来不便。基于Vx-W orks操作系统,提出一种新的NVRAM To Flash驱动程序设计方法,该方法实现了NVRAM的两个接口函数,通过减少擦除Flash次数,提高了数据读写速度。
基金supported by National Science and Technology Major Project (2020AAA0109003)the support from Hangzhou Innovation Team Program (TD2022018)。
文摘Magnetic tunnel junction(MTJ) based spin transfer torque magnetic random access memory(STT-MRAM) has been gaining tremendous momentum in high performance microcontroller(MCU) applications. As e Flash-replacement type MRAM approaches mass production, there is an increasing demand for non-volatile RAM(nv RAM) technologies that offer fast write speed and high endurance. In this work, we demonstrate highly reliable 4 Mb nv RAM type MRAM suitable for industry and auto grade-1 applications. This nv RAM features retention over 10 years at 125 ℃, endurance of 1 × 10^(12)cycles with 20 ns write speed, making it ideal for applications requiring both high speed and broad temperature ranges. By employing innovative MTJ materials, process engineering, and a co-optimization of process and design, reliable read and write performance across the full temperature range between -40 to 125 ℃, and array yield that meets sub-1 ppm error rate was significantly improved from 0 to above 95%, a concrete step toward applications.
