Magnetoresistive random access memory(MRAM)is a promising non-volatile memory technology that can be utilized as an energy and space-efficient storage and computing solution,particularly in cache functions within circ...Magnetoresistive random access memory(MRAM)is a promising non-volatile memory technology that can be utilized as an energy and space-efficient storage and computing solution,particularly in cache functions within circuits.Although MRAM has achieved mass production,its manufacturing process still remains challenging,resulting in only a few semiconductor companies dominating its production.In this review,we delve into the materials,processes,and devices used in MRAM,focusing on both the widely adopted spin transfer torque MRAM and the next-generation spin-orbit torque MRAM.We provide an overview of their operational mechanisms and manufacturing technologies.Furthermore,we outline the major hurdles faced in MRAM manufacturing and propose potential solutions in detail.Then,the applications of MRAM in artificial intelligent hardware are introduced.Finally,we present an outlook on the future development and applications of MRAM.展开更多
Magnetic tunnel junction(MTJ) based spin transfer torque magnetic random access memory(STT-MRAM) has been gaining tremendous momentum in high performance microcontroller(MCU) applications. As e Flash-replacement type ...Magnetic tunnel junction(MTJ) based spin transfer torque magnetic random access memory(STT-MRAM) has been gaining tremendous momentum in high performance microcontroller(MCU) applications. As e Flash-replacement type MRAM approaches mass production, there is an increasing demand for non-volatile RAM(nv RAM) technologies that offer fast write speed and high endurance. In this work, we demonstrate highly reliable 4 Mb nv RAM type MRAM suitable for industry and auto grade-1 applications. This nv RAM features retention over 10 years at 125 ℃, endurance of 1 × 10^(12)cycles with 20 ns write speed, making it ideal for applications requiring both high speed and broad temperature ranges. By employing innovative MTJ materials, process engineering, and a co-optimization of process and design, reliable read and write performance across the full temperature range between -40 to 125 ℃, and array yield that meets sub-1 ppm error rate was significantly improved from 0 to above 95%, a concrete step toward applications.展开更多
由于传统的磁盘甚至已广泛应用的Flash固态盘已无法很好地满足当前对存储器在集成度、读写速度、可靠性方面的需求,故须积极寻找新一代存储介质尝试与当前存储器混合使用甚至替代之.而磁阻随机存储器(magnetic random access memory,MR...由于传统的磁盘甚至已广泛应用的Flash固态盘已无法很好地满足当前对存储器在集成度、读写速度、可靠性方面的需求,故须积极寻找新一代存储介质尝试与当前存储器混合使用甚至替代之.而磁阻随机存储器(magnetic random access memory,MRAM)作为一种非易失性存储器,拥有静态随机存储器(satic random access memory,SRAM)的高速读取写入能力,以及动态随机存储器(dynamic random access memory,DRAM)的高集成度,同时比DRAM更低的能耗,并具有无限的读写次数,这些优秀的特性使得MRAM拥有很好的潜力成为下一代主流存储介质.为了对MRAM的读写性能、功耗等有深入的理解,设计并实现了一个MRAM测试平台,完成对MRAM读写性能测试和特性数据采集.该测试平台主要由MRAM控制器设计、MRAM特性数据采集、读写性能测试3个方面组成,由MRAM控制器对MRAM芯片进行读写完成读写性能测试,采集MRAM在读、写、空闲等状态下的特性数据.实验表明,MRAM具有良好的读写性能和低功耗,有条件成为下一代主流存储介质.展开更多
经常有人将磁阻RAM（MRAM，Magnetoresistive Random Access Memory）称作是非易失性存储器（nvRAM，Non—Volatile RAM）的关键性技术。作为一项非易失性存储器技术，MRAM可以在掉电时保留数据，并且不需要定期刷新。MRAM利用磁性材料...经常有人将磁阻RAM（MRAM，Magnetoresistive Random Access Memory）称作是非易失性存储器（nvRAM，Non—Volatile RAM）的关键性技术。作为一项非易失性存储器技术，MRAM可以在掉电时保留数据，并且不需要定期刷新。MRAM利用磁性材料和传统的硅电路在单个器件中提供了SRAM的高速度和闪存的非易失性，它的寿命几乎是没有限制的。MRAM器件可以用于高速缓冲器、配置内存和其官要求高辣、耐用和非易失性的商业应用。展开更多
利用磁阻效应的非易失性存储器MRAM最近开始复苏，全球很多存储器厂商正在加速开发采用自旋注入反磁化方式的新型MRAM（见图1）。在与磁存储相关的国际会议一第52届磁学与磁性材料年会（52nd Annual Conference on Magnetism and Magnet...利用磁阻效应的非易失性存储器MRAM最近开始复苏，全球很多存储器厂商正在加速开发采用自旋注入反磁化方式的新型MRAM（见图1）。在与磁存储相关的国际会议一第52届磁学与磁性材料年会（52nd Annual Conference on Magnetism and Magnetic Materials，MMM）上，多家厂商相继发布了多种技术方案，可以将自旋注入MRAM的制造工艺提升到45nm-32nm，展开更多
长久以来,传统机械磁盘的读写速率低是计算机系统不容忽视的问题,尤其是正值大数据技术飞速发展的时代,计算与存储之间的性能差异越来越明显,读写瓶颈问题也愈发严重.MRAM(Magnetic Random Access Memory)具有非易失性、读写速度快和擦...长久以来,传统机械磁盘的读写速率低是计算机系统不容忽视的问题,尤其是正值大数据技术飞速发展的时代,计算与存储之间的性能差异越来越明显,读写瓶颈问题也愈发严重.MRAM(Magnetic Random Access Memory)具有非易失性、读写速度快和擦写次数无限制等特点,可以有效地缓解存储瓶颈的问题,因而成为了研究热点.基于MRAM建立一套内存数据组织结构,并研究异构副本的存储策略具有一定的研究意义.在Ceph分布式文件系统的基础上,设计出一套基于MRAM的内存管理模块,并将Ceph系统的磁盘-磁盘(主从副本均存储在磁盘上)多副本存储方式修改成MRAM-磁盘(主副本存储在MRAM上,从副本存储在磁盘上)的异构副本存储策略.在详细介绍了异构副本方案的同时,也对其进行了相应的性能测试和分析.展开更多
基金supported in part by the Youth Innovation Promotion Association of Chinese Academy of Sciences(CAS)under Grant 2020118Beijing Nova Program under Grant 20230484358Beijing Superstring Academy of Memory Technology:under Grant No.E2DF06X003。
文摘Magnetoresistive random access memory(MRAM)is a promising non-volatile memory technology that can be utilized as an energy and space-efficient storage and computing solution,particularly in cache functions within circuits.Although MRAM has achieved mass production,its manufacturing process still remains challenging,resulting in only a few semiconductor companies dominating its production.In this review,we delve into the materials,processes,and devices used in MRAM,focusing on both the widely adopted spin transfer torque MRAM and the next-generation spin-orbit torque MRAM.We provide an overview of their operational mechanisms and manufacturing technologies.Furthermore,we outline the major hurdles faced in MRAM manufacturing and propose potential solutions in detail.Then,the applications of MRAM in artificial intelligent hardware are introduced.Finally,we present an outlook on the future development and applications of MRAM.
基金supported by National Science and Technology Major Project (2020AAA0109003)the support from Hangzhou Innovation Team Program (TD2022018)。
文摘Magnetic tunnel junction(MTJ) based spin transfer torque magnetic random access memory(STT-MRAM) has been gaining tremendous momentum in high performance microcontroller(MCU) applications. As e Flash-replacement type MRAM approaches mass production, there is an increasing demand for non-volatile RAM(nv RAM) technologies that offer fast write speed and high endurance. In this work, we demonstrate highly reliable 4 Mb nv RAM type MRAM suitable for industry and auto grade-1 applications. This nv RAM features retention over 10 years at 125 ℃, endurance of 1 × 10^(12)cycles with 20 ns write speed, making it ideal for applications requiring both high speed and broad temperature ranges. By employing innovative MTJ materials, process engineering, and a co-optimization of process and design, reliable read and write performance across the full temperature range between -40 to 125 ℃, and array yield that meets sub-1 ppm error rate was significantly improved from 0 to above 95%, a concrete step toward applications.
文摘由于传统的磁盘甚至已广泛应用的Flash固态盘已无法很好地满足当前对存储器在集成度、读写速度、可靠性方面的需求,故须积极寻找新一代存储介质尝试与当前存储器混合使用甚至替代之.而磁阻随机存储器(magnetic random access memory,MRAM)作为一种非易失性存储器,拥有静态随机存储器(satic random access memory,SRAM)的高速读取写入能力,以及动态随机存储器(dynamic random access memory,DRAM)的高集成度,同时比DRAM更低的能耗,并具有无限的读写次数,这些优秀的特性使得MRAM拥有很好的潜力成为下一代主流存储介质.为了对MRAM的读写性能、功耗等有深入的理解,设计并实现了一个MRAM测试平台,完成对MRAM读写性能测试和特性数据采集.该测试平台主要由MRAM控制器设计、MRAM特性数据采集、读写性能测试3个方面组成,由MRAM控制器对MRAM芯片进行读写完成读写性能测试,采集MRAM在读、写、空闲等状态下的特性数据.实验表明,MRAM具有良好的读写性能和低功耗,有条件成为下一代主流存储介质.
文摘经常有人将磁阻RAM（MRAM，Magnetoresistive Random Access Memory）称作是非易失性存储器（nvRAM，Non—Volatile RAM）的关键性技术。作为一项非易失性存储器技术，MRAM可以在掉电时保留数据，并且不需要定期刷新。MRAM利用磁性材料和传统的硅电路在单个器件中提供了SRAM的高速度和闪存的非易失性，它的寿命几乎是没有限制的。MRAM器件可以用于高速缓冲器、配置内存和其官要求高辣、耐用和非易失性的商业应用。
文摘利用磁阻效应的非易失性存储器MRAM最近开始复苏，全球很多存储器厂商正在加速开发采用自旋注入反磁化方式的新型MRAM（见图1）。在与磁存储相关的国际会议一第52届磁学与磁性材料年会（52nd Annual Conference on Magnetism and Magnetic Materials，MMM）上，多家厂商相继发布了多种技术方案，可以将自旋注入MRAM的制造工艺提升到45nm-32nm，
文摘长久以来,传统机械磁盘的读写速率低是计算机系统不容忽视的问题,尤其是正值大数据技术飞速发展的时代,计算与存储之间的性能差异越来越明显,读写瓶颈问题也愈发严重.MRAM(Magnetic Random Access Memory)具有非易失性、读写速度快和擦写次数无限制等特点,可以有效地缓解存储瓶颈的问题,因而成为了研究热点.基于MRAM建立一套内存数据组织结构,并研究异构副本的存储策略具有一定的研究意义.在Ceph分布式文件系统的基础上,设计出一套基于MRAM的内存管理模块,并将Ceph系统的磁盘-磁盘(主从副本均存储在磁盘上)多副本存储方式修改成MRAM-磁盘(主副本存储在MRAM上,从副本存储在磁盘上)的异构副本存储策略.在详细介绍了异构副本方案的同时,也对其进行了相应的性能测试和分析.
