This work applies stress tensors inversions and quantification of fracture patterns along the Mesa de Los Santos, in the Eastern Cordillera of Colombia, to better understand the potential fluid flow. It thus contribut...This work applies stress tensors inversions and quantification of fracture patterns along the Mesa de Los Santos, in the Eastern Cordillera of Colombia, to better understand the potential fluid flow. It thus contributes to the conceptual hydrogeological model. The area was subdivided into three blocks, separated by the NW Potreros and the Los Santos faults, having minor inner faults of different orientations. This separation facilitates the analysis of the fractures measured in the field, which in general show high dip angles and a conjugate geometry in the northern block, tension fractures(Mode I) in the central block, and a random distribution in the southwestern block. WinTensor treatment of slickensides yielded a maximum horizontal stress(SHmax) of 111o, which coincides with the WNW-ESE tensor observed from the conjugate and tension joints. We then used Frac Pa Q to generate interpolation maps of fracture intensity and density. The maps show the highest values in the central block and the lowest in the northern block,where the precipitation is higher, causing intensive rock weathering and homogenization of the fracture planes. Although the highest values of connectivity by line are found to the south of the mesa, we suggest the possibility of greater flow from the recharge zone(NE) along bedding planes and open NW-SE fractures.展开更多
The effect of mesa size on th e thermal characteristics of etched mesa vertical-cavity surface-emitting lase rs(VCSELs) is studied. The numerical results show that the mesa size of the top mirror strongly influences t...The effect of mesa size on th e thermal characteristics of etched mesa vertical-cavity surface-emitting lase rs(VCSELs) is studied. The numerical results show that the mesa size of the top mirror strongly influences the temperature distribution inside the etched mesa V CSEL. Under a certain driving voltage, with decreasing mesa size, the location o f the maximal temperature moves towards the p-contact metal, the temperature in the core region of the active layer rises greatly, and the thermal characterist ics of the etched mesa VCSELs will deteriorate.展开更多
The Loess Plateau, located in northern China, has a significant impact on the climate and ecosystem evolvement over the East Asian continent. In this paper, the preliminary autumn daily characteristics of land surface...The Loess Plateau, located in northern China, has a significant impact on the climate and ecosystem evolvement over the East Asian continent. In this paper, the preliminary autumn daily characteristics of land surface energy and water exchange over the Chinese Loess Plateau mesa region are evaluated by using data collected during the Loess Plateau land-atmosphere interaction pilot experiment （LOPEX04）, which was conducted from 25 August to 12 September 2004 near Pingliang city, Gansu Province of China. The experiment was carried out in a region with a typical landscape of the Chinese Loess Plateau, known as ＂loess mesa＂. The experiment＇s field land utilizations were cornfield and fallow farmland, with the fallow field later used for rotating winter wheat. The autumn daily characteristics of heat and water exchange evidently differed between the mesa cornfield and fallow, and the imbalance term of the surface energy was large. This is discussed in terms of sampling errors in the flux observations-footprint; energy storage terms of soil and vegetation layers; contribution from air advections; and low and high frequency loss of turbulent fluxes and instruments bias. Comparison of energy components between the mesa cornfield and the lowland cornfield did not reveal any obvious difference. Inadequacies of the field observation equipment and experimental design emerged during the study, and some new research topics have emerged from this pilot experiment for future investigation.展开更多
The effect of the mesa configuration on the reverse breakdown characteristic of a SiC PiN rectifier for high-voltage applications is analyzed in this study.Three geometrical parameters,i.e.,mesa height,mesa angle and ...The effect of the mesa configuration on the reverse breakdown characteristic of a SiC PiN rectifier for high-voltage applications is analyzed in this study.Three geometrical parameters,i.e.,mesa height,mesa angle and mesa bottom corner,are investigated by numerical simulation.The simulation results show that a deep mesa height,a small mesa angle and a smooth mesa bottom（without sub-trench） could contribute to a high breakdown voltage due to a smooth and uniform surface electric field distribution.Moreover,an optimized mesa structure without sub-trench（mesa height of 2.2 μm and mesa angle of 20°） is experimentally demonstrated.A maximum reverse blocking voltage of 4 kV and a forward voltage drop of 3.7 V at 100 A/cm^2 are obtained from the fabricated diode with a 30-μm thick N^- epi-layer,corresponding to 85% of the ideal parallel-plane value.The blocking characteristic as a function of the JTE dose is also discussed for the PiN rectifiers with and without interface charge.展开更多
We present a detailed study of a superjunction （S J） nanoscale partially narrow mesa （PNM） insulated gate bipolar transistor （IGBT） structure. This structure is created by combining the nanoscale PNM structure a...We present a detailed study of a superjunction （S J） nanoscale partially narrow mesa （PNM） insulated gate bipolar transistor （IGBT） structure. This structure is created by combining the nanoscale PNM structure and the SJ structure together. It demonstrates an ultra-low saturation voltage （Vce（sat）） and low turn-off loss （Eoff） while maintaining other device parameters. Compared with the conventional 1.2 kV trench IGBT, our simulation result shows that the gce（sat） of this structure decreases to 0.94 V, which is close to the theoretical limit of 1.2 kV IGBT, Meanwhile, the fall time decreases from 109.7 ns to 12 ns and the Eoff is down to only 37% of that of the conventional structure. The superior tradeoff characteristic between Vce（sat） and Eoff is presented owing to the nanometer level mesa width and SJ structure. Moreover, the short circuit degeneration phenomenon in the very narrow mesa structure due to the collector-induced barriers lowering （CIBL） effect is not observed in this structure. Thus, enough short circuit ability can be achieved by using wide, floating P-well technique. Based on these structure advantages, the SJ-PNM-IGBT with nanoscale mesa width indicates a potentially superior overall performance towards the IGBT parameter limit.展开更多
As one of the prominent landforms in the Zhurong landing region,mesas are geological features with flat tops and steep marginal cliffs.The mesas are widely distributed along the dichotomy boundary.There are various in...As one of the prominent landforms in the Zhurong landing region,mesas are geological features with flat tops and steep marginal cliffs.The mesas are widely distributed along the dichotomy boundary.There are various interpreted origins proposed for the mesas,such as the erosion of sedimentary layers,tuyas eruptions,or surface collapse due to the catastrophic release of groundwater.We investigate the detailed morphological characteristics of the mesas on the Late Hesperian Lowland unit within the Utopia Planitia.We observe morphological evidence for both the ice-bearing interior mesas and the sedimentary origin,including(1)small pits on the crater wall and mesa cliff formed by the release of volatiles like ice;(2)lobate flows at the base of mesas formed by the melting of subsurface ice;(3)layered mesas indicating sedimentary origin;(4)grooves on the top surface of mesas formed by the volumetric compaction of sedimentary deposits.The results indicate that the mesas in the study area are formed by the erosion of sedimentary layers and representative of the Noachian oceanic sediments.We propose an evolutionary model for the mesas.This study will provide some insights into future research of ancient ocean hypothesis of Mars and interesting targets for the exploration of the Zhurong rover.展开更多
Background: Obesity is associated with higher end-stage renal disease incidence, but associations with earlier forms of kidney disease remain incompletely characterized. Methods: We studied the association of body mas...Background: Obesity is associated with higher end-stage renal disease incidence, but associations with earlier forms of kidney disease remain incompletely characterized. Methods: We studied the association of body mass index (BMI), waist circumference (WC), and waist-to-hip ratio (WHR) with rapid kidney function decline and incident chronic kidney disease in 4573 non-diabetic adults with eGFR ≥ 60 ml/min/1.73m2 at baseline from longitudinal Multi-Ethnic Study of Atherosclerosis cohort. Kidney function was estimated by creatinine and cystatin C. Multivariate analysis was adjusted for age, race, baseline eGFR, and hypertension. Results: Mean age was 60 years old, BMI 28 kg/m2, baseline eGFRCr 82 and eGFRCys 95 ml/min/1.73m2. Over 5 years of follow up, 25% experienced rapid decline in renal function by eGFRCr and 22% by eGFRCys. Incident chronic kidney disease (CKD) developed in 3.3% by eGFRCys, 11% by eGFRCr, and 2.4% by both makers. Compared to persons with BMI 25, overweight (BMI 25 - 30) persons had the?lowest risk of rapid decline by eGFRCr (0.84, 0.71 - 0.99). In contrast, higher BMI categories were associated with stepwise higher odds of rapid decline by eGFRCys, but remained significant only when BMI ≥ 35 kg/m2 (1.87, 1.41 - 2.48). Associations of BMI with incident CKD were insignificant after adjustment. Large WC and WHR were associated with increased risk of rapid decline only by eGFRCys, and of incident CKD only when defined by both filtration markers. Conclusions: Obesity may be a risk factor for kidney function decline, but associations vary by filtration marker used.展开更多
GaN/InGaN lighting-emitting diodes with different mesa structures are studied. The current-voltage characteristics, light output power, luminous efficiency, and peak wavelength of the GaN/InGaN lighting-emitting diode...GaN/InGaN lighting-emitting diodes with different mesa structures are studied. The current-voltage characteristics, light output power, luminous efficiency, and peak wavelength of the GaN/InGaN lighting-emitting diodes with different mesa patterns are compared. It shows that the current-voltage characteristics of the chips with more mesa areas are im- proved greatly by reducing the current crowding. With higher injection current the light output powers of GaN-based LED with more mesa areas are enhanced. And the chips with more P-electrode area have a smaller red shift and a little bit blue shift due to the reduction of the current crowding.展开更多
To suppress the electric field crowding at sidewall and improve the detection sensitivity of the AlGaN separate absorption and multiplication(SAM)avalanche photodiodes(APDs),we propose the new AlGaN APDs structure com...To suppress the electric field crowding at sidewall and improve the detection sensitivity of the AlGaN separate absorption and multiplication(SAM)avalanche photodiodes(APDs),we propose the new AlGaN APDs structure combining a large-area mesa with a field plate(FP).The simulated results show that the proposed AlGaN APDs exhibit a significant increase in avalanche gain,about two orders of magnitude,compared to their counterparts without FP structure,which is attributed to the suppression of electric field crowding at sidewall of multiplication layer and the reduction of the maximum electric field at the p-type GaN sidewall in p-n depletion region.Meanwhile,the APDs can produce an obviously enhanced photocurrent due to the increase in cross sectional area of multiplication region.展开更多
A low hole injection efficiency for InGaN/GaN micro-light-emitting diodes(μLEDs) has become one of the main bottlenecks affecting the improvement of the external quantum efficiency(EQE) and the optical power. In this...A low hole injection efficiency for InGaN/GaN micro-light-emitting diodes(μLEDs) has become one of the main bottlenecks affecting the improvement of the external quantum efficiency(EQE) and the optical power. In this work, we propose and fabricate a polarization mismatched p-GaN/p-Al_(0.25)Ga_(0.75)N/p-GaN structure for 445 nm GaN-based μLEDs with the size of 40 × 40 μm^(2), which serves as the hole injection layer. The polarization-induced electric field in the p-GaN/p-Al_(0.25)Ga_(0.75)N/p-GaN structure provides holes with more energy and can facilitate the non-equilibrium holes to transport into the active region for radiative recombination. Meanwhile, a secondary etched mesa for μLEDs is also designed, which can effectively keep the holes apart from the defected region of the mesa sidewalls, and the surface nonradiative recombination can be suppressed. Therefore, the proposed μLED with the secondary etched mesa and the p-GaN/p-Al_(0.25)Ga_(0.75)N/p-GaN structure has the enhanced EQE and the improved optical power density when compared with the μLED without such designs.展开更多
瞬态电压抑制器(Transient Voltage Suppressor,TVS)作为常用的防护型器件具有吸收功率高、响应速度快等特点。目前,雪崩型SiC-TVS器件尚缺乏合理的终端设计,以常用N型衬底为基础的外延P+N-N+/Mesa结构SiC-TVS器件在反偏P+/N-结边缘处...瞬态电压抑制器(Transient Voltage Suppressor,TVS)作为常用的防护型器件具有吸收功率高、响应速度快等特点。目前,雪崩型SiC-TVS器件尚缺乏合理的终端设计,以常用N型衬底为基础的外延P+N-N+/Mesa结构SiC-TVS器件在反偏P+/N-结边缘处易形成负斜角边缘结构,导致器件因边缘电场集中而提前击穿,严重影响器件的工作可靠性。本文基于Sentaurus TCAD数值仿真,研究了一种雪崩型SiC-TVS器件结构,该结构采用离子注入形成大曲率半径的U型平面PN结,并将其边缘与Mesa沟槽终端顶点在器件上表面以距离x进行耦合设计,使器件表面形成正斜角终端,有效地避免了边缘电场集中效应。同时x的选取具有一定余量,在工艺上较易实现。最后利用该结构仿真得到了响应时间约5.3ns、钳位因子达到1.01的雪崩型SiC-TVS器件,仿真结果表明新型耦合结构器件对异常瞬态浪涌信号表现出良好的抑制效果。展开更多
基金the financial backing provided by the Universidad Industrial de Santander through project 2534 “Estudio Integral del Agua en la Mesa de Los Santos”。
文摘This work applies stress tensors inversions and quantification of fracture patterns along the Mesa de Los Santos, in the Eastern Cordillera of Colombia, to better understand the potential fluid flow. It thus contributes to the conceptual hydrogeological model. The area was subdivided into three blocks, separated by the NW Potreros and the Los Santos faults, having minor inner faults of different orientations. This separation facilitates the analysis of the fractures measured in the field, which in general show high dip angles and a conjugate geometry in the northern block, tension fractures(Mode I) in the central block, and a random distribution in the southwestern block. WinTensor treatment of slickensides yielded a maximum horizontal stress(SHmax) of 111o, which coincides with the WNW-ESE tensor observed from the conjugate and tension joints. We then used Frac Pa Q to generate interpolation maps of fracture intensity and density. The maps show the highest values in the central block and the lowest in the northern block,where the precipitation is higher, causing intensive rock weathering and homogenization of the fracture planes. Although the highest values of connectivity by line are found to the south of the mesa, we suggest the possibility of greater flow from the recharge zone(NE) along bedding planes and open NW-SE fractures.
基金National High Technology Research and Development Programof China(2001AA312180)
文摘The effect of mesa size on th e thermal characteristics of etched mesa vertical-cavity surface-emitting lase rs(VCSELs) is studied. The numerical results show that the mesa size of the top mirror strongly influences the temperature distribution inside the etched mesa V CSEL. Under a certain driving voltage, with decreasing mesa size, the location o f the maximal temperature moves towards the p-contact metal, the temperature in the core region of the active layer rises greatly, and the thermal characterist ics of the etched mesa VCSELs will deteriorate.
文摘The Loess Plateau, located in northern China, has a significant impact on the climate and ecosystem evolvement over the East Asian continent. In this paper, the preliminary autumn daily characteristics of land surface energy and water exchange over the Chinese Loess Plateau mesa region are evaluated by using data collected during the Loess Plateau land-atmosphere interaction pilot experiment （LOPEX04）, which was conducted from 25 August to 12 September 2004 near Pingliang city, Gansu Province of China. The experiment was carried out in a region with a typical landscape of the Chinese Loess Plateau, known as ＂loess mesa＂. The experiment＇s field land utilizations were cornfield and fallow farmland, with the fallow field later used for rotating winter wheat. The autumn daily characteristics of heat and water exchange evidently differed between the mesa cornfield and fallow, and the imbalance term of the surface energy was large. This is discussed in terms of sampling errors in the flux observations-footprint; energy storage terms of soil and vegetation layers; contribution from air advections; and low and high frequency loss of turbulent fluxes and instruments bias. Comparison of energy components between the mesa cornfield and the lowland cornfield did not reveal any obvious difference. Inadequacies of the field observation equipment and experimental design emerged during the study, and some new research topics have emerged from this pilot experiment for future investigation.
基金supported by the State Key Program of the National Natural Science Foundation of China(Grant No.61234006)the Open Foundation of the State Key Laboratory of Electronic Thin Films and Integrated Devices,China(Grant No.KFJJ201301)the National Science and Technology Major Project of the Ministry of Science and Technology,China(Grant No.2013ZX02305-003)
文摘The effect of the mesa configuration on the reverse breakdown characteristic of a SiC PiN rectifier for high-voltage applications is analyzed in this study.Three geometrical parameters,i.e.,mesa height,mesa angle and mesa bottom corner,are investigated by numerical simulation.The simulation results show that a deep mesa height,a small mesa angle and a smooth mesa bottom（without sub-trench） could contribute to a high breakdown voltage due to a smooth and uniform surface electric field distribution.Moreover,an optimized mesa structure without sub-trench（mesa height of 2.2 μm and mesa angle of 20°） is experimentally demonstrated.A maximum reverse blocking voltage of 4 kV and a forward voltage drop of 3.7 V at 100 A/cm^2 are obtained from the fabricated diode with a 30-μm thick N^- epi-layer,corresponding to 85% of the ideal parallel-plane value.The blocking characteristic as a function of the JTE dose is also discussed for the PiN rectifiers with and without interface charge.
基金Project supported by the National Natural Science Foundation of China(Grant No.61404161)
文摘We present a detailed study of a superjunction （S J） nanoscale partially narrow mesa （PNM） insulated gate bipolar transistor （IGBT） structure. This structure is created by combining the nanoscale PNM structure and the SJ structure together. It demonstrates an ultra-low saturation voltage （Vce（sat）） and low turn-off loss （Eoff） while maintaining other device parameters. Compared with the conventional 1.2 kV trench IGBT, our simulation result shows that the gce（sat） of this structure decreases to 0.94 V, which is close to the theoretical limit of 1.2 kV IGBT, Meanwhile, the fall time decreases from 109.7 ns to 12 ns and the Eoff is down to only 37% of that of the conventional structure. The superior tradeoff characteristic between Vce（sat） and Eoff is presented owing to the nanometer level mesa width and SJ structure. Moreover, the short circuit degeneration phenomenon in the very narrow mesa structure due to the collector-induced barriers lowering （CIBL） effect is not observed in this structure. Thus, enough short circuit ability can be achieved by using wide, floating P-well technique. Based on these structure advantages, the SJ-PNM-IGBT with nanoscale mesa width indicates a potentially superior overall performance towards the IGBT parameter limit.
基金supported by the Strategic Priority Research Program of the Chinese Academy of Sciences(No.XDB 41000000)the National Natural Science Foundation of China(Nos.42273041,41830214)the Preresearch Project on Civil Aerospace Technologies of CNSA(No.D020101)。
文摘As one of the prominent landforms in the Zhurong landing region,mesas are geological features with flat tops and steep marginal cliffs.The mesas are widely distributed along the dichotomy boundary.There are various interpreted origins proposed for the mesas,such as the erosion of sedimentary layers,tuyas eruptions,or surface collapse due to the catastrophic release of groundwater.We investigate the detailed morphological characteristics of the mesas on the Late Hesperian Lowland unit within the Utopia Planitia.We observe morphological evidence for both the ice-bearing interior mesas and the sedimentary origin,including(1)small pits on the crater wall and mesa cliff formed by the release of volatiles like ice;(2)lobate flows at the base of mesas formed by the melting of subsurface ice;(3)layered mesas indicating sedimentary origin;(4)grooves on the top surface of mesas formed by the volumetric compaction of sedimentary deposits.The results indicate that the mesas in the study area are formed by the erosion of sedimentary layers and representative of the Noachian oceanic sediments.We propose an evolutionary model for the mesas.This study will provide some insights into future research of ancient ocean hypothesis of Mars and interesting targets for the exploration of the Zhurong rover.
文摘Background: Obesity is associated with higher end-stage renal disease incidence, but associations with earlier forms of kidney disease remain incompletely characterized. Methods: We studied the association of body mass index (BMI), waist circumference (WC), and waist-to-hip ratio (WHR) with rapid kidney function decline and incident chronic kidney disease in 4573 non-diabetic adults with eGFR ≥ 60 ml/min/1.73m2 at baseline from longitudinal Multi-Ethnic Study of Atherosclerosis cohort. Kidney function was estimated by creatinine and cystatin C. Multivariate analysis was adjusted for age, race, baseline eGFR, and hypertension. Results: Mean age was 60 years old, BMI 28 kg/m2, baseline eGFRCr 82 and eGFRCys 95 ml/min/1.73m2. Over 5 years of follow up, 25% experienced rapid decline in renal function by eGFRCr and 22% by eGFRCys. Incident chronic kidney disease (CKD) developed in 3.3% by eGFRCys, 11% by eGFRCr, and 2.4% by both makers. Compared to persons with BMI 25, overweight (BMI 25 - 30) persons had the?lowest risk of rapid decline by eGFRCr (0.84, 0.71 - 0.99). In contrast, higher BMI categories were associated with stepwise higher odds of rapid decline by eGFRCys, but remained significant only when BMI ≥ 35 kg/m2 (1.87, 1.41 - 2.48). Associations of BMI with incident CKD were insignificant after adjustment. Large WC and WHR were associated with increased risk of rapid decline only by eGFRCys, and of incident CKD only when defined by both filtration markers. Conclusions: Obesity may be a risk factor for kidney function decline, but associations vary by filtration marker used.
文摘GaN/InGaN lighting-emitting diodes with different mesa structures are studied. The current-voltage characteristics, light output power, luminous efficiency, and peak wavelength of the GaN/InGaN lighting-emitting diodes with different mesa patterns are compared. It shows that the current-voltage characteristics of the chips with more mesa areas are im- proved greatly by reducing the current crowding. With higher injection current the light output powers of GaN-based LED with more mesa areas are enhanced. And the chips with more P-electrode area have a smaller red shift and a little bit blue shift due to the reduction of the current crowding.
基金the Natural Science Research Project of Anhui University,China(Grant No.KJ2019A0644)the National Natural Science Foundation of China(Grant Nos.61634002 and 61804089)+3 种基金the Natural Science Alliance Foundation,China(Grant No.U1830109)the Natural Science Foundation of Anhui Province,China(Grant No.1708085MF149)the Chuzhou University Research Project,China(Grant No.zrjz2019002)the Project of the Higher Educational and Technology Program of Shandong Province,China(Grant No.J16LN04).
文摘To suppress the electric field crowding at sidewall and improve the detection sensitivity of the AlGaN separate absorption and multiplication(SAM)avalanche photodiodes(APDs),we propose the new AlGaN APDs structure combining a large-area mesa with a field plate(FP).The simulated results show that the proposed AlGaN APDs exhibit a significant increase in avalanche gain,about two orders of magnitude,compared to their counterparts without FP structure,which is attributed to the suppression of electric field crowding at sidewall of multiplication layer and the reduction of the maximum electric field at the p-type GaN sidewall in p-n depletion region.Meanwhile,the APDs can produce an obviously enhanced photocurrent due to the increase in cross sectional area of multiplication region.
基金supported in part by the National Natural Science Foundation of China (Grant Nos.62074050 and 61975051)Research Fund by State Key Laboratory of Reliability and Intelligence of Electrical Equipment,Hebei University of Technology (Grant Nos.EERI PI2020008 and EERI_PD2021012)Joint Research Project for Tunghsu Group and Hebei University of Technology (Grant No.HI1909)。
文摘A low hole injection efficiency for InGaN/GaN micro-light-emitting diodes(μLEDs) has become one of the main bottlenecks affecting the improvement of the external quantum efficiency(EQE) and the optical power. In this work, we propose and fabricate a polarization mismatched p-GaN/p-Al_(0.25)Ga_(0.75)N/p-GaN structure for 445 nm GaN-based μLEDs with the size of 40 × 40 μm^(2), which serves as the hole injection layer. The polarization-induced electric field in the p-GaN/p-Al_(0.25)Ga_(0.75)N/p-GaN structure provides holes with more energy and can facilitate the non-equilibrium holes to transport into the active region for radiative recombination. Meanwhile, a secondary etched mesa for μLEDs is also designed, which can effectively keep the holes apart from the defected region of the mesa sidewalls, and the surface nonradiative recombination can be suppressed. Therefore, the proposed μLED with the secondary etched mesa and the p-GaN/p-Al_(0.25)Ga_(0.75)N/p-GaN structure has the enhanced EQE and the improved optical power density when compared with the μLED without such designs.
文摘瞬态电压抑制器(Transient Voltage Suppressor,TVS)作为常用的防护型器件具有吸收功率高、响应速度快等特点。目前,雪崩型SiC-TVS器件尚缺乏合理的终端设计,以常用N型衬底为基础的外延P+N-N+/Mesa结构SiC-TVS器件在反偏P+/N-结边缘处易形成负斜角边缘结构,导致器件因边缘电场集中而提前击穿,严重影响器件的工作可靠性。本文基于Sentaurus TCAD数值仿真,研究了一种雪崩型SiC-TVS器件结构,该结构采用离子注入形成大曲率半径的U型平面PN结,并将其边缘与Mesa沟槽终端顶点在器件上表面以距离x进行耦合设计,使器件表面形成正斜角终端,有效地避免了边缘电场集中效应。同时x的选取具有一定余量,在工艺上较易实现。最后利用该结构仿真得到了响应时间约5.3ns、钳位因子达到1.01的雪崩型SiC-TVS器件,仿真结果表明新型耦合结构器件对异常瞬态浪涌信号表现出良好的抑制效果。
