With the continuous scaling of ferroelectric memories to below 5 nm,material and integration challenges that were previously manageable are now becoming increasingly prominent[1].At atomic thicknesses,conventional fer...With the continuous scaling of ferroelectric memories to below 5 nm,material and integration challenges that were previously manageable are now becoming increasingly prominent[1].At atomic thicknesses,conventional ferroelectric oxides suffer from depolarization fields,interfacial charge trapping and structural non-uniformity,leading to rapid performance degradation and poor device-to-device consistency[2].These issues have become a critical bottleneck for ferroelectric field-effect transistors(FeFETs),which are widely regarded as promising building blocks for low-power embedded non-volatile memory and computing-in-memory architectures[3-5].展开更多
The paper proposes a low power non-volatile baseband processor with wake-up identification(WUI) receiver for LR-WPAN transceiver.It consists of WUI receiver,main receiver,transmitter,non-volatile memory(NVM) and power...The paper proposes a low power non-volatile baseband processor with wake-up identification(WUI) receiver for LR-WPAN transceiver.It consists of WUI receiver,main receiver,transmitter,non-volatile memory(NVM) and power management module.The main receiver adopts a unified simplified synchronization method and channel codec with proactive Reed-Solomon Bypass technique,which increases the robustness and energy efficiency of receiver.The WUI receiver specifies the communication node and wakes up the transceiver to reduce average power consumption of the transceiver.The embedded NVM can backup/restore the states information of processor that avoids the loss of the state information caused by power failure and reduces the unnecessary power of repetitive computation when the processor is waked up from power down mode.The baseband processor is designed and verified on a FPGA board.The simulated power consumption of processor is 5.1uW for transmitting and 28.2μW for receiving.The WUI receiver technique reduces the average power consumption of transceiver remarkably.If the transceiver operates 30 seconds in every 15 minutes,the average power consumption of the transceiver can be reduced by two orders of magnitude.The NVM avoids the loss of the state information caused by power failure and energy waste caused by repetitive computation.展开更多
A low-voltage sense amplifier with reference current generator utilizing two-stage operational amplifier clamp structure for flash memory is presented in this paper,capable of operating with minimum supply voltage at1...A low-voltage sense amplifier with reference current generator utilizing two-stage operational amplifier clamp structure for flash memory is presented in this paper,capable of operating with minimum supply voltage at1 V.A new reference current generation circuit composed of a reference cell and a two-stage operational amplifier clamping the drain pole of the reference cell is used to generate the reference current,which avoids the threshold limitation caused by current mirror transistor in the traditional sense amplifier.A novel reference voltage generation circuit using dummy bit-line structure without pull-down current is also adopted,which not only improves the sense window enhancing read precision but also saves power consumption.The sense amplifier was implemented in a flash realized in 90 run flash technology.Experimental results show the access time is 14.7 ns with power supply of 1.2 V and slow corner at 125℃.展开更多
基金financial support from the Beijing Natural Science Foundation-Xiaomi Innovation Joint Fund(L233009)。
文摘With the continuous scaling of ferroelectric memories to below 5 nm,material and integration challenges that were previously manageable are now becoming increasingly prominent[1].At atomic thicknesses,conventional ferroelectric oxides suffer from depolarization fields,interfacial charge trapping and structural non-uniformity,leading to rapid performance degradation and poor device-to-device consistency[2].These issues have become a critical bottleneck for ferroelectric field-effect transistors(FeFETs),which are widely regarded as promising building blocks for low-power embedded non-volatile memory and computing-in-memory architectures[3-5].
基金supported in part by the National Natural Science Foundation of China(No.61306027)
文摘The paper proposes a low power non-volatile baseband processor with wake-up identification(WUI) receiver for LR-WPAN transceiver.It consists of WUI receiver,main receiver,transmitter,non-volatile memory(NVM) and power management module.The main receiver adopts a unified simplified synchronization method and channel codec with proactive Reed-Solomon Bypass technique,which increases the robustness and energy efficiency of receiver.The WUI receiver specifies the communication node and wakes up the transceiver to reduce average power consumption of the transceiver.The embedded NVM can backup/restore the states information of processor that avoids the loss of the state information caused by power failure and reduces the unnecessary power of repetitive computation when the processor is waked up from power down mode.The baseband processor is designed and verified on a FPGA board.The simulated power consumption of processor is 5.1uW for transmitting and 28.2μW for receiving.The WUI receiver technique reduces the average power consumption of transceiver remarkably.If the transceiver operates 30 seconds in every 15 minutes,the average power consumption of the transceiver can be reduced by two orders of magnitude.The NVM avoids the loss of the state information caused by power failure and energy waste caused by repetitive computation.
基金Project supported by the National Natural Science Fundation of China(No.61376028)
文摘A low-voltage sense amplifier with reference current generator utilizing two-stage operational amplifier clamp structure for flash memory is presented in this paper,capable of operating with minimum supply voltage at1 V.A new reference current generation circuit composed of a reference cell and a two-stage operational amplifier clamping the drain pole of the reference cell is used to generate the reference current,which avoids the threshold limitation caused by current mirror transistor in the traditional sense amplifier.A novel reference voltage generation circuit using dummy bit-line structure without pull-down current is also adopted,which not only improves the sense window enhancing read precision but also saves power consumption.The sense amplifier was implemented in a flash realized in 90 run flash technology.Experimental results show the access time is 14.7 ns with power supply of 1.2 V and slow corner at 125℃.
