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A Kernel-Based Convolution Method to Calculate Sparse Aerial Image Intensity for Lithography Simulation 被引量:3
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作者 史峥 王国雄 +2 位作者 严晓浪 陈志锦 高根生 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2003年第4期357-361,共5页
Optical proximity correction (OPC) systems require an accurate and fast way to predict how patterns will be transferred to the wafer.Based on Gabor's 'reduction to principal waves',a partially coherent ima... Optical proximity correction (OPC) systems require an accurate and fast way to predict how patterns will be transferred to the wafer.Based on Gabor's 'reduction to principal waves',a partially coherent imaging system can be represented as a superposition of coherent imaging systems,so an accurate and fast sparse aerial image intensity calculation algorithm for lithography simulation is presented based on convolution kernels,which also include simulating the lateral diffusion and some mask processing effects via Gaussian filter.The simplicity of this model leads to substantial computational and analytical benefits.Efficiency of this method is also shown through simulation results. 展开更多
关键词 lithography simulation optical proximity correction convolution kernels
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Rigorous electromagnetic field model based on waveguide method for 3D thick resist lithography simulation
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作者 Wang Yuxin Zhou Zaifa +3 位作者 Hua Jie Wang Fei Xu Huanwen Huang Qing'an 《强激光与粒子束》 EI CAS CSCD 北大核心 2016年第6期8-12,共5页
SU-8 thick resist lithography has become the mainstream technology for structures with high aspect ratio in the micro-electro-mechanical system(MEMS)and integrated circuits(ICs).So as to replace ex pensive and time-co... SU-8 thick resist lithography has become the mainstream technology for structures with high aspect ratio in the micro-electro-mechanical system(MEMS)and integrated circuits(ICs).So as to replace ex pensive and time-consuming lithographic experiments,lithography simulation becomes an increasingly valuable tool for predicting results and optimizing manufacture process.A three-dimensional(3D)lithography simula tion model is developed for the ultraviolet(UV)process of SU-8 resist.The model utilizes waveguide(WG)method based on rigorous electromagnetic field theory,which is more comprehensive than its two-dimension counterparts.Using this model,the light intensity distribution and morphology of photoresist after develop ment process can be stereoscopically predicted.A series of simulations and experiments have been conducted to verify the validity of the model.The study is carried out on SU-8 under UV source with 365 nm and 2.6 mW/cm^2.Simulation results are given by cross section image and stereogram combined with corresponding experi mental outcome.The results confirm the validity faster than other methods and remains accurate.of the simulation model and prove that the 3D hybrid model is faster than other methods and remains accurate. 展开更多
关键词 lithography simulation micro-electro-mechanics system WAVEGUIDE light intensity dis
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