Let K<sup>n×n</sup> be the set of all n×n matrices and K<sub>r</sub><sup>n×n</sup> the set {A∈K<sup>n×n</sup>|rankA=r} on askew field K. Zhuang [1] ...Let K<sup>n×n</sup> be the set of all n×n matrices and K<sub>r</sub><sup>n×n</sup> the set {A∈K<sup>n×n</sup>|rankA=r} on askew field K. Zhuang [1] denotes by A<sup>#</sup> the group inverse of A∈K<sup>n×n</sup> which is the solu-tion of the euqations:AXA=A, XAX=X, AX=AX.展开更多
The object of the paper is to formulate Quantum (Schrödinger) dynamics of spectrally bounded wavefunction. The Nyquist theorem is used to replace the wavefunction with a discrete series of numbers. Consequent...The object of the paper is to formulate Quantum (Schrödinger) dynamics of spectrally bounded wavefunction. The Nyquist theorem is used to replace the wavefunction with a discrete series of numbers. Consequently, in this case, Schrödinger dynamics can be formalized as a universal set of ordinary differential Equations, with universal coupling between them, which are related to Euler’s formula. It is shown that the coefficient (m, n) is inversely proportional to the distance between the points n and m. As far as we know, this is the first time that this inverse square law was formulated.展开更多
The 28 nm process has a high cost-performance ratio and has gradually become the standard for the field of radiation-hardened devices.However,owing to the minimum physical gate length of only 35 nm,the physical area o...The 28 nm process has a high cost-performance ratio and has gradually become the standard for the field of radiation-hardened devices.However,owing to the minimum physical gate length of only 35 nm,the physical area of a standard 6T SRAM unit is approximately 0.16μm^(2),resulting in a significant enhancement of multi-cell charge-sharing effects.Multiple-cell upsets(MCUs)have become the primary physical mechanism behind single-event upsets(SEUs)in advanced nanometer node devices.The range of ionization track effects increases with higher ion energies,and spacecraft in orbit primarily experience SEUs caused by high-energy ions.However,ground accelerator experiments have mainly obtained low-energy ion irradiation data.Therefore,the impact of ion energy on the SEU cross section,charge collection mechanisms,and MCU patterns and quantities in advanced nanometer devices remains unclear.In this study,based on the experimental platform of the Heavy Ion Research Facility in Lanzhou,low-and high-energy heavy-ion beams were used to study the SEUs of 28 nm SRAM devices.The influence of ion energy on the charge collection processes of small-sensitive-volume devices,MCU patterns,and upset cross sections was obtained,and the applicable range of the inverse cosine law was clarified.The findings of this study are an important guide for the accurate evaluation of SEUs in advanced nanometer devices and for the development of radiation-hardening techniques.展开更多
Dispersing emitters, whose emissions are consistent with the inverse square law, from a point into cylindrical shapes causes a field-strength depression which is strongly dependent upon the cylinder’s dimensions and ...Dispersing emitters, whose emissions are consistent with the inverse square law, from a point into cylindrical shapes causes a field-strength depression which is strongly dependent upon the cylinder’s dimensions and the distance from the cylinder. The computations of field-strength depressions are partitioned into the components due to dispersion of the emitters alone, due to self-absorption alone, and the total field-strength depression. Each partition is displayed graphically for distances of 5 cm to 10 meters from the cylinders and for a variety of cylinder dimensions. The shape of the displayed curves is analyzed to reveal the basis for correlations between curve shape and the cylinder dimensions. Practical use of the data presented graphically is demonstrated.展开更多
In this note,the tampered failure rate model is generalized from the step-stress accelerated life testing setting to the progressive stress accelerated life testing for the first time.For the parametric setting where ...In this note,the tampered failure rate model is generalized from the step-stress accelerated life testing setting to the progressive stress accelerated life testing for the first time.For the parametric setting where the scale parameter satisfying the equation of the inverse power law is Weibull,maximum likelihood estimation is investigated.展开更多
基金This work is Supported by NSF of Heilongjiang Provice
文摘Let K<sup>n×n</sup> be the set of all n×n matrices and K<sub>r</sub><sup>n×n</sup> the set {A∈K<sup>n×n</sup>|rankA=r} on askew field K. Zhuang [1] denotes by A<sup>#</sup> the group inverse of A∈K<sup>n×n</sup> which is the solu-tion of the euqations:AXA=A, XAX=X, AX=AX.
文摘The object of the paper is to formulate Quantum (Schrödinger) dynamics of spectrally bounded wavefunction. The Nyquist theorem is used to replace the wavefunction with a discrete series of numbers. Consequently, in this case, Schrödinger dynamics can be formalized as a universal set of ordinary differential Equations, with universal coupling between them, which are related to Euler’s formula. It is shown that the coefficient (m, n) is inversely proportional to the distance between the points n and m. As far as we know, this is the first time that this inverse square law was formulated.
基金supported by the National Natural Science Foundation of China(Nos.12105341 and 12035019)the opening fund of Key Laboratory of Silicon Device and Technology,Chinese Academy of Sciences(No.KLSDTJJ2022-3).
文摘The 28 nm process has a high cost-performance ratio and has gradually become the standard for the field of radiation-hardened devices.However,owing to the minimum physical gate length of only 35 nm,the physical area of a standard 6T SRAM unit is approximately 0.16μm^(2),resulting in a significant enhancement of multi-cell charge-sharing effects.Multiple-cell upsets(MCUs)have become the primary physical mechanism behind single-event upsets(SEUs)in advanced nanometer node devices.The range of ionization track effects increases with higher ion energies,and spacecraft in orbit primarily experience SEUs caused by high-energy ions.However,ground accelerator experiments have mainly obtained low-energy ion irradiation data.Therefore,the impact of ion energy on the SEU cross section,charge collection mechanisms,and MCU patterns and quantities in advanced nanometer devices remains unclear.In this study,based on the experimental platform of the Heavy Ion Research Facility in Lanzhou,low-and high-energy heavy-ion beams were used to study the SEUs of 28 nm SRAM devices.The influence of ion energy on the charge collection processes of small-sensitive-volume devices,MCU patterns,and upset cross sections was obtained,and the applicable range of the inverse cosine law was clarified.The findings of this study are an important guide for the accurate evaluation of SEUs in advanced nanometer devices and for the development of radiation-hardening techniques.
文摘Dispersing emitters, whose emissions are consistent with the inverse square law, from a point into cylindrical shapes causes a field-strength depression which is strongly dependent upon the cylinder’s dimensions and the distance from the cylinder. The computations of field-strength depressions are partitioned into the components due to dispersion of the emitters alone, due to self-absorption alone, and the total field-strength depression. Each partition is displayed graphically for distances of 5 cm to 10 meters from the cylinders and for a variety of cylinder dimensions. The shape of the displayed curves is analyzed to reveal the basis for correlations between curve shape and the cylinder dimensions. Practical use of the data presented graphically is demonstrated.
基金This research is by the National Natural Science Foundation of China(69971016, 10271079) the Science and Technology Development Foundation of Shanghai(00JC14507) the Major Branch of Learning Foundation of Shanghai.
文摘In this note,the tampered failure rate model is generalized from the step-stress accelerated life testing setting to the progressive stress accelerated life testing for the first time.For the parametric setting where the scale parameter satisfying the equation of the inverse power law is Weibull,maximum likelihood estimation is investigated.
