The paper has reported the structural,transport and optical properties of boron doped zinc oxide（ZnO：B） thin films grown on glass substrate by sol-gel spin coating process.It is observed from the analysis of the X-...The paper has reported the structural,transport and optical properties of boron doped zinc oxide（ZnO：B） thin films grown on glass substrate by sol-gel spin coating process.It is observed from the analysis of the X-ray diffraction（XRD） results that the crystalline quality of the films is improved with increasing B concentration.A crystallite size of ～17 nm is obtained for B doped films.A minimum resistivity of 7.9×10-4 Ω.cm is obtained at 0.6 at.% of B concentration in the ZnO：B films.Ionized and intragrain cluster scattering are found to dominate the scattering mechanism in ZnO：B films.Optical interference pattern in transmittance spectra shows good homogeneity with a transparency of ～88% in the visible region.The band gap of the films is increased from 3.24 to 3.35 eV with increasing B concentration.Band gap widening is analyzed in terms of Burstein-Moss shift.The origin of the broad band photoluminescence（PL） spectra is explained in terms of the intragrain cluster scattering.展开更多
基金support from MNRE Project No. 31/7/2004-05/PV-R&D,Govt. of India
文摘The paper has reported the structural,transport and optical properties of boron doped zinc oxide（ZnO：B） thin films grown on glass substrate by sol-gel spin coating process.It is observed from the analysis of the X-ray diffraction（XRD） results that the crystalline quality of the films is improved with increasing B concentration.A crystallite size of ～17 nm is obtained for B doped films.A minimum resistivity of 7.9×10-4 Ω.cm is obtained at 0.6 at.% of B concentration in the ZnO：B films.Ionized and intragrain cluster scattering are found to dominate the scattering mechanism in ZnO：B films.Optical interference pattern in transmittance spectra shows good homogeneity with a transparency of ～88% in the visible region.The band gap of the films is increased from 3.24 to 3.35 eV with increasing B concentration.Band gap widening is analyzed in terms of Burstein-Moss shift.The origin of the broad band photoluminescence（PL） spectra is explained in terms of the intragrain cluster scattering.
