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Effects of Squeeze-film Air Damping on Properties of MEMS Inertial Switch in Fuse
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作者 牛兰杰 李晓杰 翟蓉 《Defence Technology(防务技术)》 SCIE EI CAS 2010年第1期20-24,共5页
The squeeze-film air damping exists in a lot of micro-electronic-mechanical system (MEMS) devices unavoidably. The effects of air damping in traditional inertial switch with spring-mass system can be ignored for its l... The squeeze-film air damping exists in a lot of micro-electronic-mechanical system (MEMS) devices unavoidably. The effects of air damping in traditional inertial switch with spring-mass system can be ignored for its large volume and mass. But, many properties of MEMS switch, such as sensitivity, resolution and contact time, are affected by the air damping caused from the squeezed air film between two parallel plates moving relatively. Based on the conservation laws for mass and flux and the nonlinear Reynolds equation, the coefficient of squeeze-film damping was derived. The dynamic responses of the inertial switch with and without squeeze-film damping were simulated by using software ANSYS. The simulated results show that the sensitivity and contact time of the switch descend by about 5% and 15%, respectively, when the effects of squeeze-film damping are considered. 展开更多
关键词 engineering mechanics FUSE MEMS inertial switch squeeze-film air damping
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Erratum to:Sensing-in-Energy microdevice for high-g shock via supercapacitorwrapped inertial switch
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《Nano Research》 2025年第11期1339-1339,共1页
Yiqun Wang1,Kaiyou Liu1,Jue Huang1,Xiaofeng Wang1,3,Keren Dai2,and Zheng You1,31 Department of Precision Instrument,Tsinghua University,Beijing 100084,China 2 School of Mechanical Engineering,Nanjing University of Sci... Yiqun Wang1,Kaiyou Liu1,Jue Huang1,Xiaofeng Wang1,3,Keren Dai2,and Zheng You1,31 Department of Precision Instrument,Tsinghua University,Beijing 100084,China 2 School of Mechanical Engineering,Nanjing University of Science and Technology,Nanjing 210094,China 3 Beijing Advanced Innovation Center for Integrated Circuits,Tsinghua University,Beijing 100084,China. 展开更多
关键词 integrated circuitstsinghua sensing energy microdevice high g shock precision instrumenttsinghua inertial switch supercapacitorwrapped inertial switch SUPERCAPACITOR
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Sensing-in-Energy microdevice for high-g shock via supercapacitorwrapped inertial switch
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作者 Yiqun Wang Kaiyou Liu +3 位作者 Jue Huang Xiaofeng Wang Keren Dai Zheng You 《Nano Research》 2025年第8期383-395,共13页
Driven by“More than Moore”,miniaturization and multifunctional integration of micro-energy devices are emerging as critical pathways for next-generation compact microsystems.This study proposes a sensing-in-Energy(S... Driven by“More than Moore”,miniaturization and multifunctional integration of micro-energy devices are emerging as critical pathways for next-generation compact microsystems.This study proposes a sensing-in-Energy(SiE)microdevice that immerses an inertial switch in a parallel-connected supercapacitor’s electrolyte,enabling simultaneous impact sensing and stable energy supply under extremely high gravitational acceleration(high-g)shocks(over 10,000 g).The SiE microdevice can be viewed as a high-amplitude shock sensor(raw signal peak>50 mV)under high-frequency perspective,and a shock-resistant electrochemical power source(voltage fluctuation<2%)under low-frequency perspective,while energy consumption reduces over 99.9%compared with conventional high-g sensor due to its event-driven mechanism.Sensing performance is boosted>50%using multiphysics model combined with machine learning algorithm.Furthermore,a fuze microsystem was built based on SiE microdevice,achieving 150μs-level ultrafast response.Three-layer penetration experiments have verified the engineering application of SiE microdevice and its fuze microsystem in smart munitions domains,providing a novel paradigm for heterogeneous microsystem in high-dynamic environments. 展开更多
关键词 Sensing-in-Energy high-g shock supercapacitor-wrapped inertial switch fuze microsystem heterogeneous integration
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