Indium zinc oxide （IZO） thin films with different percentages of In content （In/[In＋Zn]） are synthesized on glass substrates by magnetron sputtering, and the structural, electrical and optical properties of IZO t...Indium zinc oxide （IZO） thin films with different percentages of In content （In/[In＋Zn]） are synthesized on glass substrates by magnetron sputtering, and the structural, electrical and optical properties of IZO thin films deposited at different In2O3 target powers are investigated. IZO thin films grown at different In2O3 target sputtering powers show evident morphological variation and different grain sizes. As the In2O3 sputtering power rises, the grain size becomes larger and electrical mobility increases. The film grown with an In2O3 target power of 100 W displays the highest electrical mobility of 13.5 cm.V-1-s-1 and the lowest resistivity of 2.4× 10^-3 Ω.cm. The average optical transmittance of the IZO thin film in the visible region reaches 80% and the band gap broadens with the increase of In2O3 target power, which is attributed to the increase in carrier concentration and is in accordance with Burstein-Moss shift theory.展开更多
目的建立高效液相色谱法同时测定氨咖黄敏胶囊中对乙酰氨基酚、咖啡因2种成分的含量。方法采用Agilent extend-C_（18）（150 mm×4.6 mm,5μm）色谱柱,流动相为乙腈（A）-三乙胺溶液（1 m L三乙胺加79 m L水,调p H至3.1,B）（17∶8...目的建立高效液相色谱法同时测定氨咖黄敏胶囊中对乙酰氨基酚、咖啡因2种成分的含量。方法采用Agilent extend-C_（18）（150 mm×4.6 mm,5μm）色谱柱,流动相为乙腈（A）-三乙胺溶液（1 m L三乙胺加79 m L水,调p H至3.1,B）（17∶83）,流速1.0 m L/min,检测波长217 nm;柱温25℃,进样量15μL。结果对乙酰氨基酚、咖啡因的线性浓度范围分别为831.33~2 078.33μg/m L（r=0.999 6）和50.27~125.67μg/m L（r=0.999 4）,两组分平均回收率分别为99.99%（RSD=0.02%）和100.14%（RSD=0.52%）。结论该方法灵敏度、准确度高,重复性好,适用于氨咖黄敏胶囊中对乙酰氨基酚和咖啡因2种有效成分的测定。展开更多
基金supported by the National Natural Science Foundation of China (Grant No. 10974174)the Natural Science Foundation of Zhejiang Province of China (Grant Nos. Z6100117, Z1110057, and Y4080171)
文摘Indium zinc oxide （IZO） thin films with different percentages of In content （In/[In＋Zn]） are synthesized on glass substrates by magnetron sputtering, and the structural, electrical and optical properties of IZO thin films deposited at different In2O3 target powers are investigated. IZO thin films grown at different In2O3 target sputtering powers show evident morphological variation and different grain sizes. As the In2O3 sputtering power rises, the grain size becomes larger and electrical mobility increases. The film grown with an In2O3 target power of 100 W displays the highest electrical mobility of 13.5 cm.V-1-s-1 and the lowest resistivity of 2.4× 10^-3 Ω.cm. The average optical transmittance of the IZO thin film in the visible region reaches 80% and the band gap broadens with the increase of In2O3 target power, which is attributed to the increase in carrier concentration and is in accordance with Burstein-Moss shift theory.
