Post-processing can effectively improve the resistance to laser damage in multilayer films used in a high power laser system.In this work,HfO_(2)/SiO_(2)multilayer films are prepared by e-beam evaporation and thenβ-r...Post-processing can effectively improve the resistance to laser damage in multilayer films used in a high power laser system.In this work,HfO_(2)/SiO_(2)multilayer films are prepared by e-beam evaporation and thenβ-ray irradiation is employed as the post-processing method.The particle irradiation affects the laser induced damage threshold(LIDT),which includes defects,surface roughness,packing density and residual stress.The residual stress that is relaxed during irradiation changes from compressive stress into tensile stress.Our results indicate that appropriate tensile stress can improve LIDT remarkably.In view of the fact that LIDT rises from 8 J/cm^(2)to 12 J/cm^(2),i.e.,50%increase,after the film has been irradiated by 2.2×10^(13)/cm^(2)β-ray,the particle irradiation can be used as a controllable and desirable postprocessing method to improve the resistance to laser induced damage.展开更多
The one-dimensional photonic crystals of Ag/SiO_(2) system are studied to investigate the photonic band gaps (PBG). The samples were prepared by the ultra-high vacuum electron beam evaporation. The clear band gaps wer...The one-dimensional photonic crystals of Ag/SiO_(2) system are studied to investigate the photonic band gaps (PBG). The samples were prepared by the ultra-high vacuum electron beam evaporation. The clear band gaps were observed. Satisfactory agreement between experimental and calculated results was obtained without fitting. The thickness of SiO_(2 )film has influence on the photonic band gap, as well as it awfully affects the transmittance of Ag. More layers can get clearer PBG.展开更多
We investigated the effects of Si-layer-thickness ratios on ultraviolet (UV) peak intensities of Si/ SiO2 multilayered films produced by alternately stacking several-nanometer-thick Si and SiO2 layers using radio-freq...We investigated the effects of Si-layer-thickness ratios on ultraviolet (UV) peak intensities of Si/ SiO2 multilayered films produced by alternately stacking several-nanometer-thick Si and SiO2 layers using radio-frequency sputtering for the first time. The Si-layer-thickness ratio of the Si/SiO2 film is a very important parameter for enhancing the peak intensity because the ratio is concerned with the size of Si nanocrystals in the film, which might affect the intensity of the UV light emission from the film. We prepared seven samples with various estimated Si-layer-thickness ratios, and measured the photoluminescence spectra of the samples after annealing at 1150°C, 1200°C, or 1250°C for 25 min. From our experiments, we estimate that the proper Si-layer-thickness ratio to obtain the strongest UV peaks from the Si/SiO2 multilayered films is around 0.29. Such a UV-lightemitting thin film is expected to be used in future higher-density optical-disk systems.展开更多
In order to prolong the service life of piston rings of heavy vehicle engine and decrease the friction and wear of piston rings and cylinder liner,CrMoN/MoS_2 multilayer films were deposited on the surface of rings by...In order to prolong the service life of piston rings of heavy vehicle engine and decrease the friction and wear of piston rings and cylinder liner,CrMoN/MoS_2 multilayer films were deposited on the surface of rings by magnetron sputtering and low temperature ion sulfuration.FESEM equipped with EDX was adopted to analyze the compositions and morphologies of surface,cross-section,and wear scars of the multilayer films.The nano-hardness and Young＇s modulus of the films were measured by a nano tester.Tribologicalproperties of the films were tested by an SRV~174;4 wear tester.The experimentalresults indicate that the structures of the multilayer films are dense and compact.The films possess nano hardness value of approximately 26.7 GPa and superior ability of plastic deformation resistance.The multilayer films can activate solid lubricating,and possess an excellent antifriction and wear resistance under the conditions of heavy load,high frequency,high temperature,and dynamic load.展开更多
The periodic [Ti/TiB2]n （n=l, 2, 3） multilayered films were prepared on the substrate of AISI 316L stainless steel by magnetron sputtering to enhance the adhesion of TiB2 films based on the remarkable mechanical per...The periodic [Ti/TiB2]n （n=l, 2, 3） multilayered films were prepared on the substrate of AISI 316L stainless steel by magnetron sputtering to enhance the adhesion of TiB2 films based on the remarkable mechanical performance of layered films. The influence of periods on microstructure, adhesion and hardness of [Ti/TiB2]n multilayered films was studied. X-ray diffraction （XRD） analysis shows that the monolayer TiB2 films exhibit （001） preferred orientation, and the preferred orientation of [Ti/TiB2], multilayered films transfers from （001） to （100） with the increase of periods. The cross-sectional morphology of each film displays homogeneity by field emission scanning electron microscopy （FESEM）. The hardness of the films measured via nanoindention changes from 20 to 26 GPa with the increase of periods. These values of hardness are a bit lower than that of the monolayer TiB2 films which is up to 33 GPa. However, the [Ti/TiB2]n multilayered films present a considerably good adhesion, which reaches a maximum of 24 N, in comparison with the monolayer TiB2 films according to the experimental results.展开更多
Ni0.7Zn0.3Fe2O4/Co0.8Fe2.2O4（NZFO/CFO） multilayer films are fabricated on Si（lO0） substrates by the chemical solution deposition method. The mierostructure and magnetic properties are systematically investigated. ...Ni0.7Zn0.3Fe2O4/Co0.8Fe2.2O4（NZFO/CFO） multilayer films are fabricated on Si（lO0） substrates by the chemical solution deposition method. The mierostructure and magnetic properties are systematically investigated. The results of field-emission scanning electronic microscopy show that the grain size of the NZFO/CFO multilayer film is quite uniform and the thickness is about 30Ohm. The remanence enhancement effect of the NZFO/CFO multilayer film can be mainly attributed to the exchange coupling interaction between NZFO and CFO ferrite films, which is in favor of the design and fabrication of modern electronic devices.展开更多
Metallosupramolecular coordination polyelectrolyte, Fe（II）-metalloviologen（FEN）, was prepared by the reaction of Fe（II） with a novel bisterpyridine ligand. As active components, FENs could be assembled into elec...Metallosupramolecular coordination polyelectrolyte, Fe（II）-metalloviologen（FEN）, was prepared by the reaction of Fe（II） with a novel bisterpyridine ligand. As active components, FENs could be assembled into electrochromic multilayer films with negative charged polystyrene sulfate（PSS） by the sequential deposition layer-by-layer technique. Numerous analytical instruments, such as UV-Vis spectroscopy, atomic force microscopy（AFM）, tunneling electron microscopy（TEM）, zeta-potential measurement and electrochemical measurement have been utilized to characterize their morphology, optical and electrochromic properties. It has been observed that as-prepared films exhibited multi-colour changes by triggering with different potentials. However, the low optical contrast of multilayer films would limit their further applications. In order to overcome this problem, semiconductor TiO2 nanoparticles（TiO2） were incorporated into FEN multilayers by layer-by-layer approach. By carefully optimizing the film structure, as-resulted hybrid films containing FEN, TiO2 and PSS exhibited high optical contrast, suitable response time and long-term stability. Such hybrid films should be promising candidates to meet the requirements for developing flexible displays and electrochromic devices.展开更多
The Sb6 Te4/VO2 multilayer thin films are prepared by magnetron sputtering and the potential application in phase change memory is investigated in detail. Compared with Sb6 Te4, Sb6 Te4/VO2 multilayer composite thin f...The Sb6 Te4/VO2 multilayer thin films are prepared by magnetron sputtering and the potential application in phase change memory is investigated in detail. Compared with Sb6 Te4, Sb6 Te4/VO2 multilayer composite thin films have higher phase change temperature and crystallization resistance, indicating better thermal stability and less power consumption. Also, Sb6 Te4/VO2 has a broader energy band of 1.58 eV and better data retention （125℃ for 103/）. The crystallization is suppressed by the multilayer interfaces in Sbf Te4/VO2 thin film with a smaller rms surface roughness for Sbf Te4/VO2 than monolayer Sb4Te6. The picosecond laser technology is applied to study the phase change speed. A short crystallization time of 5.21 ns is realized for the Sb6Te4 （2nm）/VO2 （8nm） thin film. The Sb6 Te4/VO2 multilayer thin film is a potential and competitive phase change material for its good thermal stability and fast phase change speed.展开更多
[SiO2/FePt]5/Ag thin films were deposited by RF magnetron sputtering on the glass substrates and post annealing at 550 ℃ for 30 min in vacuum. Vibrating sample magnetometer and X-ray diffraction analyser were applied...[SiO2/FePt]5/Ag thin films were deposited by RF magnetron sputtering on the glass substrates and post annealing at 550 ℃ for 30 min in vacuum. Vibrating sample magnetometer and X-ray diffraction analyser were applied to study the magnetic properties and microstructures of the films. The results show that without Ag underlayer [SiO2/FePt]5 films deposited onto the glass are FCC disordered; with the addition of Ag underlayer [SiO]FePt]5/Ag films are changed into L10 and （111） mixed texture. The variation of the SiO2 nonmagnetic layer thickness in [SiO2/FePt]5/Ag films indicates that SiO2-doping plays an important role in improving the order parameter and the perpendicular magnetic anisotropy, and reducing the grain size and intergrain interactions. By controlling SiO2 thickness the highly perpendicular magnetic anisotropy can be obtained in the [SiO2 （0.6 nm）/FePt （3 nm）]5/Ag （50 nm） films and highly （001）-oriented films can be obtained in the [SiO2 （2 nm）/FePt （3 nm）]5/Ag （50 nm） films.展开更多
Fe2O3/SiO2 nano-composite films were prepared by sol-gel technique combining heat treatment in the range of 100-900 ℃. The particle size was observed by FE-SEM. Optical properties of the films were investigated by UV...Fe2O3/SiO2 nano-composite films were prepared by sol-gel technique combining heat treatment in the range of 100-900 ℃. The particle size was observed by FE-SEM. Optical properties of the films were investigated by UV-visible spectra. Structural and magnetic characteristics were investigated through FT-IR and VSM. The transparency of the Fe2O3/SiO2 nano-composite films decreased with the content of the Fe2O3. Water and organic solvent in the films were evaporated with heat treatment, so the transparency of the films was enhanced under high temperature. It is also found that the saturation magnetization （Ms） of the films increases with the temperature. As the content of the Fe2O3 increases, when the content of the Fe2O3 is around 30wt%, the Ms of the films has a maximum value.展开更多
PS/SiO2 particles with core-shell structure were synthesized by coating silica on surface of polystyrene(PS) colloidal particles.The reaction parameters,such as initial tetraethyl orthosilicate(TEOS) concentration,wat...PS/SiO2 particles with core-shell structure were synthesized by coating silica on surface of polystyrene(PS) colloidal particles.The reaction parameters,such as initial tetraethyl orthosilicate(TEOS) concentration,water concentration and reaction temperature,have been investigated to control the thickness of silica shells.The shell thickness was prepositional to the square root of the initial concentration of TEOS and first increased with increasing water concentration,reached a maximum at about 2.0 mol/L and then started decreasing beyond that concentration.It was also found that the shell thickness decreased firstly with the reaction temperature added,then tended to a constant.The so-synthesized PS/SiO2 core-shell particles were directly crystallized into 3-D ordered thin film,then sintered at 570℃ into the ordered macroporous thin film.Compared with the conditional method,the present approach avoids repeatedly filling the precursor in the templetes and save time more.展开更多
Total dose effects and single event effects on radiation-hardened power vertical double-diffusion metal oxide semiconductor（VDMOS） devices with composite SiO2-Si3N4 film gates are investigated.The relationships amon...Total dose effects and single event effects on radiation-hardened power vertical double-diffusion metal oxide semiconductor（VDMOS） devices with composite SiO2-Si3N4 film gates are investigated.The relationships among the important electrical parameters of the samples with different thickness SiO2-Si3N4 films,such as threshold voltage,breakdown voltage,and on-state resistance in accumulated dose,are discussed.The total dose experiment results show that the breakdown voltage and the on-state resistance barely change with the accumulated dose.However,the relationships between the threshold voltages of the samples and the accumulated dose are more complex,and not only positively drift,but also negatively drift.At the end of the total dose experiment,we select the group of samples which have the smaller threshold voltage shift to carry out the single event effect studies.We find that the samples with appropriate thickness ratio SiO2-Si3N4 films have a good radiation-hardening ability.This method may be useful in solving both the SEGR and the total dose problems with the composite SiO2-Si3N4 films.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant No.11405085)the Jiangsu Provincial Natural Science Fund,China(Grant No.BK20130789)
文摘Post-processing can effectively improve the resistance to laser damage in multilayer films used in a high power laser system.In this work,HfO_(2)/SiO_(2)multilayer films are prepared by e-beam evaporation and thenβ-ray irradiation is employed as the post-processing method.The particle irradiation affects the laser induced damage threshold(LIDT),which includes defects,surface roughness,packing density and residual stress.The residual stress that is relaxed during irradiation changes from compressive stress into tensile stress.Our results indicate that appropriate tensile stress can improve LIDT remarkably.In view of the fact that LIDT rises from 8 J/cm^(2)to 12 J/cm^(2),i.e.,50%increase,after the film has been irradiated by 2.2×10^(13)/cm^(2)β-ray,the particle irradiation can be used as a controllable and desirable postprocessing method to improve the resistance to laser induced damage.
基金Supported by the National High Technology Development Program of China(Grant No.2003AA32720)Shanghai Nanotechnology Promotion Center(0352nm016, 0359nm204,0252nm084)+2 种基金Science and Technology Council of Shanghai(03dz11009)Fore-research of basic research project(2001CCA02800)the special Foundation for State Major Basic Research Programmeof China(Grant No.001CB610408)
文摘The one-dimensional photonic crystals of Ag/SiO_(2) system are studied to investigate the photonic band gaps (PBG). The samples were prepared by the ultra-high vacuum electron beam evaporation. The clear band gaps were observed. Satisfactory agreement between experimental and calculated results was obtained without fitting. The thickness of SiO_(2 )film has influence on the photonic band gap, as well as it awfully affects the transmittance of Ag. More layers can get clearer PBG.
文摘We investigated the effects of Si-layer-thickness ratios on ultraviolet (UV) peak intensities of Si/ SiO2 multilayered films produced by alternately stacking several-nanometer-thick Si and SiO2 layers using radio-frequency sputtering for the first time. The Si-layer-thickness ratio of the Si/SiO2 film is a very important parameter for enhancing the peak intensity because the ratio is concerned with the size of Si nanocrystals in the film, which might affect the intensity of the UV light emission from the film. We prepared seven samples with various estimated Si-layer-thickness ratios, and measured the photoluminescence spectra of the samples after annealing at 1150°C, 1200°C, or 1250°C for 25 min. From our experiments, we estimate that the proper Si-layer-thickness ratio to obtain the strongest UV peaks from the Si/SiO2 multilayered films is around 0.29. Such a UV-lightemitting thin film is expected to be used in future higher-density optical-disk systems.
基金Funded by the National Natural Science Foundation of China(No.50901089)the Project supported by Army Important Researches(No.2012ZB02)
文摘In order to prolong the service life of piston rings of heavy vehicle engine and decrease the friction and wear of piston rings and cylinder liner,CrMoN/MoS_2 multilayer films were deposited on the surface of rings by magnetron sputtering and low temperature ion sulfuration.FESEM equipped with EDX was adopted to analyze the compositions and morphologies of surface,cross-section,and wear scars of the multilayer films.The nano-hardness and Young＇s modulus of the films were measured by a nano tester.Tribologicalproperties of the films were tested by an SRV~174;4 wear tester.The experimentalresults indicate that the structures of the multilayer films are dense and compact.The films possess nano hardness value of approximately 26.7 GPa and superior ability of plastic deformation resistance.The multilayer films can activate solid lubricating,and possess an excellent antifriction and wear resistance under the conditions of heavy load,high frequency,high temperature,and dynamic load.
基金Project(51175212)supported by the National Natural Science Foundation of China
文摘The periodic [Ti/TiB2]n （n=l, 2, 3） multilayered films were prepared on the substrate of AISI 316L stainless steel by magnetron sputtering to enhance the adhesion of TiB2 films based on the remarkable mechanical performance of layered films. The influence of periods on microstructure, adhesion and hardness of [Ti/TiB2]n multilayered films was studied. X-ray diffraction （XRD） analysis shows that the monolayer TiB2 films exhibit （001） preferred orientation, and the preferred orientation of [Ti/TiB2], multilayered films transfers from （001） to （100） with the increase of periods. The cross-sectional morphology of each film displays homogeneity by field emission scanning electron microscopy （FESEM）. The hardness of the films measured via nanoindention changes from 20 to 26 GPa with the increase of periods. These values of hardness are a bit lower than that of the monolayer TiB2 films which is up to 33 GPa. However, the [Ti/TiB2]n multilayered films present a considerably good adhesion, which reaches a maximum of 24 N, in comparison with the monolayer TiB2 films according to the experimental results.
基金Supported by the National Natural Science Foundation of China under Grant Nos 11274314,11374304,51102072,21201052 and U1632161the Natural Science Major Foundation of Anhui Provincial Higher Education Institutions under Grant No KJ2012ZD14+2 种基金the Natural Science Foundation of Anhui Province under Grant No 1508085MA18the Postdoctoral Science Foundation of China under Grant No 2013M541848the Foundation for University Key Teachers from Hefei Normal University under Grant No2014136JKC08
文摘Ni0.7Zn0.3Fe2O4/Co0.8Fe2.2O4（NZFO/CFO） multilayer films are fabricated on Si（lO0） substrates by the chemical solution deposition method. The mierostructure and magnetic properties are systematically investigated. The results of field-emission scanning electronic microscopy show that the grain size of the NZFO/CFO multilayer film is quite uniform and the thickness is about 30Ohm. The remanence enhancement effect of the NZFO/CFO multilayer film can be mainly attributed to the exchange coupling interaction between NZFO and CFO ferrite films, which is in favor of the design and fabrication of modern electronic devices.
基金Supported by the National Natural Science Foundation of China(Nos.91123029, 61077066 and 50902128)the Natural Science Foundation of Jilin Province, China(No.20101534)
文摘Metallosupramolecular coordination polyelectrolyte, Fe（II）-metalloviologen（FEN）, was prepared by the reaction of Fe（II） with a novel bisterpyridine ligand. As active components, FENs could be assembled into electrochromic multilayer films with negative charged polystyrene sulfate（PSS） by the sequential deposition layer-by-layer technique. Numerous analytical instruments, such as UV-Vis spectroscopy, atomic force microscopy（AFM）, tunneling electron microscopy（TEM）, zeta-potential measurement and electrochemical measurement have been utilized to characterize their morphology, optical and electrochromic properties. It has been observed that as-prepared films exhibited multi-colour changes by triggering with different potentials. However, the low optical contrast of multilayer films would limit their further applications. In order to overcome this problem, semiconductor TiO2 nanoparticles（TiO2） were incorporated into FEN multilayers by layer-by-layer approach. By carefully optimizing the film structure, as-resulted hybrid films containing FEN, TiO2 and PSS exhibited high optical contrast, suitable response time and long-term stability. Such hybrid films should be promising candidates to meet the requirements for developing flexible displays and electrochromic devices.
基金Supported by the National Natural Science Foundation of China under Grant No 11774438the Natural Science Foundation of Jiangsu Province under Grant No BK20151172+2 种基金the Qing Lan Project,the Opening Project of State Key Laboratory of Silicon Materials under Grant No SKL2017-04the Opening Project of Key Laboratory of Microelectronic Devices and Integrated Technology of Chinese Academy of Sciencesthe Postgraduate Research and Practice Innovation Program of Jiangsu Province under Grant No SJCX18_1024
文摘The Sb6 Te4/VO2 multilayer thin films are prepared by magnetron sputtering and the potential application in phase change memory is investigated in detail. Compared with Sb6 Te4, Sb6 Te4/VO2 multilayer composite thin films have higher phase change temperature and crystallization resistance, indicating better thermal stability and less power consumption. Also, Sb6 Te4/VO2 has a broader energy band of 1.58 eV and better data retention （125℃ for 103/）. The crystallization is suppressed by the multilayer interfaces in Sbf Te4/VO2 thin film with a smaller rms surface roughness for Sbf Te4/VO2 than monolayer Sb4Te6. The picosecond laser technology is applied to study the phase change speed. A short crystallization time of 5.21 ns is realized for the Sb6Te4 （2nm）/VO2 （8nm） thin film. The Sb6 Te4/VO2 multilayer thin film is a potential and competitive phase change material for its good thermal stability and fast phase change speed.
基金Project(10574085) supported by the National Natural Science Foundation of ChinaProject(207020) supported by the Science Technology Key Project of the Ministry of Education, China
文摘[SiO2/FePt]5/Ag thin films were deposited by RF magnetron sputtering on the glass substrates and post annealing at 550 ℃ for 30 min in vacuum. Vibrating sample magnetometer and X-ray diffraction analyser were applied to study the magnetic properties and microstructures of the films. The results show that without Ag underlayer [SiO2/FePt]5 films deposited onto the glass are FCC disordered; with the addition of Ag underlayer [SiO]FePt]5/Ag films are changed into L10 and （111） mixed texture. The variation of the SiO2 nonmagnetic layer thickness in [SiO2/FePt]5/Ag films indicates that SiO2-doping plays an important role in improving the order parameter and the perpendicular magnetic anisotropy, and reducing the grain size and intergrain interactions. By controlling SiO2 thickness the highly perpendicular magnetic anisotropy can be obtained in the [SiO2 （0.6 nm）/FePt （3 nm）]5/Ag （50 nm） films and highly （001）-oriented films can be obtained in the [SiO2 （2 nm）/FePt （3 nm）]5/Ag （50 nm） films.
基金Funded by the Innovative Program of Shanghai Municipal Education Commission (No.08YZ97)the National Natural Science Foundation of China (No.10704048)
文摘Fe2O3/SiO2 nano-composite films were prepared by sol-gel technique combining heat treatment in the range of 100-900 ℃. The particle size was observed by FE-SEM. Optical properties of the films were investigated by UV-visible spectra. Structural and magnetic characteristics were investigated through FT-IR and VSM. The transparency of the Fe2O3/SiO2 nano-composite films decreased with the content of the Fe2O3. Water and organic solvent in the films were evaporated with heat treatment, so the transparency of the films was enhanced under high temperature. It is also found that the saturation magnetization （Ms） of the films increases with the temperature. As the content of the Fe2O3 increases, when the content of the Fe2O3 is around 30wt%, the Ms of the films has a maximum value.
基金Supported by the National Natural Science Foundation of China(No.:20221603)
文摘PS/SiO2 particles with core-shell structure were synthesized by coating silica on surface of polystyrene(PS) colloidal particles.The reaction parameters,such as initial tetraethyl orthosilicate(TEOS) concentration,water concentration and reaction temperature,have been investigated to control the thickness of silica shells.The shell thickness was prepositional to the square root of the initial concentration of TEOS and first increased with increasing water concentration,reached a maximum at about 2.0 mol/L and then started decreasing beyond that concentration.It was also found that the shell thickness decreased firstly with the reaction temperature added,then tended to a constant.The so-synthesized PS/SiO2 core-shell particles were directly crystallized into 3-D ordered thin film,then sintered at 570℃ into the ordered macroporous thin film.Compared with the conditional method,the present approach avoids repeatedly filling the precursor in the templetes and save time more.
文摘Total dose effects and single event effects on radiation-hardened power vertical double-diffusion metal oxide semiconductor（VDMOS） devices with composite SiO2-Si3N4 film gates are investigated.The relationships among the important electrical parameters of the samples with different thickness SiO2-Si3N4 films,such as threshold voltage,breakdown voltage,and on-state resistance in accumulated dose,are discussed.The total dose experiment results show that the breakdown voltage and the on-state resistance barely change with the accumulated dose.However,the relationships between the threshold voltages of the samples and the accumulated dose are more complex,and not only positively drift,but also negatively drift.At the end of the total dose experiment,we select the group of samples which have the smaller threshold voltage shift to carry out the single event effect studies.We find that the samples with appropriate thickness ratio SiO2-Si3N4 films have a good radiation-hardening ability.This method may be useful in solving both the SEGR and the total dose problems with the composite SiO2-Si3N4 films.
