Optimizing the orientation of β-Ga_(2)O_(3) has emerged as an effective strategy to design high-performance β-Ga_(2)O_(3) device,but the orientation growth mechanism and approach have not been revealed yet.Herein,by...Optimizing the orientation of β-Ga_(2)O_(3) has emerged as an effective strategy to design high-performance β-Ga_(2)O_(3) device,but the orientation growth mechanism and approach have not been revealed yet.Herein,by employing AlN buffer layer,the highly preferred orientation of β-Ga_(2)O_(3)(100)film rather than(-201)film is realized on 4H-SiC substrate at low sputtering power and temperature.Because β-Ga_(2)O_(3)(100)film exhibits a slower growth speed than(-201)film,the former possesses the higher dangling bond density and the lower nucleation energy,and a large conversion barrier exists between these two ori-entations.Moreover,the AlN buffer layer can suppress the surface oxidation of the 4H-SiC substrate and eliminate the strain of β-Ga_(2)O_(3)(100)film,which further reduces the nucleation energy and en-larges the conversion barrier.Meanwhile,the AlN buffer layer can increase the oxygen vacancy formation energy and decrease the oxygen vacancy concentration of β-Ga_(2)O_(3)(100)film.Consequently,the solar-blind photodetector based on the oriented film exhibits the outstanding detectivity of 1.22×10^(12) Jones and photo-to-dark current ratio of 1.11×10^(5),which are the highest among the reported β-Ga_(2)O_(3) solar-blind photodetector on the SiC substrate.Our results offer in-depth insights into the preferred orientation growth mechanism,and provide an effective way to design high-quality β-Ga_(2)O_(3)(100)orientation film and high-performance solar-blind photodetector.展开更多
Attempts to remove environmentally harmful materials in mass production industries are always a major issue and draw attention if the substitution guarantees a chance to lower fabrication cost and to improve device pe...Attempts to remove environmentally harmful materials in mass production industries are always a major issue and draw attention if the substitution guarantees a chance to lower fabrication cost and to improve device performance,as in a wide bandgap Zn_(1-x)Mg_(x)O(ZMO)to replace the CdS buffer in Cu(In_(1-x),Ga_(x))Se_(2)(CIGSe)thin-film solar cell structure.ZMO is one of the candidates for the buffer material in CIGSe thin-film solar cells with a wide and controllable bandgap depending on the Mg content,which can be helpful in attaining a suitable conduction band offset.Hence,compared to the fixed and limited bandgap of a CdS buffer,a ZMO buffer may provide advantages in V_(oc) and J_(sc) based on its controllable and wide bandgap,even with a relatively wider bandgap CIGSe thin-film solar cell.In addition,to solve problems with the defect sites at the ZMO/CIGSe junction interface,a few-nanometer ZnS layer is employed for heterojunction interface passivation,forming a ZMO/ZnS buffer structure by atomic layer deposition(ALD).Finally,a Cd-free all-dry-processed CIGSe solar cell with a wider bandgap(1.25 eV)and ALD-grown buffer structure exhibited the best power conversion efficiency of 19.1%,which exhibited a higher performance than the CdS counterpart.展开更多
The CO_2-seawater system and the method for calculating the partial pressure of CO2 (pCO2) in seawater are studied. The buffer capability of the ocean to increasing atmospheric CO2 is expressed in terms of the differe...The CO_2-seawater system and the method for calculating the partial pressure of CO2 (pCO2) in seawater are studied. The buffer capability of the ocean to increasing atmospheric CO2 is expressed in terms of the differential buffer factor and buffer index. Dissolutions of aragonite and calcite have a significant inffluence on the differential buffer factor. The trend of change in the buffer factor is obtained by a box model.展开更多
VO_2 thin films were grown on silicon substrates using Al_2O_3 thin films as the buffer layers. Compared with direct deposition on silicon, VO_2 thin films deposited on Al_2O_3 buffer layers experience a significant i...VO_2 thin films were grown on silicon substrates using Al_2O_3 thin films as the buffer layers. Compared with direct deposition on silicon, VO_2 thin films deposited on Al_2O_3 buffer layers experience a significant improvement in their microstructures and physical properties. By optimizing the growth conditions, the resistance of VO_2 thin films can change by four orders of magnitude with a reduced thermal hysteresis of 4 °C at the phase transition temperature. The electrically driven phase transformation was measured in Pt/Si/Al_2O_3/VO_2/Au heterostructures. The introduction of a buffer layer reduces the leakage current and Joule heating during electrically driven phase transitions. The C–V measurement result indicates that the phase transformation of VO_2 thin films can be induced by an electrical field.展开更多
Field-free spin-orbit torque(SOT)switching of perpendicular magnetization is essential for future spintronic devices.This study demonstrates the field-free switching of perpendicular magnetization in an HfO_(2)/Pt/Co/...Field-free spin-orbit torque(SOT)switching of perpendicular magnetization is essential for future spintronic devices.This study demonstrates the field-free switching of perpendicular magnetization in an HfO_(2)/Pt/Co/TaO_(x) structure,which is facilitated by a wedge-shaped HfO_(2)buffer layer.The field-free switching ratio varies with HfO_(2)thickness,reaching optimal performance at 25 nm.This phenomenon is attributed to the lateral anisotropy gradient of the Co layer,which is induced by the wedge-shaped HfO_(2)buffer layer.The thickness gradient of HfO_(2)along the wedge creates a corresponding lateral anisotropy gradient in the Co layer,correlating with the switching ratio.These findings indicate that field-free SOT switching can be achieved through designing buffer layer,offering a novel approach to innovating spin-orbit device.展开更多
Li_(1.3)Al_(0.3)Ti_(1.7)(PO_(4))_(3)(LATP),of much interest owing to its high ionic conductivity,superior air stability,and low cost,has been regarded as one of the most promising solid-state electrolytes for next-gen...Li_(1.3)Al_(0.3)Ti_(1.7)(PO_(4))_(3)(LATP),of much interest owing to its high ionic conductivity,superior air stability,and low cost,has been regarded as one of the most promising solid-state electrolytes for next-generation solid-state lithium batteries(SSLBs).Unfortunately,the commercialization of SSLBs is still impeded by severe interfacial issues,such as high interfacial impedance and poor chemical stability.Herein,we proposed a simple and convenient in-situ approach to constructing a tight and robust interface between the Li anode and LATP electrolyte via a SnO_(2)gradient buffer layer.It is firmly attached to the surface of LATP pellets due to the volume expansion of SnO_(2)when in-situ reacting with Li metal,and thus effectively alleviates the physical contact loosening during cycling,as confirmed by the mitigated impedance rising.Meanwhile,the as-formed SnO_(2)/Sn/LixSn gradient buffer layer with low electronic conductivity successfully protects the LATP electrolyte surface from erosion by the Li metal anode.Additionally,the LixSn alloy formed at the Li surface can effectively regulate uniform lithium deposition and suppress Li dendrite growth.Therefore,this work paves a new way to simultaneously address the chemical instability and poor physical contact of LATP with Li metal in developing low-cost and highly stable SSLBs.展开更多
Ba0.6Sr0.4TiO3 （BST） thin films with and without HfO 2 buffer layer were fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition. Dependences of HfO 2 thickness on the dielectric property and leakage curre...Ba0.6Sr0.4TiO3 （BST） thin films with and without HfO 2 buffer layer were fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition. Dependences of HfO 2 thickness on the dielectric property and leakage current of BST thin films were focused. The dielectric constant of BST thin films increased and then decreased with the increase of HfO 2 thickness, while the dielectric relaxation was gradually improved. The loss tangent and leakage current under positive bias decreased with the HfO 2 thickness increasing. The leakage current analysis based on the Schottky emission indicated an improvement of the BST/Pt interface with HfO 2 buffer layer. The loss tangent, tunability and figure of merit of optimized HfO 2 buffered BST thin film achieved 0.009 8, 21.91% （E max = 200 kV/cm）, 22.40 at 10 6 Hz, respectively.展开更多
The metal organic deposition(MOD)method was used for the epitaxial growth of the CeO2/La2Zr2O7(LZO)/LZO seed layer structure on a cube-textured Ni5W substrate layer by layer.The material phase and the macro-orientatio...The metal organic deposition(MOD)method was used for the epitaxial growth of the CeO2/La2Zr2O7(LZO)/LZO seed layer structure on a cube-textured Ni5W substrate layer by layer.The material phase and the macro-orientations were analyzed by XRD.The surface morphology and the blocking performance of the buffer layer were investigated by SEM and AES.The grain orientation and the crystallographic growth mode of the CeO2 layer were first characterized by electron backscattering diffraction(EBSD).The uniformly distributed islanded LZO seed layer optimized both the in-plan and the out-plan orientation of the CeO2/LZO buffer layers,and the CeO2/LZO buffer layers with a thickness of 175 nm acted as an efficient Ni,W barrier.The EBSD analysis indicated that the crystallographic orientation of each layer can be obtained at various accelerating voltages for the multilayer sample,the percentage of{001}<110>rotated cube texture of CeO2 layer reaching 97.4%at the accelerating voltage of 15 kV,thus showing epitaxial deposition with a high texture.展开更多
The CeO2 and Y2O3 buffer layers were deposited on the cube textured metallic Ni substrates by using reactive magnetron sputtering. Ar/H2 mixed atmosphere, which is used as pre-depositing gas, can effectively inhibit t...The CeO2 and Y2O3 buffer layers were deposited on the cube textured metallic Ni substrates by using reactive magnetron sputtering. Ar/H2 mixed atmosphere, which is used as pre-depositing gas, can effectively inhibit the formation of NiO. In addition, the linear relationship between pre-depositing time and total depositing time is required to ensure the epitaxial growth of the films. The growth conditions of CeO2 and Y2O3 were comparatively studied, and it is found that the windows of substrate temperatures and pressures for CeO2 films are wider than that for Y2O3 films.展开更多
Buffer layer provides an opportunity to enhance the quality of ultrathin magnetic films. In this paper, Co films with different thickness of Co Si2 buffer layers were grown on Si（001） substrates. In order to investi...Buffer layer provides an opportunity to enhance the quality of ultrathin magnetic films. In this paper, Co films with different thickness of Co Si2 buffer layers were grown on Si（001） substrates. In order to investigate morphology, structure,and magnetic properties of films, scanning tunneling microscope（STM）, low energy electron diffraction（LEED）, high resolution transmission electron microscopy（HRTEM）, and surface magneto-optical Kerr effect（SMOKE） were used. The results show that the crystal quality and magnetic anisotropies of the Co films are strongly affected by the thickness of Co Si2 buffer layers. Few Co Si2 monolayers can prevent the interdiffusion of Si substrate and Co film and enhance the Co film quality. Furthermore, the in-plane magnetic anisotropy of Co film with optimal buffer layer shows four-fold symmetry and exhibits the two-jumps of magnetization reversal process, which is the typical phenomenon in cubic（001） films.展开更多
The buffer layer CeO2 films were grown on cube textured metallic Ni substrates by using reactive magnetrun sputtering. Ar/H2 mixed atmosphere, which effectively inhibited the formation of NiO, was used as pre-depositi...The buffer layer CeO2 films were grown on cube textured metallic Ni substrates by using reactive magnetrun sputtering. Ar/H2 mixed atmosphere, which effectively inhibited the formation of NiO, was used as pre-depositing gas before CeO2 films were grown in Ar and 02. At 700 ℃ under the total pressure of 26 Pa,the pure c-axis orientation tilm was obtained. X-ray θ-2θscan, pole figure and φ-scan were used to observe the microstructure of the buffer layer. The resuits show that CeO2 film has strong cube texture and the FWHM is 9°. In addition, the CeO2 film is dense and crack-free.展开更多
An organic macromolecule, poly(1-vinylimidazole), with an appropriate polymerization degree was proposed and mixed with water to form a novel aqueous absorbent for SO_2 capture. This aqueous solution absorbent has the...An organic macromolecule, poly(1-vinylimidazole), with an appropriate polymerization degree was proposed and mixed with water to form a novel aqueous absorbent for SO_2 capture. This aqueous solution absorbent has the advantages of simple preparation, good physicochemical properties, environment-friendliness, high ability in deep removal of SO_2, and excellent reusability. Moreover, pH-responsive behavior, pH buffering absorption mechanism, and their synergistic effect on absorption performance were revealed. The solubilities of SO_2 in the absorbent were measured in detail, and the results demonstrated excellent absorption capacity and recyclability. Then, mathematic models that describe SO_2 absorption equilibrium were established, and the corresponding parameters were estimated. More importantly, on the basis of model and experimental data, the absorption and desorption could maintain high efficiency within a wide operating region. In summary, this work provided a low-cost, efficient, and unique absorbent for SO_2 capture and verified its technical feasibility in industrial application.展开更多
NOC（network-on-chip）设计中,最重要的问题是如何提高NOC的性能并减小延时。通讯网络中的的节点结构对NOC的性能和延时有着重要影响。而其中通讯节点虚拟通道的buffer深度尤为关键。通过NIRGAM（NOC Interconnect Routing and Ap plic...NOC（network-on-chip）设计中,最重要的问题是如何提高NOC的性能并减小延时。通讯网络中的的节点结构对NOC的性能和延时有着重要影响。而其中通讯节点虚拟通道的buffer深度尤为关键。通过NIRGAM（NOC Interconnect Routing and Ap plication Modeling）仿真器对一个基于XY路由算法的3×4的2D-Mesh结构NOC进行研究。分析结果表明：通讯节点虚拟通道的输入FIFO（First-In-Fist-Out）的buffer深度大于等于6时,NOC即得到优化。而该buffer深度为6到16时,优化效果并不理想。展开更多
Porous SiO_(2)film has been widely studied due to its extensive applications in many fields.This paper presents a newly produced porous SiO_(2)film made by traditional sol-gel method.Bare Si and Si with SiO_(2)buffer ...Porous SiO_(2)film has been widely studied due to its extensive applications in many fields.This paper presents a newly produced porous SiO_(2)film made by traditional sol-gel method.Bare Si and Si with SiO_(2)buffer layer were used as substrate.The SiO_(2)buffer layer was 500 nm in thickness and was grown by thermal oxidization.The structural properties of SiO_(2)aerogel films spincoated on both materials were observed by optical microscope(OM)and scanning electron microscope(SEM).Results reveal that the surface of SiO_(2)aerogel films on bare Si is rough and discontinuous.While flat and smooth surface is observed on sample with SiO_(2)buffer layer.This indicates that by inserting SiO_(2)buffer layer,the structural property of SiO_(2)aerogel film deposited on Si is improved.展开更多
In this paper,we report a continuous deposition method for double-sided CeO2/YSZ/Y2O3 buffer layers by reel-to-reel in a D.C.magnetron reactive sputtering system.X-ray diffraction exhibited all the samples were highly...In this paper,we report a continuous deposition method for double-sided CeO2/YSZ/Y2O3 buffer layers by reel-to-reel in a D.C.magnetron reactive sputtering system.X-ray diffraction exhibited all the samples were highly c-axis oriented and atomic force microscope observations revealed a smooth,dense and crack-free surface morphology.Out-of-plane,in-plane texture,and surface roughness of multi-buffer layers were improved under optimized deposition conditions.Full width at half maximum(FWHM)values of out-of-plane and in-plane were about 4°and 5.5°in 50 cm double-sided buffed template.YBa2Cu3O7-δfilms with thickness of 1.2μm were deposited on both sides of the buffed tape.Both sides showed similar critical current density,Jc(77 K,self field)as 0.8 MA/cm2 and 0.7 MA/cm2,respectively.展开更多
Anammox bacteria grow slowly and can be affected by large pH fluctuations.Using suitable buffers could make the start-up of anammox reactors easy and rapid.In this study,the effects of three kinds of buffers on the ni...Anammox bacteria grow slowly and can be affected by large pH fluctuations.Using suitable buffers could make the start-up of anammox reactors easy and rapid.In this study,the effects of three kinds of buffers on the nitrogen removal and growth characteristics of anammox sludge were investigated.Reactors with CO_(2)/NaHCO_(3)buffer solution(CCBS)performed the best in nitrogen removal,while 4-(2-hydroxyerhyl)piperazine-1-ethanesulfonic acid(HEPES)and phosphate buffer solution(PBS)inhibited the anammox activity.Reactors with 50 mmol/L CCBS could start up in 20 days,showing the specific anammox activity and anammox activity of 1.01±0.10 gN/(gVSS·day)and 0.83±0.06 kgN/(m^(3)·day),respectively.Candidatus Kuenenia was the dominant anammox bacteria,with a relative abundance of 71.8%.Notably,anammox reactors could also start quickly by using 50 mmol/L CCBS under nonstrict anaerobic conditions.These findings are meaningful for the quick start-up of engineered anammox reactors and prompt enrichment of anammox bacteria.展开更多
Values of the second thermodynamic dissociation constant pK2 of the protonated form of monosodium 1,4-piperazinediethanesulfonate (PIPES) have been determined at twelve different temperatures in the temperature range ...Values of the second thermodynamic dissociation constant pK2 of the protonated form of monosodium 1,4-piperazinediethanesulfonate (PIPES) have been determined at twelve different temperatures in the temperature range from (278.15 to 328.15) K including the body temperature 310.15 K by measurement of the electromotive-force for cells without liquid junction of the type: Pt (s), H2 (g), 101.325 kPa|Na-PIPES (m1) + Na 2-PIPES (m2) + NaCl (m3)|AgCl (s), Ag (s), where m1, m2 and m3 indicate the molalities of the corresponding species at 1 atm = 101.325 kPa in SI units. The pK2 values for the dissociation of Na-PIPES are represented by the equation: pK2 = -1303.76/T + 48.369 - 6.46889 lnT with an uncertainty of ± 0.001. The values of pK2 for Na-PIPES were found to be 7.1399 ± 0.0004 at 298.15 K and 7.0512 ± 0.0004 at 310.15 K, respectively, and indicate that this buffer would be useful as pH standard in the range of physiological application. Standard thermodynamic quantities for the acidic dissociation process of Na-PIPES have been derived from the temperature coefficients of the pK2. These values are compared with those of structurally related N-substituted PIPERAZINE and TAURINE at 298.15 K.展开更多
基金supported by the National Key Research and Development Program of China(No.2021YFA0715600)the National Natural Science Foundation of China(Nos.62274125,52192611)+2 种基金the Guangdong Basic and Applied Basic Research Fund(No.2023A1515030084)the Key Research and Development Program of Shaanxi Province(Grant No.2024GX-YBXM-410)the fund of the State Key Laboratory of Solidification Processing in NWPU(No.SKLSP202220).
文摘Optimizing the orientation of β-Ga_(2)O_(3) has emerged as an effective strategy to design high-performance β-Ga_(2)O_(3) device,but the orientation growth mechanism and approach have not been revealed yet.Herein,by employing AlN buffer layer,the highly preferred orientation of β-Ga_(2)O_(3)(100)film rather than(-201)film is realized on 4H-SiC substrate at low sputtering power and temperature.Because β-Ga_(2)O_(3)(100)film exhibits a slower growth speed than(-201)film,the former possesses the higher dangling bond density and the lower nucleation energy,and a large conversion barrier exists between these two ori-entations.Moreover,the AlN buffer layer can suppress the surface oxidation of the 4H-SiC substrate and eliminate the strain of β-Ga_(2)O_(3)(100)film,which further reduces the nucleation energy and en-larges the conversion barrier.Meanwhile,the AlN buffer layer can increase the oxygen vacancy formation energy and decrease the oxygen vacancy concentration of β-Ga_(2)O_(3)(100)film.Consequently,the solar-blind photodetector based on the oriented film exhibits the outstanding detectivity of 1.22×10^(12) Jones and photo-to-dark current ratio of 1.11×10^(5),which are the highest among the reported β-Ga_(2)O_(3) solar-blind photodetector on the SiC substrate.Our results offer in-depth insights into the preferred orientation growth mechanism,and provide an effective way to design high-quality β-Ga_(2)O_(3)(100)orientation film and high-performance solar-blind photodetector.
基金conducted under the framework of the research and development program of the Korea Institute of Energy Research(C4-2412 and C4-2413)supported by the National Research Foundation of Korea(grant number 2022M3J1A1063019)funded by the Ministry of Science and ICT.
文摘Attempts to remove environmentally harmful materials in mass production industries are always a major issue and draw attention if the substitution guarantees a chance to lower fabrication cost and to improve device performance,as in a wide bandgap Zn_(1-x)Mg_(x)O(ZMO)to replace the CdS buffer in Cu(In_(1-x),Ga_(x))Se_(2)(CIGSe)thin-film solar cell structure.ZMO is one of the candidates for the buffer material in CIGSe thin-film solar cells with a wide and controllable bandgap depending on the Mg content,which can be helpful in attaining a suitable conduction band offset.Hence,compared to the fixed and limited bandgap of a CdS buffer,a ZMO buffer may provide advantages in V_(oc) and J_(sc) based on its controllable and wide bandgap,even with a relatively wider bandgap CIGSe thin-film solar cell.In addition,to solve problems with the defect sites at the ZMO/CIGSe junction interface,a few-nanometer ZnS layer is employed for heterojunction interface passivation,forming a ZMO/ZnS buffer structure by atomic layer deposition(ALD).Finally,a Cd-free all-dry-processed CIGSe solar cell with a wider bandgap(1.25 eV)and ALD-grown buffer structure exhibited the best power conversion efficiency of 19.1%,which exhibited a higher performance than the CdS counterpart.
文摘The CO_2-seawater system and the method for calculating the partial pressure of CO2 (pCO2) in seawater are studied. The buffer capability of the ocean to increasing atmospheric CO2 is expressed in terms of the differential buffer factor and buffer index. Dissolutions of aragonite and calcite have a significant inffluence on the differential buffer factor. The trend of change in the buffer factor is obtained by a box model.
基金financially supported by the National Natural Science Foundation of China (Nos. 51401046, 51572042, 61131005, 61021061, and 61271037)International Cooperation Projects (Nos. 2013HH0003 and 2015DFR50870)+3 种基金the 111 Project (No. B13042)the Sichuan Province S&T program (Nos. 2014GZ0003, 2015GZ0091, and 2015GZ0069)Fundamental Research Funds for the Central Universitiesthe start-up fund from the University of Electronic Science and Technology of China
文摘VO_2 thin films were grown on silicon substrates using Al_2O_3 thin films as the buffer layers. Compared with direct deposition on silicon, VO_2 thin films deposited on Al_2O_3 buffer layers experience a significant improvement in their microstructures and physical properties. By optimizing the growth conditions, the resistance of VO_2 thin films can change by four orders of magnitude with a reduced thermal hysteresis of 4 °C at the phase transition temperature. The electrically driven phase transformation was measured in Pt/Si/Al_2O_3/VO_2/Au heterostructures. The introduction of a buffer layer reduces the leakage current and Joule heating during electrically driven phase transitions. The C–V measurement result indicates that the phase transformation of VO_2 thin films can be induced by an electrical field.
基金Project supported by the National Natural Science Foundation of China (Grant No.12274108)the Natural Science Foundation of Zhejiang Province,China (Grant Nos.LY23A040008 and LY23A040008)the Basic Scientific Research Project of Wenzhou,China (Grant No.G20220025)。
文摘Field-free spin-orbit torque(SOT)switching of perpendicular magnetization is essential for future spintronic devices.This study demonstrates the field-free switching of perpendicular magnetization in an HfO_(2)/Pt/Co/TaO_(x) structure,which is facilitated by a wedge-shaped HfO_(2)buffer layer.The field-free switching ratio varies with HfO_(2)thickness,reaching optimal performance at 25 nm.This phenomenon is attributed to the lateral anisotropy gradient of the Co layer,which is induced by the wedge-shaped HfO_(2)buffer layer.The thickness gradient of HfO_(2)along the wedge creates a corresponding lateral anisotropy gradient in the Co layer,correlating with the switching ratio.These findings indicate that field-free SOT switching can be achieved through designing buffer layer,offering a novel approach to innovating spin-orbit device.
基金financially supported by the China Postdoctoral Science Foundation(2021M700396)the National Natural Science Foundation of China(52102206)the research grants from the National Research Foundation(2022K1A3A1A20014496 and 2022R1F1A1074707)funded by the government of the Republic of Korea。
文摘Li_(1.3)Al_(0.3)Ti_(1.7)(PO_(4))_(3)(LATP),of much interest owing to its high ionic conductivity,superior air stability,and low cost,has been regarded as one of the most promising solid-state electrolytes for next-generation solid-state lithium batteries(SSLBs).Unfortunately,the commercialization of SSLBs is still impeded by severe interfacial issues,such as high interfacial impedance and poor chemical stability.Herein,we proposed a simple and convenient in-situ approach to constructing a tight and robust interface between the Li anode and LATP electrolyte via a SnO_(2)gradient buffer layer.It is firmly attached to the surface of LATP pellets due to the volume expansion of SnO_(2)when in-situ reacting with Li metal,and thus effectively alleviates the physical contact loosening during cycling,as confirmed by the mitigated impedance rising.Meanwhile,the as-formed SnO_(2)/Sn/LixSn gradient buffer layer with low electronic conductivity successfully protects the LATP electrolyte surface from erosion by the Li metal anode.Additionally,the LixSn alloy formed at the Li surface can effectively regulate uniform lithium deposition and suppress Li dendrite growth.Therefore,this work paves a new way to simultaneously address the chemical instability and poor physical contact of LATP with Li metal in developing low-cost and highly stable SSLBs.
基金Project supported by the Foundation of the Education Commission of Shanghai Municipality (Grant Nos.07ZZ14, 08SG41)the National Natural Science Foundation of China (Grant No.50711130241)the Shanghai Rising Star Program (GrantNo.08QH14008)
文摘Ba0.6Sr0.4TiO3 （BST） thin films with and without HfO 2 buffer layer were fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition. Dependences of HfO 2 thickness on the dielectric property and leakage current of BST thin films were focused. The dielectric constant of BST thin films increased and then decreased with the increase of HfO 2 thickness, while the dielectric relaxation was gradually improved. The loss tangent and leakage current under positive bias decreased with the HfO 2 thickness increasing. The leakage current analysis based on the Schottky emission indicated an improvement of the BST/Pt interface with HfO 2 buffer layer. The loss tangent, tunability and figure of merit of optimized HfO 2 buffered BST thin film achieved 0.009 8, 21.91% （E max = 200 kV/cm）, 22.40 at 10 6 Hz, respectively.
基金National Basic Research Program"973"of China(2006CB601005)National Natural Science Foundation of China(50771003)National High Technology Research and Development Program of"863"(2009AA032401)
文摘The metal organic deposition(MOD)method was used for the epitaxial growth of the CeO2/La2Zr2O7(LZO)/LZO seed layer structure on a cube-textured Ni5W substrate layer by layer.The material phase and the macro-orientations were analyzed by XRD.The surface morphology and the blocking performance of the buffer layer were investigated by SEM and AES.The grain orientation and the crystallographic growth mode of the CeO2 layer were first characterized by electron backscattering diffraction(EBSD).The uniformly distributed islanded LZO seed layer optimized both the in-plan and the out-plan orientation of the CeO2/LZO buffer layers,and the CeO2/LZO buffer layers with a thickness of 175 nm acted as an efficient Ni,W barrier.The EBSD analysis indicated that the crystallographic orientation of each layer can be obtained at various accelerating voltages for the multilayer sample,the percentage of{001}<110>rotated cube texture of CeO2 layer reaching 97.4%at the accelerating voltage of 15 kV,thus showing epitaxial deposition with a high texture.
文摘The CeO2 and Y2O3 buffer layers were deposited on the cube textured metallic Ni substrates by using reactive magnetron sputtering. Ar/H2 mixed atmosphere, which is used as pre-depositing gas, can effectively inhibit the formation of NiO. In addition, the linear relationship between pre-depositing time and total depositing time is required to ensure the epitaxial growth of the films. The growth conditions of CeO2 and Y2O3 were comparatively studied, and it is found that the windows of substrate temperatures and pressures for CeO2 films are wider than that for Y2O3 films.
基金Project supported by the National Basic Research Program of China(Grant Nos.2011CB921801 and 2012CB933102)the National Natural Science Foundation of China(Grant Nos.11374350,11034004,11274361,and 11274033)the Research Fund for the Doctoral Program of Higher Education of China(Grant No.20131102130005)
文摘Buffer layer provides an opportunity to enhance the quality of ultrathin magnetic films. In this paper, Co films with different thickness of Co Si2 buffer layers were grown on Si（001） substrates. In order to investigate morphology, structure,and magnetic properties of films, scanning tunneling microscope（STM）, low energy electron diffraction（LEED）, high resolution transmission electron microscopy（HRTEM）, and surface magneto-optical Kerr effect（SMOKE） were used. The results show that the crystal quality and magnetic anisotropies of the Co films are strongly affected by the thickness of Co Si2 buffer layers. Few Co Si2 monolayers can prevent the interdiffusion of Si substrate and Co film and enhance the Co film quality. Furthermore, the in-plane magnetic anisotropy of Co film with optimal buffer layer shows four-fold symmetry and exhibits the two-jumps of magnetization reversal process, which is the typical phenomenon in cubic（001） films.
文摘The buffer layer CeO2 films were grown on cube textured metallic Ni substrates by using reactive magnetrun sputtering. Ar/H2 mixed atmosphere, which effectively inhibited the formation of NiO, was used as pre-depositing gas before CeO2 films were grown in Ar and 02. At 700 ℃ under the total pressure of 26 Pa,the pure c-axis orientation tilm was obtained. X-ray θ-2θscan, pole figure and φ-scan were used to observe the microstructure of the buffer layer. The resuits show that CeO2 film has strong cube texture and the FWHM is 9°. In addition, the CeO2 film is dense and crack-free.
基金supported by the National Key R&D Program of China (No. 2016YFC0400406)
文摘An organic macromolecule, poly(1-vinylimidazole), with an appropriate polymerization degree was proposed and mixed with water to form a novel aqueous absorbent for SO_2 capture. This aqueous solution absorbent has the advantages of simple preparation, good physicochemical properties, environment-friendliness, high ability in deep removal of SO_2, and excellent reusability. Moreover, pH-responsive behavior, pH buffering absorption mechanism, and their synergistic effect on absorption performance were revealed. The solubilities of SO_2 in the absorbent were measured in detail, and the results demonstrated excellent absorption capacity and recyclability. Then, mathematic models that describe SO_2 absorption equilibrium were established, and the corresponding parameters were estimated. More importantly, on the basis of model and experimental data, the absorption and desorption could maintain high efficiency within a wide operating region. In summary, this work provided a low-cost, efficient, and unique absorbent for SO_2 capture and verified its technical feasibility in industrial application.
文摘NOC（network-on-chip）设计中,最重要的问题是如何提高NOC的性能并减小延时。通讯网络中的的节点结构对NOC的性能和延时有着重要影响。而其中通讯节点虚拟通道的buffer深度尤为关键。通过NIRGAM（NOC Interconnect Routing and Ap plication Modeling）仿真器对一个基于XY路由算法的3×4的2D-Mesh结构NOC进行研究。分析结果表明：通讯节点虚拟通道的输入FIFO（First-In-Fist-Out）的buffer深度大于等于6时,NOC即得到优化。而该buffer深度为6到16时,优化效果并不理想。
基金financially supported by the National Natural Science Foundation of China(No.51102037)the Fundamental Research Funds for the Central Universities from UESTC(Nos.ZYGX2010J030 and ZYGX2011J023)。
文摘Porous SiO_(2)film has been widely studied due to its extensive applications in many fields.This paper presents a newly produced porous SiO_(2)film made by traditional sol-gel method.Bare Si and Si with SiO_(2)buffer layer were used as substrate.The SiO_(2)buffer layer was 500 nm in thickness and was grown by thermal oxidization.The structural properties of SiO_(2)aerogel films spincoated on both materials were observed by optical microscope(OM)and scanning electron microscope(SEM).Results reveal that the surface of SiO_(2)aerogel films on bare Si is rough and discontinuous.While flat and smooth surface is observed on sample with SiO_(2)buffer layer.This indicates that by inserting SiO_(2)buffer layer,the structural property of SiO_(2)aerogel film deposited on Si is improved.
文摘In this paper,we report a continuous deposition method for double-sided CeO2/YSZ/Y2O3 buffer layers by reel-to-reel in a D.C.magnetron reactive sputtering system.X-ray diffraction exhibited all the samples were highly c-axis oriented and atomic force microscope observations revealed a smooth,dense and crack-free surface morphology.Out-of-plane,in-plane texture,and surface roughness of multi-buffer layers were improved under optimized deposition conditions.Full width at half maximum(FWHM)values of out-of-plane and in-plane were about 4°and 5.5°in 50 cm double-sided buffed template.YBa2Cu3O7-δfilms with thickness of 1.2μm were deposited on both sides of the buffed tape.Both sides showed similar critical current density,Jc(77 K,self field)as 0.8 MA/cm2 and 0.7 MA/cm2,respectively.
基金supported by the National Natural Science Foundation of China(No.52070162)。
文摘Anammox bacteria grow slowly and can be affected by large pH fluctuations.Using suitable buffers could make the start-up of anammox reactors easy and rapid.In this study,the effects of three kinds of buffers on the nitrogen removal and growth characteristics of anammox sludge were investigated.Reactors with CO_(2)/NaHCO_(3)buffer solution(CCBS)performed the best in nitrogen removal,while 4-(2-hydroxyerhyl)piperazine-1-ethanesulfonic acid(HEPES)and phosphate buffer solution(PBS)inhibited the anammox activity.Reactors with 50 mmol/L CCBS could start up in 20 days,showing the specific anammox activity and anammox activity of 1.01±0.10 gN/(gVSS·day)and 0.83±0.06 kgN/(m^(3)·day),respectively.Candidatus Kuenenia was the dominant anammox bacteria,with a relative abundance of 71.8%.Notably,anammox reactors could also start quickly by using 50 mmol/L CCBS under nonstrict anaerobic conditions.These findings are meaningful for the quick start-up of engineered anammox reactors and prompt enrichment of anammox bacteria.
文摘Values of the second thermodynamic dissociation constant pK2 of the protonated form of monosodium 1,4-piperazinediethanesulfonate (PIPES) have been determined at twelve different temperatures in the temperature range from (278.15 to 328.15) K including the body temperature 310.15 K by measurement of the electromotive-force for cells without liquid junction of the type: Pt (s), H2 (g), 101.325 kPa|Na-PIPES (m1) + Na 2-PIPES (m2) + NaCl (m3)|AgCl (s), Ag (s), where m1, m2 and m3 indicate the molalities of the corresponding species at 1 atm = 101.325 kPa in SI units. The pK2 values for the dissociation of Na-PIPES are represented by the equation: pK2 = -1303.76/T + 48.369 - 6.46889 lnT with an uncertainty of ± 0.001. The values of pK2 for Na-PIPES were found to be 7.1399 ± 0.0004 at 298.15 K and 7.0512 ± 0.0004 at 310.15 K, respectively, and indicate that this buffer would be useful as pH standard in the range of physiological application. Standard thermodynamic quantities for the acidic dissociation process of Na-PIPES have been derived from the temperature coefficients of the pK2. These values are compared with those of structurally related N-substituted PIPERAZINE and TAURINE at 298.15 K.
