Attempts to remove environmentally harmful materials in mass production industries are always a major issue and draw attention if the substitution guarantees a chance to lower fabrication cost and to improve device pe...Attempts to remove environmentally harmful materials in mass production industries are always a major issue and draw attention if the substitution guarantees a chance to lower fabrication cost and to improve device performance,as in a wide bandgap Zn_(1-x)Mg_(x)O(ZMO)to replace the CdS buffer in Cu(In_(1-x),Ga_(x))Se_(2)(CIGSe)thin-film solar cell structure.ZMO is one of the candidates for the buffer material in CIGSe thin-film solar cells with a wide and controllable bandgap depending on the Mg content,which can be helpful in attaining a suitable conduction band offset.Hence,compared to the fixed and limited bandgap of a CdS buffer,a ZMO buffer may provide advantages in V_(oc) and J_(sc) based on its controllable and wide bandgap,even with a relatively wider bandgap CIGSe thin-film solar cell.In addition,to solve problems with the defect sites at the ZMO/CIGSe junction interface,a few-nanometer ZnS layer is employed for heterojunction interface passivation,forming a ZMO/ZnS buffer structure by atomic layer deposition(ALD).Finally,a Cd-free all-dry-processed CIGSe solar cell with a wider bandgap(1.25 eV)and ALD-grown buffer structure exhibited the best power conversion efficiency of 19.1%,which exhibited a higher performance than the CdS counterpart.展开更多
Single-junction,lattice-mismatched In0.69Ga0.31As thermophotovoltaic（TPV） devices each with a bandgap of 0.6 eV are grown on InP substrate by metal-organic chemical vapour deposition（MOCVD）.Compositionally undulat...Single-junction,lattice-mismatched In0.69Ga0.31As thermophotovoltaic（TPV） devices each with a bandgap of 0.6 eV are grown on InP substrate by metal-organic chemical vapour deposition（MOCVD）.Compositionally undulating stepgraded InAsyP1-y buffer layers with a lattice mismatch of ～1.2% are used to mitigate the effect of lattice mismatch between the device layers and the InP substrate.With an optimized buffer thickness,the In0.69Ga0.31As active layers grown on the buffer display a high crystal quality with no measurable tetragonal distortion.High-performance single-junction devices are demonstrated,with an open-circuit voltage of 0.215 V and a photovoltaic conversion efficiency of 6.9% at a short-circuit current density of 47.6 mA/cm2,which are measured under the standard solar simulator of air mass 1.5-global（AM 1.5 G）.展开更多
High-quality MgxZn1-xO thin films were grown on sapphire（0001 ） substrates with a ZnO buffer layer of different thicknesses by means of metal-organic chemical vapor deposition. Diethyl zinc, bis-cyclopentadienyl-Mg ...High-quality MgxZn1-xO thin films were grown on sapphire（0001 ） substrates with a ZnO buffer layer of different thicknesses by means of metal-organic chemical vapor deposition. Diethyl zinc, bis-cyclopentadienyl-Mg and oxygen were used as the precursor materials. The crystalline quality, surface morphologies and optical properties of the Mg, Zn1-xO films were investigated by X-ray diffraction, atomic force microscopy and photoluminescence spectrometry. It was shown that the quality of the MgxZn1-xO thin films depends on the thickness of the ZnO buffer layer and an Mg, Zn1-xO thin film with a ZnO buffer layer whose thickness was 20 nm exhibited the best crystal-quality, optical properties and a flat and dense surface.展开更多
The InAs/AlSb heterostructures with step-graded GaAsxSb1-x metamorphic buffer layers grown on Si substrates by molecular beam epitaxy are studied. The step-graded GaAsxSb1-x metamorphic buffer layers are used to relax...The InAs/AlSb heterostructures with step-graded GaAsxSb1-x metamorphic buffer layers grown on Si substrates by molecular beam epitaxy are studied. The step-graded GaAsxSb1-x metamorphic buffer layers are used to relax the strain and block defects at each interface of the layers. Meanwhile, adding Sb to GaAs is also beneficial to suppressing the formation of dislocations in the subsequent materials. The influences of the growth temperature of the step-graded GaAsxSb1-x metamorphic buffer layer on the electron mobility and surface topography are investigated for a series of samples. Based on the atomic force microscopy（AFM）, high resolution x-ray diffraction（HRXRD）, reciprocal space map（RSM）, and Hall measurements, the crystal quality and composition of GaAsxSb1-x layer are seen to strongly depend on growth temperature while keeping the Ga growth rate and V/III ratio constant. The results show that the highest electron mobility is 10270 cm2/V·s and the roughness is 4.3 nm for the step-graded GaAsxSb1-x metamorphic buffer layer grown at a temperature of 410℃.展开更多
In copper oxide (CuO) based solar cells, various buffer layers such as CdS, In<sub>2</sub>S<sub>3</sub>, WS<sub>2</sub> and IGZO have been investigated by solar cell capacitance sim...In copper oxide (CuO) based solar cells, various buffer layers such as CdS, In<sub>2</sub>S<sub>3</sub>, WS<sub>2</sub> and IGZO have been investigated by solar cell capacitance simulator (SCAPS) in this work. By varying absorber and buffer layer thickness, photovoltaic parameters (open circuit voltage, fill factor, short-circuit current density and efficiency) are determined. The highest efficiency achieved is 19.6% with WS<sub>2</sub> buffer layer. The impact of temperature on all CuO-based solar cells is also investigated.展开更多
This paper describes the function,structure and working status of the data buffer unitDBU,one of the most important functional units on ITM-1.It also discusses DBU’s supportto the multiprocessor system and Prolog lan...This paper describes the function,structure and working status of the data buffer unitDBU,one of the most important functional units on ITM-1.It also discusses DBU’s supportto the multiprocessor system and Prolog language.展开更多
1, 3-Dimethyluracil （DMU） in phosphate buffered-saline （PBS, pH=8） was irradiated by a medium pressure mercury lamp （MPML） and produced a novel compound C6H9N2O6P. The composition and structure of the compound h...1, 3-Dimethyluracil （DMU） in phosphate buffered-saline （PBS, pH=8） was irradiated by a medium pressure mercury lamp （MPML） and produced a novel compound C6H9N2O6P. The composition and structure of the compound has been identified by elemental analysis, EIMS, UV, IR, ^1H and ^31P-NMR.展开更多
BACKGROUND The needs for human epidermal growth factor receptor 2(HER-2) and/or programmed death-ligand 1(PD-L1) evaluations in gastric cancer are dramatically increasing. Although the importance of standardization of...BACKGROUND The needs for human epidermal growth factor receptor 2(HER-2) and/or programmed death-ligand 1(PD-L1) evaluations in gastric cancer are dramatically increasing. Although the importance of standardization of sample fixation has been widely recognized, most of the evidence regarding the fixation duration or type of fixing solution are based on breast cancer.AIM To investigate the real effects of fixation conditions on HER-2 testing or PD-L1 testing for gastric cancer using gastrectomy specimens.METHODS Thirty-two patients who underwent gastrectomy for gastric cancer were enrolled.Their resected specimens were each divided into four pieces and fixed in four strictly controlled different durations(6 h, 24 h, and 48 h, and 1 wk) by 10%formalin(n = 22) or 10% neutral buffered formalin(NBF)(n = 10).Immunohistochemistry(IHC) of HER-2 and PD-1 was performed, and a pathology examination was conducted. In the HER-2-immunoreactive cases, all four specimens were subjected to dual-color in situ hybridization(DISH). Five cases were assessed as HER-2-positive by IHC and DISH. We used the cut-off values of 1%, 10%, and 50% to assess the IHC findings of PD-L1.RESULTS No significant difference was observed in comparisons between the shorter fixation period groups(6 h, 24 h, and 48 h) and the prolonged fixation period(1 wk) group in the HER-2 and PD-L1 analyses. Although no significant difference was observed between 10% formalin and 10% NBF within 1 wk of fixation, the superiority of 10% NBF was confirmed in a long-term(> 3 mo) fixation in both the HER-2 and PD-L1 analyses.CONCLUSION In this small-numbered pilot study, prolonged fixation within 1 wk showed no inferiority in HER-2 or PD-L1 testing. However, a large-numbered prospective study is needed to obtain conclusive results.展开更多
In this paper we report that the GaN thin film is grown by metal-organic chemical vapour deposition on a sapphire （0001） substrate with double A1N buffer layers. The buffer layer consists of a low-temperature （LT）...In this paper we report that the GaN thin film is grown by metal-organic chemical vapour deposition on a sapphire （0001） substrate with double A1N buffer layers. The buffer layer consists of a low-temperature （LT） A1N layer and a high-temperature （HT） A1N layer that are grown at 600 ℃ and 1000 ℃, respectively. It is observed that the thickness of the LT-A1N layer drastically influences the quality of GaN thin film, and that the optimized 4.25-min-LT-A1N layer minimizes the dislocation density of GaN thin film. The reason for the improved properties is discussed in this paper.展开更多
基金conducted under the framework of the research and development program of the Korea Institute of Energy Research(C4-2412 and C4-2413)supported by the National Research Foundation of Korea(grant number 2022M3J1A1063019)funded by the Ministry of Science and ICT.
文摘Attempts to remove environmentally harmful materials in mass production industries are always a major issue and draw attention if the substitution guarantees a chance to lower fabrication cost and to improve device performance,as in a wide bandgap Zn_(1-x)Mg_(x)O(ZMO)to replace the CdS buffer in Cu(In_(1-x),Ga_(x))Se_(2)(CIGSe)thin-film solar cell structure.ZMO is one of the candidates for the buffer material in CIGSe thin-film solar cells with a wide and controllable bandgap depending on the Mg content,which can be helpful in attaining a suitable conduction band offset.Hence,compared to the fixed and limited bandgap of a CdS buffer,a ZMO buffer may provide advantages in V_(oc) and J_(sc) based on its controllable and wide bandgap,even with a relatively wider bandgap CIGSe thin-film solar cell.In addition,to solve problems with the defect sites at the ZMO/CIGSe junction interface,a few-nanometer ZnS layer is employed for heterojunction interface passivation,forming a ZMO/ZnS buffer structure by atomic layer deposition(ALD).Finally,a Cd-free all-dry-processed CIGSe solar cell with a wider bandgap(1.25 eV)and ALD-grown buffer structure exhibited the best power conversion efficiency of 19.1%,which exhibited a higher performance than the CdS counterpart.
基金Project supported by the National Basic Research Program of China (Grant No. 61176128)the Knowledge Innovation Project of the Chinese Academy of SciencesSuzhou Municipal Solar Cell Research Project,China (Grant No. SYG201145)
文摘Single-junction,lattice-mismatched In0.69Ga0.31As thermophotovoltaic（TPV） devices each with a bandgap of 0.6 eV are grown on InP substrate by metal-organic chemical vapour deposition（MOCVD）.Compositionally undulating stepgraded InAsyP1-y buffer layers with a lattice mismatch of ～1.2% are used to mitigate the effect of lattice mismatch between the device layers and the InP substrate.With an optimized buffer thickness,the In0.69Ga0.31As active layers grown on the buffer display a high crystal quality with no measurable tetragonal distortion.High-performance single-junction devices are demonstrated,with an open-circuit voltage of 0.215 V and a photovoltaic conversion efficiency of 6.9% at a short-circuit current density of 47.6 mA/cm2,which are measured under the standard solar simulator of air mass 1.5-global（AM 1.5 G）.
文摘High-quality MgxZn1-xO thin films were grown on sapphire（0001 ） substrates with a ZnO buffer layer of different thicknesses by means of metal-organic chemical vapor deposition. Diethyl zinc, bis-cyclopentadienyl-Mg and oxygen were used as the precursor materials. The crystalline quality, surface morphologies and optical properties of the Mg, Zn1-xO films were investigated by X-ray diffraction, atomic force microscopy and photoluminescence spectrometry. It was shown that the quality of the MgxZn1-xO thin films depends on the thickness of the ZnO buffer layer and an Mg, Zn1-xO thin film with a ZnO buffer layer whose thickness was 20 nm exhibited the best crystal-quality, optical properties and a flat and dense surface.
基金Project supported by the National Defense Advanced Research Project,China(Grant No.315 xxxxx301)the National Defense Innovation Program,China(Grant No.48xx4)+2 种基金the National Key Technologies Research and Development Program,China(Grant No.2018YFA0306101)the Scientific Instrument Developing Project of the Chinese Academy of Sciences(Grant No.YJKYYQ20170032)the National Natural Science Foundation of China(Grant No.61505196)
文摘The InAs/AlSb heterostructures with step-graded GaAsxSb1-x metamorphic buffer layers grown on Si substrates by molecular beam epitaxy are studied. The step-graded GaAsxSb1-x metamorphic buffer layers are used to relax the strain and block defects at each interface of the layers. Meanwhile, adding Sb to GaAs is also beneficial to suppressing the formation of dislocations in the subsequent materials. The influences of the growth temperature of the step-graded GaAsxSb1-x metamorphic buffer layer on the electron mobility and surface topography are investigated for a series of samples. Based on the atomic force microscopy（AFM）, high resolution x-ray diffraction（HRXRD）, reciprocal space map（RSM）, and Hall measurements, the crystal quality and composition of GaAsxSb1-x layer are seen to strongly depend on growth temperature while keeping the Ga growth rate and V/III ratio constant. The results show that the highest electron mobility is 10270 cm2/V·s and the roughness is 4.3 nm for the step-graded GaAsxSb1-x metamorphic buffer layer grown at a temperature of 410℃.
文摘In copper oxide (CuO) based solar cells, various buffer layers such as CdS, In<sub>2</sub>S<sub>3</sub>, WS<sub>2</sub> and IGZO have been investigated by solar cell capacitance simulator (SCAPS) in this work. By varying absorber and buffer layer thickness, photovoltaic parameters (open circuit voltage, fill factor, short-circuit current density and efficiency) are determined. The highest efficiency achieved is 19.6% with WS<sub>2</sub> buffer layer. The impact of temperature on all CuO-based solar cells is also investigated.
基金the High Technology Research and Development Programme of china.
文摘This paper describes the function,structure and working status of the data buffer unitDBU,one of the most important functional units on ITM-1.It also discusses DBU’s supportto the multiprocessor system and Prolog language.
基金The project was supported by the National Natural Science Foundation of China(No:20171038).
文摘1, 3-Dimethyluracil （DMU） in phosphate buffered-saline （PBS, pH=8） was irradiated by a medium pressure mercury lamp （MPML） and produced a novel compound C6H9N2O6P. The composition and structure of the compound has been identified by elemental analysis, EIMS, UV, IR, ^1H and ^31P-NMR.
文摘BACKGROUND The needs for human epidermal growth factor receptor 2(HER-2) and/or programmed death-ligand 1(PD-L1) evaluations in gastric cancer are dramatically increasing. Although the importance of standardization of sample fixation has been widely recognized, most of the evidence regarding the fixation duration or type of fixing solution are based on breast cancer.AIM To investigate the real effects of fixation conditions on HER-2 testing or PD-L1 testing for gastric cancer using gastrectomy specimens.METHODS Thirty-two patients who underwent gastrectomy for gastric cancer were enrolled.Their resected specimens were each divided into four pieces and fixed in four strictly controlled different durations(6 h, 24 h, and 48 h, and 1 wk) by 10%formalin(n = 22) or 10% neutral buffered formalin(NBF)(n = 10).Immunohistochemistry(IHC) of HER-2 and PD-1 was performed, and a pathology examination was conducted. In the HER-2-immunoreactive cases, all four specimens were subjected to dual-color in situ hybridization(DISH). Five cases were assessed as HER-2-positive by IHC and DISH. We used the cut-off values of 1%, 10%, and 50% to assess the IHC findings of PD-L1.RESULTS No significant difference was observed in comparisons between the shorter fixation period groups(6 h, 24 h, and 48 h) and the prolonged fixation period(1 wk) group in the HER-2 and PD-L1 analyses. Although no significant difference was observed between 10% formalin and 10% NBF within 1 wk of fixation, the superiority of 10% NBF was confirmed in a long-term(> 3 mo) fixation in both the HER-2 and PD-L1 analyses.CONCLUSION In this small-numbered pilot study, prolonged fixation within 1 wk showed no inferiority in HER-2 or PD-L1 testing. However, a large-numbered prospective study is needed to obtain conclusive results.
基金Project supported by the National Key Science & Technology Special Project,China(Grant No.2008ZX01002-002)the Fundamental Research Funds for the Central Universities,China(Grant No.JY10000904009)the Major Program and State Key Program of the National Natural Science Foundation of China(Grant Nos.60890191 and 60736033)
文摘In this paper we report that the GaN thin film is grown by metal-organic chemical vapour deposition on a sapphire （0001） substrate with double A1N buffer layers. The buffer layer consists of a low-temperature （LT） A1N layer and a high-temperature （HT） A1N layer that are grown at 600 ℃ and 1000 ℃, respectively. It is observed that the thickness of the LT-A1N layer drastically influences the quality of GaN thin film, and that the optimized 4.25-min-LT-A1N layer minimizes the dislocation density of GaN thin film. The reason for the improved properties is discussed in this paper.
