On the basis of thermodynamic and kinetic consideration of Ge-O system,high-pressure oxidation(HPO)on Ge was proposed to suppress the GeO desorption during the thermal oxidation and significant improvements of Ge/GeO2...On the basis of thermodynamic and kinetic consideration of Ge-O system,high-pressure oxidation(HPO)on Ge was proposed to suppress the GeO desorption during the thermal oxidation and significant improvements of Ge/GeO2-based gate stacks have been achieved.It is found that the post oxidation annealing at lower temperatures is helpful to passivate the interface defects at the Ge/GeO2 stack generated by the conventional thermal oxidation,while the high-quality GeO2 bulk properties can only be achieved by HPO that grows GeO2 film at high temperatures without the GeO desorption.This paper reviews the advantage of HPO on the formation of Ge/GeO2 stacks in terms of Ge/GeO2 interface and GeO2 bulk properties.展开更多
MOS capacitors with hafnium oxynitride（HfON）gate dielectrics were fabricated on Ge and Si substrates using the RF reactive magnetron sputtering method.A large amount of fixed charges and interface traps exist at the...MOS capacitors with hafnium oxynitride（HfON）gate dielectrics were fabricated on Ge and Si substrates using the RF reactive magnetron sputtering method.A large amount of fixed charges and interface traps exist at the Ge/HfON interface.HRTEM and XPS analyses show that Ge oxides were grown and diffused into HfON after post metal annealing.A Si nitride interfacial layer was inserted between Ge and HfON as diffusion barrier.Using this method,well behaved capacitance–voltage and current–voltage characteristics were obtained.Finally hystereses are compared under different process conditions and possible causes are discussed.展开更多
1 Introduction As environmental pollution continues to worsen,governments are increasing their efforts to develop green transport vehicles,such as electric vehicles and hybrid cars.
基金The author would like to thank Prof.Akira Toriumi,Prof.Kita Koji,Prof.Kosuke Nagashio,and Dr.Tomonori Nishimura at the University of Tokyo for their continuous support and encouragement,which induced the main results reviewed in this paper.
文摘On the basis of thermodynamic and kinetic consideration of Ge-O system,high-pressure oxidation(HPO)on Ge was proposed to suppress the GeO desorption during the thermal oxidation and significant improvements of Ge/GeO2-based gate stacks have been achieved.It is found that the post oxidation annealing at lower temperatures is helpful to passivate the interface defects at the Ge/GeO2 stack generated by the conventional thermal oxidation,while the high-quality GeO2 bulk properties can only be achieved by HPO that grows GeO2 film at high temperatures without the GeO desorption.This paper reviews the advantage of HPO on the formation of Ge/GeO2 stacks in terms of Ge/GeO2 interface and GeO2 bulk properties.
基金supported by the State Key Development Program for Basic Research of China(No.2006CB302704)
文摘MOS capacitors with hafnium oxynitride（HfON）gate dielectrics were fabricated on Ge and Si substrates using the RF reactive magnetron sputtering method.A large amount of fixed charges and interface traps exist at the Ge/HfON interface.HRTEM and XPS analyses show that Ge oxides were grown and diffused into HfON after post metal annealing.A Si nitride interfacial layer was inserted between Ge and HfON as diffusion barrier.Using this method,well behaved capacitance–voltage and current–voltage characteristics were obtained.Finally hystereses are compared under different process conditions and possible causes are discussed.
基金supported by the National Science Foundation of China(51502009,51532001,21675109)the National Key Basic Research Program of China(2014CB31802)the Science Foundation of Henan province(162300410209)
文摘1 Introduction As environmental pollution continues to worsen,governments are increasing their efforts to develop green transport vehicles,such as electric vehicles and hybrid cars.
