Anti-phase domain defects easily form in the in-plane GaAs nanowires(NWs)grown on CMOS-compatiblegroup IV substrates,which makes it difficult to obtain GaAs NWs with a designed length and also leads to asignificant li...Anti-phase domain defects easily form in the in-plane GaAs nanowires(NWs)grown on CMOS-compatiblegroup IV substrates,which makes it difficult to obtain GaAs NWs with a designed length and also leads to asignificant limitation in the growth of high-quality in-plane GaAs NW networks on such substrates.Here,wereport on the selective area growth of anti-phase domain-free in-plane GaAs NWs and NW networks on Ge(111)substrates.Detailed structural studies confirm that the GaAs NW grown using a large pattern period and GaAsNW networks grown by adding the Sb are both high-quality pure zinc-blende single crystals free of stackingfaults,twin defects,and anti-phase domain defects.Room-temperature photoluminescence measurements show asubstantial improvement in crystal quality and good consistency and uniformity of the GaAs NW networks.Ourwork provides useful insights into the controlled growth of high-quality anti-phase domain-defects-free in-planeIII-V NWs and NW networks.展开更多
基金supported by the National Natural Science Foundation of China(Grant Nos.12374459,61974138,and 92065106)the Innovation Program for Quantum Science and Technology(Grant No.2021ZD0302400)+1 种基金the Strategic Priority Research Program of Chinese Academy of Sciences(Grant No.XDB0460000)the support from the Youth Innovation Promotion Association,Chinese Academy of Sciences(Grant Nos.2017156 and Y2021043)。
文摘Anti-phase domain defects easily form in the in-plane GaAs nanowires(NWs)grown on CMOS-compatiblegroup IV substrates,which makes it difficult to obtain GaAs NWs with a designed length and also leads to asignificant limitation in the growth of high-quality in-plane GaAs NW networks on such substrates.Here,wereport on the selective area growth of anti-phase domain-free in-plane GaAs NWs and NW networks on Ge(111)substrates.Detailed structural studies confirm that the GaAs NW grown using a large pattern period and GaAsNW networks grown by adding the Sb are both high-quality pure zinc-blende single crystals free of stackingfaults,twin defects,and anti-phase domain defects.Room-temperature photoluminescence measurements show asubstantial improvement in crystal quality and good consistency and uniformity of the GaAs NW networks.Ourwork provides useful insights into the controlled growth of high-quality anti-phase domain-defects-free in-planeIII-V NWs and NW networks.
