期刊文献+
共找到4篇文章
< 1 >
每页显示 20 50 100
First Principle Study on Optical Properties of Tri-Group Doped(6,6) SiC Nanotubes 被引量:1
1
作者 Pei GONG Ya-Lin LI +1 位作者 Ya-Hui JIA Xiao-Yong FANG 《Chinese Physics Letters》 SCIE CAS CSCD 2018年第11期80-82,共3页
The optical properties of tri-group(B, Al, Ga, In) doped(6,6) SiC nanotubes(SiCNTs) are studied from first principles. The results show that the main absorption and dispersion of SiCNTs caused by the intrinsic t... The optical properties of tri-group(B, Al, Ga, In) doped(6,6) SiC nanotubes(SiCNTs) are studied from first principles. The results show that the main absorption and dispersion of SiCNTs caused by the intrinsic transition appear in the ultraviolet-visible region(below 500 nm), and the tri-group doping increases the minimum dielectric constant value resulting in enhanced transmittance. In addition, the tri-group doping can introduce a weak absorption and dispersion region in the near-mid-infrared region, and the response peak blue shifts as the diameter of the doping atom increases. Comparative studies of reflectance, absorptivity, and transmittance show that the key factors affecting the transmittance of SiCNTs are reflectance(or refractive index) rather than absorption coefficient. 展开更多
关键词 Ga Al Ts first principle study on Optical Properties of Tri-Group Doped SiC Nanotubes
原文传递
A Calorimetric Study Assisted with First Principle Calculations of Specific Heat for Si-Ge Alloys within a Broad Temperature Range
2
作者 王庆 王海鹏 +2 位作者 耿德路 李明星 魏炳波 《Chinese Physics Letters》 SCIE CAS CSCD 2018年第12期37-40,共4页
Calorimetric measurements are performed to determine the specific heat of Si-xat.% Ge(where x = 0, 10, 30,50, 70, 90 and 100) alloys within a broad temperature range from 123 to 823 K. The measured specific heat incre... Calorimetric measurements are performed to determine the specific heat of Si-xat.% Ge(where x = 0, 10, 30,50, 70, 90 and 100) alloys within a broad temperature range from 123 to 823 K. The measured specific heat increases dramatically at low temperatures, and the composition dependence of specific heat is evaluated from the experimental results. Meanwhile, the specific heat at constant volume, the thermal expansion, and the bulk modulus of Si and Ge are investigated by the first principle calculations combined with the quasiharmonic approximation. The negative thermal expansion is observed for both Si and Ge. Furthermore, the isobaric specific heat of Si and Ge is calculated correspondingly from OK to their melting points, which is verified by the measured results and accounts for the temperature dependence in a still boarder range. 展开更多
关键词 Ge Si A Calorimetric study Assisted with first principle Calculations of Specific Heat for Si-Ge Alloys within a Broad Temperature Range
原文传递
Ballistic current induced effective force on magnetic domain wall
3
作者 C.Wang K.Xia 《Nano-Micro Letters》 SCIE EI CAS 2009年第1期34-39,共6页
The collective dynamics of magnetic domain wall under electric current is studied in the form of spin transfer torque(STT). The out-of-plane STT induced effective force is obtained based on the Landau-Lifshitz-Gilbert... The collective dynamics of magnetic domain wall under electric current is studied in the form of spin transfer torque(STT). The out-of-plane STT induced effective force is obtained based on the Landau-Lifshitz-Gilbert(LLG) equation including microscopic STT terms. The relation between microscopic calculations and collective description of the domain wall motion is established. With our numerical calculations based on tight binding free electron model, we find that the non adiabatic out-of-plane torque components have considerable non-local properties. It turns out that the calculated effective forces decay significantly with increasing domain wall widths. 展开更多
关键词 Magnetic domain Spin Transfer torque SPINTRONICS first principle study
在线阅读 下载PDF
Full band Monte Carlo simulation of AlInAsSb digital alloys
4
作者 Jiyuan Zheng Sheikh Z.Ahmed +7 位作者 Yuan Yuan Andrew Jones Yaohua Tan Ann K.Rockwell Stephen D.March Seth R.Bank Avik W.Ghosh Joe C.Campbell 《InfoMat》 SCIE CAS 2020年第6期1236-1240,共5页
Avalanche photodiodes fabricated from AlInAsSb grown as a digital alloy exhibit low excess noise.In this article,we investigate the band structurerelated mechanisms that influence impact ionization.Band-structures cal... Avalanche photodiodes fabricated from AlInAsSb grown as a digital alloy exhibit low excess noise.In this article,we investigate the band structurerelated mechanisms that influence impact ionization.Band-structures calculated using an empirical tight-binding method and Monte Carlo simulations reveal that the mini-gaps in the conduction band do not inhibit electron impact ionization.Good agreement between the full band Monte Carlo simulations and measured noise characteristics is demonstrated. 展开更多
关键词 AlInAsSb avalanche photodiode digital alloy first principle study
原文传递
上一页 1 下一页 到第
使用帮助 返回顶部