Recently,β-Ga_(2)O_(3),an ultra-wide bandgap semiconductor,has shown great potential to be used in power devices blessed with its unique material properties.For instance,the measured average critical field of the ver...Recently,β-Ga_(2)O_(3),an ultra-wide bandgap semiconductor,has shown great potential to be used in power devices blessed with its unique material properties.For instance,the measured average critical field of the vertical Schottky barrier diode(SBD)based onβ-Ga_(2)O_(3) has reached 5.45 MV/cm,and no device in any material has measured a greater before.However,the high electric field of theβ-Ga_(2)O_(3) SBD makes it challenging to manage the electric field distribution and leakage current.Here,we showβ-Ga_(2)O_(3) junction barrier Schottky diode with NiO p-well floating field rings(FFRs).For the central anode,we filled a circular trench array with NiO to reduce the surface field under the Schottky contact between them to reduce the leakage current of the device.For the anode edge,experimental results have demonstrated that the produced NiO/β-Ga_(2)O_(3) heterojunction FFRs enable the spreading of the depletion region,thereby mitigating the crowding effect of electric fields at the anode edge.Additionally,simulation results indicated that the p-NiO field plate structure designed at the edges of the rings and central anode can further reduce the electric field.This work verified the feasibility of the heterojunction FFRs inβ-Ga_(2)O_(3) devices based on the experimental findings and provided ideas for managing the electric field ofβ-Ga_(2)O_(3) SBD.展开更多
A vertical sandwich deep trench with a field limiting ring is proposed to improve the breakdown voltage of power devices and high voltage devices.Simulation result shows that nearly 100% breakdown voltage of the plane...A vertical sandwich deep trench with a field limiting ring is proposed to improve the breakdown voltage of power devices and high voltage devices.Simulation result shows that nearly 100% breakdown voltage of the plane junction can be realized.展开更多
WT8.BZ]A new quasi 2-dimensional analytical approach to predicting the ring voltage,edge peak fields and optimal spacing of the planar junction with a single floating field limiting ring structure has been proposed,ba...WT8.BZ]A new quasi 2-dimensional analytical approach to predicting the ring voltage,edge peak fields and optimal spacing of the planar junction with a single floating field limiting ring structure has been proposed,based on the cylindrical symmetric solution and the critical field concept.The effects of the spacing and reverse voltage on the ring junction voltage and edge peak field profiles have been analyzed.The optimal spacing and the maximum breakdown voltage of the structure have also been obtained.The analytical results are in excellent agreement with that obtained from the 2-D device simulator,MEDICI and the reported result,which proves the presented model valid.展开更多
A novel thin drift region device with heavily doped N＋ rings embedded in the substrate is reported, which is called the field limiting rings in substrate lateral double-diffused MOS transistor （SFLR LDMOS）. In the ...A novel thin drift region device with heavily doped N＋ rings embedded in the substrate is reported, which is called the field limiting rings in substrate lateral double-diffused MOS transistor （SFLR LDMOS）. In the SFLR LDMOS, the peak of the electric field at the main junction is reduced due to the transfer of the voltage from the main junction to other field limiting ring junctions, so the vertical electric field is improved significantly. A model of the breakdown voltage is developed, from which optimal spacing is obtained. The numerical results indicate that the breakdown voltage of the device proposed is increased by 76% in comparison to that of the conventional LDMOS.展开更多
This paper describes the successful fabrication of 4H-SiC junction barrier Schottky （JBS） rectifiers with a linearly graded field limiting ring （LG-FLR）. Linearly variable ring spacings for the FLR termination are...This paper describes the successful fabrication of 4H-SiC junction barrier Schottky （JBS） rectifiers with a linearly graded field limiting ring （LG-FLR）. Linearly variable ring spacings for the FLR termination are applied to improve the blocking voltage by reducing the peak surface electric field at the edge termination region, which acts like a variable lateral doping profile resulting in a gradual field distribution. The experimental results demonstrate a breakdown voltage of 5 kV at the reverse leakage current density of 2 mA/cm2 （about 80% of the theoretical value）. Detailed numerical simulations show that the proposed termination structure provides a uniform electric field profile compared to the conventional FLR termi- nation, which is responsible for 45% improvement in the reverse blocking voltage despite a 3.7% longer total termination length.展开更多
The effect of magnetic field on the tribological process of sleeve-ring pair lubricated by WRL lubricants was investigated by means of a NG-x wear tester and a PS5013 video microscope. The friction coefficient(f) and ...The effect of magnetic field on the tribological process of sleeve-ring pair lubricated by WRL lubricants was investigated by means of a NG-x wear tester and a PS5013 video microscope. The friction coefficient(f) and the wear weight(W) in lubricating test with WRL lubricant were decreased with the increase in the magnetic field vertical to the rubbing surface, and an almost zero wear lubricating situation was gained in a magnetic field of 1000A/m. The captured wear micro particles on the rubbing surface were observed in the testing process, and the theoretical analysis of magnetic effects was completed. It is indicated that the magnetic field has not only a capturing action of wear micro particles on the worn surface, but also a inducing polarization of magnetic anisotropy of lubricant molecular. The actions promote the absorption of WRL lubricant into the wear surface as well as wear micro-particles, so that a good tribological effect is obtained when both magnetic field and WRL present.展开更多
The optical absorption of GaAs nanorings （NRs） under adc electric field and a terahertz （THz） ac electric field applied in the plane containing the NRs is investigated theoretically. The NRs may enclose some magne...The optical absorption of GaAs nanorings （NRs） under adc electric field and a terahertz （THz） ac electric field applied in the plane containing the NRs is investigated theoretically. The NRs may enclose some magnetic flux in the presence of a magnetic field perpendicular to the NRs plane. Numerical calculation shows that the excitonic effects are essential to correctly describe the optical absorption in NRs. The applied lateral THz electric field, as well as the dc field leads to reduction, broadening and splitting of the exciton peak. In contrast to the presence of a dc field, significant optical absorption peak arises below the zero-field bandgap in the presence ofa THz electric field at a certain frequency. The optical absorption spectrum depends evidently on the frequency and amplitude of the applied THz field and on the magnetic flux threading the NRs. This promises potential applications of NRs for magneto-optical and THz electro-optical sensing.展开更多
The effect of an electric field E on a narrow quantum ring that contains two electrons and is threaded by a magnetic flux B has been investigated. Localization of the electronic distribution and suppression of the Aha...The effect of an electric field E on a narrow quantum ring that contains two electrons and is threaded by a magnetic flux B has been investigated. Localization of the electronic distribution and suppression of the AharonovBohm oscillation （ABO） are found in the two-electron ring, which are similar to those found in a one-electron ring. However, the period of ABO in a two-electron ring is reduced by half compared with that in a one-electron ring. Furthermore, during the variation of B, the persistent current of the ground state may undergo a sudden change in sign. This change is associated with a singlet-triplet transition and has no counterpart in one-electron rings. For a given E, there exists a threshold of energy. When the energy of the excited state exceeds the threshold, the localization would disappear and the ABO would recover. The value of the threshold is proportional to the magnitude of E. Once the threshold is exceeded, the persistent current is much stronger than the current of the ground state at E=0.展开更多
The electron states in a two-dimensional GaAs/AlGaAs quantum ring are theoretically studied in effective mass approximation. On-centre donor impurity and uniform magnetic field perpendicular to the ring plane are take...The electron states in a two-dimensional GaAs/AlGaAs quantum ring are theoretically studied in effective mass approximation. On-centre donor impurity and uniform magnetic field perpendicular to the ring plane are taken into account. The energy spectrum with different angular momentum changes dramatically with the geometry of the ring. The donor impurity reduces the energies with an almost fixed value; however, the magnetic field alters energies in a more complex way. For example, energy levels under magnetic field will cross each other when increasing the inner radius and outer radius of the ring, leading to the fact that the arrangement of energy levels is distinct in certain geometry of the ring. Moreover, energy levels with negative angular momentum exhibit the non-monotonous dependence on the increasing magnetic field.展开更多
The ring-banded spherulite is a special morphology of polymer crystals and has attracted considerable attention over recent decades. In this study, a new phase field model with polymer characteristics is established t...The ring-banded spherulite is a special morphology of polymer crystals and has attracted considerable attention over recent decades. In this study, a new phase field model with polymer characteristics is established to investigate the emergence and formation mechanism of the ring-banded spherulites of crystalline polymers. The model consists of a nonconserved phase field representing the phase transition and a temperature field describing the diffusion of the released latent heat. The corresponding model parameters can be obtained from experimentally accessible material parameters.Two-dimensional calculations are carried out for the ring-banded spherulitic growth of polyethylene film under a series of crystallization temperatures. The results of these calculations demonstrate that the formation of ring-banded spherulites can be triggered by the self-generated thermal field. Moreover, some temperature-dependent characteristics of the ring-banded spherulites observed in experiments are reproduced by simulations, which may help to study the effects of crystallization temperature on the ring-banded structures.展开更多
The Substorm Current Wedge （SCW） occurrence in the late growth and onset phases of substorms was proposed as the current system which disrupts cross-tail current by diverting it to the ionosphere. The closure curren...The Substorm Current Wedge （SCW） occurrence in the late growth and onset phases of substorms was proposed as the current system which disrupts cross-tail current by diverting it to the ionosphere. The closure current for the SCW originally was suggested to be the strong westward auroral electrojet （WEJ）. However, the SCW-WEJ system has no viable generator current. Similarly, the asymmetric or Partial Ring Current （PRC） increases in strength during the growth phase, and is sometimes associated with an enhanced Region 2 field-aligned current （FAC） closing to the ionosphere, but specifics of that closure have been lacking. Here we present a tmifying picture which includes the SCW post- and pre-midnight （AM and PM, respectively） currents and a generator current in the midnight portion of the PRC system, with these currents based upon a model of the nightside magnetotail magnetic geometry. That geometry consists of open north and south lobe regions surrounding a plasmasheet with two types of closed field line regions-stretched lines in the central part of the plasmasheet （SPS） and dipolar lines （DPS） between the low lati- tude boundary layer （LLBL） regions and the SPS. There is also an important plasmasheet transition region （TPS） in which the dipolar field near the plasmapause gradually transforms to stretched lines near the earthward edge of the SPS, and in which the midnight part of the PRC flows. We propose that our proposed near-onset current system consists of a central current which be- comes part of the midnight sector PRC and which is the generator, to which are linked two three-part current systems, one on the dawnside and one on the duskside. The three-part systems consist of up and down FACs closing as Pedersen currents in the iono- sphere. These 3-part systems are not activated until near-onset is reached, because of a lack of ionospheric conductivity in the appropriate locations where the Pedersen current closure occurs. The initial downward FAC of the 3-part dawnside system and the final upward FAC of the 3-part duskside system correspond to the AM and PM current segments, respectively, of the originally proposed SCW.展开更多
基金Project supported by the National Natural Science Foundation of China (Grant Nos.61925110,U20A20207,62004184,62004186,and 62234007)the Key-Area Research and Development Program of Guangdong Province (Grant No.2020B010174002)+3 种基金the funding support from University of Science and Technology of China (USTC) (Grant Nos.YD2100002009 and YD2100002010)the Fundamental Research Plan (Grant No.JCKY2020110B010)Collaborative Innovation Program of Hefei Science Center,Chinese Academy of Sciences (Grant No.2022HSC-CIP024)the Opening Project of and the Key Laboratory of Nanodevices and Applications in Suzhou Institute of Nano-Tech and Nano-Bionics of CAS。
文摘Recently,β-Ga_(2)O_(3),an ultra-wide bandgap semiconductor,has shown great potential to be used in power devices blessed with its unique material properties.For instance,the measured average critical field of the vertical Schottky barrier diode(SBD)based onβ-Ga_(2)O_(3) has reached 5.45 MV/cm,and no device in any material has measured a greater before.However,the high electric field of theβ-Ga_(2)O_(3) SBD makes it challenging to manage the electric field distribution and leakage current.Here,we showβ-Ga_(2)O_(3) junction barrier Schottky diode with NiO p-well floating field rings(FFRs).For the central anode,we filled a circular trench array with NiO to reduce the surface field under the Schottky contact between them to reduce the leakage current of the device.For the anode edge,experimental results have demonstrated that the produced NiO/β-Ga_(2)O_(3) heterojunction FFRs enable the spreading of the depletion region,thereby mitigating the crowding effect of electric fields at the anode edge.Additionally,simulation results indicated that the p-NiO field plate structure designed at the edges of the rings and central anode can further reduce the electric field.This work verified the feasibility of the heterojunction FFRs inβ-Ga_(2)O_(3) devices based on the experimental findings and provided ideas for managing the electric field ofβ-Ga_(2)O_(3) SBD.
文摘A vertical sandwich deep trench with a field limiting ring is proposed to improve the breakdown voltage of power devices and high voltage devices.Simulation result shows that nearly 100% breakdown voltage of the plane junction can be realized.
文摘WT8.BZ]A new quasi 2-dimensional analytical approach to predicting the ring voltage,edge peak fields and optimal spacing of the planar junction with a single floating field limiting ring structure has been proposed,based on the cylindrical symmetric solution and the critical field concept.The effects of the spacing and reverse voltage on the ring junction voltage and edge peak field profiles have been analyzed.The optimal spacing and the maximum breakdown voltage of the structure have also been obtained.The analytical results are in excellent agreement with that obtained from the 2-D device simulator,MEDICI and the reported result,which proves the presented model valid.
基金supported by the Guangxi Provincial Natural Science Foundation,China(Grant No.2010GXNSFB013054)the Guangxi Provincial Key Science and Technology Program,China(Grant No.11107001-20)
文摘A novel thin drift region device with heavily doped N＋ rings embedded in the substrate is reported, which is called the field limiting rings in substrate lateral double-diffused MOS transistor （SFLR LDMOS）. In the SFLR LDMOS, the peak of the electric field at the main junction is reduced due to the transfer of the voltage from the main junction to other field limiting ring junctions, so the vertical electric field is improved significantly. A model of the breakdown voltage is developed, from which optimal spacing is obtained. The numerical results indicate that the breakdown voltage of the device proposed is increased by 76% in comparison to that of the conventional LDMOS.
基金Project supported by the State Key Program of the National Natural Science Foundation of China(Grant No.61234006)
文摘This paper describes the successful fabrication of 4H-SiC junction barrier Schottky （JBS） rectifiers with a linearly graded field limiting ring （LG-FLR）. Linearly variable ring spacings for the FLR termination are applied to improve the blocking voltage by reducing the peak surface electric field at the edge termination region, which acts like a variable lateral doping profile resulting in a gradual field distribution. The experimental results demonstrate a breakdown voltage of 5 kV at the reverse leakage current density of 2 mA/cm2 （about 80% of the theoretical value）. Detailed numerical simulations show that the proposed termination structure provides a uniform electric field profile compared to the conventional FLR termi- nation, which is responsible for 45% improvement in the reverse blocking voltage despite a 3.7% longer total termination length.
文摘The effect of magnetic field on the tribological process of sleeve-ring pair lubricated by WRL lubricants was investigated by means of a NG-x wear tester and a PS5013 video microscope. The friction coefficient(f) and the wear weight(W) in lubricating test with WRL lubricant were decreased with the increase in the magnetic field vertical to the rubbing surface, and an almost zero wear lubricating situation was gained in a magnetic field of 1000A/m. The captured wear micro particles on the rubbing surface were observed in the testing process, and the theoretical analysis of magnetic effects was completed. It is indicated that the magnetic field has not only a capturing action of wear micro particles on the worn surface, but also a inducing polarization of magnetic anisotropy of lubricant molecular. The actions promote the absorption of WRL lubricant into the wear surface as well as wear micro-particles, so that a good tribological effect is obtained when both magnetic field and WRL present.
基金Supported by the National Natural Science Foundation of China under Grant Nos 10390161 and 30370420.
文摘The optical absorption of GaAs nanorings （NRs） under adc electric field and a terahertz （THz） ac electric field applied in the plane containing the NRs is investigated theoretically. The NRs may enclose some magnetic flux in the presence of a magnetic field perpendicular to the NRs plane. Numerical calculation shows that the excitonic effects are essential to correctly describe the optical absorption in NRs. The applied lateral THz electric field, as well as the dc field leads to reduction, broadening and splitting of the exciton peak. In contrast to the presence of a dc field, significant optical absorption peak arises below the zero-field bandgap in the presence ofa THz electric field at a certain frequency. The optical absorption spectrum depends evidently on the frequency and amplitude of the applied THz field and on the magnetic flux threading the NRs. This promises potential applications of NRs for magneto-optical and THz electro-optical sensing.
基金Project supported by the National Natural Science Foundation of China （Grant No 10574163）, the Center of Theoretical Nuclear Physics, National Laboratory of Heavy Ion Collisions, Lanzhou, China.
文摘The effect of an electric field E on a narrow quantum ring that contains two electrons and is threaded by a magnetic flux B has been investigated. Localization of the electronic distribution and suppression of the AharonovBohm oscillation （ABO） are found in the two-electron ring, which are similar to those found in a one-electron ring. However, the period of ABO in a two-electron ring is reduced by half compared with that in a one-electron ring. Furthermore, during the variation of B, the persistent current of the ground state may undergo a sudden change in sign. This change is associated with a singlet-triplet transition and has no counterpart in one-electron rings. For a given E, there exists a threshold of energy. When the energy of the excited state exceeds the threshold, the localization would disappear and the ABO would recover. The value of the threshold is proportional to the magnitude of E. Once the threshold is exceeded, the persistent current is much stronger than the current of the ground state at E=0.
基金Project supported by the National High Technology Research and Development Program of China (Grant No. 2009AA03Z405)the National Natural Science Foundation of China (Grant Nos. 60908028 and 60971068)the Fundamental Research Funds for the Central Universities (Grant No. BUPT2009RC0411)
文摘The electron states in a two-dimensional GaAs/AlGaAs quantum ring are theoretically studied in effective mass approximation. On-centre donor impurity and uniform magnetic field perpendicular to the ring plane are taken into account. The energy spectrum with different angular momentum changes dramatically with the geometry of the ring. The donor impurity reduces the energies with an almost fixed value; however, the magnetic field alters energies in a more complex way. For example, energy levels under magnetic field will cross each other when increasing the inner radius and outer radius of the ring, leading to the fact that the arrangement of energy levels is distinct in certain geometry of the ring. Moreover, energy levels with negative angular momentum exhibit the non-monotonous dependence on the increasing magnetic field.
基金Project supported by the National Key Basic Research Program of China(Grant No.2012CB025903)the National Natural Science Foundation of China(Grant No.11402210)+1 种基金the Northwestern Polytechnical University Foundation for Fundamental Research(Grant No.JCY20130141)the Ministry of Education Fund for Doctoral Students Newcomer Awards of China
文摘The ring-banded spherulite is a special morphology of polymer crystals and has attracted considerable attention over recent decades. In this study, a new phase field model with polymer characteristics is established to investigate the emergence and formation mechanism of the ring-banded spherulites of crystalline polymers. The model consists of a nonconserved phase field representing the phase transition and a temperature field describing the diffusion of the released latent heat. The corresponding model parameters can be obtained from experimentally accessible material parameters.Two-dimensional calculations are carried out for the ring-banded spherulitic growth of polyethylene film under a series of crystallization temperatures. The results of these calculations demonstrate that the formation of ring-banded spherulites can be triggered by the self-generated thermal field. Moreover, some temperature-dependent characteristics of the ring-banded spherulites observed in experiments are reproduced by simulations, which may help to study the effects of crystallization temperature on the ring-banded structures.
文摘The Substorm Current Wedge （SCW） occurrence in the late growth and onset phases of substorms was proposed as the current system which disrupts cross-tail current by diverting it to the ionosphere. The closure current for the SCW originally was suggested to be the strong westward auroral electrojet （WEJ）. However, the SCW-WEJ system has no viable generator current. Similarly, the asymmetric or Partial Ring Current （PRC） increases in strength during the growth phase, and is sometimes associated with an enhanced Region 2 field-aligned current （FAC） closing to the ionosphere, but specifics of that closure have been lacking. Here we present a tmifying picture which includes the SCW post- and pre-midnight （AM and PM, respectively） currents and a generator current in the midnight portion of the PRC system, with these currents based upon a model of the nightside magnetotail magnetic geometry. That geometry consists of open north and south lobe regions surrounding a plasmasheet with two types of closed field line regions-stretched lines in the central part of the plasmasheet （SPS） and dipolar lines （DPS） between the low lati- tude boundary layer （LLBL） regions and the SPS. There is also an important plasmasheet transition region （TPS） in which the dipolar field near the plasmapause gradually transforms to stretched lines near the earthward edge of the SPS, and in which the midnight part of the PRC flows. We propose that our proposed near-onset current system consists of a central current which be- comes part of the midnight sector PRC and which is the generator, to which are linked two three-part current systems, one on the dawnside and one on the duskside. The three-part systems consist of up and down FACs closing as Pedersen currents in the iono- sphere. These 3-part systems are not activated until near-onset is reached, because of a lack of ionospheric conductivity in the appropriate locations where the Pedersen current closure occurs. The initial downward FAC of the 3-part dawnside system and the final upward FAC of the 3-part duskside system correspond to the AM and PM current segments, respectively, of the originally proposed SCW.
