Solvated zinc ions are prone to undergo desolvation at the electrode/electrolyte interfaces,and unstable H_(2)O molecules within the solvated sheaths tend to trigger hydrogen evolution reaction(HER),further accelerati...Solvated zinc ions are prone to undergo desolvation at the electrode/electrolyte interfaces,and unstable H_(2)O molecules within the solvated sheaths tend to trigger hydrogen evolution reaction(HER),further accelerating interfaces decay.Herein,we propose for the first time a novel strategy to enhance the interfacial stabilities by insitu dynamic reconstruction of weakly solvated Zn2þduring the desolvation processes at heterointerfaces.Theoretical calculations indicate that,due to built-in electric field effects(BEFs),the plating/stripping mechanism shifts from[Zn(H_(2)O)_(6)]_(2)þto[Zn(H_(2)O)_(5)(SO_(4))^(2-)]_(2)þwithout additional electrolyte additives,reducing the solvation ability of H_(2)O,enhancing the competitive coordination of SO_(4)^(2-),essentially eliminating the undesirable side effects of anodes.Hence,symmetric cells can operate stably for 3000 h(51.7-times increase in cycle life),and the full cells can operate stably for 5000 cycles(51.5-times increase in cycle life).This study provides valuable insights into the critical design of weakly solvated Zn^(2+) þand desolvation processes at heterointerfaces.展开更多
A sensor,serving as a transducer,produces a quantifiable output in response to a predetermined input stimulus,which may be of a chemical or physical nature.The field of gas detection has experienced a substantial surg...A sensor,serving as a transducer,produces a quantifiable output in response to a predetermined input stimulus,which may be of a chemical or physical nature.The field of gas detection has experienced a substantial surge in research activity,attributable to the diverse functionalities and enhanced accessibility of advanced active materials.In this work,recent advances in gas sensors,specifically those utilizing Field Effect Transistors(FETs),are summarized,including device configurations,response characteristics,sensor materials,and application domains.In pursuing high-performance artificial olfactory systems,the evolution of FET gas sensors necessitates their synchronization with material advancements.These materials should have large surface areas to enhance gas adsorption,efficient conversion of gas input to detectable signals,and strong mechanical qualities.The exploration of gas-sensitive materials has covered diverse categories,such as organic semiconductor polymers,conductive organic compounds and polymers,metal oxides,metal-organic frameworks,and low-dimensional materials.The application of gas sensing technology holds significant promise in domains such as industrial safety,environmental monitoring,and medical diagnostics.This comprehensive review thoroughly examines recent progress,identifies prevailing technical challenges,and outlines prospects for gas detection technology utilizing field effect transistors.The primary aim is to provide a valuable reference for driving the development of the next generation of gas-sensitive monitoring and detection systems characterized by improved sensitivity,selectivity,and intelligence.展开更多
The development of various artificial electronics and machines would explosively increase the amount of information and data,which need to be processed via in-situ remediation.Bioinspired synapse devices can store and...The development of various artificial electronics and machines would explosively increase the amount of information and data,which need to be processed via in-situ remediation.Bioinspired synapse devices can store and process signals in a parallel way,thus improving fault tolerance and decreasing the power consumption of artificial systems.The organic field effect transistor(OFET)is a promising component for bioinspired neuromorphic systems because it is suitable for large-scale integrated circuits and flexible devices.In this review,the organic semiconductor materials,structures and fabrication,and different artificial sensory perception systems functions based on neuromorphic OFET devices are summarized.Subsequently,a summary and challenges of neuromorphic OFET devices are provided.This review presents a detailed introduction to the recent progress of neuromorphic OFET devices from semiconductor materials to perception systems,which would serve as a reference for the development of neuromorphic systems in future bioinspired electronics.展开更多
High alumina slag will cause severe corrosion at the interface of alumina refractory,and the wetting behavior of slag is a key factor influencing the corrosion resistance of refractory ceramics.The static magnetic fie...High alumina slag will cause severe corrosion at the interface of alumina refractory,and the wetting behavior of slag is a key factor influencing the corrosion resistance of refractory ceramics.The static magnetic field is a promising solution for improvement in the slag resistance of refractory.The wetting of alumina refractory ceramics with different basicities of high alumina slags under a weak static magnetic field was analyzed,given that a weak static magnetic field can affect the corrosion behavior of refractory ceramics.Taking slag S_(3) as an example,when there was an external static magnetic field of 1.0 mT at 1600 ℃,the thickness of calcium aluminate reaction layer at the interface decreased by 36.7%,the denting depth of interface decreased by 35.6%,and the apparent wetting angle increased by 20%.The living radicals and their formation path in oxide melts were verified by first-principles calculation combined with electron paramagnetic resonance spectroscopy analysis.The influence of the flux density of a weak static magnetic field on the wetting behavior of slags was also explored.The contact angle of the slags increased owing to the inhibitory effect of magnetic field on the radicalinvolved reaction at the interface of the slag and the alumina refractory ceramic.The relationships between the magnetic flux density,diffusion coefficient,slag microstructure(hyperfine coupling constant),and contact angle were established.This provides a theoretical basis for the field control of radical involved reactive wetting between inorganic oxide slags and solid oxide ceramics.展开更多
Dzyaloshinskii–Moriya interaction(DMI) is under extensive investigation considering its crucial status in chiral magnetic orders, such as Néel-type domain wall(DW) and skyrmions. It has been reported that the in...Dzyaloshinskii–Moriya interaction(DMI) is under extensive investigation considering its crucial status in chiral magnetic orders, such as Néel-type domain wall(DW) and skyrmions. It has been reported that the interfacial DMI originating from Rashba spin–orbit coupling(SOC) can be linearly tuned with strong external electric fields. In this work, we experimentally demonstrate that the strength of DMI exhibits rapid fluctuations, ranging from 10% to 30% of its original value, as a function of applied electric fields in Pt/Co/MgO heterostructures within the small field regime(< 10-2V/nm). Brillouin light scattering(BLS) experiments have been performed to measure DMI, and first-principles calculations show agreement with this observation, which can be explained by the variation in orbital hybridization at the Co/MgO interface in response to the weak electric fields. Our results on voltage control of DMI(VCDMI) suggest that research related to the voltage control of magnetic anisotropy for spin–orbit torque or the motion control of skyrmions might also have to consider the role of the external electric field on DMI as small voltages are generally used for the magnetoresistance detection.展开更多
ZnO nanosheets with thickness of a few nanometers are prepared by vapor transport and condensation method, and their structure and optical properties are well characterized. Field effect transistor （FET） and ultravi...ZnO nanosheets with thickness of a few nanometers are prepared by vapor transport and condensation method, and their structure and optical properties are well characterized. Field effect transistor （FET） and ultraviolet （UV） sensors are fabricated based on the ZnO nanosheets. Due to the peculiar structure of nanosheet, the FET shows n-type enhanced mode behavior and high electrical performance, and its field-effect mobility and on/off cur- rent ratio can reach 256 cm2/（V.s） and ~10^8, respectively. Moreover, the response of UV sensors can also be remarkably improved to ~3 × 10^8. The results make the ZnO nanosheets be a good material for the applications in nanoelectronic and optoelectronic devices.展开更多
In order to address challenges posed by the reduction in transistor size,researchers are concentrating on two-dimensional(2D)materials with high dielectric constants and large band gaps.Monoclinic ZrO_(2)(m-ZrO_(2))ha...In order to address challenges posed by the reduction in transistor size,researchers are concentrating on two-dimensional(2D)materials with high dielectric constants and large band gaps.Monoclinic ZrO_(2)(m-ZrO_(2))has emerged as a promising gate dielectric material due to its suitable dielectric constant,wide band gap,ideal valence-band offset,and good thermodynamic stability.However,current deposition methods face compatibility issues with 2D semiconductors,highlighting the need for high-quality dielectrics and interfaces.Here,high-quality 2D m-ZrO_(2)single crystals are successfully prepared using a onestep chemical vapor deposition(CVD)method,aided by 5A molecular sieves for oxygen supply.The prepared ZrO_(2)is utilized as a gate dielectric in the construction of MoS2 field-effect transistors(FETs)to investigate its electrical property.The FETs exhibit a high carrier mobility of up to 5.50 cm^(2)·V^(−1)·s^(−1),and a current switching ratio(Ion/off)of approximately 10^(4),which aligns with the current standards of logic circuits,indicating that ZrO_(2)has application value as a gate dielectric.The successful onestep preparation of single-crystal ZrO_(2)paves the way for the utilization of high-κgate dielectrics and creates favorable conditions for the development of high-performance semiconductor devices,offering new possibilities for transistor miniaturization.展开更多
Electrochemical carbon dioxide reduction reaction(CO_(2)RR)converts CO_(2) into valuable chemicals by consuming renewable electricity at mild conditions,making it a promising approach to achieving carbon neutrality.Ho...Electrochemical carbon dioxide reduction reaction(CO_(2)RR)converts CO_(2) into valuable chemicals by consuming renewable electricity at mild conditions,making it a promising approach to achieving carbon neutrality.However,the reaction of CO_(2) with hydroxide ions to form carbonates leads to low carbon utilization and energy efficiency in near-neutral or alkaline CO_(2)RR.The high concentration of protons in acidic media can effectively mitigate carbonate formation and deposition,thereby significantly minimizing carbon loss and energy consumption.Unfortunately,hydrogen evolution reaction(HER)is more kinetically favorable than CO_(2)RR in acidic media.Herein,we comprehensively overview recent progress in acidic CO_(2)RR and propose two strategies derived from the competing reaction pathways of HER and CO_(2)RR:one focuses on regulating the H+mass transport,while the other aims to modulate the intrinsic kinetic activity of CO_(2)RR.The two strategies are designed to compete for the limited active sites on the catalyst surface,inhibit side reactions,and enhance the activity and selectivity of CO_(2)RR.The representative approaches include modulating the interface electric field,constructing a local alkaline environment,and regulating competing adsorption sites.Finally,we also review the technical challenges and future perspectives of acidic CO_(2)RR coupled with membrane electrode assemblies(MEAs).展开更多
Poly(vinylidene-trifluoroethylene) [P(VDF-TrFE)] copolymer films generally demonstrate limited compatibility with organic semiconductors. The material is frequently compromised by exposure to organic semiconductor sol...Poly(vinylidene-trifluoroethylene) [P(VDF-TrFE)] copolymer films generally demonstrate limited compatibility with organic semiconductors. The material is frequently compromised by exposure to organic semiconductor solutions and other fabrication processes utilized in the production of organic ferroelectric transistors. In this study, an organic ferroelectric field effect transistor(OFeFET) with the 6,13-Bis(triisopropylsilylethynyl) pentacene(TIPS-pentacene) channel is fabricated, in which the aluminum oxide(Al_(2)O_(3)) interlayer is used to improve compatibility. The device displays polymorphic memory and synaptic plasticity of long-term potentiation and depression. Furthermore, an artificial neural network constructed using our devices is simulated to succeed in recognizing the MNIST handwritten digit database with a high accuracy of 92.8%. This research offers a viable approach to enhance the compatibility of the organic ferroelectric polymer P(VDF-TrFE) with organic semiconductors.展开更多
In recent years,carbon nanotube field effect transistor(CNTFET)has become an attractive alternative to silicon for designing high-performance,highly stable,and low-power static random access memory(SRAM).SRAM serves a...In recent years,carbon nanotube field effect transistor(CNTFET)has become an attractive alternative to silicon for designing high-performance,highly stable,and low-power static random access memory(SRAM).SRAM serves as a cache memory in computers and many portable devices.Carbon nanotubes(CNTs),because of their exceptional transport capabilities,outstanding thermal conductivities,and impressive current handling capacities,have demonstrated great potential as an alternative device to the standard complementary metal-oxide-semiconductor(CMOS).The SRAM cell design using CNTFET is being compared to SRAM cell designs built using traditional CMOS technology.This paper presents the comprehensive analysis of CMOS&CNTFET based 8T SRAM cell design.Because of the nanoscale size,ballistic transport,and higher carrier mobility of the semiconducting nanotubes in CNTFET,it is integrated into the 8T SRAM cell.The approach incorporates several nonidealities,including the presence of quantum confinement consequences in the peripheral and transverse prescriptions,acoustic and transparent photon diffraction in the region surrounding the channel,as well as the screening effects by parallel CNTs in CNTFETs with multiple CNTs.By incorporating Stanford University CNTFET model in CADENCE(virtuoso)32 nm simulation,we have found that CNTFET SRAM cell is 4 times faster in terms of write/read delay and the write/read power delay product(PDP)value is almost 5 times lower compared to CMOS based SRAM.We have also analyzed the effect of temperature&different tube positions of CNTs on the performance evaluation of the 8T SRAM cell.展开更多
As a typical in-memory computing hardware design, nonvolatile ternary content-addressable memories(TCAMs) enable the logic operation and data storage for high throughout in parallel big data processing. However,TCAM c...As a typical in-memory computing hardware design, nonvolatile ternary content-addressable memories(TCAMs) enable the logic operation and data storage for high throughout in parallel big data processing. However,TCAM cells based on conventional silicon-based devices suffer from structural complexity and large footprintlimitations. Here, we demonstrate an ultrafast nonvolatile TCAM cell based on the MoTe2/hBN/multilayergraphene (MLG) van der Waals heterostructure using a top-gated partial floating-gate field-effect transistor(PFGFET) architecture. Based on its ambipolar transport properties, the carrier type in the source/drain andcentral channel regions of the MoTe2 channel can be efficiently tuned by the control gate and top gate, respectively,enabling the reconfigurable operation of the device in either memory or FET mode. When working inthe memory mode, it achieves an ultrafast 60 ns programming/erase speed with a current on-off ratio of ∼105,excellent retention capability, and robust endurance. When serving as a reconfigurable transistor, unipolar p-typeand n-type FETs are obtained by adopting ultrafast 60 ns control-gate voltage pulses with different polarities.The monolithic integration of memory and logic within a single device enables the content-addressable memory(CAM) functionality. Finally, by integrating two PFGFETs in parallel, a TCAM cell with a high current ratioof ∼10^(5) between the match and mismatch states is achieved without requiring additional peripheral circuitry.These results provide a promising route for the design of high-performance TCAM devices for future in-memorycomputing applications.展开更多
The future space-borne gravitational wave(GW)detectors would provide a promising probe for the new physics beyond the standard model that admits the first-order phase transitions.The predictions for the GW background ...The future space-borne gravitational wave(GW)detectors would provide a promising probe for the new physics beyond the standard model that admits the first-order phase transitions.The predictions for the GW background vary sensitively among different concrete particle physics models but also share a large degeneracy in the model buildings,which motivates an effective model description on the phase transition based on different patterns of the electroweak symmetry breaking(EWSB).In this paper,using the scalar N-plet model as a demonstration,we propose an effective classification for three different patterns of EWSB:(1)radiative symmetry breaking with classical scale invariance,(2)the Higgs mechanism in a generic scalar extension,and(3)higher-dimensional operators.We conclude that a strong first-order phase transition could be realized for(1)and(2)with a small quartic coupling and a small isospin of an additional N-plet field for the light scalar field model with and without the classical scale invariance,and(3)with a large mixing coupling between scalar fields and a large isospin of the N-plet field for the heavy scalar field model.展开更多
For understanding the hierarchies of fermion masses and mixing,we extend the Standard Model(SM)gauge group with U(1)_(X) and Z_(2) symmetry.The field content of the SM is augmented by three heavy right-handed neutrino...For understanding the hierarchies of fermion masses and mixing,we extend the Standard Model(SM)gauge group with U(1)_(X) and Z_(2) symmetry.The field content of the SM is augmented by three heavy right-handed neutrinos,two new scalar singlets,and a scalar doublet.U(1)_(X) charges of different fields are determined after satisfying anomaly cancellation conditions.In this scenario,the fermion masses are generated through higher-dimensional effective operators with O(1)Yukawa couplings.The small neutrino masses are obtained through type-1 seesaw mechanism using the heavy right-handed neutrino fields,whose masses are generated by the new scalar fields.We discuss the flavour-changing neutral current processes that arise due to the sequential nature of U(1)_(X) symmetry.We have written effective higher-dimensional operators in terms of renormalizable dimension-four operators by introducing vector-like fermions.展开更多
As a promising ultra-wide bandgap semiconductor, gallium oxide(Ga_2O_3) has attracted increasing attention in recent years. The high theoretical breakdown electrical field(8 MV/cm), ultra-wide bandgap(～ 4.8 eV) and l...As a promising ultra-wide bandgap semiconductor, gallium oxide(Ga_2O_3) has attracted increasing attention in recent years. The high theoretical breakdown electrical field(8 MV/cm), ultra-wide bandgap(～ 4.8 eV) and large Baliga's figure of merit(BFOM) of Ga_2O_3 make it a potential candidate material for next generation high-power electronics, including diode and field effect transistor(FET). In this paper, we introduce the basic physical properties of Ga_2O_3 single crystal, and review the recent research process of Ga_2O_3 based field effect transistors. Furthermore, various structures of FETs have been summarized and compared, and the potential of Ga_2O_3 is preliminary revealed. Finally, the prospect of the Ga_2O_3 based FET for power electronics application is analyzed.展开更多
The effect of the applied electric field on the conductive behavior of zirconia ceramics is studied by measuring its initial current-voltage curve at various temperatures. The results show that when the field strength...The effect of the applied electric field on the conductive behavior of zirconia ceramics is studied by measuring its initial current-voltage curve at various temperatures. The results show that when the field strength is higher than the threshold for flash-sintering, the curves exhibit a nonlinear behavior by having an additional current on top of the linear current according to Ohm＇s law. Analyzing its transport behavior reveals that the additional current density is due to the extra oxygen vacancies induced by the electric field. The formation rate of the extra vacancies and associated current was related to the field strength.展开更多
Based on the closed-orbit theory, the magnetic field effect in the photodetachment of negative ion in the electric field near a metal surface is studied for the first time. The results show that the magnetic field can...Based on the closed-orbit theory, the magnetic field effect in the photodetachment of negative ion in the electric field near a metal surface is studied for the first time. The results show that the magnetic field can produce a significant effect on the photodetachment of negative ion near a metal surface. Besides the closed orbits previously found by Duet al. for the H in the electric field near a metal surface （J. Phys. B 43 035002 （2010））, some additional closed orbits are produced due to the effect of magnetic field. For a given ion surface distance and an electric field strength, the cross section depends sensitively on the magnetic field strength. As the magnetic field strength is very small, its influence can be neglected. With the increase of the magnetic field strength, the number of the closed orbits increases greatly and the oscillation in the cross section becomes much more complex. Therefore we can control the photodetachment cross section of the negative ion by changing the magnetic field strength. We hope that our results may guide future experimental studies for the photodetachment process of negative ion in the presence of external fields and surfaces.展开更多
Two-dimensional(2D)layered materials provide a promising alternative solution for overcoming the scal-ing limits in conventional Si-based devices.However,practical applications of 2D materials are facing crucial bottl...Two-dimensional(2D)layered materials provide a promising alternative solution for overcoming the scal-ing limits in conventional Si-based devices.However,practical applications of 2D materials are facing crucial bottlenecks,particularly that arising from the instability under ambient condition.The studies of degradation mechanisms and protecting strategies for overcoming the ambient instability of 2D materials have attracted extensive research attentions,both experimentally and theoretically.This review attempts to provide an overview on the recent progress of the encapsulation strategies for 2D materials.The en-capsulation strategies of mechanical transfer,polymer capping,atomic layer deposition,in-situ oxidation,and surface functionalization are systematically discussed for improving the ambient stability of 2D mate-rials.In addition,the current advances in air-stable and high-performance 2D materials-based field effect transistors(FETs)and photodetectors assisted by the encapsulation strategies are outlined.Furthermore,the future directions of encapsulation techniques of 2D materials for FETs and photodetectors applications are suggested.展开更多
Magnetocaloric material is the key working substance for magnetic refrigerant technology,for which the low-field and low-temperature magnetocaloric effect(MCE)performance is of great importance for practical applicati...Magnetocaloric material is the key working substance for magnetic refrigerant technology,for which the low-field and low-temperature magnetocaloric effect(MCE)performance is of great importance for practical applications at low temperatures.Here,a giant low-field magnetocaloric effect in ferromagnetically ordered Er_(1-x)Tm_(x)Al_(2)(0≤x≤1)compounds was reported,and the magnetic structure was characterized based on low-temperature neutron powder diffraction.With increasing Tm content from 0 to 1,the Curie temperature of Er_(1-x)Tm_(x)Al_(2)(0≤x≤1)compounds decreases from 16.0 K to 3.6 K.For Er_(0.7)Tm_(0.3)Al_(2) compound,it showed the largest low-field magnetic entropy change(–SM)with the peak value of 17.2 and 25.7 J/(kg K)for 0–1 T and 0–2 T,respectively.The(–SM)max up to 17.2 J/(kg K)of Er0.7Tm0.3Al2 compound for 0–1 T is the largest among the intermetallic magnetocaloric materials ever reported at temperatures below 20 K.The peak value of adiabatic temperature change(Tad)max was determined as 4.13 K and 6.87 K for 0–1 T and 0–2 T,respectively.The characteristic of second-order magnetic transitions was confirmed on basis of Arrott plots,the quantitative criterion of exponent n,rescaled universal curves,and the mean-field theory criterion.The outstanding low-field MCE performance with low working temperatures indicates that Er_(1-x)Tm_(x)Al_(2)(0≤x≤1)compounds are promising candidates for magnetic cooling materials at liquid hydrogen and liquid helium temperatures.展开更多
The investigation of two-dimensional(2D)materials has advanced into practical device applications,such as cascaded logic stages.However,incompatible electrical properties and inappropriate logic levels remain enormous...The investigation of two-dimensional(2D)materials has advanced into practical device applications,such as cascaded logic stages.However,incompatible electrical properties and inappropriate logic levels remain enormous challenges.In this work,a doping-free strategy is investigated by top gated(TG)MoS_(2) field-effect transistors(FETs)using various metal gates(Au,Cu,Ag,and Al).These metals with different work functions provide a convenient tuning knob for controlling threshold voltage(V_(th))for MoS_(2) FETs.For instance,the Al electrode can create an extra electron doping(n-doping)behavior in the MoS_(2) TG-FETs due to a dipole effect at the gate-dielectric interface.In this work,by achieving matched electrical properties for the load transistor and the driver transistor in an inverter circuit,we successfully demonstrate wafer-scale MoS_(2) inverter arrays with an optimized inverter switching threshold voltage(V_(M))of 1.5 V and a DC voltage gain of 27 at a supply voltage(V_(DD))of 3 V.This work offers a novel scheme for the fabrication of fully integrated multistage logic circuits based on wafer-scale MoS_(2) film.展开更多
Herein,we report bifunctional molybdenum-doped nickel sulfide on nickel foam(Mo-NiS_(x)/NF)for magnetic field-enhanced overall water splitting under alkaline conditions.Proper doping of Mo can lead to optimization of ...Herein,we report bifunctional molybdenum-doped nickel sulfide on nickel foam(Mo-NiS_(x)/NF)for magnetic field-enhanced overall water splitting under alkaline conditions.Proper doping of Mo can lead to optimization of the electronic structure of NiS_(x),which accelerates the dissociation of H2O and the adsorption of OH−in the hydrogen evolution reaction(HER)and the oxygen evolution reaction(OER)processes,respectively.In addition,the magnetically active Mo-NiS_(x)/NF can further enhance the HER and OER activity under an applied magnetic field due to the magnetoresistance effect and the ferromagnetic(FM)exchange-field penetration effect.As a result,Mo-NiS_(x)/NF requires low overpotentials of 307 mV at 50mA cm^(−2)(for OER)and 136 mV at 10mA cm^(−2)(for HER)under a magnetic field of 10000 G.Furthermore,the electrolytic cell constructed by the bifunctional Mo-NiS_(x)/NFs as both the cathode and the anode shows a low cell voltage of 1.594 V at 10 mA cm^(−2)with optimal stability over 60 h under the magnetic field.Simultaneous enhancement of the HER and OER processes by an external magnetic field through rational design of electrocatalysts might be promising for overall water splitting applications.展开更多
基金financially supported by the National Natural Science Foundation of China(51977097).
文摘Solvated zinc ions are prone to undergo desolvation at the electrode/electrolyte interfaces,and unstable H_(2)O molecules within the solvated sheaths tend to trigger hydrogen evolution reaction(HER),further accelerating interfaces decay.Herein,we propose for the first time a novel strategy to enhance the interfacial stabilities by insitu dynamic reconstruction of weakly solvated Zn2þduring the desolvation processes at heterointerfaces.Theoretical calculations indicate that,due to built-in electric field effects(BEFs),the plating/stripping mechanism shifts from[Zn(H_(2)O)_(6)]_(2)þto[Zn(H_(2)O)_(5)(SO_(4))^(2-)]_(2)þwithout additional electrolyte additives,reducing the solvation ability of H_(2)O,enhancing the competitive coordination of SO_(4)^(2-),essentially eliminating the undesirable side effects of anodes.Hence,symmetric cells can operate stably for 3000 h(51.7-times increase in cycle life),and the full cells can operate stably for 5000 cycles(51.5-times increase in cycle life).This study provides valuable insights into the critical design of weakly solvated Zn^(2+) þand desolvation processes at heterointerfaces.
基金supported by the National Key R&D Program of China(No.2023YFC3707201)the National Natural Science Foundation of China(No.52320105003)+2 种基金the Informatization Plan of Chinese Academy of Sciences(No.CAS-WX2023PY-0103)the Fundamental Research Funds for the Central Universities(No.E3ET1803)sponsored by the Alliance of International Science Organizations(ANSO)scholarship for young talents.
文摘A sensor,serving as a transducer,produces a quantifiable output in response to a predetermined input stimulus,which may be of a chemical or physical nature.The field of gas detection has experienced a substantial surge in research activity,attributable to the diverse functionalities and enhanced accessibility of advanced active materials.In this work,recent advances in gas sensors,specifically those utilizing Field Effect Transistors(FETs),are summarized,including device configurations,response characteristics,sensor materials,and application domains.In pursuing high-performance artificial olfactory systems,the evolution of FET gas sensors necessitates their synchronization with material advancements.These materials should have large surface areas to enhance gas adsorption,efficient conversion of gas input to detectable signals,and strong mechanical qualities.The exploration of gas-sensitive materials has covered diverse categories,such as organic semiconductor polymers,conductive organic compounds and polymers,metal oxides,metal-organic frameworks,and low-dimensional materials.The application of gas sensing technology holds significant promise in domains such as industrial safety,environmental monitoring,and medical diagnostics.This comprehensive review thoroughly examines recent progress,identifies prevailing technical challenges,and outlines prospects for gas detection technology utilizing field effect transistors.The primary aim is to provide a valuable reference for driving the development of the next generation of gas-sensitive monitoring and detection systems characterized by improved sensitivity,selectivity,and intelligence.
基金the National Natural Science Foundation of China(U21A20497)Singapore National Research Foundation Investigatorship(Grant No.NRF-NRFI08-2022-0009)。
文摘The development of various artificial electronics and machines would explosively increase the amount of information and data,which need to be processed via in-situ remediation.Bioinspired synapse devices can store and process signals in a parallel way,thus improving fault tolerance and decreasing the power consumption of artificial systems.The organic field effect transistor(OFET)is a promising component for bioinspired neuromorphic systems because it is suitable for large-scale integrated circuits and flexible devices.In this review,the organic semiconductor materials,structures and fabrication,and different artificial sensory perception systems functions based on neuromorphic OFET devices are summarized.Subsequently,a summary and challenges of neuromorphic OFET devices are provided.This review presents a detailed introduction to the recent progress of neuromorphic OFET devices from semiconductor materials to perception systems,which would serve as a reference for the development of neuromorphic systems in future bioinspired electronics.
基金supported by the National Natural Science Foundation of China(52272022)Key Program of the Natural Science Foundation of Hubei Province of China(2021CFA071).
文摘High alumina slag will cause severe corrosion at the interface of alumina refractory,and the wetting behavior of slag is a key factor influencing the corrosion resistance of refractory ceramics.The static magnetic field is a promising solution for improvement in the slag resistance of refractory.The wetting of alumina refractory ceramics with different basicities of high alumina slags under a weak static magnetic field was analyzed,given that a weak static magnetic field can affect the corrosion behavior of refractory ceramics.Taking slag S_(3) as an example,when there was an external static magnetic field of 1.0 mT at 1600 ℃,the thickness of calcium aluminate reaction layer at the interface decreased by 36.7%,the denting depth of interface decreased by 35.6%,and the apparent wetting angle increased by 20%.The living radicals and their formation path in oxide melts were verified by first-principles calculation combined with electron paramagnetic resonance spectroscopy analysis.The influence of the flux density of a weak static magnetic field on the wetting behavior of slags was also explored.The contact angle of the slags increased owing to the inhibitory effect of magnetic field on the radicalinvolved reaction at the interface of the slag and the alumina refractory ceramic.The relationships between the magnetic flux density,diffusion coefficient,slag microstructure(hyperfine coupling constant),and contact angle were established.This provides a theoretical basis for the field control of radical involved reactive wetting between inorganic oxide slags and solid oxide ceramics.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61627813,62204018,and 61571023)the Beijing Municipal Science and Technology Project(Grant No.Z201100004220002)+2 种基金the National Key Technology Program of China(Grant No.2017ZX01032101)the Program of Introducing Talents of Discipline to Universities in China(Grant No.B16001)the VR Innovation Platform from Qingdao Science and Technology Commission.
文摘Dzyaloshinskii–Moriya interaction(DMI) is under extensive investigation considering its crucial status in chiral magnetic orders, such as Néel-type domain wall(DW) and skyrmions. It has been reported that the interfacial DMI originating from Rashba spin–orbit coupling(SOC) can be linearly tuned with strong external electric fields. In this work, we experimentally demonstrate that the strength of DMI exhibits rapid fluctuations, ranging from 10% to 30% of its original value, as a function of applied electric fields in Pt/Co/MgO heterostructures within the small field regime(< 10-2V/nm). Brillouin light scattering(BLS) experiments have been performed to measure DMI, and first-principles calculations show agreement with this observation, which can be explained by the variation in orbital hybridization at the Co/MgO interface in response to the weak electric fields. Our results on voltage control of DMI(VCDMI) suggest that research related to the voltage control of magnetic anisotropy for spin–orbit torque or the motion control of skyrmions might also have to consider the role of the external electric field on DMI as small voltages are generally used for the magnetoresistance detection.
文摘ZnO nanosheets with thickness of a few nanometers are prepared by vapor transport and condensation method, and their structure and optical properties are well characterized. Field effect transistor （FET） and ultraviolet （UV） sensors are fabricated based on the ZnO nanosheets. Due to the peculiar structure of nanosheet, the FET shows n-type enhanced mode behavior and high electrical performance, and its field-effect mobility and on/off cur- rent ratio can reach 256 cm2/（V.s） and ~10^8, respectively. Moreover, the response of UV sensors can also be remarkably improved to ~3 × 10^8. The results make the ZnO nanosheets be a good material for the applications in nanoelectronic and optoelectronic devices.
基金support from the National Natural Science Foundation of China(No.21975067)Shenzhen Science and Technology Program(No.JCYJ20220530160407016).
文摘In order to address challenges posed by the reduction in transistor size,researchers are concentrating on two-dimensional(2D)materials with high dielectric constants and large band gaps.Monoclinic ZrO_(2)(m-ZrO_(2))has emerged as a promising gate dielectric material due to its suitable dielectric constant,wide band gap,ideal valence-band offset,and good thermodynamic stability.However,current deposition methods face compatibility issues with 2D semiconductors,highlighting the need for high-quality dielectrics and interfaces.Here,high-quality 2D m-ZrO_(2)single crystals are successfully prepared using a onestep chemical vapor deposition(CVD)method,aided by 5A molecular sieves for oxygen supply.The prepared ZrO_(2)is utilized as a gate dielectric in the construction of MoS2 field-effect transistors(FETs)to investigate its electrical property.The FETs exhibit a high carrier mobility of up to 5.50 cm^(2)·V^(−1)·s^(−1),and a current switching ratio(Ion/off)of approximately 10^(4),which aligns with the current standards of logic circuits,indicating that ZrO_(2)has application value as a gate dielectric.The successful onestep preparation of single-crystal ZrO_(2)paves the way for the utilization of high-κgate dielectrics and creates favorable conditions for the development of high-performance semiconductor devices,offering new possibilities for transistor miniaturization.
基金supported by the National Natural Science Foundation of China(52301259 and 22208019)the Research Fund Program for Young Scholars of Beijing Institute of Technology。
文摘Electrochemical carbon dioxide reduction reaction(CO_(2)RR)converts CO_(2) into valuable chemicals by consuming renewable electricity at mild conditions,making it a promising approach to achieving carbon neutrality.However,the reaction of CO_(2) with hydroxide ions to form carbonates leads to low carbon utilization and energy efficiency in near-neutral or alkaline CO_(2)RR.The high concentration of protons in acidic media can effectively mitigate carbonate formation and deposition,thereby significantly minimizing carbon loss and energy consumption.Unfortunately,hydrogen evolution reaction(HER)is more kinetically favorable than CO_(2)RR in acidic media.Herein,we comprehensively overview recent progress in acidic CO_(2)RR and propose two strategies derived from the competing reaction pathways of HER and CO_(2)RR:one focuses on regulating the H+mass transport,while the other aims to modulate the intrinsic kinetic activity of CO_(2)RR.The two strategies are designed to compete for the limited active sites on the catalyst surface,inhibit side reactions,and enhance the activity and selectivity of CO_(2)RR.The representative approaches include modulating the interface electric field,constructing a local alkaline environment,and regulating competing adsorption sites.Finally,we also review the technical challenges and future perspectives of acidic CO_(2)RR coupled with membrane electrode assemblies(MEAs).
基金supported by the National Key Research and Development program of China (Nos. 2024YFA1410700 and 2021YFA1200700)the National Natural Science Foundation of China (Nos. T2222025, 62174053, 62474065 and 52372120)+3 种基金the Natural Science Foundation of Chongqing (CSTB2024NSCQ-JQX0005)the Shanghai Science and Technology Innovation Action Plan (Nos. 24QA2702300 and 24YF2710400)the National Postdoctoral Program (GZB20240225)the Fundamental Research Funds for the Central Universities。
文摘Poly(vinylidene-trifluoroethylene) [P(VDF-TrFE)] copolymer films generally demonstrate limited compatibility with organic semiconductors. The material is frequently compromised by exposure to organic semiconductor solutions and other fabrication processes utilized in the production of organic ferroelectric transistors. In this study, an organic ferroelectric field effect transistor(OFeFET) with the 6,13-Bis(triisopropylsilylethynyl) pentacene(TIPS-pentacene) channel is fabricated, in which the aluminum oxide(Al_(2)O_(3)) interlayer is used to improve compatibility. The device displays polymorphic memory and synaptic plasticity of long-term potentiation and depression. Furthermore, an artificial neural network constructed using our devices is simulated to succeed in recognizing the MNIST handwritten digit database with a high accuracy of 92.8%. This research offers a viable approach to enhance the compatibility of the organic ferroelectric polymer P(VDF-TrFE) with organic semiconductors.
文摘In recent years,carbon nanotube field effect transistor(CNTFET)has become an attractive alternative to silicon for designing high-performance,highly stable,and low-power static random access memory(SRAM).SRAM serves as a cache memory in computers and many portable devices.Carbon nanotubes(CNTs),because of their exceptional transport capabilities,outstanding thermal conductivities,and impressive current handling capacities,have demonstrated great potential as an alternative device to the standard complementary metal-oxide-semiconductor(CMOS).The SRAM cell design using CNTFET is being compared to SRAM cell designs built using traditional CMOS technology.This paper presents the comprehensive analysis of CMOS&CNTFET based 8T SRAM cell design.Because of the nanoscale size,ballistic transport,and higher carrier mobility of the semiconducting nanotubes in CNTFET,it is integrated into the 8T SRAM cell.The approach incorporates several nonidealities,including the presence of quantum confinement consequences in the peripheral and transverse prescriptions,acoustic and transparent photon diffraction in the region surrounding the channel,as well as the screening effects by parallel CNTs in CNTFETs with multiple CNTs.By incorporating Stanford University CNTFET model in CADENCE(virtuoso)32 nm simulation,we have found that CNTFET SRAM cell is 4 times faster in terms of write/read delay and the write/read power delay product(PDP)value is almost 5 times lower compared to CMOS based SRAM.We have also analyzed the effect of temperature&different tube positions of CNTs on the performance evaluation of the 8T SRAM cell.
基金supported by the National Key Research&Development Projects of China(Grant No.2022YFA1204100)National Natural Science Foundation of China(Grant No.62488201)+1 种基金CAS Project for Young Scientists in Basic Research(YSBR-003)the Innovation Program of Quantum Science and Technology(2021ZD0302700)。
文摘As a typical in-memory computing hardware design, nonvolatile ternary content-addressable memories(TCAMs) enable the logic operation and data storage for high throughout in parallel big data processing. However,TCAM cells based on conventional silicon-based devices suffer from structural complexity and large footprintlimitations. Here, we demonstrate an ultrafast nonvolatile TCAM cell based on the MoTe2/hBN/multilayergraphene (MLG) van der Waals heterostructure using a top-gated partial floating-gate field-effect transistor(PFGFET) architecture. Based on its ambipolar transport properties, the carrier type in the source/drain andcentral channel regions of the MoTe2 channel can be efficiently tuned by the control gate and top gate, respectively,enabling the reconfigurable operation of the device in either memory or FET mode. When working inthe memory mode, it achieves an ultrafast 60 ns programming/erase speed with a current on-off ratio of ∼105,excellent retention capability, and robust endurance. When serving as a reconfigurable transistor, unipolar p-typeand n-type FETs are obtained by adopting ultrafast 60 ns control-gate voltage pulses with different polarities.The monolithic integration of memory and logic within a single device enables the content-addressable memory(CAM) functionality. Finally, by integrating two PFGFETs in parallel, a TCAM cell with a high current ratioof ∼10^(5) between the match and mismatch states is achieved without requiring additional peripheral circuitry.These results provide a promising route for the design of high-performance TCAM devices for future in-memorycomputing applications.
基金supported by the National Key Research and Development Program of China under Grant Nos.2021YFC2203004,2021YFA0718304,2020YFC2201501RGC is supported by the National Natural Science Foundation of China under Grants Nos.11947302,11991052,11690022,11821505 and 11851302+8 种基金the Strategic Priority Research Program of the Chinese Academy of Sciences(CAS)under Grant Nos.XDB23030100 and XDA15020701the Key Research Program of the CAS under Grant No.XDPB15the Key Research Program of Frontier Sciences of CAS.SJW is supported by the National Key Research and Development Program of China under Grant Nos.2021YFC2203004 and 2021YFA0718304the National Natural Science Foundation of China under Grant Nos.12422502 and 12105344the China Manned Space Project under Grant No.CMS-CSST-2021-B01JHY is supported by the National Science Foundation of China under Grant Nos.12022514,11875003 and 12047503the National Key Research and Development Program of China under Grant Nos.2020YFC2201501 and 2021YFA0718304the CAS Project for Young Scientists in Basic Research under Grant No.YSBR-006the Key Research Program of the CAS under Grant No.XDPB15.
文摘The future space-borne gravitational wave(GW)detectors would provide a promising probe for the new physics beyond the standard model that admits the first-order phase transitions.The predictions for the GW background vary sensitively among different concrete particle physics models but also share a large degeneracy in the model buildings,which motivates an effective model description on the phase transition based on different patterns of the electroweak symmetry breaking(EWSB).In this paper,using the scalar N-plet model as a demonstration,we propose an effective classification for three different patterns of EWSB:(1)radiative symmetry breaking with classical scale invariance,(2)the Higgs mechanism in a generic scalar extension,and(3)higher-dimensional operators.We conclude that a strong first-order phase transition could be realized for(1)and(2)with a small quartic coupling and a small isospin of an additional N-plet field for the light scalar field model with and without the classical scale invariance,and(3)with a large mixing coupling between scalar fields and a large isospin of the N-plet field for the heavy scalar field model.
基金ARS thanks the Ministry of Minority Affairs,Government of India,for financial support through Maulana Azad National Fellowship under Grant No.F.82-27/2019(SA-Ⅲ).
文摘For understanding the hierarchies of fermion masses and mixing,we extend the Standard Model(SM)gauge group with U(1)_(X) and Z_(2) symmetry.The field content of the SM is augmented by three heavy right-handed neutrinos,two new scalar singlets,and a scalar doublet.U(1)_(X) charges of different fields are determined after satisfying anomaly cancellation conditions.In this scenario,the fermion masses are generated through higher-dimensional effective operators with O(1)Yukawa couplings.The small neutrino masses are obtained through type-1 seesaw mechanism using the heavy right-handed neutrino fields,whose masses are generated by the new scalar fields.We discuss the flavour-changing neutral current processes that arise due to the sequential nature of U(1)_(X) symmetry.We have written effective higher-dimensional operators in terms of renormalizable dimension-four operators by introducing vector-like fermions.
基金supported by the National Natural Science Foundation of China(Nos.61521064,61522408,61574169,6 1334007,61474136,61574166)the Ministry of Science andTechnology of China(Nos.2016YFA0201803,2016YFA0203800,2017YFB0405603)+2 种基金the Key Research Program of Frontier Sciences of Chinese Academy of Sciences(Nos.QYZDB-SSWJSC048,QYZDY-SSW-JSC001)the Beijing Municipal Science and Technology Project(No.Z171100002017011)the Opening Project of the Key Laboratory of Microelectronic Devices&Integration Technology,Institute of Microelectronics of Chinese Academy of Sciences
文摘As a promising ultra-wide bandgap semiconductor, gallium oxide(Ga_2O_3) has attracted increasing attention in recent years. The high theoretical breakdown electrical field(8 MV/cm), ultra-wide bandgap(～ 4.8 eV) and large Baliga's figure of merit(BFOM) of Ga_2O_3 make it a potential candidate material for next generation high-power electronics, including diode and field effect transistor(FET). In this paper, we introduce the basic physical properties of Ga_2O_3 single crystal, and review the recent research process of Ga_2O_3 based field effect transistors. Furthermore, various structures of FETs have been summarized and compared, and the potential of Ga_2O_3 is preliminary revealed. Finally, the prospect of the Ga_2O_3 based FET for power electronics application is analyzed.
基金financially supported by National Natural Science Foundation of China(Grant Nos.51372202,51402237,51532003,51602264)State Key Laboratory of Traction Power(Grand No.2015TPL Z01)
文摘The effect of the applied electric field on the conductive behavior of zirconia ceramics is studied by measuring its initial current-voltage curve at various temperatures. The results show that when the field strength is higher than the threshold for flash-sintering, the curves exhibit a nonlinear behavior by having an additional current on top of the linear current according to Ohm＇s law. Analyzing its transport behavior reveals that the additional current density is due to the extra oxygen vacancies induced by the electric field. The formation rate of the extra vacancies and associated current was related to the field strength.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 11074104 and 10604045)the University Science and Technology Planning Program of Shandong Province of China (Grant No. J09LA02)
文摘Based on the closed-orbit theory, the magnetic field effect in the photodetachment of negative ion in the electric field near a metal surface is studied for the first time. The results show that the magnetic field can produce a significant effect on the photodetachment of negative ion near a metal surface. Besides the closed orbits previously found by Duet al. for the H in the electric field near a metal surface （J. Phys. B 43 035002 （2010））, some additional closed orbits are produced due to the effect of magnetic field. For a given ion surface distance and an electric field strength, the cross section depends sensitively on the magnetic field strength. As the magnetic field strength is very small, its influence can be neglected. With the increase of the magnetic field strength, the number of the closed orbits increases greatly and the oscillation in the cross section becomes much more complex. Therefore we can control the photodetachment cross section of the negative ion by changing the magnetic field strength. We hope that our results may guide future experimental studies for the photodetachment process of negative ion in the presence of external fields and surfaces.
基金supported by the National Natural Science Foundation of China (Nos. 21825103, 51902227 and 11574241)the Open Project of State Key Laboratory of Materials Processing and Die & Mould Technology, Huazhong University of Science and Technology, China (No. P2020-021)
文摘Two-dimensional(2D)layered materials provide a promising alternative solution for overcoming the scal-ing limits in conventional Si-based devices.However,practical applications of 2D materials are facing crucial bottlenecks,particularly that arising from the instability under ambient condition.The studies of degradation mechanisms and protecting strategies for overcoming the ambient instability of 2D materials have attracted extensive research attentions,both experimentally and theoretically.This review attempts to provide an overview on the recent progress of the encapsulation strategies for 2D materials.The en-capsulation strategies of mechanical transfer,polymer capping,atomic layer deposition,in-situ oxidation,and surface functionalization are systematically discussed for improving the ambient stability of 2D mate-rials.In addition,the current advances in air-stable and high-performance 2D materials-based field effect transistors(FETs)and photodetectors assisted by the encapsulation strategies are outlined.Furthermore,the future directions of encapsulation techniques of 2D materials for FETs and photodetectors applications are suggested.
基金supported by the National Key Research and Development Program of China(Nos.2021YFB3501202 and 2019YFB2005800)the Science Center of the National Science Foundation of China(No.52088101)+1 种基金the National Natural Science Foundation of China(Nos.51871019,52171170,52130103,51961145305,51971026,and 52171169)the Beijing Natural Science Foundation Key Program(Grant Nos.Z190007 and Z200007),and“111 Project”(No.B170003).
文摘Magnetocaloric material is the key working substance for magnetic refrigerant technology,for which the low-field and low-temperature magnetocaloric effect(MCE)performance is of great importance for practical applications at low temperatures.Here,a giant low-field magnetocaloric effect in ferromagnetically ordered Er_(1-x)Tm_(x)Al_(2)(0≤x≤1)compounds was reported,and the magnetic structure was characterized based on low-temperature neutron powder diffraction.With increasing Tm content from 0 to 1,the Curie temperature of Er_(1-x)Tm_(x)Al_(2)(0≤x≤1)compounds decreases from 16.0 K to 3.6 K.For Er_(0.7)Tm_(0.3)Al_(2) compound,it showed the largest low-field magnetic entropy change(–SM)with the peak value of 17.2 and 25.7 J/(kg K)for 0–1 T and 0–2 T,respectively.The(–SM)max up to 17.2 J/(kg K)of Er0.7Tm0.3Al2 compound for 0–1 T is the largest among the intermetallic magnetocaloric materials ever reported at temperatures below 20 K.The peak value of adiabatic temperature change(Tad)max was determined as 4.13 K and 6.87 K for 0–1 T and 0–2 T,respectively.The characteristic of second-order magnetic transitions was confirmed on basis of Arrott plots,the quantitative criterion of exponent n,rescaled universal curves,and the mean-field theory criterion.The outstanding low-field MCE performance with low working temperatures indicates that Er_(1-x)Tm_(x)Al_(2)(0≤x≤1)compounds are promising candidates for magnetic cooling materials at liquid hydrogen and liquid helium temperatures.
基金supported by the National Key Research and Development Program (No.2016YFA0203900)Innovation Program of Shanghai Municipal Education Commission (No.2021–01–07–00–07-E00077)+1 种基金Shanghai Municipal Science and Technology Commission (No.21DZ1100900)National Natural Science Foundation of China (Nos.51802041,61904032,and 61874154)。
文摘The investigation of two-dimensional(2D)materials has advanced into practical device applications,such as cascaded logic stages.However,incompatible electrical properties and inappropriate logic levels remain enormous challenges.In this work,a doping-free strategy is investigated by top gated(TG)MoS_(2) field-effect transistors(FETs)using various metal gates(Au,Cu,Ag,and Al).These metals with different work functions provide a convenient tuning knob for controlling threshold voltage(V_(th))for MoS_(2) FETs.For instance,the Al electrode can create an extra electron doping(n-doping)behavior in the MoS_(2) TG-FETs due to a dipole effect at the gate-dielectric interface.In this work,by achieving matched electrical properties for the load transistor and the driver transistor in an inverter circuit,we successfully demonstrate wafer-scale MoS_(2) inverter arrays with an optimized inverter switching threshold voltage(V_(M))of 1.5 V and a DC voltage gain of 27 at a supply voltage(V_(DD))of 3 V.This work offers a novel scheme for the fabrication of fully integrated multistage logic circuits based on wafer-scale MoS_(2) film.
基金National Natural Science Foundation of China,Grant/Award Numbers:21871065,22071038Heilongjiang Touyan Team,Grant/Award Number:HITTY‐20190033Interdisciplinary Research Foundation of HIT,Grant/Award Number:IR2021205。
文摘Herein,we report bifunctional molybdenum-doped nickel sulfide on nickel foam(Mo-NiS_(x)/NF)for magnetic field-enhanced overall water splitting under alkaline conditions.Proper doping of Mo can lead to optimization of the electronic structure of NiS_(x),which accelerates the dissociation of H2O and the adsorption of OH−in the hydrogen evolution reaction(HER)and the oxygen evolution reaction(OER)processes,respectively.In addition,the magnetically active Mo-NiS_(x)/NF can further enhance the HER and OER activity under an applied magnetic field due to the magnetoresistance effect and the ferromagnetic(FM)exchange-field penetration effect.As a result,Mo-NiS_(x)/NF requires low overpotentials of 307 mV at 50mA cm^(−2)(for OER)and 136 mV at 10mA cm^(−2)(for HER)under a magnetic field of 10000 G.Furthermore,the electrolytic cell constructed by the bifunctional Mo-NiS_(x)/NFs as both the cathode and the anode shows a low cell voltage of 1.594 V at 10 mA cm^(−2)with optimal stability over 60 h under the magnetic field.Simultaneous enhancement of the HER and OER processes by an external magnetic field through rational design of electrocatalysts might be promising for overall water splitting applications.
