m thin-film fully-depleted SOI CMOS devices with elevated source/drain structure are fabricated by a novel technology.Key process technologies are demonstrated.The devices have quasi-ideal subthreshold properties;the ...m thin-film fully-depleted SOI CMOS devices with elevated source/drain structure are fabricated by a novel technology.Key process technologies are demonstrated.The devices have quasi-ideal subthreshold properties;the subthreshold slope of nMOSFETs is 65mV/decade,while that of pMOSFETs is 69mV/decade.The saturation current of 1.2μm nMOSFETs is increased by 32% with elevated source/drain structure,and that of 1.2μm pMOSFETs is increased by 24%.The per-stage propagation delay of 101-stage fully-depleted SOI CMOS ring oscillator is 75ps with 3V supply voltage.展开更多
The effect of drain-source voltage on A1GaAs/InGaAs PHEMTs thermal resistance is studied by experimental measuring and simulation. The result shows that A1GaAs/InGaAs PHEMTs thermal resistance presents a downward tren...The effect of drain-source voltage on A1GaAs/InGaAs PHEMTs thermal resistance is studied by experimental measuring and simulation. The result shows that A1GaAs/InGaAs PHEMTs thermal resistance presents a downward trend under the same power dissipation when the drain-source voltage （VDs） is decreased. Moreover, the relatively low VDS and large drain-source current （IDs） result in a lower thermal resistance. The chip-level and package-level thermal resistance have been extracted by the structure function method. The simulation result indicated that the high electric field occurs at the gate contact where the temperature rise occurs. A relatively low VDS leads to a relatively low electric field, which leads to the decline of the thermal resistance.展开更多
随着5G通信、毫米波雷达和卫星通信系统对高频大功率器件线性度要求的不断提升,传统AlGaN/GaN高电子迁移率晶体管(High Electron Mobility Transfer,HEMT)在功率放大器应用中面临的非线性失真问题日益凸显。本文针对高线性度氮化镓功率...随着5G通信、毫米波雷达和卫星通信系统对高频大功率器件线性度要求的不断提升,传统AlGaN/GaN高电子迁移率晶体管(High Electron Mobility Transfer,HEMT)在功率放大器应用中面临的非线性失真问题日益凸显。本文针对高线性度氮化镓功率放大器件的设计需求,基于Silvaco TCAD软件,系统研究了栅源/栅漏间距(Lgs/Lgd)、异质结势垒层Al组分分布以及栅下凹槽结构对GaN HEMT器件转移特性及线性度关键指标--栅压摆幅(Gate Voltage Swing,GVS)的影响规律。通过对比分析发现,减小栅源栅漏间距以及增大栅源栅漏Al组分能够有效提高器件的GVS。减小栅下Al组分可以改善器件GVS大小并使器件的阈值电压正漂,随后结合栅下凹槽使得器件的GVS提高了55.56%。本研究为高线性度GaN功率器件的结构优化提供了系统的设计方法和理论依据。展开更多
利用0.35μm工艺条件实现了性能优良的小尺寸全耗尽的器件硅绝缘体技术(SOI)互补金属氧化物半导体(FD SOI CMOS)器件,器件制作采用双多晶硅栅工艺、低掺杂浓度源/漏(LDD)结构以及突起的源漏区。这种结构的器件防止漏的击穿,减小短沟道效...利用0.35μm工艺条件实现了性能优良的小尺寸全耗尽的器件硅绝缘体技术(SOI)互补金属氧化物半导体(FD SOI CMOS)器件,器件制作采用双多晶硅栅工艺、低掺杂浓度源/漏(LDD)结构以及突起的源漏区。这种结构的器件防止漏的击穿,减小短沟道效应(SCE)和漏感应势垒降低效应(DIBL);突起的源漏区增加了源漏区的厚度并减小源漏区的串联电阻,增强了器件的电流驱动能力。设计了101级环形振荡器电路,并对该电路进行测试与分析。根据在3V工作电压下环形振荡器电路的振荡波形图,计算出其单级门延迟时间为45ps,远小于体硅CMOS的单级门延迟时间。展开更多
为探究CO_(2)浓度升高和不同氮肥水平下源库处理对粳稻茎鞘非结构性碳水化合物(NSC)积累和转运的影响,利用开顶式气室(OTC),设置2个CO_(2)浓度([CO_(2)]):对照(背景大气,a[CO_(2)])和在背景大气[CO_(2)]基础上升高200μmol·mol^(-1...为探究CO_(2)浓度升高和不同氮肥水平下源库处理对粳稻茎鞘非结构性碳水化合物(NSC)积累和转运的影响,利用开顶式气室(OTC),设置2个CO_(2)浓度([CO_(2)]):对照(背景大气,a[CO_(2)])和在背景大气[CO_(2)]基础上升高200μmol·mol^(-1)(e[CO_(2)])。以常规粳稻"南粳9108"为试验材料,在OTC内采用盆栽方式,设置低N(N1,10 g N·m^(-2))、中N(N2,20 g N·m^(-2))和高N(N3,30 g N·m^(-2))3个施N水平。抽穗期源库改变设剪叶(LC)和疏花(SR)处理,以不处理为对照。测定并计算了抽穗期和成熟期叶片N含量、茎鞘NSC积累量(TM_(NSC))、NSC表观转运量(ATMNSC)及其对籽粒产量的表观贡献率(AC_(NSC))。采用方差分析、相关分析和逐步回归方法对上述观测数据进行分析。结果表明,[CO_(2)]升高显著降低抽穗期叶片N含量,显著促进中N水平的NSC积累。在不同[CO_(2)]和N水平下,SR处理均导致成熟期茎鞘TM_(NSC)显著升高,ATM_(NSC)和AC_(NSC)显著降低;在背景大气和不同N水平下,LC处理均显著降低成熟期TM_(NSC),显著提高ATM_(NSC),但[CO_(2)]升高下LC处理对成熟期TM_(NSC)和ATM_(NSC)均无显著影响。LC处理对籽粒产量及其构成未产生显著影响。粒叶比越高,成熟期TM_(NSC)和千粒重越低,ATM_(NSC)、AC_(NSC)、籽粒产量和收获指数越高。综合影响AC_(NSC)的因素为粒叶比、抽穗期和成熟期TM_(NSC);综合影响籽粒产量的因素为粒叶比、成熟期叶片N含量和TM_(NSC),这些综合影响均可用多元回归模型定量表述。展开更多
文摘m thin-film fully-depleted SOI CMOS devices with elevated source/drain structure are fabricated by a novel technology.Key process technologies are demonstrated.The devices have quasi-ideal subthreshold properties;the subthreshold slope of nMOSFETs is 65mV/decade,while that of pMOSFETs is 69mV/decade.The saturation current of 1.2μm nMOSFETs is increased by 32% with elevated source/drain structure,and that of 1.2μm pMOSFETs is increased by 24%.The per-stage propagation delay of 101-stage fully-depleted SOI CMOS ring oscillator is 75ps with 3V supply voltage.
基金Project supported by the National Natural Science Foundation of China(Nos.61376077,61201046,61204081)the Beijing Natural Science Foundation(Nos.4132022,4122005)+1 种基金the Guangdong Strategic Emerging Industry Project of China(No.2012A080304003)the Doctoral Fund of Innovation of Beijing University of Technology
文摘The effect of drain-source voltage on A1GaAs/InGaAs PHEMTs thermal resistance is studied by experimental measuring and simulation. The result shows that A1GaAs/InGaAs PHEMTs thermal resistance presents a downward trend under the same power dissipation when the drain-source voltage （VDs） is decreased. Moreover, the relatively low VDS and large drain-source current （IDs） result in a lower thermal resistance. The chip-level and package-level thermal resistance have been extracted by the structure function method. The simulation result indicated that the high electric field occurs at the gate contact where the temperature rise occurs. A relatively low VDS leads to a relatively low electric field, which leads to the decline of the thermal resistance.
文摘随着5G通信、毫米波雷达和卫星通信系统对高频大功率器件线性度要求的不断提升,传统AlGaN/GaN高电子迁移率晶体管(High Electron Mobility Transfer,HEMT)在功率放大器应用中面临的非线性失真问题日益凸显。本文针对高线性度氮化镓功率放大器件的设计需求,基于Silvaco TCAD软件,系统研究了栅源/栅漏间距(Lgs/Lgd)、异质结势垒层Al组分分布以及栅下凹槽结构对GaN HEMT器件转移特性及线性度关键指标--栅压摆幅(Gate Voltage Swing,GVS)的影响规律。通过对比分析发现,减小栅源栅漏间距以及增大栅源栅漏Al组分能够有效提高器件的GVS。减小栅下Al组分可以改善器件GVS大小并使器件的阈值电压正漂,随后结合栅下凹槽使得器件的GVS提高了55.56%。本研究为高线性度GaN功率器件的结构优化提供了系统的设计方法和理论依据。
文摘利用0.35μm工艺条件实现了性能优良的小尺寸全耗尽的器件硅绝缘体技术(SOI)互补金属氧化物半导体(FD SOI CMOS)器件,器件制作采用双多晶硅栅工艺、低掺杂浓度源/漏(LDD)结构以及突起的源漏区。这种结构的器件防止漏的击穿,减小短沟道效应(SCE)和漏感应势垒降低效应(DIBL);突起的源漏区增加了源漏区的厚度并减小源漏区的串联电阻,增强了器件的电流驱动能力。设计了101级环形振荡器电路,并对该电路进行测试与分析。根据在3V工作电压下环形振荡器电路的振荡波形图,计算出其单级门延迟时间为45ps,远小于体硅CMOS的单级门延迟时间。
文摘为探究CO_(2)浓度升高和不同氮肥水平下源库处理对粳稻茎鞘非结构性碳水化合物(NSC)积累和转运的影响,利用开顶式气室(OTC),设置2个CO_(2)浓度([CO_(2)]):对照(背景大气,a[CO_(2)])和在背景大气[CO_(2)]基础上升高200μmol·mol^(-1)(e[CO_(2)])。以常规粳稻"南粳9108"为试验材料,在OTC内采用盆栽方式,设置低N(N1,10 g N·m^(-2))、中N(N2,20 g N·m^(-2))和高N(N3,30 g N·m^(-2))3个施N水平。抽穗期源库改变设剪叶(LC)和疏花(SR)处理,以不处理为对照。测定并计算了抽穗期和成熟期叶片N含量、茎鞘NSC积累量(TM_(NSC))、NSC表观转运量(ATMNSC)及其对籽粒产量的表观贡献率(AC_(NSC))。采用方差分析、相关分析和逐步回归方法对上述观测数据进行分析。结果表明,[CO_(2)]升高显著降低抽穗期叶片N含量,显著促进中N水平的NSC积累。在不同[CO_(2)]和N水平下,SR处理均导致成熟期茎鞘TM_(NSC)显著升高,ATM_(NSC)和AC_(NSC)显著降低;在背景大气和不同N水平下,LC处理均显著降低成熟期TM_(NSC),显著提高ATM_(NSC),但[CO_(2)]升高下LC处理对成熟期TM_(NSC)和ATM_(NSC)均无显著影响。LC处理对籽粒产量及其构成未产生显著影响。粒叶比越高,成熟期TM_(NSC)和千粒重越低,ATM_(NSC)、AC_(NSC)、籽粒产量和收获指数越高。综合影响AC_(NSC)的因素为粒叶比、抽穗期和成熟期TM_(NSC);综合影响籽粒产量的因素为粒叶比、成熟期叶片N含量和TM_(NSC),这些综合影响均可用多元回归模型定量表述。
