Fluorination is a critical surface modification technique for enhancing the electrical performance of composite insulators.This study employs molecular simulations to examine the microstructure and space charge behavi...Fluorination is a critical surface modification technique for enhancing the electrical performance of composite insulators.This study employs molecular simulations to examine the microstructure and space charge behavior of fluorinated and non-fluorinated silicone rubber under an electric field,with experimental validation.The results show that fluorinated silicone rubber exhibits lower total energy,higher polarization,and stronger dipole moments compared to its non-fluorinated counterpart,shifting the material from an insulating to a conductive state.Under lower electric field strengths,the carbon-silicon bonds in fluorinated silicone rubber are longer,but it maintains geometric stability under higher fields.The energy gap changes across different fluorination modes and varies with electric field strength,indicating that fluorination affects conductivity differently at various field intensities.Both fluorination methods improve conductivity in the 0–3.8 V/nm range,with substitutional fluorination showing superior performance between 3.8 and 8.9 V/nm.Above 9.1 V/nm,fluorination maximizes conductivity.The fluorinated samples exhibit a greater redshift at higher electric fields,resulting in enhanced conductivity and improved surface charge distribution.These findings offer insights into the microscopic effects of fluorination on silicone rubber’s electrical properties,while experiments confirm that fluorination increases hydrophobicity and boosts DC flashover voltage,further enhancing the material’s performance.展开更多
Two-dimensional(2D)transition metal carbides and/or nitrides(MXenes)have exhibited many outstanding merits,including good conductivity,tunable bandgap,high electric capacity and optical transparency[1,2].In the past s...Two-dimensional(2D)transition metal carbides and/or nitrides(MXenes)have exhibited many outstanding merits,including good conductivity,tunable bandgap,high electric capacity and optical transparency[1,2].In the past several years,MXenes have shown promising advantages in the fields of energy storage,electrocatalysis,electromagnetic shielding,and(opto-)electronic devices.These excellent properties can be tuned by controlling the chemical composition,shape and size of the nanosheets,defects,boundaries,and surface functional groups,etc.展开更多
Polyvinylidene fluoride/lead zirconate titanate(PVDF/PZT)composite films have been prepared by direct ink writing and the effect of PZT content on crystallization behavior and electrical properties of film were system...Polyvinylidene fluoride/lead zirconate titanate(PVDF/PZT)composite films have been prepared by direct ink writing and the effect of PZT content on crystallization behavior and electrical properties of film were systematically investigated.The composite films were characterized by scanning electron microscope(SEM),X-ray diffractometer(XRD),Flourier transform infrared spectroscope(FTIR)and differential scanning calorimeter(DSC).The results show that,surface modified PZT powder(PZT@PDA)is successfully coated by polydopamine(PDA),resulting in a large number of polar groups that interact with the-CF_(2)-groups in PVDF,inducing the generation of polarβphase due to hydrogen bonding formed in the interaction.Theβphase content in composite film increases with increasing PZT@PDA content,up to 28.09%as with 5 wt.%PZT@PDA.PZT@PDA plays a role of nucleating agent to promote the generation of polar phases in the film and also acts as an impurity hindering the growth of nuclei to reduce crystallinity.Moreover,the presence of PZT@PDA in interfaces provides more sites for the occurrence of interfacial polarization and thus improving the electrical properties of films.The composite film with 5 wt.%PZT@PDA possesses the highest dielectric constant(8.61)and residual polarization value(0.6803μC/cm^(2)).展开更多
The microstructure and electrical properties of ZnO-based varistors with the SiO2 content in the range of 0-1.00mol% were prepared by a solid reaction route. The varistors were characterized by scanning electron micro...The microstructure and electrical properties of ZnO-based varistors with the SiO2 content in the range of 0-1.00mol% were prepared by a solid reaction route. The varistors were characterized by scanning electron microscopy, X-ray diffraction, energy-dispersive X-ray spectrometry, inductively coupled plasma-atomic emission spectrometry, and X-ray photoelectron spectroscopy. The results indicate that the average grain size of ZnO decreases with the SiO2 content increasing. A new second phase （Zn2SiO4） and a glass phase （Bi2SiO5） are found. Element Si mainly exists in the grain boundary and plays an important role in controlling the Bi2O3 vaporization. The electric measurement shows that the incorporation of SiO2 can significantly improve the nonlinear properties of ZnO-based varistors, and the nonlinear coefficients of the varistors with SiO2 are in the range of 36.8-69.5. The varistor voltage reaches the maximum value of 463 V/mm and the leakage current reaches the minimum value of 0.11 μA at the SiO2 content of 0.75mol%.展开更多
Highly conductive and transparent Al-doped ZnO （AZO） thin films were prepared from a zinc target containing Al （1.5 wt.%） by direct current （DC） and radio frequency （RF） reactive magnetron sputtering. The stru...Highly conductive and transparent Al-doped ZnO （AZO） thin films were prepared from a zinc target containing Al （1.5 wt.%） by direct current （DC） and radio frequency （RF） reactive magnetron sputtering. The structural, optical, and electrical properties of AZO films as-deposited and submitted to annealing treatment （at 300 and 400℃, respectively） were characterized using various techniques. The experimental results show that the properties of AZO thin films can be further improved by annealing treatment. The crystallinity of ZnO films improves after annealing treatment. The transmittances of the AZO thin films prepared by DC and RF reactive magnetron sputtering are up to 80% and 85% in the visible region, respectively. The electrical resistivity of AZO thin films prepared by DC reactive magnetron sputtering can be as low as 8.06 x 10-4 Ωcm after annealing treatment. It was also found that AZO thin films prepared by RF reactive magnetron sputtering have better structural and optical properties than that prepared by DC reactive magnetron sputtering.展开更多
Following are the comments for the queries raised by Prof. Pawel E. Tomaszewski on our published paper entitled ＂Structural, Optical, and Electrical Properties of Zn-Doped CdO Thin Films Fabricated by a Simplified Sp...Following are the comments for the queries raised by Prof. Pawel E. Tomaszewski on our published paper entitled ＂Structural, Optical, and Electrical Properties of Zn-Doped CdO Thin Films Fabricated by a Simplified Spray Pyrolysis Technique＂ by K. Usharani and A.R. Balu published in Acta Metall. Sin.展开更多
Y2O3-doped ZnO-based varistor ceramics were prepared using high-energy ball milling （HEBM） and low-temperature sin- tering technique, with voltage-gradient of 1934-2197 V/mm, non-linear coefficients of 20.8-21.8, le...Y2O3-doped ZnO-based varistor ceramics were prepared using high-energy ball milling （HEBM） and low-temperature sin- tering technique, with voltage-gradient of 1934-2197 V/mm, non-linear coefficients of 20.8-21.8, leakage currents of 0.59-1.04 μA, and densities of 5.46-5.57 g/cm3. With increasing Y2O3 content, the voltage-gradient increases because of the decrease of ZnO grain size; the non-linear coefficient and the leakage current improve but the density decreases because of more porosity; the donor con- centration and density of interface states decrease, whereas the barrier height and width increase because of the acceptor effect of Y2O3 in varistor ceramics.展开更多
Lu2O3-doped ZnO-Bi2O3-based varistor ceramics samples were prepared by a conventional mixed oxide route and sintered at temperatures in the range of 900-1 000°C,and the microstructures of the varistor ceramics sa...Lu2O3-doped ZnO-Bi2O3-based varistor ceramics samples were prepared by a conventional mixed oxide route and sintered at temperatures in the range of 900-1 000°C,and the microstructures of the varistor ceramics samples were characterized by X-ray diffractometry(XRD)and scanning electron microscopy(SEM);at the same time,the electrical properties and V-I characteristics of the varistor ceramics samples were investigated by a DC parameter instrument for varistors.The results show that the ZnO-Bi2O3-based varistor ceramics with 0.3%Lu2O3(molar fraction)sintered at 950°C exhibit comparatively ideal comprehensive electrical properties.The XRD analysis of the samples shows the presence of ZnO,Bi-rich,spinel Zn7Sb2O12 and Lu2O3-based phases.展开更多
ZnO-Bi2O3-based varistor ceramics doped with Yb2O3 in the range from 0 to 0.4% （molar fraction） were obtained by a solid reaction route. The X-ray diffractometry （XRD） and scanning electron microscopy （SEM） were...ZnO-Bi2O3-based varistor ceramics doped with Yb2O3 in the range from 0 to 0.4% （molar fraction） were obtained by a solid reaction route. The X-ray diffractometry （XRD） and scanning electron microscopy （SEM） were applied to characterize the phases and microstructure of the varistor ceramics, and a DC parameter instrument for varistor ceramics was applied to investigate their electrical properties and V-I characteristics. The XRD analysis of the samples shows that the ZnO phase, Bi2O3 phase, ZnTSbaOl2-type spinel phase and Zn2Bi3Sb3O14-type pyrochlore are present, and the Yb2O3 phases and Sb2O4 phases are found in varistor ceramics with increasing amounts of Yb2O3. The average size of ZnO grain firstly increases and then decreases with the increase of Yb2O3 content. The result also shows that the threshold voltage is between 656 V/nun and 1 232 V/mm, the nonlinear coefficient is in the range of 14.1-22.3, and the leakage current is between 0.60 μA and 19.6 μA. The 0.20% Yb2O3-added ZnO-Bi2O3-based varistor ceramics sintered at 900 ℃ have the best electrical characteristics.展开更多
The microstructure, electrical properties, and density of Dy2O3-doped ZnO-based varistor ceramics, prepared using high-energy ball milling （HEBM） and sintered at 800℃, were investigated by increasing the cooling ra...The microstructure, electrical properties, and density of Dy2O3-doped ZnO-based varistor ceramics, prepared using high-energy ball milling （HEBM） and sintered at 800℃, were investigated by increasing the cooling rate in the order of H （slow cooling in furnace） → L （cooling in furnace） → K （cooling in air）. With the increase in cooling rate, the grain size and density decreased, the breakdown voltage （VImA/mm） increased, and the nonlinear coefficient （α） and leakage current （IL） exhibited extremum. The sample with the cooling type L showed the best properties with the breakdown voltage of 2650 V/ram, o：of 20.3, IL of 5.2 laA, and density of 5.42 g/cm^3. The barrier height （ФB）, donor concentration （Nd）, density of the interface states （Nd）, and barrier width （ω） all exhibited extremum during the alteration in cooling rate. The different relative amount of Bi-rich phase and its distribution as well as the characteristic parameters of grain boundary, resulting from the alteration of cooling rate, led to the changes in the properties of varistor ceramics.展开更多
The effect of sintering temperature on microstructure, electrical properties, and pulse aging behavior of （V2O5-Mn3O4-Er2O3）-doped zinc oxide varistor ceramics was systematically studied. When the sintering temperat...The effect of sintering temperature on microstructure, electrical properties, and pulse aging behavior of （V2O5-Mn3O4-Er2O3）-doped zinc oxide varistor ceramics was systematically studied. When the sintering temperature increased, the average grain size increased from 6.1 to 8.7μm and the sintered density decreased from 5.52 to 5.43 g/cm3. The breakdown field decreased from 3856 to 922 V/cm with an increase in the sintering temperature up to 900 °C, whereas a further increase to 2352 V/cm at 925 °C. The nonlinear coefficient increased pronouncedly from 4.6 to 30.0 with an increase in the sintering temperature. The varistor ceramics sintered at 850 °C exhibited the best clamping characteristics, with the clamp voltage ratio of the range of 2.22-2.88 for pulse current of 1-25 A. The varistor ceramics sintered at 925 °C exhibited the strongest stability, with %ΔE1 mA/cm2=-8.8% after applying the multi-pulse current of 25 A.展开更多
In this study,Gd and Ca co-doped ceria electrolytes with the compositions of Ce_(0.8)Gd_(0.2-x)Ca_(x)O_(2-δ)(x=0-0.08) were prepared by a novel gel-casting method.The effects of the addition of Ca on the phase compos...In this study,Gd and Ca co-doped ceria electrolytes with the compositions of Ce_(0.8)Gd_(0.2-x)Ca_(x)O_(2-δ)(x=0-0.08) were prepared by a novel gel-casting method.The effects of the addition of Ca on the phase compositions,sintering behavio r,and electrical prope rties of samples were investigated.According to the scanning electron microscope results and relative density measurement results,it is found that the addition of particular quantity of CaO can promote the sintering densification with a uniform grain growth.When the sintering temperature is 1400℃,the sample with 6 mol% addition of Ca has the highest relative density,which reaches 98.5% of the theoretical density.The electrical properties testing results confirm that the electrical conductivity of the samples can be improved significantly by doping appropriate CaO content.The maximum conductivity of 0.082 S/cm can be obtained at 800℃ in the Ce_(0.8)Gd_(0.12)-Ca_(0.06)O_(1.87) sample.It suggests that CaO can be used as an effective sintering aid and a codopant on the optimization of electrical properties for ceria-based electrolytes.展开更多
An innovational method that poly(styrene-co-maleic anhydride)(SMA),a compatibilizer of immiscible nylon6/polystyrene(PA6/PS) blends,was first reacted with carbon black(CB) and then blended with PA6/PS,has been employe...An innovational method that poly(styrene-co-maleic anhydride)(SMA),a compatibilizer of immiscible nylon6/polystyrene(PA6/PS) blends,was first reacted with carbon black(CB) and then blended with PA6/PS,has been employed to prepare the PA6/PS/(SMA-CB) composites of which CB localized at the interface.In PA6/PS/CB blends,CB was found to preferentially localize in the PA6 phase.However,in the PA6/PS/(SMA-CB) blends,it was found that CB particles can be induced by SMA to localize at the interface.The electrical porperties of PA6/PS/(SMA-CB) composites were investigated.The results showed that the composites exhibited distinct triple percolation behavior,i.e.the percolation is governed by the percolation of CB in SMA phase,the continuity of SMA-CB at the interface and the continuity of PA6/PS interface.The percolation threshold of PA6/PS/(SMA-CB) was only 0.15 wt%,which is much lower than that of PA6/PS/CB.Moreover,the PTC(positive temperature coefficient) intensity of PA6/PS/(SMA-CB) composites was stronger than that of PA6/PS/CB and the negative temperature coefficient(NTC) effect was eliminated.The electrical properties of PA6/PS/(SMA-CB) were explained in terms of its special interface morphology:SMA and CB localize at interphase to form the conductive pathways.展开更多
TiO2/Au/TiO2 multilayer thin films were deposited at polymer substrate at room temperature using dc （direct current） magnetron sputtering method. By varying the thickness of each layer, the optical and electrical pr...TiO2/Au/TiO2 multilayer thin films were deposited at polymer substrate at room temperature using dc （direct current） magnetron sputtering method. By varying the thickness of each layer, the optical and electrical properties of the TiOz/Au/TiO2 multilayer films can be tailored to suit different applications. The thickness and optical properties of the Au layer and the quality of the Au-dielectric interfaces are critical for the electrical and optical performance of the Au-dielectric multilayer thin films. At the thickness of 8 rim, the Au layer forms a continuous structure having the lowest resistivity and it must be thin for high transmittance. The multilayer stack can be optimized to have a sheet resistance of 6 D./sq. at a transmittance over 80% at 680 nm in wavelength. The peak transmittance shifts towards the long wavelength region when the thickness of the two TiO2 （upper and lower） layers increases. When the film thickness of the two TiO2 film is 45 nm, a high transmittance value is obtained for the entire visible light wavelength region.展开更多
The piezoelectric, dielectric, and ferroelectric properties of the （LiCe） co-substituted calcium bismuth niobate （CaBi2Nb209, CBNO） are investigated. The piezoelectric properties of CBNO ceramics are significantly...The piezoelectric, dielectric, and ferroelectric properties of the （LiCe） co-substituted calcium bismuth niobate （CaBi2Nb209, CBNO） are investigated. The piezoelectric properties of CBNO ceramics are significantly enhanced and the dielectric loss tan 5 decreased. This makes poling using （LiCe） co-substitution easier. The ceramics （where represents A-site Ca2＋ vacancies, possess a pure layered structure phase and no other phases can be found. The Cao.ss（LiCe）0.04[]0.04Bi2Nb209 ceramics possess optimal piezoelectric properties, with piezoelectric coefficient （d33） and Curie temperature （Tc） found to be 13.3 pC/N and 960 ℃ respectively. The dielectric and piezoelectric properties of the （LiCe） co-substituted CBNO ceramics exhibit very stable temperature behaviours. This demonstrates that the CBNO ceramics are a promising candidate for ultrahigh temperature applications.展开更多
The piezoelectric,dielectric,and ferroelectric properties of the(LiCe) co-substituted calcium bismuth niobate(CaBi2Nb2O9,CBNO) are investigated.The piezoelectric properties of CBNO ceramics are significantly enhanced ...The piezoelectric,dielectric,and ferroelectric properties of the(LiCe) co-substituted calcium bismuth niobate(CaBi2Nb2O9,CBNO) are investigated.The piezoelectric properties of CBNO ceramics are significantly enhanced and the dielectric loss tan δ decreased.This makes poling using(LiCe) co-substitution easier.The ceramics(where represents A-site Ca2+ vacancies,possess a pure layered structure phase and no other phases can be found.The Ca0.88(LiCe)0.04 0.04Bi2Nb2O9 ceramics possess optimal piezoelectric properties,with piezoelectric coefficient(d 33) and Curie temperature(TC) found to be 13.3 pC/N and 960 C,respectively.The dielectric and piezoelectric properties of the(LiCe) co-substituted CBNO ceramics exhibit very stable temperature behaviours.This demonstrates that the CBNO ceramics are a promising candidate for ultrahigh temperature applications.展开更多
The In 2 O 3 : W (IWO) films with different W content were deposited on glass substrate using direct current sputtering method. The structure, surface morphology, and optical and electrical properties were investigate...The In 2 O 3 : W (IWO) films with different W content were deposited on glass substrate using direct current sputtering method. The structure, surface morphology, and optical and electrical properties were investigated. Results showed that both the carrier concentration and carrier mobility were increased with the doping of W. The IWO film with the lowest resistivity of 1.0×10 3 cm, highest carrier mobilityof 43.7 cm 2 V 1 s 1 and carrier concentration of 1.4×10 20 cm 3 was obtained at the content of 2.8 wt.%. The average optical transmittance from 300 nm to 900 nm reached 87.6%.展开更多
We investigated the influence of soaking time on the semi-conductivity and nonlinear electrical properties of TiO2- based varistor ceramic samples. We used a single sintering process and fabricated six disk samples of...We investigated the influence of soaking time on the semi-conductivity and nonlinear electrical properties of TiO2- based varistor ceramic samples. We used a single sintering process and fabricated six disk samples of （Sr, Bi, Si, Ta）-doped TiO2- based varistor ceramics sintered at 1 250℃ for 0.5 h, 1.0 h, 2.0 h, 3.0 h, 4.0 h, and 5.0 h, respectively. The samples were characterized by X-ray diffraction, breakdown voltage, and complex impedance. The results show that as the soaking time increases from 0.5 h to 5.0 h, the breakdown voltage drops before rising while the nonlinear coefficient increases and then decreases. We suggest that, considering both grain semi-conductivity and nonlinear electrical properties of the TiO2-based varistor ceramics, the optimal soaking time is between 2.0 h and 3.0 h.展开更多
The InGaAs/InAIAs/InP high electron mobility transistor （HEM：F） structures with lattice-matched and pseudo- morphic channels are grown by gas source molecular beam epitaxy. Effects of Si ^-doping condition and grow...The InGaAs/InAIAs/InP high electron mobility transistor （HEM：F） structures with lattice-matched and pseudo- morphic channels are grown by gas source molecular beam epitaxy. Effects of Si ^-doping condition and growth interruption on the electrical properties are investigated by changing the Si-cell temperature, doping time and growth process. It is found that the optimal Si ^-doping concentration （Nd） is about 5.0 x 1012 cm-2 and the use of growth interruption has a dramatic effect on the improvement of electrical properties. The material structure and crystal interface are analyzed by secondary ion mass spectroscopy and high resolution transmission elec- tron microscopy. An InGaAs/InAiAs/InP HEMT device with a gate length of lOOnm is fabricated. The device presents good pinch-off characteristics and the kink-effect of the device is trifling. In addition, the device exhibits fT = 249 GHa and fmax 〉 400 GHz.展开更多
The intercalation compounds of CuCl2 were synthesized with expanded graphite, whose magnitude of the electrical conductivity is about 10(3)S(.)cm(-1). Their electrical conductivity is 3 similar to6 times as high as th...The intercalation compounds of CuCl2 were synthesized with expanded graphite, whose magnitude of the electrical conductivity is about 10(3)S(.)cm(-1). Their electrical conductivity is 3 similar to6 times as high as that of the expanded graphite, and about 10 times as high as that of GIC made of the non-expanded graphite. The microanalysis results of chemical compounds by X-ray energy spectrum scanning of TEM testified that the atomic ratio of chloride and cupric is nonstoichoimetric. The multivalence and exchange of electrovalence of the cupric ion was confirmed by the XPS-ESCA. Vacancy of chlorine anion increases the concentration of charge carrier. The special stage structure, made of graphite and chloride, produces a weak chemical bond belt and provides a carrier space in the direction of GIC layer. These factors develop the electrical properties.展开更多
基金supported in part by the National Natural Science Foundation of China under Grant 52277139 and 52367014in part by the Guangxi Science Fund for Distinguished Young Scholars under Grant 2024GXNSFFA999017.
文摘Fluorination is a critical surface modification technique for enhancing the electrical performance of composite insulators.This study employs molecular simulations to examine the microstructure and space charge behavior of fluorinated and non-fluorinated silicone rubber under an electric field,with experimental validation.The results show that fluorinated silicone rubber exhibits lower total energy,higher polarization,and stronger dipole moments compared to its non-fluorinated counterpart,shifting the material from an insulating to a conductive state.Under lower electric field strengths,the carbon-silicon bonds in fluorinated silicone rubber are longer,but it maintains geometric stability under higher fields.The energy gap changes across different fluorination modes and varies with electric field strength,indicating that fluorination affects conductivity differently at various field intensities.Both fluorination methods improve conductivity in the 0–3.8 V/nm range,with substitutional fluorination showing superior performance between 3.8 and 8.9 V/nm.Above 9.1 V/nm,fluorination maximizes conductivity.The fluorinated samples exhibit a greater redshift at higher electric fields,resulting in enhanced conductivity and improved surface charge distribution.These findings offer insights into the microscopic effects of fluorination on silicone rubber’s electrical properties,while experiments confirm that fluorination increases hydrophobicity and boosts DC flashover voltage,further enhancing the material’s performance.
文摘Two-dimensional(2D)transition metal carbides and/or nitrides(MXenes)have exhibited many outstanding merits,including good conductivity,tunable bandgap,high electric capacity and optical transparency[1,2].In the past several years,MXenes have shown promising advantages in the fields of energy storage,electrocatalysis,electromagnetic shielding,and(opto-)electronic devices.These excellent properties can be tuned by controlling the chemical composition,shape and size of the nanosheets,defects,boundaries,and surface functional groups,etc.
基金Project(22020JJ4729)supported by the Natural Science Foundation of Hunan Province,China。
文摘Polyvinylidene fluoride/lead zirconate titanate(PVDF/PZT)composite films have been prepared by direct ink writing and the effect of PZT content on crystallization behavior and electrical properties of film were systematically investigated.The composite films were characterized by scanning electron microscope(SEM),X-ray diffractometer(XRD),Flourier transform infrared spectroscope(FTIR)and differential scanning calorimeter(DSC).The results show that,surface modified PZT powder(PZT@PDA)is successfully coated by polydopamine(PDA),resulting in a large number of polar groups that interact with the-CF_(2)-groups in PVDF,inducing the generation of polarβphase due to hydrogen bonding formed in the interaction.Theβphase content in composite film increases with increasing PZT@PDA content,up to 28.09%as with 5 wt.%PZT@PDA.PZT@PDA plays a role of nucleating agent to promote the generation of polar phases in the film and also acts as an impurity hindering the growth of nuclei to reduce crystallinity.Moreover,the presence of PZT@PDA in interfaces provides more sites for the occurrence of interfacial polarization and thus improving the electrical properties of films.The composite film with 5 wt.%PZT@PDA possesses the highest dielectric constant(8.61)and residual polarization value(0.6803μC/cm^(2)).
文摘The microstructure and electrical properties of ZnO-based varistors with the SiO2 content in the range of 0-1.00mol% were prepared by a solid reaction route. The varistors were characterized by scanning electron microscopy, X-ray diffraction, energy-dispersive X-ray spectrometry, inductively coupled plasma-atomic emission spectrometry, and X-ray photoelectron spectroscopy. The results indicate that the average grain size of ZnO decreases with the SiO2 content increasing. A new second phase （Zn2SiO4） and a glass phase （Bi2SiO5） are found. Element Si mainly exists in the grain boundary and plays an important role in controlling the Bi2O3 vaporization. The electric measurement shows that the incorporation of SiO2 can significantly improve the nonlinear properties of ZnO-based varistors, and the nonlinear coefficients of the varistors with SiO2 are in the range of 36.8-69.5. The varistor voltage reaches the maximum value of 463 V/mm and the leakage current reaches the minimum value of 0.11 μA at the SiO2 content of 0.75mol%.
基金the Program for New Century Excellent Talents in Universities, MOE, China (No. NCET-05-0764)the Tackle Key Problems on Scientific Technology Foundation of Chongqing Municipality (Nos. CSTC2005AA4006-A6 and CSTC2004AC4034)+2 种基金the Natural Science Foundation of Chongqing Municipality (No. CSTC2005BA4016)China Postdoctoral Science Foundation (No. 2005037544)the Inno-base for Graduates of Chongqing University (No. 200506Y1B0240131).
文摘Highly conductive and transparent Al-doped ZnO （AZO） thin films were prepared from a zinc target containing Al （1.5 wt.%） by direct current （DC） and radio frequency （RF） reactive magnetron sputtering. The structural, optical, and electrical properties of AZO films as-deposited and submitted to annealing treatment （at 300 and 400℃, respectively） were characterized using various techniques. The experimental results show that the properties of AZO thin films can be further improved by annealing treatment. The crystallinity of ZnO films improves after annealing treatment. The transmittances of the AZO thin films prepared by DC and RF reactive magnetron sputtering are up to 80% and 85% in the visible region, respectively. The electrical resistivity of AZO thin films prepared by DC reactive magnetron sputtering can be as low as 8.06 x 10-4 Ωcm after annealing treatment. It was also found that AZO thin films prepared by RF reactive magnetron sputtering have better structural and optical properties than that prepared by DC reactive magnetron sputtering.
文摘Following are the comments for the queries raised by Prof. Pawel E. Tomaszewski on our published paper entitled ＂Structural, Optical, and Electrical Properties of Zn-Doped CdO Thin Films Fabricated by a Simplified Spray Pyrolysis Technique＂ by K. Usharani and A.R. Balu published in Acta Metall. Sin.
文摘Y2O3-doped ZnO-based varistor ceramics were prepared using high-energy ball milling （HEBM） and low-temperature sin- tering technique, with voltage-gradient of 1934-2197 V/mm, non-linear coefficients of 20.8-21.8, leakage currents of 0.59-1.04 μA, and densities of 5.46-5.57 g/cm3. With increasing Y2O3 content, the voltage-gradient increases because of the decrease of ZnO grain size; the non-linear coefficient and the leakage current improve but the density decreases because of more porosity; the donor con- centration and density of interface states decrease, whereas the barrier height and width increase because of the acceptor effect of Y2O3 in varistor ceramics.
基金Project(50902061)supported by the National Natural Science Foundation of ChinaProject(2011-22)supported by the State Key Laboratory of Inorganic Synthesis and Preparative Chemistry of Jilin University,China+3 种基金Project(20100471380)supported by the China Postdoctoral Science FoundationProject(J50102)supported by the Leading Academic Discipline Program of Shanghai Municipal Education Commission,ChinaProject(10KJD430002)supported by the Universities Natural Science Research Program of Jiangsu Province,ChinaProject(2010002)supported by the Jiangsu University Undergraduate Practice-Innovation Training Program,China
文摘Lu2O3-doped ZnO-Bi2O3-based varistor ceramics samples were prepared by a conventional mixed oxide route and sintered at temperatures in the range of 900-1 000°C,and the microstructures of the varistor ceramics samples were characterized by X-ray diffractometry(XRD)and scanning electron microscopy(SEM);at the same time,the electrical properties and V-I characteristics of the varistor ceramics samples were investigated by a DC parameter instrument for varistors.The results show that the ZnO-Bi2O3-based varistor ceramics with 0.3%Lu2O3(molar fraction)sintered at 950°C exhibit comparatively ideal comprehensive electrical properties.The XRD analysis of the samples shows the presence of ZnO,Bi-rich,spinel Zn7Sb2O12 and Lu2O3-based phases.
基金Project(BK2011243) supported by the Natural Science Foundation of Jiangsu Province,ChinaProject(2007DA10512711408) supported by the Visiting Scholarship of State Key Laboratory of Power Transmission Equipment & System Security and New Technology (Chongqing University),China+4 种基金Project(EIPE11204) supported by the State Key Laboratory of Electrical Insulation and Power Equipment,ChinaProject(KF201104) supported by the State Key Laboratory of New Ceramic and Fine Processing,ChinaProject(KFJJ201105) supported by the Opening Project of State Key Laboratory of Electronic Thin Films and Integrated Devices,ChinaProject(10KJD430002) supported by the Universities Natural Science Research Project of Jiangsu Province,ChinaProject(11JDG084) supported by the Research Foundation of Jiangsu University,China
文摘ZnO-Bi2O3-based varistor ceramics doped with Yb2O3 in the range from 0 to 0.4% （molar fraction） were obtained by a solid reaction route. The X-ray diffractometry （XRD） and scanning electron microscopy （SEM） were applied to characterize the phases and microstructure of the varistor ceramics, and a DC parameter instrument for varistor ceramics was applied to investigate their electrical properties and V-I characteristics. The XRD analysis of the samples shows that the ZnO phase, Bi2O3 phase, ZnTSbaOl2-type spinel phase and Zn2Bi3Sb3O14-type pyrochlore are present, and the Yb2O3 phases and Sb2O4 phases are found in varistor ceramics with increasing amounts of Yb2O3. The average size of ZnO grain firstly increases and then decreases with the increase of Yb2O3 content. The result also shows that the threshold voltage is between 656 V/nun and 1 232 V/mm, the nonlinear coefficient is in the range of 14.1-22.3, and the leakage current is between 0.60 μA and 19.6 μA. The 0.20% Yb2O3-added ZnO-Bi2O3-based varistor ceramics sintered at 900 ℃ have the best electrical characteristics.
基金This work is financially supported by the National Natural Science Foundation of China (No. 50471045)Shanghai Nano-technology Promotion Center (No. 0452nm026).
文摘The microstructure, electrical properties, and density of Dy2O3-doped ZnO-based varistor ceramics, prepared using high-energy ball milling （HEBM） and sintered at 800℃, were investigated by increasing the cooling rate in the order of H （slow cooling in furnace） → L （cooling in furnace） → K （cooling in air）. With the increase in cooling rate, the grain size and density decreased, the breakdown voltage （VImA/mm） increased, and the nonlinear coefficient （α） and leakage current （IL） exhibited extremum. The sample with the cooling type L showed the best properties with the breakdown voltage of 2650 V/ram, o：of 20.3, IL of 5.2 laA, and density of 5.42 g/cm^3. The barrier height （ФB）, donor concentration （Nd）, density of the interface states （Nd）, and barrier width （ω） all exhibited extremum during the alteration in cooling rate. The different relative amount of Bi-rich phase and its distribution as well as the characteristic parameters of grain boundary, resulting from the alteration of cooling rate, led to the changes in the properties of varistor ceramics.
文摘The effect of sintering temperature on microstructure, electrical properties, and pulse aging behavior of （V2O5-Mn3O4-Er2O3）-doped zinc oxide varistor ceramics was systematically studied. When the sintering temperature increased, the average grain size increased from 6.1 to 8.7μm and the sintered density decreased from 5.52 to 5.43 g/cm3. The breakdown field decreased from 3856 to 922 V/cm with an increase in the sintering temperature up to 900 °C, whereas a further increase to 2352 V/cm at 925 °C. The nonlinear coefficient increased pronouncedly from 4.6 to 30.0 with an increase in the sintering temperature. The varistor ceramics sintered at 850 °C exhibited the best clamping characteristics, with the clamp voltage ratio of the range of 2.22-2.88 for pulse current of 1-25 A. The varistor ceramics sintered at 925 °C exhibited the strongest stability, with %ΔE1 mA/cm2=-8.8% after applying the multi-pulse current of 25 A.
基金Project supported by the Natural Science Foundation of Anhui Province of China(1708085ME112)。
文摘In this study,Gd and Ca co-doped ceria electrolytes with the compositions of Ce_(0.8)Gd_(0.2-x)Ca_(x)O_(2-δ)(x=0-0.08) were prepared by a novel gel-casting method.The effects of the addition of Ca on the phase compositions,sintering behavio r,and electrical prope rties of samples were investigated.According to the scanning electron microscope results and relative density measurement results,it is found that the addition of particular quantity of CaO can promote the sintering densification with a uniform grain growth.When the sintering temperature is 1400℃,the sample with 6 mol% addition of Ca has the highest relative density,which reaches 98.5% of the theoretical density.The electrical properties testing results confirm that the electrical conductivity of the samples can be improved significantly by doping appropriate CaO content.The maximum conductivity of 0.082 S/cm can be obtained at 800℃ in the Ce_(0.8)Gd_(0.12)-Ca_(0.06)O_(1.87) sample.It suggests that CaO can be used as an effective sintering aid and a codopant on the optimization of electrical properties for ceria-based electrolytes.
基金supported by the Natural Science Foundation of Education Department of Henan Province (No.2009A430008)
文摘An innovational method that poly(styrene-co-maleic anhydride)(SMA),a compatibilizer of immiscible nylon6/polystyrene(PA6/PS) blends,was first reacted with carbon black(CB) and then blended with PA6/PS,has been employed to prepare the PA6/PS/(SMA-CB) composites of which CB localized at the interface.In PA6/PS/CB blends,CB was found to preferentially localize in the PA6 phase.However,in the PA6/PS/(SMA-CB) blends,it was found that CB particles can be induced by SMA to localize at the interface.The electrical porperties of PA6/PS/(SMA-CB) composites were investigated.The results showed that the composites exhibited distinct triple percolation behavior,i.e.the percolation is governed by the percolation of CB in SMA phase,the continuity of SMA-CB at the interface and the continuity of PA6/PS interface.The percolation threshold of PA6/PS/(SMA-CB) was only 0.15 wt%,which is much lower than that of PA6/PS/CB.Moreover,the PTC(positive temperature coefficient) intensity of PA6/PS/(SMA-CB) composites was stronger than that of PA6/PS/CB and the negative temperature coefficient(NTC) effect was eliminated.The electrical properties of PA6/PS/(SMA-CB) were explained in terms of its special interface morphology:SMA and CB localize at interphase to form the conductive pathways.
文摘TiO2/Au/TiO2 multilayer thin films were deposited at polymer substrate at room temperature using dc （direct current） magnetron sputtering method. By varying the thickness of each layer, the optical and electrical properties of the TiOz/Au/TiO2 multilayer films can be tailored to suit different applications. The thickness and optical properties of the Au layer and the quality of the Au-dielectric interfaces are critical for the electrical and optical performance of the Au-dielectric multilayer thin films. At the thickness of 8 rim, the Au layer forms a continuous structure having the lowest resistivity and it must be thin for high transmittance. The multilayer stack can be optimized to have a sheet resistance of 6 D./sq. at a transmittance over 80% at 680 nm in wavelength. The peak transmittance shifts towards the long wavelength region when the thickness of the two TiO2 （upper and lower） layers increases. When the film thickness of the two TiO2 film is 45 nm, a high transmittance value is obtained for the entire visible light wavelength region.
基金Project supported by the National Natural Science Foundation of China （Grant Nos. 50632030 and 10804130） and the Shaanxi Provincial Natural Science Foundation, China （Grant No. 2011JM6012）.
文摘The piezoelectric, dielectric, and ferroelectric properties of the （LiCe） co-substituted calcium bismuth niobate （CaBi2Nb209, CBNO） are investigated. The piezoelectric properties of CBNO ceramics are significantly enhanced and the dielectric loss tan 5 decreased. This makes poling using （LiCe） co-substitution easier. The ceramics （where represents A-site Ca2＋ vacancies, possess a pure layered structure phase and no other phases can be found. The Cao.ss（LiCe）0.04[]0.04Bi2Nb209 ceramics possess optimal piezoelectric properties, with piezoelectric coefficient （d33） and Curie temperature （Tc） found to be 13.3 pC/N and 960 ℃ respectively. The dielectric and piezoelectric properties of the （LiCe） co-substituted CBNO ceramics exhibit very stable temperature behaviours. This demonstrates that the CBNO ceramics are a promising candidate for ultrahigh temperature applications.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 50632030 and 10804130)the Shaanxi Provincial Natural Science Foundation,China (Grant No. 2011JM6012)
文摘The piezoelectric,dielectric,and ferroelectric properties of the(LiCe) co-substituted calcium bismuth niobate(CaBi2Nb2O9,CBNO) are investigated.The piezoelectric properties of CBNO ceramics are significantly enhanced and the dielectric loss tan δ decreased.This makes poling using(LiCe) co-substitution easier.The ceramics(where represents A-site Ca2+ vacancies,possess a pure layered structure phase and no other phases can be found.The Ca0.88(LiCe)0.04 0.04Bi2Nb2O9 ceramics possess optimal piezoelectric properties,with piezoelectric coefficient(d 33) and Curie temperature(TC) found to be 13.3 pC/N and 960 C,respectively.The dielectric and piezoelectric properties of the(LiCe) co-substituted CBNO ceramics exhibit very stable temperature behaviours.This demonstrates that the CBNO ceramics are a promising candidate for ultrahigh temperature applications.
基金financially supported by the National Natural Science Foundation of China (No. 50902006)the National High Technology Development 863 Program of China (No. 2009AA03Z428)National Student Innovative Experiment Plan
文摘The In 2 O 3 : W (IWO) films with different W content were deposited on glass substrate using direct current sputtering method. The structure, surface morphology, and optical and electrical properties were investigated. Results showed that both the carrier concentration and carrier mobility were increased with the doping of W. The IWO film with the lowest resistivity of 1.0×10 3 cm, highest carrier mobilityof 43.7 cm 2 V 1 s 1 and carrier concentration of 1.4×10 20 cm 3 was obtained at the content of 2.8 wt.%. The average optical transmittance from 300 nm to 900 nm reached 87.6%.
基金Funded by the Natural Science Foundation of China (No. 50872001 and No. 50642038)the Scientific Research Foundation of Education Ministry of Anhui Province (No. 2005KJ224 and No. KJ2007B132)the Graduate Student Innovation Programs of Anhui University (No. 20072006)
文摘We investigated the influence of soaking time on the semi-conductivity and nonlinear electrical properties of TiO2- based varistor ceramic samples. We used a single sintering process and fabricated six disk samples of （Sr, Bi, Si, Ta）-doped TiO2- based varistor ceramics sintered at 1 250℃ for 0.5 h, 1.0 h, 2.0 h, 3.0 h, 4.0 h, and 5.0 h, respectively. The samples were characterized by X-ray diffraction, breakdown voltage, and complex impedance. The results show that as the soaking time increases from 0.5 h to 5.0 h, the breakdown voltage drops before rising while the nonlinear coefficient increases and then decreases. We suggest that, considering both grain semi-conductivity and nonlinear electrical properties of the TiO2-based varistor ceramics, the optimal soaking time is between 2.0 h and 3.0 h.
基金Supported by the National Natural Science Foundation of China under Grant No 61434006
文摘The InGaAs/InAIAs/InP high electron mobility transistor （HEM：F） structures with lattice-matched and pseudo- morphic channels are grown by gas source molecular beam epitaxy. Effects of Si ^-doping condition and growth interruption on the electrical properties are investigated by changing the Si-cell temperature, doping time and growth process. It is found that the optimal Si ^-doping concentration （Nd） is about 5.0 x 1012 cm-2 and the use of growth interruption has a dramatic effect on the improvement of electrical properties. The material structure and crystal interface are analyzed by secondary ion mass spectroscopy and high resolution transmission elec- tron microscopy. An InGaAs/InAiAs/InP HEMT device with a gate length of lOOnm is fabricated. The device presents good pinch-off characteristics and the kink-effect of the device is trifling. In addition, the device exhibits fT = 249 GHa and fmax 〉 400 GHz.
基金This paper was the part of doctor thesis of China Uni-versity of Geoscience, (Beijing). The project was sup-' ported by Natio
文摘The intercalation compounds of CuCl2 were synthesized with expanded graphite, whose magnitude of the electrical conductivity is about 10(3)S(.)cm(-1). Their electrical conductivity is 3 similar to6 times as high as that of the expanded graphite, and about 10 times as high as that of GIC made of the non-expanded graphite. The microanalysis results of chemical compounds by X-ray energy spectrum scanning of TEM testified that the atomic ratio of chloride and cupric is nonstoichoimetric. The multivalence and exchange of electrovalence of the cupric ion was confirmed by the XPS-ESCA. Vacancy of chlorine anion increases the concentration of charge carrier. The special stage structure, made of graphite and chloride, produces a weak chemical bond belt and provides a carrier space in the direction of GIC layer. These factors develop the electrical properties.
