This paper presents the design, fabrication, and preliminary experimental result of an electric field microsensor based on the structure of piezoelectric interdigitated cantilevers with staggered vertical vibration mo...This paper presents the design, fabrication, and preliminary experimental result of an electric field microsensor based on the structure of piezoelectric interdigitated cantilevers with staggered vertical vibration mode. The working principle of this electric field microsensor is demonstrated, and the induced charges and structural parameters of this microsensor are simulated by the finite element method. The electric field microsensor was fabricated by Micro-Electro Mechanical Systems(MEMS) technique. Each cantilever is a multilayer compound structure(Al/Si3N4/ Pt/PZT/Pt/ Ti/SiO 2/Si), and Piezoelectric, PieZ oelectric ceramic Transducer(PZT)(PbZ rxTi(1–x)O3) layer, prepared by sol-gel method, is used as the piezoelectric material to drive the cantilevers vibrating. This electric field microsensor was tested under the DC electric field with the field intensity from 0 to 5×104 V/m. The output voltage signal of the electric field microsensor has a good linear relationship to the intensity of applied electric field. The performance could be improved with the optimized design of structure, and reformative fabrication processes of PZT material.展开更多
This paper presents a single-chip 3D electric field microsensor, in which a sensing element is set at the center to detect the Z-axis component of an electrostatic field. Two pairs of sensing elements with the same st...This paper presents a single-chip 3D electric field microsensor, in which a sensing element is set at the center to detect the Z-axis component of an electrostatic field. Two pairs of sensing elements with the same structure are arranged in a cross-like configuration to measure the X- and Y-axis electrostatic field components. An in-plane rotary mechanism is used in the microsensor to detect the X-, Y-, and Z-axis electrostatic field components simultaneously. The proposed microsensor is compact and presents high integration. The microsensor is fabricated through a MetalMUMPS process. Experimental results show that in the range of 0-50 kV/m, the linearity errors of the microsensor are within 5.5%, and the total measure- ment errors of the three electrostatic field components are less than 14.04%.展开更多
文摘This paper presents the design, fabrication, and preliminary experimental result of an electric field microsensor based on the structure of piezoelectric interdigitated cantilevers with staggered vertical vibration mode. The working principle of this electric field microsensor is demonstrated, and the induced charges and structural parameters of this microsensor are simulated by the finite element method. The electric field microsensor was fabricated by Micro-Electro Mechanical Systems(MEMS) technique. Each cantilever is a multilayer compound structure(Al/Si3N4/ Pt/PZT/Pt/ Ti/SiO 2/Si), and Piezoelectric, PieZ oelectric ceramic Transducer(PZT)(PbZ rxTi(1–x)O3) layer, prepared by sol-gel method, is used as the piezoelectric material to drive the cantilevers vibrating. This electric field microsensor was tested under the DC electric field with the field intensity from 0 to 5×104 V/m. The output voltage signal of the electric field microsensor has a good linear relationship to the intensity of applied electric field. The performance could be improved with the optimized design of structure, and reformative fabrication processes of PZT material.
文摘This paper presents a single-chip 3D electric field microsensor, in which a sensing element is set at the center to detect the Z-axis component of an electrostatic field. Two pairs of sensing elements with the same structure are arranged in a cross-like configuration to measure the X- and Y-axis electrostatic field components. An in-plane rotary mechanism is used in the microsensor to detect the X-, Y-, and Z-axis electrostatic field components simultaneously. The proposed microsensor is compact and presents high integration. The microsensor is fabricated through a MetalMUMPS process. Experimental results show that in the range of 0-50 kV/m, the linearity errors of the microsensor are within 5.5%, and the total measure- ment errors of the three electrostatic field components are less than 14.04%.
