A dual-band characteristic of stacked rectangular microstrip antenna is experimentally studied. It is a probe fed antenna for impedance matching with 50Ω coaxial cable. This antenna works well in the frequency range ...A dual-band characteristic of stacked rectangular microstrip antenna is experimentally studied. It is a probe fed antenna for impedance matching with 50Ω coaxial cable. This antenna works well in the frequency range (2.86 to 4.63 GHz). It is basically a low cost, light weight medium gain antenna, which is used for mobile communication. The variations of the length and width (1mm) of the stacked rectangular patch antenna have been done. And it is found dual resonance with increasing lower resonance frequency and almost constant upper resonance frequency with increases of the length & width of rectangular microstrip antenna. The input impedance and VSWR, return loss have been measured with the help of Network analyzer.展开更多
The key technologies for the dual high-k and dual metal gate, such as the electrical optimization of metal insert poly-Si stack structure, the separating of high-k and metal gate of n/pMOS in different regions of the ...The key technologies for the dual high-k and dual metal gate, such as the electrical optimization of metal insert poly-Si stack structure, the separating of high-k and metal gate of n/pMOS in different regions of the wafer, and the synchronous etching of n/pMOS gate stack, are successfully developed. First, reasonable flat-band voltage and equivalent oxide thickness of pMOS MIPS structure are obtained by further optimizing the HfSiAlON dielectric through incorporating more Al-O dipole at interface between HfSiAlON and bottom SiOx. Then, the separating of high-k and metal gate for n/pMOS is achieved by SC1（NH4OH：H2O2：H2O = 1 ： 1 ： 5） and DHF-based solution for the selective removing of n MOS TaN and Hf Si ON and by BCl3-based plasma and DHF-based solution for the selective removing of pMOS TaN/Mo and HfSiAlON.After that, the synchronous etching of n/pMOS gate stack is developed by utilizing optimized BCl3/SF6/O2/Ar plasma to obtain a vertical profile for TaN and TaN/Mo and by utilizing BCl3/Ar plasma combined with DHF-based solution to achieve high selectivity to Si substrate. Finally, good electrical characteristics of CMOS devices, obtained by utilizing these new developed technologies, further confirm that they are practicable technologies for DHDMG integration.展开更多
随着网络技术的持续演进,为满足日益增长的通信需求,急需对油气自控网络进行升级。基于虚拟交换实例(Virtual Switching Instance,VSI)/虚拟扩展局域网(Virtual eXtensible Local Area Network,VXLAN)隧道通信技术,开展网际互连协议第4...随着网络技术的持续演进,为满足日益增长的通信需求,急需对油气自控网络进行升级。基于虚拟交换实例(Virtual Switching Instance,VSI)/虚拟扩展局域网(Virtual eXtensible Local Area Network,VXLAN)隧道通信技术,开展网际互连协议第4版/网际互连协议第6版(Internet Protocol Version 4/Internet Protocol Version 6,IPv6)双栈部署与效能评估相关研究。通过确立双栈架构的设计原则与目标,构建分层网络架构,实现VSI/VXLAN隧道与IPv4/IPv6双栈架构的深度融合,完成核心网络设备与接入层网络的双栈部署,并实施安全域划分。基于多维度效能评估指标体系,采集多测点、多负载条件下的性能数据,量化评估网络的安全防护能力。实验结果表明,该方案可显著提升油气自控网络在协议兼容性、传输效率与安全性方面的综合性能,为其数字化升级提供理论支撑与实践路径。展开更多
文摘A dual-band characteristic of stacked rectangular microstrip antenna is experimentally studied. It is a probe fed antenna for impedance matching with 50Ω coaxial cable. This antenna works well in the frequency range (2.86 to 4.63 GHz). It is basically a low cost, light weight medium gain antenna, which is used for mobile communication. The variations of the length and width (1mm) of the stacked rectangular patch antenna have been done. And it is found dual resonance with increasing lower resonance frequency and almost constant upper resonance frequency with increases of the length & width of rectangular microstrip antenna. The input impedance and VSWR, return loss have been measured with the help of Network analyzer.
基金Project supported by the National High Technology Research and Development Program of China(Grant No.2015AA010601)
文摘The key technologies for the dual high-k and dual metal gate, such as the electrical optimization of metal insert poly-Si stack structure, the separating of high-k and metal gate of n/pMOS in different regions of the wafer, and the synchronous etching of n/pMOS gate stack, are successfully developed. First, reasonable flat-band voltage and equivalent oxide thickness of pMOS MIPS structure are obtained by further optimizing the HfSiAlON dielectric through incorporating more Al-O dipole at interface between HfSiAlON and bottom SiOx. Then, the separating of high-k and metal gate for n/pMOS is achieved by SC1（NH4OH：H2O2：H2O = 1 ： 1 ： 5） and DHF-based solution for the selective removing of n MOS TaN and Hf Si ON and by BCl3-based plasma and DHF-based solution for the selective removing of pMOS TaN/Mo and HfSiAlON.After that, the synchronous etching of n/pMOS gate stack is developed by utilizing optimized BCl3/SF6/O2/Ar plasma to obtain a vertical profile for TaN and TaN/Mo and by utilizing BCl3/Ar plasma combined with DHF-based solution to achieve high selectivity to Si substrate. Finally, good electrical characteristics of CMOS devices, obtained by utilizing these new developed technologies, further confirm that they are practicable technologies for DHDMG integration.
文摘随着网络技术的持续演进,为满足日益增长的通信需求,急需对油气自控网络进行升级。基于虚拟交换实例(Virtual Switching Instance,VSI)/虚拟扩展局域网(Virtual eXtensible Local Area Network,VXLAN)隧道通信技术,开展网际互连协议第4版/网际互连协议第6版(Internet Protocol Version 4/Internet Protocol Version 6,IPv6)双栈部署与效能评估相关研究。通过确立双栈架构的设计原则与目标,构建分层网络架构,实现VSI/VXLAN隧道与IPv4/IPv6双栈架构的深度融合,完成核心网络设备与接入层网络的双栈部署,并实施安全域划分。基于多维度效能评估指标体系,采集多测点、多负载条件下的性能数据,量化评估网络的安全防护能力。实验结果表明,该方案可显著提升油气自控网络在协议兼容性、传输效率与安全性方面的综合性能,为其数字化升级提供理论支撑与实践路径。
